페이지 23 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BF799WH6327XTSA1	Infineon Technologies	TRANS RF NPN 20V SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고5,872	20V	800MHz	3dB @ 100MHz	-	280mW	40 @ 20mA, 10V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BFP182WE6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고3,312	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BGB 540 E6327	Infineon Technologies	TRANSISTOR RF ACT BIAS SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 16dB ~ 17.5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고5,920	3.5V	-	1.3dB ~ 2dB @ 900MHz ~ 1.8GHz	16dB ~ 17.5dB	120mW	-	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR 949L3 E6327	Infineon Technologies	TRANSISTOR RF NPN 10V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고4,784	10V	9GHz	1dB ~ 2.5dB @ 1GHz	21.5dB	250mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFR 92W E6327	Infineon Technologies	TRANSISTOR NPN RF 15V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 11.5dB ~ 17dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고2,560	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	11.5dB ~ 17dB	280mW	70 @ 15mA, 8V	45mA	-	Surface Mount	SC-70, SOT-323	PG-SOT323-3
NE461M02-T1-QS-AZ	CEL	SAME AS 2SC5337 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고7,712	15V	-	1.5dB ~ 2dB @ 500MHz ~ 1GHz	8.3dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANTXV2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고7,360	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
EC4H09C-TL-H	ON Semiconductor	TRANS NPN 3.5V 40MA ECSP1008-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 26GHz Noise Figure (dB Typ @ f): 1.3dB @ 2GHz Gain: 15dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFDFN Supplier Device Package: 4-ECSP1008	패키지: 4-UFDFN	재고5,824	3.5V	26GHz	1.3dB @ 2GHz	15dB	120mW	70 @ 5mA, 1V	40mA	150°C (TJ)	Surface Mount	4-UFDFN	4-ECSP1008
BFG540W/XR,135	NXP	TRANS RF NPN 9GHZ 15V SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고4,160	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
NSVF2250WT1G	ON Semiconductor	TRANSISTOR NPN BIPO UHF SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고5,840	15V	-	-	-	-	-	50mA	-	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
BF959ZL1G	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,456	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BLS3135-65,114	NXP	TRANSISTOR RF POWER SOT422A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 200W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-422A Supplier Device Package: CDFM2	패키지: SOT-422A	재고2,528	75V	3.5GHz	-	7dB	200W	40 @ 2A, 5V	8A	200°C (TJ)	Surface Mount	SOT-422A	CDFM2
SD1477	STMicroelectronics	TRANSISTOR NPN RF BIPO VHF 6LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	패키지: M111	재고3,504	18V	-	-	6dB	270W	10 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M111	M111
BF494	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 20V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,703,236	20V	-	-	-	350mW	67 @ 1mA, 10V	30mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE68519-T1	CEL	TRANS NPN 2GHZ SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: 7.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고5,840	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	7.5dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
BFS17TA	Diodes Incorporated	TRANS RF NPN 1300MHZ SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고87,000	15V	1.3GHz	4.5dB @ 500MHz	-	330mW	20 @ 25mA, 1V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
1004MP	Microsemi Corporation	TRANS RF BIPO 7W 300MA 55FW1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	패키지: 55FW-1	재고5,984	50V	960MHz ~ 1.215GHz	-	7dB ~ 9dB	7W	20 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
MMBTH10LT3G	ON Semiconductor	TRANS VHF/UHF NPN 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,736	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFU725F/N1,115	NXP	TRANSISTOR NPN 40MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 55GHz Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz Gain: 10dB ~ 24dB Power - Max: 136mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	패키지: SOT-343 Reverse Pinning	재고2,016	2.8V	55GHz	0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz	10dB ~ 24dB	136mW	160 @ 10mA, 2V	40mA	150°C (TJ)	Surface Mount	SOT-343 Reverse Pinning	4-SO
BFP520H6327XTSA1	Infineon Technologies	TRANS RF NPN 3.5V 40MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고24,738	3.5V	45GHz	0.95dB @ 1.8GHz	22.5dB	100mW	70 @ 20mA, 2V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP842ESDH6327XTSA1	Infineon Technologies	IC TRANSISTOR RF NPN SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.7V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz Gain: 26dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고23,016	3.7V	60GHz	0.65dB @ 3.5GHz	26dB	120mW	150 @ 15mA, 2.5V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
CMPTH81-BK	Central Semiconductor Corp	RF TRANS PNP 20V 600MHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
CM4957-PBFREE	Central Semiconductor Corp	RF TRANS PNP 25V 2.5GHZ TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: 25dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	25V	2.5GHz	-	25dB	300mW	20 @ 2mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MT3S113TU-LF	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 11.2GHZ UFM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 11.2GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 12.5dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: UFM	패키지: -	재고7,506	5.3V	11.2GHz	1.45dB @ 1GHz	12.5dB	900mW	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Lead	UFM
PH3135-90S	MACOM Technology Solutions	TRANSISTOR,90W,3.1-3.5GHZ,2US,10 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 580W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 10.7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	패키지: -	Request a Quote	65V	-	-	7.5dB	580W	-	10.7A	200°C (TJ)	Chassis Mount	2L-FLG	-
2SC5435-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: 3-SuperMiniMold	패키지: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	8.5dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-623F	3-SuperMiniMold
2SC2620QCTR-E	Renesas Electronics Corporation	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
LC945P	onsemi	SS T092 GP XSTR NPN SPCL Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BF799WH6327XTSA1

