페이지 34 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFY193PZZZA1	Infineon Technologies	TRANS RF NPN 12V 80MA MICRO-X1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz Gain: 12.5dB ~ 13.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: MICRO-X1 Supplier Device Package: MICRO-X1	패키지: MICRO-X1	재고5,760	12V	7.5GHz	2.3dB ~ 2.9dB @ 2GHz	12.5dB ~ 13.5dB	580mW	50 @ 30mA, 8V	80mA	200°C (TJ)	Surface Mount	MICRO-X1	MICRO-X1
BFR 360L3 E6327	Infineon Technologies	TRANSISTOR RF NPN 6V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Gain: 11.5dB ~ 16dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고2,288	9V	14GHz	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz	11.5dB ~ 16dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
NE85639-T1-R27-A	CEL	SAME AS 2SC4093 NPN SILICON AMPL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고3,728	12V	9GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC5231A-8-TL-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF SMCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	패키지: SC-75, SOT-416	재고6,576	10V	7GHz	1dB @ 1GHz	12dB	100mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SMCP
NE46234-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고4,896	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
AT-41500-GP4	Broadcom Limited	IC TRANS NPN GP BIPOLAR 86PP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고4,624	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	200°C (TJ)	Surface Mount	Die	Die
MPSH10_D27Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,352	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS5179_D27Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,248	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF959RL1	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,904	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-41533-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고45,600	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
KSC1393OBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,496	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	60 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
UPA806T-T1	CEL	TRANS NPN HF FT=12GHZ SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	패키지: 6-TSSOP, SC-88, SOT-363	재고211,452	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	200mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
BFS17A,235	NXP	TRANS NPN 15V 25MA 3GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 2.8GHz Noise Figure (dB Typ @ f): 2.5dB @ 800MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,016	15V	2.8GHz	2.5dB @ 800MHz	-	300mW	25 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFS17SH6327XTSA1	Infineon Technologies	TRANS RF NPN 15V 25MA SOT363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고5,440	15V	1.4GHz	3dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
2729-125	Microsemi Corporation	TRANS RF BIPO 350W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	패키지: 55KS-1	재고5,008	65V	2.7GHz ~ 2.9GHz	-	9dB ~ 9.5dB	350W	18 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
MS2267	Microsemi Corporation	TRANS RF BIPO 575W 20A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	패키지: M214	재고4,592	60V	960MHz ~ 1.215GHz	-	8dB ~ 8.7dB	575W	10 @ 1A, 5V	20A	250°C (TJ)	Chassis Mount	M214	M214
MS1003	Microsemi Corporation	TRANS RF BIPO 270W 20A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 136MHz ~ 175MHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	패키지: M111	재고3,344	18V	136MHz ~ 175MHz	-	6dB	270W	10 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M111	M111
MS1512	Microsemi Corporation	TRANS BIPO NPN M122 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 860MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 19.4W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	패키지: M122	재고7,984	25V	860MHz	-	10dB	19.4W	-	1.2A	200°C (TJ)	Chassis, Stud Mount	M122	M122
2SC4808G0L	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SSMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz Gain: 11dB ~ 14dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	패키지: SC-89, SOT-490	재고22,608	10V	6GHz	1.3dB ~ 2dB @ 800MHz	11dB ~ 14dB	125mW	50 @ 20mA, 8V	80mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3
MMBTH11	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFP 183 E7764	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고22,506	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
PRF947,115	NXP	TRANSISTOR NPN 10V 8.5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고95,382	10V	8.5GHz	1.5dB ~ 2.1dB @ 1GHz ~ 2GHz	-	250mW	50 @ 5mA, 6V	50mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
MMBTH10	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고8,018,004	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
C5H2350N10X	Ampleon USA Inc.	C5H2350N10/DFN-4.5X4-6-1/TR7, 10 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2814-5-TB-E	onsemi	TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 320MHz Noise Figure (dB Typ @ f): - Gain: 25dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	-	320MHz	-	25dB	150mW	135 @ 1mA, 6V	30mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
BFP520FE6327	Infineon Technologies	LOW-NOISE SI TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: -	Request a Quote	3.5V	45GHz	0.95dB @ 1.8GHz	22.5dB	100mW	70 @ 20mA, 2V	40mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
PH1214-300M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,RADAR,300W,1. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 90V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.75dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	90V	-	-	8.75dB	583W	-	21A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
CP223-2N3866-WN	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	30V	500MHz	-	10dB	-	10 @ 50mA, 5V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die

