페이지 35 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고3,536	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2SC5011-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고19,704	12V	6.5GHz	1.1dB @ 1GHz	13dB	150mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MS2203	Microsemi Corporation	TRANS RF BIPO 5W 300MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	패키지: M220	재고6,336	20V	1.09GHz	-	10.8dB ~ 12.3dB	5W	120 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M220	M220
NE68033-T1B-R44-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,552	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	80 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFU725F,115	NXP	TRANS NPN 20GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 70GHz Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz Gain: 10dB ~ 24dB Power - Max: 136mW DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	패키지: SOT-343F	재고4,608	2.8V	70GHz	0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz	10dB ~ 24dB	136mW	300 @ 10mA, 2V	40mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
NESG2107M33-T3-A	CEL	TRANS NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz Gain: 7dB ~ 10dB Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고77,796	5V	10GHz	0.9dB ~ 1.5dB @ 2GHz	7dB ~ 10dB	130mW	140 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE685M03-T1-A	CEL	TRANSISTOR NPN 2GHZ M03 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: M03	패키지: SOT-623F	재고4,336	5V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-623F	M03
NE97833-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,008	12V	5.5GHz	2dB @ 1GHz	10dB	200mW	20 @ 15mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MPSH10G	ON Semiconductor	TRANS NPN VHF/UHF SS 25V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,992	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFG520/XR,235	NXP	TRANS RF NPN 9GHZ 15V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고6,944	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SOT-143R	SOT-143R
BFG424W,115	NXP	TRANS NPN 10V 30MA SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Gain: 22dB Power - Max: 135mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고2,896	4.5V	25GHz	0.8dB ~ 1.2dB @ 900MHz ~ 2GHz	22dB	135mW	50 @ 25mA, 2V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
10502	Microsemi Corporation	TRANS BIPO 50V 500W 55SM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	패키지: 55SM	재고2,800	65V	-	-	8.5dB	1458W	20 @ 5A, 5V	40A	230°C (TJ)	Chassis Mount	55SM	55SM
MAPRST0912-50	M/A-Com Technology Solutions	TRANS NPN 50W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10.16dB ~ 10.25dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 5.3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,312	65V	-	-	10.16dB ~ 10.25dB	50W	-	5.3A	200°C (TJ)	Chassis Mount	-	-
SS9018GBU	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 30V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,080	15V	1.1GHz	-	-	400mW	72 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SD1274-01	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: - Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고6,704	16V	-	-	10dB	70W	20 @ 250mA, 5V	8A	-	Surface Mount	M113	M113
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 5V 1GHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: 4.5dBi Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고144,000	5V	4GHz	2.4dB @ 1GHz	4.5dBi	100mW	80 @ 5mA, 1V	60mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
BFU610F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz Gain: 13.5dB ~ 23.5dB Power - Max: 136mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V Current - Collector (Ic) (Max): 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	패키지: SOT-343F	재고27,318	5.5V	15GHz	0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz	13.5dB ~ 23.5dB	136mW	90 @ 1mA, 2V	10mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
BFR181WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 20MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고46,464	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	19dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
HFA3134IHZ96	Intersil	IC TRANS ARRAY NPN MATCH SOT23-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고142,788	9V	8.5GHz	2.4dB @ 1GHz	-	-	48 @ 10mA, 2V	26mA	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
CA3227M96	Intersil	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 85mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	8V	3GHz	-	-	85mW	40 @ 1mA, 6V	20mA	-	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
NESG340033-T1B-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.7dB @ 1GHz Gain: 12dB Power - Max: 480mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 15mA, 3.3V Current - Collector (Ic) (Max): 400mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MINIMOLD	패키지: -	Request a Quote	5.5V	10GHz	0.7dB @ 1GHz	12dB	480mW	200 @ 15mA, 3.3V	400mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MINIMOLD
PH3135-25S	MACOM Technology Solutions	TRANSISTOR,25W,3.1-3.5GHZ,2US,10 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 195W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	65V	3.5GHz	-	7.5dB	195W	-	3A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MRF429	MACOM Technology Solutions	TRANS RF NPN 50V 16A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 15dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: -	Request a Quote	50V	-	-	15dB	150W	10 @ 5A, 5V	16A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MS1019	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS1030	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRF1150MB	MACOM Technology Solutions	TRANS NPN 150W 906MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.8dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 332A-03 Supplier Device Package: 332A-03	패키지: -	Request a Quote	70V	-	-	9.8dB	150W	10 @ 5A, 5V	12A	-	Chassis Mount	332A-03	332A-03
PH1214-40M	MACOM Technology Solutions	TRANSISTOR,40W,40V,1.20-1.40GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 100W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	패키지: -	Request a Quote	70V	-	-	8.5dB	100W	-	3A	200°C (TJ)	Chassis Mount	2L-FLG	-
2SC5231C9-TL-E	onsemi	2SC5231 - RF SMALL SIGNAL BIPOLA Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: 3-SMCP	패키지: -	Request a Quote	10V	7GHz	1dB @ 1GHz	12dB	100mW	135 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	3-SMCP

