페이지 16 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 182 B6663	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,736	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	12dB ~ 18dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
MRF559GT	Microsemi Corporation	COMM/BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,152	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	-	-	-
NE461M02-T1-QR-AZ	CEL	SAME AS 2SC5337 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	패키지: TO-243AA	재고7,920	15V	-	1.5dB ~ 2dB @ 500MHz ~ 1GHz	8.3dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	-
MS2341	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고4,272	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
NE85633-T1B-R23-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,768	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MSC3930-BT1G	ON Semiconductor	TRANS NPN RF BIPO 20V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고3,488	20V	150MHz	-	-	200mW	70 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
MSC2295-BT1G	ON Semiconductor	TRANS NPN RF BIPO 20V SC-59 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	20V	150MHz	-	-	200mW	70 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
NE68830-A	CEL	TRANS NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고4,480	6V	4.5GHz	1.7dB ~ 2.5dB @ 2GHz	-	150mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
KSC3123OMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz Gain: 20dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고144,000	20V	1.4GHz	3.8dB ~ 5.5dB @ 200MHz	20dB ~ 23dB	150mW	90 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
ZUMTS17HTC	Diodes Incorporated	TRANSISTOR RF NPN SC70-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고3,200	15V	1.3GHz	4.5dB @ 500MHz	-	330mW	70 @ 2mA, 1V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
AT-41533-TR1G	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고1,369,476	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2731-100M	Microsemi Corporation	TRANS RF BIPO 575W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8db ~ 9.4dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	패키지: 55KS-1	재고3,248	65V	2.7GHz ~ 3.1GHz	-	8db ~ 9.4dB	575W	15 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
MS1008	Microsemi Corporation	TRANS RF BIPO 233W 10A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M164 Supplier Device Package: M164	패키지: M164	재고4,528	55V	30MHz	-	14dB	233W	15 @ 1.4A, 6V	10A	200°C (TJ)	Chassis Mount	M164	M164
MS1227	Microsemi Corporation	TRANS RF BIPO 80W 4.5A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 15dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고3,584	18V	30MHz	-	15dB	80W	200 @ 1A, 5V	4.5A	200°C (TJ)	Chassis Mount	M113	M113
NE68133-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,312	10V	9GHz	1.2dB @ 1GHz	13dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFU520YF	NXP	TRANS RF NPN 12V 30MA 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 14dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-TSSOP	패키지: 5-TSSOP, SC-70-5, SOT-353	재고5,632	12V	10GHz	1dB @ 1.8GHz	14dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	5-TSSOP
MAPR-000912-500S00	M/A-Com Technology Solutions	TRANS NPN 500W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.44dB ~ 9.77dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 52.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,096	80V	-	-	9.44dB ~ 9.77dB	500W	-	52.5A	200°C (TJ)	Chassis Mount	-	-
BFR193FH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 80MA TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고29,568	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	12.5dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
BFR 106 E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz Gain: 8.5dB ~ 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 210mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고24,480	15V	5GHz	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz	8.5dB ~ 13dB	700mW	70 @ 70mA, 8V	210mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFU590QX	NXP	TRANS RF NPN 12V 200MA SOT89-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고26,622	12V	8GHz	-	6.5dB	2W	60 @ 80mA, 8V	200mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BFT92,215	NXP	TRANS PNP 25MA 15V 5GHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고259,386	15V	5GHz	2.5dB @ 500MHz	-	300mW	20 @ 14mA, 10V	25mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MRF448	M/A-Com Technology Solutions	TRANS RF NPN 50V 16A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 250W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 10V Current - Collector (Ic) (Max): 16A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: 211-11, Style 2	재고6,256	50V	-	-	14dB	250W	10 @ 5A, 10V	16A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
NTE2687	NTE Electronics, Inc	RF TRANS NPN 450V 20MHZ TO220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 450V Frequency - Transition: 20MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 45W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	450V	20MHz	-	-	45W	10 @ 4A, 5V	8A	150°C (TJ)	Through Hole	TO-220-3	TO-220
2SC4995YD-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 900MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: -	Request a Quote	8V	11GHz	1.1dB @ 900MHz	-	100mW	50 @ 20mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
2SC5013-A	CEL	RF TRANS NPN 10V 10GHZ SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	패키지: -	Request a Quote	10V	10GHz	1.8dB @ 2GHz	9.5dB	150mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	-
MS2506	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5108-Y-LF	Toshiba Semiconductor and Storage	RF TRANS NPN 10V 6GHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	Request a Quote	10V	6GHz	-	11dB	100mW	120 @ 5mA, 5V	30mA	-	Surface Mount	SC-75, SOT-416	SSM
BFR92ALT1	Microsemi Corporation	RF TRANS 15V 4.5GHZ SOT23 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 3dB @ 500MHz Gain: - Power - Max: 273mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	15V	4.5GHz	3dB @ 500MHz	-	273mW	40 @ 14mA, 10V	25mA	150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

