페이지 32 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 650F E6327	Infineon Technologies	TRANSISTOR RF NPN 4.5V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고4,576	4.5V	42GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	11dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
2SC5751-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 16dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고711,060	6V	15GHz	1.7dB @ 2GHz	16dB	205mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
2SC5006-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고562,704	12V	4.5GHz	1.2dB @ 1GHz	9dB	125mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
MS2201	Microsemi Corporation	TRANS RF BIPO 10W 250MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	패키지: M220	재고16,476	45V	1.025GHz ~ 1.15GHz	-	9dB	10W	0.95 @ 10mA, 5V	250mA	200°C (TJ)	Chassis Mount	M220	M220
2SC3932GTL	Panasonic Electronic Components	TRANS NPN 20VCEO 50MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고213,600	20V	1.6GHz	-	20dB	150mW	800 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
AT-41486-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 9dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고2,000	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	9dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-42086-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz Gain: 9dB ~ 13dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고4,832	12V	8GHz	1.9dB ~ 3.5dB @ 2GHz ~ 4GHz	9dB ~ 13dB	500mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-42010	Broadcom Limited	TRANS NPN BIPO 12V 80MA 100-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10dB ~ 13.5dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (100 mil) Supplier Device Package: -	패키지: 4-SMD (100 mil)	재고5,120	12V	8GHz	1.9dB ~ 3dB @ 2GHz ~ 4GHz	10dB ~ 13.5dB	600mW	30 @ 35mA, 8V	80mA	200°C (TJ)	Surface Mount	4-SMD (100 mil)	-
NE68039-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 11dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고2,000	10V	10GHz	1.8dB @ 2GHz	11dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
KSC2755OMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 0.3dB @ 200MHz Gain: 20dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고1,300,860	30V	600MHz	0.3dB @ 200MHz	20dB ~ 23dB	150mW	90 @ 3mA, 10V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FMMTH10TC	Diodes Incorporated	TRANSISTOR RF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,360	25V	650MHz	3dB ~ 5dB @ 500MHz	-	330mW	60 @ 4mA, 10V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NE85633-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,696	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MPS3563	ON Semiconductor	TRANS NPN RF SS 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 6.5dB @ 60MHz Gain: 14dB @ 200MHz Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,472	12V	1.5GHz	6.5dB @ 60MHz	14dB @ 200MHz	350W	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
PH1090-550S	M/A-Com Technology Solutions	TRANSISTOR BIPOLAR 550W 1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.06dB Power - Max: 550W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 28A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,064	80V	-	-	8.06dB	550W	-	28A	200°C (TJ)	Chassis Mount	-	-
2729-170	Microsemi Corporation	TRANS RF BIPO 570W 17A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB ~ 8.6dB Power - Max: 570W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V Current - Collector (Ic) (Max): 17A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	패키지: 55KS-1	재고2,016	65V	2.7GHz ~ 2.9GHz	-	8.2dB ~ 8.6dB	570W	18 @ 60mA, 5V	17A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
CM4957	Central Semiconductor Corp	RF TRANS PNP 25V 2.5GHZ TO-72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: 25dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고2,416	25V	2.5GHz	-	25dB	300mW	20 @ 2mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
AT-31033-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 9dB ~ 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고109,200	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	9dB ~ 11dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MRF428	M/A-Com Technology Solutions	TRANS RF NPN 55V 20A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 15dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: 211-11, Style 2	재고5,760	55V	-	-	15dB	150W	10 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
BFP 181 E7764	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 17.5dB ~ 21dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고7,152	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	17.5dB ~ 21dB	175mW	70 @ 70mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
BFP450H6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 100MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고21,930	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
LM3046MX/NOPB	Texas Instruments	IC TRANSISTOR ARRAY 14-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.25dB @ 1kHz Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고128,064	15V	-	3.25dB @ 1kHz	-	750mW	40 @ 1mA, 3V	50mA	-40°C ~ 85°C (TA)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
NTE2634	NTE Electronics, Inc	T-PNP SI VIDEO DR 1GHZ TO-126 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 95V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector (Ic) (Max): 300mA Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	95V	1.2GHz	-	-	3W	20 @ 50mA, 10V	300mA	175°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
CEN1107	Central Semiconductor Corp	TRANSISTOR NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
12A02SS-TL-E	onsemi	BIP PNP 0.8A 12V Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5624VH-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 28GHz Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: -	Request a Quote	3.5V	28GHz	1.2dB @ 1.8GHz	18dB	100mW	80 @ 20mA, 2V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
2SC5509-A	CEL	RF TRANS NPN 3.3V 15GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 190mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: -	패키지: -	Request a Quote	3.3V	15GHz	1.2dB @ 2GHz	14dB	190mW	50 @ 10mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	-
NTE319	NTE Electronics, Inc	RF TRANS NPN 20V TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): 2.7dB @ 45MHz Gain: 29dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	20V	-	2.7dB @ 45MHz	29dB	175mW	20 @ 2mA, 10V	-	175°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
NTE395	NTE Electronics, Inc	RF TRANS PNP 25V 2.3GHZ TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): 2.5dB ~ 4dB @ 200MHz ~ 800MHz Gain: 16dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	25V	2.3GHz	2.5dB ~ 4dB @ 200MHz ~ 800MHz	16dB	225mW	20 @ 10mA, 10V	50mA	200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72