JANTXV2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고3,536

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2SC5011-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고19,704

12V

6.5GHz

1.1dB @ 1GHz

13dB

150mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MS2203

Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB ~ 12.3dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

패키지: M220

재고6,336

20V

1.09GHz

-

10.8dB ~ 12.3dB

5W

120 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M220

NE68033-T1B-R44-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,552

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

80 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFU725F,115

NXP

TRANS NPN 20GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 70GHz
Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain: 10dB ~ 24dB
Power - Max: 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

패키지: SOT-343F

재고4,608

2.8V

70GHz

0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz

10dB ~ 24dB

136mW

300 @ 10mA, 2V

40mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

NESG2107M33-T3-A

CEL

TRANS NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
Gain: 7dB ~ 10dB
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고77,796

5V

10GHz

0.9dB ~ 1.5dB @ 2GHz

7dB ~ 10dB

130mW

140 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE685M03-T1-A

CEL

TRANSISTOR NPN 2GHZ M03

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: M03

패키지: SOT-623F

재고4,336

5V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-623F

M03

NE97833-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,008

12V

5.5GHz

2dB @ 1GHz

10dB

200mW

20 @ 15mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MPSH10G

ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,992

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFG520/XR,235

NXP

TRANS RF NPN 9GHZ 15V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고6,944

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SOT-143R

BFG424W,115

NXP

TRANS NPN 10V 30MA SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain: 22dB
Power - Max: 135mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고2,896

4.5V

25GHz

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

22dB

135mW

50 @ 25mA, 2V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

10502

Microsemi Corporation

TRANS BIPO 50V 500W 55SM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SM
Supplier Device Package: 55SM

패키지: 55SM

재고2,800

65V

-

8.5dB

1458W

20 @ 5A, 5V

40A

230°C (TJ)

Chassis Mount

55SM

MAPRST0912-50

M/A-Com Technology Solutions

TRANS NPN 50W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10.16dB ~ 10.25dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 5.3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,312

65V

-

10.16dB ~ 10.25dB

50W

-

5.3A

200°C (TJ)

Chassis Mount

-

SS9018GBU

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,080

15V

1.1GHz

-

400mW

72 @ 1mA, 5V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

SD1274-01

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고6,704

16V

-

10dB

70W

20 @ 250mA, 5V

8A

-

Surface Mount

M113

MT3S16U(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
Gain: 4.5dBi
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고144,000

5V

4GHz

2.4dB @ 1GHz

4.5dBi

100mW

80 @ 5mA, 1V

60mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

BFU610F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain: 13.5dB ~ 23.5dB
Power - Max: 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

패키지: SOT-343F

재고27,318

5.5V

15GHz

0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz

13.5dB ~ 23.5dB

136mW

90 @ 1mA, 2V

10mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

BFR181WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 20MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고46,464

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

19dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

HFA3134IHZ96

Intersil

IC TRANS ARRAY NPN MATCH SOT23-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V
Current - Collector (Ic) (Max): 26mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고142,788

9V

8.5GHz

2.4dB @ 1GHz

-

48 @ 10mA, 2V

26mA

150°C (TJ)

Surface Mount

SOT-23-6

CA3227M96

Intersil

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

8V

3GHz

-

85mW

40 @ 1mA, 6V

20mA

-

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

NESG340033-T1B-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 1GHz
Gain: 12dB
Power - Max: 480mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 15mA, 3.3V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MINIMOLD

패키지: -

Request a Quote

5.5V

10GHz

0.7dB @ 1GHz

12dB

480mW

200 @ 15mA, 3.3V

400mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MINIMOLD

PH3135-25S

MACOM Technology Solutions

TRANSISTOR,25W,3.1-3.5GHZ,2US,10

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 195W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

65V

3.5GHz

-

7.5dB

195W

-

3A

200°C (TJ)

Chassis Mount

2L-FLG

MRF429

MACOM Technology Solutions

TRANS RF NPN 50V 16A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 15dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: -

Request a Quote

50V

-

15dB

150W

10 @ 5A, 5V

16A

-

Chassis Mount

211-11, Style 2

MS1019

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MS1030

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MRF1150MB

MACOM Technology Solutions

TRANS NPN 150W 906MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.8dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03

패키지: -

Request a Quote

70V

-

9.8dB

150W

10 @ 5A, 5V

12A

-

Chassis Mount

332A-03

PH1214-40M

MACOM Technology Solutions

TRANSISTOR,40W,40V,1.20-1.40GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 100W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

패키지: -

Request a Quote

70V

-

8.5dB

100W

-

3A

200°C (TJ)

Chassis Mount

2L-FLG

-

2SC5231C9-TL-E

onsemi

2SC5231 - RF SMALL SIGNAL BIPOLA

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: 3-SMCP

패키지: -

Request a Quote

10V

7GHz

1dB @ 1GHz

12dB

100mW

135 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

3-SMCP