Infineon Technologies

TRANS RF NPN 20V SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고5,872

20V

800MHz

3dB @ 100MHz

-

280mW

40 @ 20mA, 10V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BFP182WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고3,312

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BGB 540 E6327

Infineon Technologies

TRANSISTOR RF ACT BIAS SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 16dB ~ 17.5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고5,920

3.5V

-

1.3dB ~ 2dB @ 900MHz ~ 1.8GHz

16dB ~ 17.5dB

120mW

-

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR 949L3 E6327

Infineon Technologies

TRANSISTOR RF NPN 10V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고4,784

10V

9GHz

1dB ~ 2.5dB @ 1GHz

21.5dB

250mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFR 92W E6327

Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고2,560

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

11.5dB ~ 17dB

280mW

70 @ 15mA, 8V

45mA

-

Surface Mount

SC-70, SOT-323

PG-SOT323-3

NE461M02-T1-QS-AZ

CEL

SAME AS 2SC5337 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고7,712

15V

-

1.5dB ~ 2dB @ 500MHz ~ 1GHz

8.3dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANTXV2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고7,360

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

EC4H09C-TL-H

ON Semiconductor

TRANS NPN 3.5V 40MA ECSP1008-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Gain: 15dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFDFN
Supplier Device Package: 4-ECSP1008

패키지: 4-UFDFN

재고5,824

3.5V

26GHz

1.3dB @ 2GHz

15dB

120mW

70 @ 5mA, 1V

40mA

150°C (TJ)

Surface Mount

4-UFDFN

4-ECSP1008

BFG540W/XR,135

NXP

TRANS RF NPN 9GHZ 15V SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고4,160

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

NSVF2250WT1G

ON Semiconductor

TRANSISTOR NPN BIPO UHF SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고5,840

15V

-

50mA

-

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

BF959ZL1G

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,456

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BLS3135-65,114

NXP

TRANSISTOR RF POWER SOT422A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-422A
Supplier Device Package: CDFM2

패키지: SOT-422A

재고2,528

75V

3.5GHz

-

7dB

200W

40 @ 2A, 5V

8A

200°C (TJ)

Surface Mount

SOT-422A

CDFM2

SD1477

STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M111
Supplier Device Package: M111

패키지: M111

재고3,504

18V

-

6dB

270W

10 @ 5A, 5V

20A

200°C (TJ)

Surface Mount

M111

BF494

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,703,236

20V

-

350mW

67 @ 1mA, 10V

30mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE68519-T1

CEL

TRANS NPN 2GHZ SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: 7.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고5,840

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

7.5dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-523

BFS17TA

Diodes Incorporated

TRANS RF NPN 1300MHZ SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고87,000

15V

1.3GHz

4.5dB @ 500MHz

-

330mW

20 @ 25mA, 1V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

1004MP

Microsemi Corporation

TRANS RF BIPO 7W 300MA 55FW1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

패키지: 55FW-1

재고5,984

50V

960MHz ~ 1.215GHz

-

7dB ~ 9dB

7W

20 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55FW-1

MMBTH10LT3G

ON Semiconductor

TRANS VHF/UHF NPN 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,736

25V

650MHz

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFU725F/N1,115

NXP

TRANSISTOR NPN 40MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 55GHz
Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain: 10dB ~ 24dB
Power - Max: 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Supplier Device Package: 4-SO

패키지: SOT-343 Reverse Pinning

재고2,016

2.8V

55GHz

0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz

10dB ~ 24dB

136mW

160 @ 10mA, 2V

40mA

150°C (TJ)

Surface Mount

SOT-343 Reverse Pinning

4-SO

BFP520H6327XTSA1

Infineon Technologies

TRANS RF NPN 3.5V 40MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고24,738

3.5V

45GHz

0.95dB @ 1.8GHz

22.5dB

100mW

70 @ 20mA, 2V

40mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP842ESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.7V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Gain: 26dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고23,016

3.7V

60GHz

0.65dB @ 3.5GHz

26dB

120mW

150 @ 15mA, 2.5V

40mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

CMPTH81-BK

Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

CM4957-PBFREE

Central Semiconductor Corp

RF TRANS PNP 25V 2.5GHZ TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 25dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

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25V

2.5GHz

-

25dB

300mW

20 @ 2mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MT3S113TU-LF

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 12.5dB
Power - Max: 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: UFM

패키지: -

재고7,506

5.3V

11.2GHz

1.45dB @ 1GHz

12.5dB

900mW

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Lead

UFM

PH3135-90S

MACOM Technology Solutions

TRANSISTOR,90W,3.1-3.5GHZ,2US,10

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 580W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 10.7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

패키지: -

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65V

-

7.5dB

580W

-

10.7A

200°C (TJ)

Chassis Mount

2L-FLG

-

2SC5435-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: 3-SuperMiniMold

패키지: -

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6V

12GHz

1.5dB @ 2GHz

8.5dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-623F

3-SuperMiniMold

2SC2620QCTR-E

Renesas Electronics Corporation

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LC945P

onsemi

SS T092 GP XSTR NPN SPCL

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-