BFP 650F E6327

Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고4,576

4.5V

42GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

11dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

2SC5751-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 16dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고711,060

6V

15GHz

1.7dB @ 2GHz

16dB

205mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SOT-343F

2SC5006-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고562,704

12V

4.5GHz

1.2dB @ 1GHz

9dB

125mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-523

MS2201

Microsemi Corporation

TRANS RF BIPO 10W 250MA M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

패키지: M220

재고16,476

45V

1.025GHz ~ 1.15GHz

-

9dB

10W

0.95 @ 10mA, 5V

250mA

200°C (TJ)

Chassis Mount

M220

2SC3932GTL

Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고213,600

20V

1.6GHz

-

20dB

150mW

800 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

AT-41486-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고2,000

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

9dB ~ 18dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

AT-42086-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
Gain: 9dB ~ 13dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고4,832

12V

8GHz

1.9dB ~ 3.5dB @ 2GHz ~ 4GHz

9dB ~ 13dB

500mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

AT-42010

Broadcom Limited

TRANS NPN BIPO 12V 80MA 100-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10dB ~ 13.5dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (100 mil)
Supplier Device Package: -

패키지: 4-SMD (100 mil)

재고5,120

12V

8GHz

1.9dB ~ 3dB @ 2GHz ~ 4GHz

10dB ~ 13.5dB

600mW

30 @ 35mA, 8V

80mA

200°C (TJ)

Surface Mount

4-SMD (100 mil)

-

NE68039-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 11dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고2,000

10V

10GHz

1.8dB @ 2GHz

11dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

KSC2755OMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고1,300,860

30V

600MHz

0.3dB @ 200MHz

20dB ~ 23dB

150mW

90 @ 3mA, 10V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

FMMTH10TC

Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,360

25V

650MHz

3dB ~ 5dB @ 500MHz

-

330mW

60 @ 4mA, 10V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NE85633-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,696

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MPS3563

ON Semiconductor

TRANS NPN RF SS 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
Gain: 14dB @ 200MHz
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,472

12V

1.5GHz

6.5dB @ 60MHz

14dB @ 200MHz

350W

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

PH1090-550S

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 550W 1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.06dB
Power - Max: 550W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 28A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,064

80V

-

8.06dB

550W

-

28A

200°C (TJ)

Chassis Mount

-

2729-170

Microsemi Corporation

TRANS RF BIPO 570W 17A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB ~ 8.6dB
Power - Max: 570W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V
Current - Collector (Ic) (Max): 17A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

패키지: 55KS-1

재고2,016

65V

2.7GHz ~ 2.9GHz

-

8.2dB ~ 8.6dB

570W

18 @ 60mA, 5V

17A

200°C (TJ)

Chassis Mount

55KS-1

CM4957

Central Semiconductor Corp

RF TRANS PNP 25V 2.5GHZ TO-72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 25dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고2,416

25V

2.5GHz

-

25dB

300mW

20 @ 2mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

AT-31033-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 9dB ~ 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고109,200

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

9dB ~ 11dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MRF428

M/A-Com Technology Solutions

TRANS RF NPN 55V 20A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 15dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: 211-11, Style 2

재고5,760

55V

-

15dB

150W

10 @ 5A, 5V

20A

-

Chassis Mount

211-11, Style 2

BFP 181 E7764

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 17.5dB ~ 21dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고7,152

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

17.5dB ~ 21dB

175mW

70 @ 70mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

BFP450H6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 100MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고21,930

5V

24GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 50mA, 4V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

LM3046MX/NOPB

Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고128,064

15V

-

3.25dB @ 1kHz

-

750mW

40 @ 1mA, 3V

50mA

-40°C ~ 85°C (TA)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

NTE2634

NTE Electronics, Inc

T-PNP SI VIDEO DR 1GHZ TO-126

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 95V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

Request a Quote

95V

1.2GHz

-

3W

20 @ 50mA, 10V

300mA

175°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

CEN1107

Central Semiconductor Corp

TRANSISTOR NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

12A02SS-TL-E

onsemi

BIP PNP 0.8A 12V

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC5624VH-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 28GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: -

Request a Quote

3.5V

28GHz

1.2dB @ 1.8GHz

18dB

100mW

80 @ 20mA, 2V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

2SC5509-A

CEL

RF TRANS NPN 3.3V 15GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 190mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: -

패키지: -

Request a Quote

3.3V

15GHz

1.2dB @ 2GHz

14dB

190mW

50 @ 10mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

-

NTE319

NTE Electronics, Inc

RF TRANS NPN 20V TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
Gain: 29dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

20V

-

2.7dB @ 45MHz

29dB

175mW

20 @ 2mA, 10V

-

175°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

NTE395

NTE Electronics, Inc

RF TRANS PNP 25V 2.3GHZ TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 2.5dB ~ 4dB @ 200MHz ~ 800MHz
Gain: 16dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

25V

2.3GHz

2.5dB ~ 4dB @ 200MHz ~ 800MHz

16dB

225mW

20 @ 10mA, 10V

50mA

200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72