페이지 20 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFG 193 E6433	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고4,000	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	600mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
2N3866A	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고15,828	30V	400MHz	-	-	1W	25 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MPSH81_D26Z	Fairchild/ON Semiconductor	TRANS RF PNP 20V 50MA TO-92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,888	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE663M04-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 190mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고3,664	3.3V	15GHz	1.2dB @ 2GHz	14dB	190mW	50 @ 10mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
HFA3046B96	Intersil	IC TRANS ARRAY NPN DIFF 14-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고7,648	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
KSC1674CYTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고24,000	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC2786OTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)	재고4,432	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
NE68530-T1	CEL	TRANS NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: 7dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고6,192	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	7dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFQ19,115	NXP	TRANS NPN 15V 5.5GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.3dB @ 500MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고3,344	15V	5.5GHz	3.3dB @ 500MHz	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
PH2729-130M	M/A-Com Technology Solutions	TRANSISTOR 130WPK 2.7-2.9GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 63V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.73dB ~ 8.85dB Power - Max: 130W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고2,144	63V	-	-	9.73dB ~ 8.85dB	130W	-	12.5A	200°C (TJ)	Chassis Mount	-	-
MDS400	Microsemi Corporation	TRANS RF BIPO 1450W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1450W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	패키지: 55KT	재고6,224	55V	1.03GHz ~ 1.09GHz	-	6.5dB	1450W	10 @ 1A, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-55	Microsemi Corporation	TRANS BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	패키지: 55AW	재고3,136	50V	1.2GHz ~ 1.4GHz	-	7dB	175W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
1214-30	Microsemi Corporation	TRANS RF BIPO 88W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	패키지: 55AW	재고4,832	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2441	Microsemi Corporation	TRANS RF BIPO 1458W 22A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	패키지: M112	재고4,896	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1458W	5 @ 250mA, 5V	22A	200°C (TJ)	Chassis Mount	M112	M112
2A8	Microsemi Corporation	TRANS RF BIPO 5.3W 300MA 55EU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 21V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55EU Supplier Device Package: 55EU	패키지: 55EU	재고2,560	21V	2GHz	-	7dB ~ 9dB	5.3W	20 @ 100mA, 5V	300mA	150°C (TJ)	Chassis Mount	55EU	55EU
MAX2602ESA+T	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고38,880	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
BFQ790H6327XTSA1	Infineon Technologies	RF BIP TRANSISTORS Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.1V Frequency - Transition: 1.85GHz Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz Gain: 17dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고2,112	6.1V	1.85GHz	2.6dB @ 1.8GHz	17dB	1.5W	60 @ 250mA, 5V	300mA	-	Surface Mount	TO-243AA	SOT-89
BFU550VL	NXP	TRANS RF NPN 12V 50MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz Gain: 15dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,984	12V	11GHz	1.3dB @ 1.8GHz	15dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
PH1090-75L	M/A-Com Technology Solutions	TRANSISTOR 75W 1030-1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10.70dB ~ 10.81dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,688	70V	-	-	10.70dB ~ 10.81dB	75W	-	6A	200°C (TJ)	Chassis Mount	-	-
BFR340FH6327XTSA1	Infineon Technologies	TRANS RF NPN 9V 20MA 3TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz Gain: 13dB ~ 28dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고3,360	9V	14GHz	0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz	13dB ~ 28dB	75mW	90 @ 5mA, 3V	20mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
BFU530XRR	NXP	TRANS RF NPN 12V 40MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.65dB @ 900MHz Gain: 21dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고2,752	12V	11GHz	0.65dB @ 900MHz	21dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
NE58219-T1-A	CEL	TRANSISTOR BIPOLAR .9GHZ 3-SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 60mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: 3-SuperMiniMold (19)	패키지: -	Request a Quote	12V	5GHz	-	-	100mW	60 @ 5mA, 5V	60mA	-	Surface Mount	SC-75, SOT-416	3-SuperMiniMold (19)
MAPR-001011-850S00	MACOM Technology Solutions	TRANSISTOR,850W,1025-1150MHZ,50V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB Power - Max: 11600W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 250A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	80V	1.15GHz	-	7.8dB	11600W	-	250A	200°C	Chassis Mount	2L-FLG	2L-FLG
SD1019-02	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD8266-01H	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4184-T1-A	Renesas Electronics Corporation	UHF/VHF MIXER NPN TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE108	NTE Electronics, Inc	RF TRANS NPN 15V 600MHZ TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	15V	600MHz	6dB @ 60MHz	15dB	625mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SC5594XP-TL-H	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: -	Request a Quote	4.5V	24GHz	1.2dB @ 1.8GHz	18dB	100mW	60 @ 20mA, 2V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4

