페이지 21 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 640FESD E6327	Infineon Technologies	TRANS RF NPN 46GHZ 4.7V TSFP-4-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Gain: 8B ~ 30.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고3,312	4.7V	46GHz	0.55dB ~ 1.7dB @ 150MHz ~ 10GHz	8B ~ 30.5dB	200mW	110 @ 30mA, 3V	50mA	-	Surface Mount	4-SMD, Flat Leads	4-TSFP
BF799WE6327BTSA1	Infineon Technologies	TRANSISTOR NPN RF 20V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고2,176	20V	800MHz	3dB @ 100MHz	-	280mW	40 @ 20mA, 10V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
2SC5338-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: 10dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고126,444	12V	6GHz	3.5dB @ 1GHz	10dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
START499D	STMicroelectronics	TRANS RF NPN 4.5V 1A SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB ~ 14dB Power - Max: 1.7W DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V Current - Collector (Ic) (Max): 1A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고7,792	4.5V	-	-	13dB ~ 14dB	1.7W	150 @ 160mA, 3V	1A	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
HFA3128RZ	Intersil	IC TRANSISTOR ARRAY PNP 16-QFN Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	패키지: 16-VFQFN Exposed Pad	재고5,584	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
FPNH10	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,152	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PN918	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 15V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,552	15V	600MHz	6dB @ 60MHz	15dB	350mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFR92A,215	NXP	TRANS NPN 25MA 15V 5GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,384	15V	5GHz	2.1dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	65 @ 15mA, 10V	25mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
NE85634-T1	CEL	TRANS NPN 1GHZ SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고46,680	12V	6.5GHz	1.4dB @ 1GHz	-	2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BFR106,215	NXP	TRANS NPN 15V 5GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,256	15V	5GHz	3.5dB @ 800MHz	-	500mW	25 @ 50mA, 9V	100mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFQ67W,135	NXP	TRANS NPN 10V 20MA 8GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,728	10V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFG67,215	NXP	TRANS RF NPN 8GHZ 10V SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고5,728	10V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 2GHz	-	380mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFG520W,115	NXP	TRANS NPN 6V 70MA SOT343N Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	패키지: SOT-343 Reverse Pinning	재고3,376	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	500mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SOT-343 Reverse Pinning	4-SO
TAN75A	Microsemi Corporation	TRANS RF BIPO 290W 9A 55AZ1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AZ Supplier Device Package: 55AZ	패키지: 55AZ	재고7,120	50V	960MHz ~ 1.215GHz	-	8dB ~ 8.5dB	290W	10 @ 15mA, 5V	9A	200°C (TJ)	Chassis Mount	55AZ	55AZ
HFA3127RZ96	Intersil	IC TRANS ARRAY 5X NPN 16-QFN Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	패키지: 16-VFQFN Exposed Pad	재고4,128	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
UPA800T-T1	CEL	TRANS NPN HF FT=8GHZ SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	패키지: 6-TSSOP, SC-88, SOT-363	재고1,760,460	10V	8GHz	1.9dB ~ 3.2dB @ 2GHz	-	200mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
MRF5812R2	Microsemi Corporation	RF TRANS NPN 18V 200MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB @ 500MHz Gain: 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고266,268	18V	5GHz	2dB @ 500MHz	15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BFU530VL	NXP	TRANS RF NPN 12V 40MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고6,512	12V	11GHz	1.1dB @ 1.8GHz	15.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFU520XRVL	NXP	TRANS RF NPN 12V 30MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 17.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고3,008	12V	10.5GHz	1dB @ 1.8GHz	17.5dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
MRF1000MB	M/A-Com Technology Solutions	TRANS NPN 0.7W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10.7dB ~ 12dB Power - Max: 0.7W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 332A-02 Supplier Device Package: 332A-03, Style 2	패키지: 332A-02	재고10,980	20V	-	-	10.7dB ~ 12dB	0.7W	10 @ 100mA, 5V	200mA	-	Chassis Mount	332A-02	332A-03, Style 2
2SC393400L	Panasonic Electronic Components	TRANS NPN 12VCEO 30MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.5dB @ 800MHz Gain: 9dB ~ 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고7,344	12V	4.5GHz	1.3dB ~ 2.5dB @ 800MHz	9dB ~ 12dB	150mW	40 @ 10mA, 10V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
BFT93,215	NXP	TRANS PNP 12V 5GHZ SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.4dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고58,962	12V	5GHz	2.4dB @ 500MHz	-	300mW	20 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFU520XRR	NXP	TRANS RF NPN 12V 30MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 0.65dB @ 900MHz Gain: 20dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고24,630	12V	10.5GHz	0.65dB @ 900MHz	20dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
2N5109-PBFREE	Central Semiconductor Corp	RF TRANS NPN 20V 1.2GHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	-	1W	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
PH9105	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP616-2N5160-CT	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	40V	500MHz	-	-	-	10 @ 50mA, 5V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
MRF5812MR1	Microsemi Corporation	TRANS NPN 15V 200MA Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS2N2857UB-LC	Microsemi Corporation	RF TRANS NPN 15V UB Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB

