페이지 40 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR720L3RHE6327XTSA1	Infineon Technologies	TRANS RF NPN 4V 20MA TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24dB Power - Max: 80mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고4,384	4.7V	45GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24dB	80mW	160 @ 13mA, 3V	20mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고11,436	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2SC5454-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고217,320	6V	14.5GHz	1.5dB @ 2GHz	12dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC5754-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 20GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 735mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고452,136	5V	20GHz	-	6.5dB	735mW	40 @ 100mA, 3V	500mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
2SC5336-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고1,384,368	12V	6.5GHz	1.8dB @ 1GHz	12dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
PH3134-9L	M/A-Com Technology Solutions	TRANSISTOR 9W 36V 3.10-3.40GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 9W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,784	60V	-	-	8dB	9W	-	1.1A	200°C (TJ)	Chassis Mount	-	-
MS2206	Microsemi Corporation	TRANS RF BIPO 7.5W 1A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고4,496	20V	1.025GHz ~ 1.15GHz	-	10dB	7.5W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M115	M115
MZ0912B100Y,114	Ampleon USA Inc.	TRANSISTOR POWER NPN SOT443A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 6A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-443A Supplier Device Package: CDFM2	패키지: SOT-443A	재고6,160	20V	1.215GHz	-	7.6dB	290W	-	6A	200°C (TJ)	Surface Mount	SOT-443A	CDFM2
UPA812T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,696	10V	7GHz	1.4dB @ 1GHz	12dB	200mW	70 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NE68030-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.4dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고4,848	10V	10GHz	1.9dB @ 2GHz	9.4dB	150mW	50 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFQ31ATA	Diodes Incorporated	TRANSISTOR UHF/VHF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,000	15V	600MHz	6dB @ 60MHz	-	330mW	100 @ 3mA, 1V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
AT-41532-TR1	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고36,000	12V	-	1dB ~ 1.9dB @ 900MHz ~ 2.4GHz	9dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
BFR93A,235	NXP	TRANS NPN 12V 35MA 6GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,376	12V	6GHz	1.9dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG540/X,215	NXP	TRANS NPN 15V 9GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고2,672	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	400mW	60 @ 40mA, 8V	120mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFP196WNH6327XTSA1	Infineon Technologies	IC RF TRANS NPN SOT343-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB @ 900MHz Gain: 9.7dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고7,232	12V	7.5GHz	1.3dB @ 900MHz	9.7dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
AT-31011-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고2,976	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	11dB ~ 13dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC5536A-TL-H	ON Semiconductor	TRANS NPN BIPO 50MA 12V SSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 1.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 150MHz Gain: 16dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-81 Supplier Device Package: 3-SSFP	패키지: SC-81	재고480,000	12V	1.7GHz	1.8dB @ 150MHz	16dB	100mW	80 @ 3mA, 2V	50mA	150°C (TJ)	Surface Mount	SC-81	3-SSFP
BFU520AVL	NXP	TRANS RF NPN 12V 30MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 12.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,216	12V	10GHz	1dB @ 1.8GHz	12.5dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFS17NTA	Diodes Incorporated	TRANS RF NPN 3.2GHZ 11V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 11V Frequency - Transition: 3.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고30,000	11V	3.2GHz	-	-	330mW	56 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BFP650H6327XTSA1	Infineon Technologies	TRANS RF NPN 4V 150MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고94,956	4.5V	37GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	10.5dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BF240RL1	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4703-AZ	CEL	RF TRANS NPN 12V 6GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MT4S300U-TE85L-O-F	Toshiba Semiconductor and Storage	X34 PB-F RADIO-FREQUENCY SIGE HE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 26.5GHz Noise Figure (dB Typ @ f): 0.55dB @ 2GHz Gain: 16.9dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	패키지: -	Request a Quote	4V	26.5GHz	0.55dB @ 2GHz	16.9dB	250mW	200 @ 10mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	USQ
CP223-2N3866-CT	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	30V	500MHz	-	10dB	-	10 @ 50mA, 5V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2SC5676-T1-A	Renesas Electronics Corporation	NPN RF TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE237	NTE Electronics, Inc	RF TRANS NPN 60V 300MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 300MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	60V	300MHz	-	-	10W	10 @ 500mA, 5V	2A	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NESG2031M05-T1-A	Renesas Electronics Corporation	NESG2031 - NPN SIGE RF TRANSISTO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz Gain: 10dB ~ 17dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M05	패키지: -	Request a Quote	5V	25GHz	0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz	10dB ~ 17dB	175mW	130 @ 5mA, 2V	35mA	-	Surface Mount	SOT-343F	M05
12A01C-TB-E	Sanyo	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR720L3RHE6327XTSA1