BFG 193 E6433

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고4,000

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

600mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

2N3866A

Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고15,828

30V

400MHz

-

1W

25 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MPSH81_D26Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,888

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE663M04-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 190mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고3,664

3.3V

15GHz

1.2dB @ 2GHz

14dB

190mW

50 @ 10mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

HFA3046B96

Intersil

IC TRANS ARRAY NPN DIFF 14-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고7,648

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

KSC1674CYTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고24,000

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC2786OTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)

재고4,432

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

NE68530-T1

CEL

TRANS NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: 7dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고6,192

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

7dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFQ19,115

NXP

TRANS NPN 15V 5.5GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고3,344

15V

5.5GHz

3.3dB @ 500MHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

PH2729-130M

M/A-Com Technology Solutions

TRANSISTOR 130WPK 2.7-2.9GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 63V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.73dB ~ 8.85dB
Power - Max: 130W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 12.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,144

63V

-

9.73dB ~ 8.85dB

130W

-

12.5A

200°C (TJ)

Chassis Mount

-

MDS400

Microsemi Corporation

TRANS RF BIPO 1450W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1450W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

패키지: 55KT

재고6,224

55V

1.03GHz ~ 1.09GHz

-

6.5dB

1450W

10 @ 1A, 5V

40A

200°C (TJ)

Chassis Mount

55KT

1214-55

Microsemi Corporation

TRANS BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

패키지: 55AW

재고3,136

50V

1.2GHz ~ 1.4GHz

-

7dB

175W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

1214-30

Microsemi Corporation

TRANS RF BIPO 88W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

패키지: 55AW

재고4,832

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

MS2441

Microsemi Corporation

TRANS RF BIPO 1458W 22A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

패키지: M112

재고4,896

65V

1.025GHz ~ 1.15GHz

-

6.5dB

1458W

5 @ 250mA, 5V

22A

200°C (TJ)

Chassis Mount

M112

2A8

Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55EU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 21V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55EU
Supplier Device Package: 55EU

패키지: 55EU

재고2,560

21V

2GHz

-

7dB ~ 9dB

5.3W

20 @ 100mA, 5V

300mA

150°C (TJ)

Chassis Mount

55EU

MAX2602ESA+T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고38,880

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

BFQ790H6327XTSA1

Infineon Technologies

RF BIP TRANSISTORS

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.1V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Gain: 17dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고2,112

6.1V

1.85GHz

2.6dB @ 1.8GHz

17dB

1.5W

60 @ 250mA, 5V

300mA

-

Surface Mount

TO-243AA

SOT-89

BFU550VL

NXP

TRANS RF NPN 12V 50MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
Gain: 15dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,984

12V

11GHz

1.3dB @ 1.8GHz

15dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

PH1090-75L

M/A-Com Technology Solutions

TRANSISTOR 75W 1030-1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10.70dB ~ 10.81dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,688

70V

-

10.70dB ~ 10.81dB

75W

-

6A

200°C (TJ)

Chassis Mount

-

BFR340FH6327XTSA1

Infineon Technologies

TRANS RF NPN 9V 20MA 3TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Gain: 13dB ~ 28dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고3,360

9V

14GHz

0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz

13dB ~ 28dB

75mW

90 @ 5mA, 3V

20mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

BFU530XRR

NXP

TRANS RF NPN 12V 40MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 21dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고2,752

12V

11GHz

0.65dB @ 900MHz

21dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

NE58219-T1-A

CEL

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: 3-SuperMiniMold (19)

패키지: -

Request a Quote

12V

5GHz

-

100mW

60 @ 5mA, 5V

60mA

-

Surface Mount

SC-75, SOT-416

3-SuperMiniMold (19)

MAPR-001011-850S00

MACOM Technology Solutions

TRANSISTOR,850W,1025-1150MHZ,50V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB
Power - Max: 11600W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 250A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

80V

1.15GHz

-

7.8dB

11600W

-

250A

200°C

Chassis Mount

2L-FLG

SD1019-02

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SD8266-01H

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC4184-T1-A

Renesas Electronics Corporation

UHF/VHF MIXER NPN TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE108

NTE Electronics, Inc

RF TRANS NPN 15V 600MHZ TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

15V

600MHz

6dB @ 60MHz

15dB

625mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2SC5594XP-TL-H

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: -

Request a Quote

4.5V

24GHz

1.2dB @ 1.8GHz

18dB

100mW

60 @ 20mA, 2V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4