BFP 640FESD E6327

Infineon Technologies

TRANS RF NPN 46GHZ 4.7V TSFP-4-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain: 8B ~ 30.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고3,312

4.7V

46GHz

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

8B ~ 30.5dB

200mW

110 @ 30mA, 3V

50mA

-

Surface Mount

4-SMD, Flat Leads

4-TSFP

BF799WE6327BTSA1

Infineon Technologies

TRANSISTOR NPN RF 20V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고2,176

20V

800MHz

3dB @ 100MHz

-

280mW

40 @ 20mA, 10V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

2SC5338-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: 10dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고126,444

12V

6GHz

3.5dB @ 1GHz

10dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

START499D

STMicroelectronics

TRANS RF NPN 4.5V 1A SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB ~ 14dB
Power - Max: 1.7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고7,792

4.5V

-

13dB ~ 14dB

1.7W

150 @ 160mA, 3V

1A

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

HFA3128RZ

Intersil

IC TRANSISTOR ARRAY PNP 16-QFN

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

패키지: 16-VFQFN Exposed Pad

재고5,584

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

FPNH10

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,152

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PN918

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,552

15V

600MHz

6dB @ 60MHz

15dB

350mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFR92A,215

NXP

TRANS NPN 25MA 15V 5GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,384

15V

5GHz

2.1dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

65 @ 15mA, 10V

25mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

NE85634-T1

CEL

TRANS NPN 1GHZ SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고46,680

12V

6.5GHz

1.4dB @ 1GHz

-

2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BFR106,215

NXP

TRANS NPN 15V 5GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,256

15V

5GHz

3.5dB @ 800MHz

-

500mW

25 @ 50mA, 9V

100mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFQ67W,135

NXP

TRANS NPN 10V 20MA 8GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,728

10V

8GHz

1.3dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFG67,215

NXP

TRANS RF NPN 8GHZ 10V SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고5,728

10V

8GHz

1.3dB ~ 3dB @ 1GHz ~ 2GHz

-

380mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFG520W,115

NXP

TRANS NPN 6V 70MA SOT343N

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Supplier Device Package: 4-SO

패키지: SOT-343 Reverse Pinning

재고3,376

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

500mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SOT-343 Reverse Pinning

4-SO

TAN75A

Microsemi Corporation

TRANS RF BIPO 290W 9A 55AZ1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AZ
Supplier Device Package: 55AZ

패키지: 55AZ

재고7,120

50V

960MHz ~ 1.215GHz

-

8dB ~ 8.5dB

290W

10 @ 15mA, 5V

9A

200°C (TJ)

Chassis Mount

55AZ

HFA3127RZ96

Intersil

IC TRANS ARRAY 5X NPN 16-QFN

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

패키지: 16-VFQFN Exposed Pad

재고4,128

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

UPA800T-T1

CEL

TRANS NPN HF FT=8GHZ SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

패키지: 6-TSSOP, SC-88, SOT-363

재고1,760,460

10V

8GHz

1.9dB ~ 3.2dB @ 2GHz

-

200mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

MRF5812R2

Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB @ 500MHz
Gain: 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고266,268

18V

5GHz

2dB @ 500MHz

15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BFU530VL

NXP

TRANS RF NPN 12V 40MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고6,512

12V

11GHz

1.1dB @ 1.8GHz

15.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFU520XRVL

NXP

TRANS RF NPN 12V 30MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고3,008

12V

10.5GHz

1dB @ 1.8GHz

17.5dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

MRF1000MB

M/A-Com Technology Solutions

TRANS NPN 0.7W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10.7dB ~ 12dB
Power - Max: 0.7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 332A-02
Supplier Device Package: 332A-03, Style 2

패키지: 332A-02

재고10,980

20V

-

10.7dB ~ 12dB

0.7W

10 @ 100mA, 5V

200mA

-

Chassis Mount

332A-02

332A-03, Style 2

2SC393400L

Panasonic Electronic Components

TRANS NPN 12VCEO 30MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.5dB @ 800MHz
Gain: 9dB ~ 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고7,344

12V

4.5GHz

1.3dB ~ 2.5dB @ 800MHz

9dB ~ 12dB

150mW

40 @ 10mA, 10V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

BFT93,215

NXP

TRANS PNP 12V 5GHZ SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고58,962

12V

5GHz

2.4dB @ 500MHz

-

300mW

20 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFU520XRR

NXP

TRANS RF NPN 12V 30MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고24,630

12V

10.5GHz

0.65dB @ 900MHz

20dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

2N5109-PBFREE

Central Semiconductor Corp

RF TRANS NPN 20V 1.2GHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

-

1W

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

PH9105

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CP616-2N5160-CT

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

40V

500MHz

-

10 @ 50mA, 5V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die

MRF5812MR1

Microsemi Corporation

TRANS NPN 15V 200MA

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANS2N2857UB-LC

Microsemi Corporation

RF TRANS NPN 15V UB

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB