페이지 42 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MMBTH81_F080	Fairchild/ON Semiconductor	TRANSISTOR RF PNP SOT-23 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,328	-	-	-	-	-	-	-	-	-	-	-
MRF555GT	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,280	16V	470MHz	-	12.5dB	3W	50 @ 100mA, 5V	500mA	-	-	-	-
2SC4227-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고447,684	10V	7GHz	1.4dB @ 1GHz	12dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE68133-T1B-R33-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,712	10V	9GHz	1.2dB @ 1GHz	13dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PN5179_D27Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,760	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE85633L-A	CEL	TRANSISTOR NPN 1GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,176	12V	7GHz	1.4dB ~ 2dB @ 1GHz	9dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE696M01-A	CEL	TRANSISTOR NPN 2GHZ SOT-363 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.6dB @ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고4,832	6V	14GHz	1.6dB @ 2GHz	-	150mW	80 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KSC1730OTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,984	15V	1.1GHz	-	-	250mW	70 @ 5mA, 10V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF240_ND74Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 40V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,864	40V	1.1GHz	-	-	350mW	65 @ 1mA, 10V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS3563G	ON Semiconductor	TRANS NPN RF SS 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 6.5dB @ 60MHz Gain: 14dB @ 200MHz Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,320	12V	1.5GHz	6.5dB @ 60MHz	14dB @ 200MHz	350W	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
NE68030-T1	CEL	TRANS NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.9dB @ 1GHz ~ 4GHz Gain: 5.3dB ~ 12.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고2,928	10V	10GHz	1.5dB ~ 2.9dB @ 1GHz ~ 4GHz	5.3dB ~ 12.5dB	150mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
PH3135-65M	M/A-Com Technology Solutions	TRANSISTOR 65W 36V 3.10-3.50GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.23dB ~ 9.09dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 7.7A Operating Temperature: 200°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,100	65V	-	-	8.23dB ~ 9.09dB	65W	-	7.7A	200°C (TJ)	-	-	-
MS1004	Microsemi Corporation	TRANS RF BIPO 270W 20A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14.5dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M177 Supplier Device Package: M177	패키지: M177	재고6,848	55V	30MHz	-	14.5dB	330W	15 @ 10A, 6V	40A	200°C (TJ)	Chassis Mount	M177	M177
10A015	Microsemi Corporation	TRANS RF BIPO 6W 750MA 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 2.7GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: 55FT	재고5,120	24V	2.7GHz	-	9dB ~ 9.5dB	6W	20 @ 100mA, 5V	750mA	200°C (TJ)	Stud Mount	55FT	55FT
AT-31033-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 9dB ~ 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고4,432	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	9dB ~ 11dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MCH4020-TL-H	ON Semiconductor	TRANS BIPO NPN 150MA 8V MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17.5dB @ 1GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-MCPH	패키지: SC-82A, SOT-343	재고4,832	8V	16GHz	1.2dB @ 1GHz	17.5dB @ 1GHz	400mW	60 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	4-MCPH
MAX2602ESA+	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고4,272	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
BFP540FESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 5V 80MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고6,608	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	20dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
2SC5087YTE85LF	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	패키지: SC-61AA	재고6,112	12V	7GHz	1.1dB @ 1GHz	13dB	150mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
BFR 93A E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9.5dB ~ 14.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고28,236	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	9.5dB ~ 14.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2SC4618TLP	Rohm Semiconductor	TRANS RF NPN 25V 50MA SOT-416 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 300MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: SC-75, SOT-416	재고23,952	25V	300MHz	-	-	150mW	82 @ 1mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	EMT3
2SC3775-3-TB-E-ON	onsemi	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB @ 900MHz Gain: 14dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	12V	5GHz	1.5dB @ 900MHz	14dB	250mW	100 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
NESG340034-T1-A	Renesas Electronics Corporation	RF BIPOLAR TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1977-A	CEL	RF TRANS PNP 12V 8.5GHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	패키지: -	Request a Quote	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
2SA1978-A	CEL	RF TRANS PNP 12V 5.5GHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	패키지: -	Request a Quote	12V	5.5GHz	2dB @ 1GHz	10dB	200mW	20 @ 15mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
60168	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CPH6001-TL-E	onsemi	RF TRANS NPN 12V 6.7GHZ PCP Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2620QBTR-E	Renesas Electronics Corporation	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

