페이지 36 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR183WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 65MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고4,336	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	18.5dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
FH102A-TR-E	ON Semiconductor	TRANS NPN DUAL 10V 70MA MCP6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-MCP	패키지: 6-TSSOP, SC-88, SOT-363	재고6,224	10V	7GHz	1dB @ 1GHz	12dB	500mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-MCP
MSC2295-CT1	ON Semiconductor	TRANS NPN RF BIPO 20V SC-59 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고394,800	20V	150MHz	-	-	200mW	110 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
UPA812T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고5,552	10V	7GHz	1.4dB @ 1GHz	12dB	200mW	70 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KSC3123RMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz Gain: 20dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	20V	1.4GHz	3.8dB ~ 5.5dB @ 200MHz	20dB ~ 23dB	150mW	60 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
AT-41486-BLK	Broadcom Limited	TRANS SIL LOW NOISE BIPOLAR 86PL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 9dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고6,112	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	9dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
UPA810T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,952	12V	4.5GHz	1.2dB @ 1GHz	9dB	200mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NE94433-T1B	CEL	TRANS NPN OSC FT=2GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	15V	2GHz	-	-	150mW	50 @ 5mA, 10V	50mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE85619-T1	CEL	TRANS NPN 1GHZ SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz Gain: 6.5dB ~ 12.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고2,736	12V	4.5GHz	1.4dB ~ 2.2dB @ 1GHz ~ 2GHz	6.5dB ~ 12.5dB	100mW	80 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
BFR93A,215	NXP	TRANS NPN 35MA 12V 6GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,104	12V	6GHz	1.9dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFR520T,115	NXP	TRANS NPN 15V 9GHZ SOT-416 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고4,320	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	150mW	60 @ 20mA, 6V	70mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
BFG505/X,235	NXP	TRANS RF NPN 9GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,936	15V	9GHz	1.2dB ~ 1.9dB @ 900MHz ~ 2GHz	-	150mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BGR420H6327XTSA1	Infineon Technologies	TRANS RF NPN 13V 25MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 13V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz Gain: - Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 25mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고5,840	13V	-	1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz	-	120mW	-	25mA	-65°C ~ 150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP182WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고6,160	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR380L3E6327XTMA1	Infineon Technologies	TRANSISTOR RF NPN 6V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz Gain: 7.5dB ~ 16.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고4,080	9V	14GHz	0.5dB ~ 2.1dB @ 1.8GHz	7.5dB ~ 16.5dB	380mW	90 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
TAN350	Microsemi Corporation	TRANS RF BIPO 1450W 40A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.5dB Power - Max: 1450W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	패키지: 55ST	재고7,328	65V	960MHz ~ 1.215GHz	-	7dB ~ 7.5dB	1450W	10 @ 1A, 5V	40A	230°C (TJ)	Chassis Mount	55ST	55ST
TAN250A	Microsemi Corporation	TRANS RF BIPO 60V 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.2db ~ 7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	패키지: 55AW	재고4,208	60V	960MHz ~ 1.215GHz	-	6.2db ~ 7dB	575W	10 @ 1A, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
MPA201	Microsemi Corporation	TRANS RF BIPO 6W 300MA 55AU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AU Supplier Device Package: 55AU	패키지: 55AU	재고6,480	22V	2GHz	-	13dB	6W	20 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55AU	55AU
MCH4014-TL-H	ON Semiconductor	TRANS NPN 12V 30MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 18dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고3,248	12V	10GHz	1.2dB @ 1GHz	18dB	350mW	60 @ 5mA, 5V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
2SC5086-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고2,736	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
BFS17PE6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고211,728	15V	1.4GHz	3.5dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
MMBT5179	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고8,652	12V	2GHz	5dB @ 200MHz	15dB	225mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFR740L3RHE6327XTSA1	Infineon Technologies	RF TRANS NPN 4.7V 42GHZ TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: -	재고4,377	4.7V	42GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
2SC4226-A	CEL	RF TRANS NPN 12V 4.5GHZ SC70-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: -	Request a Quote	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
CM5160-PBFREE	Central Semiconductor Corp	RF TRANS PNP 40V 500MHZ TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	40V	500MHz	-	-	1W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
HFA3127MJ-883	Harris Corporation	DUAL MARKED (5962-9474901MEA) Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CERDIP	패키지: -	Request a Quote	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	-55°C ~ 125°C (TJ)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CERDIP
MS2210A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC1009A-T1B-AT	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2dB @ 1MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: -	Request a Quote	30V	250MHz	2dB @ 1MHz	-	150mW	60 @ 1mA, 6V	50mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59