BFY193PZZZA1

Infineon Technologies

TRANS RF NPN 12V 80MA MICRO-X1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: MICRO-X1
Supplier Device Package: MICRO-X1

패키지: MICRO-X1

재고5,760

12V

7.5GHz

2.3dB ~ 2.9dB @ 2GHz

12.5dB ~ 13.5dB

580mW

50 @ 30mA, 8V

80mA

200°C (TJ)

Surface Mount

MICRO-X1

BFR 360L3 E6327

Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고2,288

9V

14GHz

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

11.5dB ~ 16dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

NE85639-T1-R27-A

CEL

SAME AS 2SC4093 NPN SILICON AMPL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고3,728

12V

9GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC5231A-8-TL-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF SMCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SMCP

패키지: SC-75, SOT-416

재고6,576

10V

7GHz

1dB @ 1GHz

12dB

100mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SMCP

NE46234-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고4,896

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

AT-41500-GP4

Broadcom Limited

IC TRANS NPN GP BIPOLAR 86PP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 8dB ~ 17dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고4,624

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

8dB ~ 17dB

500mW

30 @ 10mA, 8V

60mA

200°C (TJ)

Surface Mount

Die

MPSH10_D27Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,352

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS5179_D27Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,248

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF959RL1

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,904

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-41533-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고45,600

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

KSC1393OBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,496

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

60 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

UPA806T-T1

CEL

TRANS NPN HF FT=12GHZ SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

패키지: 6-TSSOP, SC-88, SOT-363

재고211,452

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

200mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

BFS17A,235

NXP

TRANS NPN 15V 25MA 3GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2.8GHz
Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,016

15V

2.8GHz

2.5dB @ 800MHz

-

300mW

25 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFS17SH6327XTSA1

Infineon Technologies

TRANS RF NPN 15V 25MA SOT363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고5,440

15V

1.4GHz

3dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

2729-125

Microsemi Corporation

TRANS RF BIPO 350W 15A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

패키지: 55KS-1

재고5,008

65V

2.7GHz ~ 2.9GHz

-

9dB ~ 9.5dB

350W

18 @ 600mA, 5V

15A

200°C (TJ)

Chassis Mount

55KS-1

MS2267

Microsemi Corporation

TRANS RF BIPO 575W 20A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

패키지: M214

재고4,592

60V

960MHz ~ 1.215GHz

-

8dB ~ 8.7dB

575W

10 @ 1A, 5V

20A

250°C (TJ)

Chassis Mount

M214

MS1003

Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 136MHz ~ 175MHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M111
Supplier Device Package: M111

패키지: M111

재고3,344

18V

136MHz ~ 175MHz

-

6dB

270W

10 @ 5A, 5V

20A

200°C (TJ)

Surface Mount

M111

MS1512

Microsemi Corporation

TRANS BIPO NPN M122

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 860MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 19.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M122
Supplier Device Package: M122

패키지: M122

재고7,984

25V

860MHz

-

10dB

19.4W

-

1.2A

200°C (TJ)

Chassis, Stud Mount

M122

2SC4808G0L

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SSMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
Gain: 11dB ~ 14dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3

패키지: SC-89, SOT-490

재고22,608

10V

6GHz

1.3dB ~ 2dB @ 800MHz

11dB ~ 14dB

125mW

50 @ 20mA, 8V

80mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3

MMBTH11

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

25V

650MHz

-

225mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFP 183 E7764

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고22,506

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

PRF947,115

NXP

TRANSISTOR NPN 10V 8.5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고95,382

10V

8.5GHz

1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

-

250mW

50 @ 5mA, 6V

50mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

MMBTH10

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고8,018,004

25V

650MHz

-

225mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

C5H2350N10X

Ampleon USA Inc.

C5H2350N10/DFN-4.5X4-6-1/TR7, 10

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2814-5-TB-E

onsemi

TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): -
Gain: 25dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

Request a Quote

-

320MHz

-

25dB

150mW

135 @ 1mA, 6V

30mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

BFP520FE6327

Infineon Technologies

LOW-NOISE SI TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: -

Request a Quote

3.5V

45GHz

0.95dB @ 1.8GHz

22.5dB

100mW

70 @ 20mA, 2V

40mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

PH1214-300M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,RADAR,300W,1.

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 90V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.75dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 21A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

90V

-

8.75dB

583W

-

21A

200°C (TJ)

Chassis Mount

2L-FLG

CP223-2N3866-WN

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

30V

500MHz

-

10dB

-

10 @ 50mA, 5V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die