Infineon Technologies

TRANS RF NPN 4V 20MA TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24dB
Power - Max: 80mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고4,384

4.7V

45GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24dB

80mW

160 @ 13mA, 3V

20mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고11,436

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2SC5454-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고217,320

6V

14.5GHz

1.5dB @ 2GHz

12dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC5754-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 20GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 735mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고452,136

5V

20GHz

-

6.5dB

735mW

40 @ 100mA, 3V

500mA

150°C (TJ)

Surface Mount

SOT-343F

2SC5336-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 12dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고1,384,368

12V

6.5GHz

1.8dB @ 1GHz

12dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

PH3134-9L

M/A-Com Technology Solutions

TRANSISTOR 9W 36V 3.10-3.40GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 9W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,784

60V

-

8dB

9W

-

1.1A

200°C (TJ)

Chassis Mount

-

MS2206

Microsemi Corporation

TRANS RF BIPO 7.5W 1A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고4,496

20V

1.025GHz ~ 1.15GHz

-

10dB

7.5W

20 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M115

MZ0912B100Y,114

Ampleon USA Inc.

TRANSISTOR POWER NPN SOT443A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 6A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-443A
Supplier Device Package: CDFM2

패키지: SOT-443A

재고6,160

20V

1.215GHz

-

7.6dB

290W

-

6A

200°C (TJ)

Surface Mount

SOT-443A

CDFM2

UPA812T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,696

10V

7GHz

1.4dB @ 1GHz

12dB

200mW

70 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NE68030-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.4dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고4,848

10V

10GHz

1.9dB @ 2GHz

9.4dB

150mW

50 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFQ31ATA

Diodes Incorporated

TRANSISTOR UHF/VHF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,000

15V

600MHz

6dB @ 60MHz

-

330mW

100 @ 3mA, 1V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

AT-41532-TR1

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고36,000

12V

-

1dB ~ 1.9dB @ 900MHz ~ 2.4GHz

9dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

BFR93A,235

NXP

TRANS NPN 12V 35MA 6GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,376

12V

6GHz

1.9dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG540/X,215

NXP

TRANS NPN 15V 9GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고2,672

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

400mW

60 @ 40mA, 8V

120mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFP196WNH6327XTSA1

Infineon Technologies

IC RF TRANS NPN SOT343-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Gain: 9.7dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고7,232

12V

7.5GHz

1.3dB @ 900MHz

9.7dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

AT-31011-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고2,976

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

11dB ~ 13dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC5536A-TL-H

ON Semiconductor

TRANS NPN BIPO 50MA 12V SSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Gain: 16dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP

패키지: SC-81

재고480,000

12V

1.7GHz

1.8dB @ 150MHz

16dB

100mW

80 @ 3mA, 2V

50mA

150°C (TJ)

Surface Mount

SC-81

3-SSFP

BFU520AVL

NXP

TRANS RF NPN 12V 30MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,216

12V

10GHz

1dB @ 1.8GHz

12.5dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFS17NTA

Diodes Incorporated

TRANS RF NPN 3.2GHZ 11V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 11V
Frequency - Transition: 3.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고30,000

11V

3.2GHz

-

330mW

56 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BFP650H6327XTSA1

Infineon Technologies

TRANS RF NPN 4V 150MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고94,956

4.5V

37GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

10.5dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BF240RL1

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC4703-AZ

CEL

RF TRANS NPN 12V 6GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MT4S300U-TE85L-O-F

Toshiba Semiconductor and Storage

X34 PB-F RADIO-FREQUENCY SIGE HE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 26.5GHz
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Gain: 16.9dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ

패키지: -

Request a Quote

4V

26.5GHz

0.55dB @ 2GHz

16.9dB

250mW

200 @ 10mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

USQ

CP223-2N3866-CT

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

30V

500MHz

-

10dB

-

10 @ 50mA, 5V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die

2SC5676-T1-A

Renesas Electronics Corporation

NPN RF TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE237

NTE Electronics, Inc

RF TRANS NPN 60V 300MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

60V

300MHz

-

10W

10 @ 500mA, 5V

2A

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NESG2031M05-T1-A

Renesas Electronics Corporation

NESG2031 - NPN SIGE RF TRANSISTO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain: 10dB ~ 17dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M05

패키지: -

Request a Quote

5V

25GHz

0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz

10dB ~ 17dB

175mW

130 @ 5mA, 2V

35mA

-

Surface Mount

SOT-343F

M05

12A01C-TB-E

Sanyo

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-