BFR183WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 65MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고4,336

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

18.5dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

FH102A-TR-E

ON Semiconductor

TRANS NPN DUAL 10V 70MA MCP6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-MCP

패키지: 6-TSSOP, SC-88, SOT-363

재고6,224

10V

7GHz

1dB @ 1GHz

12dB

500mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-MCP

MSC2295-CT1

ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고394,800

20V

150MHz

-

200mW

110 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

UPA812T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고5,552

10V

7GHz

1.4dB @ 1GHz

12dB

200mW

70 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KSC3123RMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

20V

1.4GHz

3.8dB ~ 5.5dB @ 200MHz

20dB ~ 23dB

150mW

60 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

AT-41486-BLK

Broadcom Limited

TRANS SIL LOW NOISE BIPOLAR 86PL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고6,112

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

9dB ~ 18dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

UPA810T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,952

12V

4.5GHz

1.2dB @ 1GHz

9dB

200mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NE94433-T1B

CEL

TRANS NPN OSC FT=2GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

15V

2GHz

-

150mW

50 @ 5mA, 10V

50mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE85619-T1

CEL

TRANS NPN 1GHZ SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain: 6.5dB ~ 12.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고2,736

12V

4.5GHz

1.4dB ~ 2.2dB @ 1GHz ~ 2GHz

6.5dB ~ 12.5dB

100mW

80 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SOT-523

BFR93A,215

NXP

TRANS NPN 35MA 12V 6GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,104

12V

6GHz

1.9dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFR520T,115

NXP

TRANS NPN 15V 9GHZ SOT-416

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고4,320

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

150mW

60 @ 20mA, 6V

70mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

BFG505/X,235

NXP

TRANS RF NPN 9GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,936

15V

9GHz

1.2dB ~ 1.9dB @ 900MHz ~ 2GHz

-

150mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BGR420H6327XTSA1

Infineon Technologies

TRANS RF NPN 13V 25MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 13V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Gain: -
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고5,840

13V

-

1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz

-

120mW

-

25mA

-65°C ~ 150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP182WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고6,160

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR380L3E6327XTMA1

Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz
Gain: 7.5dB ~ 16.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고4,080

9V

14GHz

0.5dB ~ 2.1dB @ 1.8GHz

7.5dB ~ 16.5dB

380mW

90 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

TAN350

Microsemi Corporation

TRANS RF BIPO 1450W 40A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.5dB
Power - Max: 1450W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

패키지: 55ST

재고7,328

65V

960MHz ~ 1.215GHz

-

7dB ~ 7.5dB

1450W

10 @ 1A, 5V

40A

230°C (TJ)

Chassis Mount

55ST

TAN250A

Microsemi Corporation

TRANS RF BIPO 60V 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2db ~ 7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

패키지: 55AW

재고4,208

60V

960MHz ~ 1.215GHz

-

6.2db ~ 7dB

575W

10 @ 1A, 5V

30A

200°C (TJ)

Chassis Mount

55AW

MPA201

Microsemi Corporation

TRANS RF BIPO 6W 300MA 55AU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AU
Supplier Device Package: 55AU

패키지: 55AU

재고6,480

22V

2GHz

-

13dB

6W

20 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55AU

MCH4014-TL-H

ON Semiconductor

TRANS NPN 12V 30MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 18dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고3,248

12V

10GHz

1.2dB @ 1GHz

18dB

350mW

60 @ 5mA, 5V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

2SC5086-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고2,736

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

BFS17PE6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고211,728

15V

1.4GHz

3.5dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

MMBT5179

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고8,652

12V

2GHz

5dB @ 200MHz

15dB

225mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFR740L3RHE6327XTSA1

Infineon Technologies

RF TRANS NPN 4.7V 42GHZ TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: -

재고4,377

4.7V

42GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

2SC4226-A

CEL

RF TRANS NPN 12V 4.5GHZ SC70-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: -

Request a Quote

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

CM5160-PBFREE

Central Semiconductor Corp

RF TRANS PNP 40V 500MHZ TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

40V

500MHz

-

1W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

HFA3127MJ-883

Harris Corporation

DUAL MARKED (5962-9474901MEA)

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CERDIP

패키지: -

Request a Quote

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

-55°C ~ 125°C (TJ)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CERDIP

MS2210A

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC1009A-T1B-AT

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): 2dB @ 1MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: -

Request a Quote

30V

250MHz

2dB @ 1MHz

-

150mW

60 @ 1mA, 6V

50mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59