BFR 182 B6663

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 12dB ~ 18dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,736

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

12dB ~ 18dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

MRF559GT

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,152

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

NE461M02-T1-QR-AZ

CEL

SAME AS 2SC5337 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: -

패키지: TO-243AA

재고7,920

15V

-

1.5dB ~ 2dB @ 500MHz ~ 1GHz

8.3dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

-

MS2341

Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고4,272

65V

1.025GHz ~ 1.15GHz

-

9dB

87.5W

-

2.6A

200°C (TJ)

Chassis Mount

M115

NE85633-T1B-R23-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고2,768

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MSC3930-BT1G

ON Semiconductor

TRANS NPN RF BIPO 20V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고3,488

20V

150MHz

-

200mW

70 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

MSC2295-BT1G

ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

20V

150MHz

-

200mW

70 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

NE68830-A

CEL

TRANS NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고4,480

6V

4.5GHz

1.7dB ~ 2.5dB @ 2GHz

-

150mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

KSC3123OMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고144,000

20V

1.4GHz

3.8dB ~ 5.5dB @ 200MHz

20dB ~ 23dB

150mW

90 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

ZUMTS17HTC

Diodes Incorporated

TRANSISTOR RF NPN SC70-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고3,200

15V

1.3GHz

4.5dB @ 500MHz

-

330mW

70 @ 2mA, 1V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

AT-41533-TR1G

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고1,369,476

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2731-100M

Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8db ~ 9.4dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

패키지: 55KS-1

재고3,248

65V

2.7GHz ~ 3.1GHz

-

8db ~ 9.4dB

575W

15 @ 600mA, 5V

15A

200°C (TJ)

Chassis Mount

55KS-1

MS1008

Microsemi Corporation

TRANS RF BIPO 233W 10A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M164
Supplier Device Package: M164

패키지: M164

재고4,528

55V

30MHz

-

14dB

233W

15 @ 1.4A, 6V

10A

200°C (TJ)

Chassis Mount

M164

MS1227

Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 15dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고3,584

18V

30MHz

-

15dB

80W

200 @ 1A, 5V

4.5A

200°C (TJ)

Chassis Mount

M113

NE68133-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,312

10V

9GHz

1.2dB @ 1GHz

13dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFU520YF

NXP

TRANS RF NPN 12V 30MA 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 14dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP

패키지: 5-TSSOP, SC-70-5, SOT-353

재고5,632

12V

10GHz

1dB @ 1.8GHz

14dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

5-TSSOP

MAPR-000912-500S00

M/A-Com Technology Solutions

TRANS NPN 500W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.44dB ~ 9.77dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 52.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,096

80V

-

9.44dB ~ 9.77dB

500W

-

52.5A

200°C (TJ)

Chassis Mount

-

BFR193FH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 80MA TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고29,568

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

12.5dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

BFR 106 E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain: 8.5dB ~ 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 210mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고24,480

15V

5GHz

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

8.5dB ~ 13dB

700mW

70 @ 70mA, 8V

210mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFU590QX

NXP

TRANS RF NPN 12V 200MA SOT89-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고26,622

12V

8GHz

-

6.5dB

2W

60 @ 80mA, 8V

200mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BFT92,215

NXP

TRANS PNP 25MA 15V 5GHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.5dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고259,386

15V

5GHz

2.5dB @ 500MHz

-

300mW

20 @ 14mA, 10V

25mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MRF448

M/A-Com Technology Solutions

TRANS RF NPN 50V 16A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 10V
Current - Collector (Ic) (Max): 16A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: 211-11, Style 2

재고6,256

50V

-

14dB

250W

10 @ 5A, 10V

16A

-

Chassis Mount

211-11, Style 2

NTE2687

NTE Electronics, Inc

RF TRANS NPN 450V 20MHZ TO220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 450V
Frequency - Transition: 20MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 45W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

450V

20MHz

-

45W

10 @ 4A, 5V

8A

150°C (TJ)

Through Hole

TO-220-3

TO-220

2SC4995YD-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: -

Request a Quote

8V

11GHz

1.1dB @ 900MHz

-

100mW

50 @ 20mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

2SC5013-A

CEL

RF TRANS NPN 10V 10GHZ SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

패키지: -

Request a Quote

10V

10GHz

1.8dB @ 2GHz

9.5dB

150mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

-

MS2506

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC5108-Y-LF

Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

Request a Quote

10V

6GHz

-

11dB

100mW

120 @ 5mA, 5V

30mA

-

Surface Mount

SC-75, SOT-416

SSM

BFR92ALT1

Microsemi Corporation

RF TRANS 15V 4.5GHZ SOT23

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 3dB @ 500MHz
Gain: -
Power - Max: 273mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

15V

4.5GHz

3dB @ 500MHz

-

273mW

40 @ 14mA, 10V

25mA

150°C

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23