MMBTH81_F080

Fairchild/ON Semiconductor

TRANSISTOR RF PNP SOT-23

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,328

-

MRF555GT

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,280

16V

470MHz

-

12.5dB

3W

50 @ 100mA, 5V

500mA

-

2SC4227-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고447,684

10V

7GHz

1.4dB @ 1GHz

12dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE68133-T1B-R33-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,712

10V

9GHz

1.2dB @ 1GHz

13dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PN5179_D27Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,760

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE85633L-A

CEL

TRANSISTOR NPN 1GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고2,176

12V

7GHz

1.4dB ~ 2dB @ 1GHz

9dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE696M01-A

CEL

TRANSISTOR NPN 2GHZ SOT-363

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고4,832

6V

14GHz

1.6dB @ 2GHz

-

150mW

80 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KSC1730OTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,984

15V

1.1GHz

-

250mW

70 @ 5mA, 10V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF240_ND74Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,864

40V

1.1GHz

-

350mW

65 @ 1mA, 10V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS3563G

ON Semiconductor

TRANS NPN RF SS 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
Gain: 14dB @ 200MHz
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,320

12V

1.5GHz

6.5dB @ 60MHz

14dB @ 200MHz

350W

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

NE68030-T1

CEL

TRANS NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
Gain: 5.3dB ~ 12.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고2,928

10V

10GHz

1.5dB ~ 2.9dB @ 1GHz ~ 4GHz

5.3dB ~ 12.5dB

150mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

PH3135-65M

M/A-Com Technology Solutions

TRANSISTOR 65W 36V 3.10-3.50GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.23dB ~ 9.09dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 7.7A
Operating Temperature: 200°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,100

65V

-

8.23dB ~ 9.09dB

65W

-

7.7A

200°C (TJ)

-

MS1004

Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14.5dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M177
Supplier Device Package: M177

패키지: M177

재고6,848

55V

30MHz

-

14.5dB

330W

15 @ 10A, 6V

40A

200°C (TJ)

Chassis Mount

M177

10A015

Microsemi Corporation

TRANS RF BIPO 6W 750MA 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 2.7GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: 55FT

재고5,120

24V

2.7GHz

-

9dB ~ 9.5dB

6W

20 @ 100mA, 5V

750mA

200°C (TJ)

Stud Mount

55FT

AT-31033-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 9dB ~ 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고4,432

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

9dB ~ 11dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MCH4020-TL-H

ON Semiconductor

TRANS BIPO NPN 150MA 8V MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17.5dB @ 1GHz
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-MCPH

패키지: SC-82A, SOT-343

재고4,832

8V

16GHz

1.2dB @ 1GHz

17.5dB @ 1GHz

400mW

60 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

4-MCPH

MAX2602ESA+

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고4,272

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

BFP540FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 5V 80MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고6,608

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

20dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

2SC5087YTE85LF

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

패키지: SC-61AA

재고6,112

12V

7GHz

1.1dB @ 1GHz

13dB

150mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

BFR 93A E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고28,236

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

9.5dB ~ 14.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2SC4618TLP

Rohm Semiconductor

TRANS RF NPN 25V 50MA SOT-416

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: SC-75, SOT-416

재고23,952

25V

300MHz

-

150mW

82 @ 1mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

EMT3

2SC3775-3-TB-E-ON

onsemi

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
Gain: 14dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

Request a Quote

12V

5GHz

1.5dB @ 900MHz

14dB

250mW

100 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

NESG340034-T1-A

Renesas Electronics Corporation

RF BIPOLAR TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SA1977-A

CEL

RF TRANS PNP 12V 8.5GHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

패키지: -

Request a Quote

12V

8.5GHz

1.5dB @ 1GHz

12dB

200mW

20 @ 20mA, 8V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2SA1978-A

CEL

RF TRANS PNP 12V 5.5GHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

패키지: -

Request a Quote

12V

5.5GHz

2dB @ 1GHz

10dB

200mW

20 @ 15mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

60168

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CPH6001-TL-E

onsemi

RF TRANS NPN 12V 6.7GHZ PCP

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2620QBTR-E

Renesas Electronics Corporation

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-