페이지 41 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFG135AE6327XT	Infineon Technologies	TRANS NPN RF 15V 150MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9dB ~ 14dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고2,768	15V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	9dB ~ 14dB	1W	80 @ 100mA, 8V	150mA	-	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
2SC5508-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 17dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고6,458,508	3.3V	25GHz	1.1dB @ 2GHz	17dB	115mW	50 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
MS2205	Microsemi Corporation	TRANS RF BIPO 21.9W 1A M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 21.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	패키지: M105	재고5,584	45V	1.025GHz ~ 1.15GHz	-	9.5dB	21.9W	10 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M105	M105
LM3046MX	Texas Instruments	IC TRANSISTOR ARRAY 14-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.25dB @ 1kHz Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고21,684	15V	-	3.25dB @ 1kHz	-	750mW	40 @ 1mA, 3V	50mA	-40°C ~ 85°C (TA)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
MPSH17	Fairchild/ON Semiconductor	TRANS NPN 15V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고36,000	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
UPA802T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고7,440	10V	7GHz	1.4dB @ 1GHz	12dB	200mW	70 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NE856M02-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고5,680	12V	6.5GHz	1.1dB @ 1GHz	12dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NE68819-A	CEL	TRANSISTOR NPN 2GHZ MINIMOLD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: 3-SuperMiniMold (19)	패키지: SOT-523	재고4,672	6V	5GHz	1.7dB ~ 2.5dB @ 2GHz	-	125mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	SOT-523	3-SuperMiniMold (19)
NE94430-T1-A	CEL	TRANS NPN OSC FT=2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고7,424	15V	2GHz	-	-	150mW	40 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
MMBTH34	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고828,000	40V	500MHz	-	-	225mW	15 @ 20mA, 2V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
SD1728	STMicroelectronics	TRANSISTOR NPN RF HF SSB M177 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 15dB ~ 17dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M177 Supplier Device Package: M177	패키지: M177	재고3,392	55V	-	-	15dB ~ 17dB	330W	23 @ 10A, 6V	40A	200°C (TJ)	Surface Mount	M177	M177
MPSH17G	ON Semiconductor	TRANS NPN RF SS 15V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고57,564	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFG97,135	NXP	TRANS NPN 15V 100MA 5GHZ SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고4,960	15V	5.5GHz	-	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
UTV8100B	Microsemi Corporation	TRANS RF BIPO 290W 15A 55RT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55RT Supplier Device Package: 55RT	패키지: 55RT	재고3,424	60V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	290W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55RT	55RT
MSC1450M	Microsemi Corporation	TRANS RF BIPO 910W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	패키지: M216	재고5,504	65V	1.09GHz	-	7dB	910W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
AT-32063-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 12.5dB ~ 14.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고4,352	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	12.5dB ~ 14.5dB	150mW	50 @ 5mA, 2.7V	32mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MRF327	M/A-Com Technology Solutions	TRANS RF NPN 33V 9A 316-01 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 316-01 Supplier Device Package: 316-01, STYLE 1	패키지: 316-01	재고4,352	33V	-	-	9dB	80W	20 @ 4A, 5V	9A	-	Chassis Mount	316-01	316-01, STYLE 1
BFU520XAR	NXP	TRANS RF NPN 12V 30MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Gain: 20dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고6,480	12V	10.5GHz	0.7dB @ 900MHz	20dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFR 181 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고27,678	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	18.5dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFP196E6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고132,432	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16.5dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
2SC3583-A	CEL	RF TRANS NPN 10V 9GHZ SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	10V	9GHz	1.2dB @ 1GHz	15dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
HFA3127MJR4598	Harris Corporation	ULTRA-HIGH FREQUENCY TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC3357-A	CEL	RF TRANS NPN 12V 6.5GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 9dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	12V	6.5GHz	1.8dB @ 1GHz	9dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC5753-A	CEL	RF TRANS NPN 6V 12GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 13.5dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: -	패키지: -	Request a Quote	6V	12GHz	1.7dB @ 2GHz	13.5dB	205mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-343F	-
2SC3775-3-TB-E	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB @ 900MHz Gain: 14dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	12V	5GHz	1.5dB @ 900MHz	14dB	250mW	60 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
48042	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4454Q-AC	onsemi	RF NPN 0.2A Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BFP490E6327	Infineon Technologies	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 17.5GHz Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz Gain: 8.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 3V Current - Collector (Ic) (Max): 600mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	패키지: -	Request a Quote	4.5V	17.5GHz	3.3dB @ 1.8GHz	8.5dB	1W	50 @ 200mA, 3V	600mA	150°C (TJ)	Surface Mount	SC-80	PG-SCD80-2

BFG135AE6327XT

Infineon Technologies

TRANS NPN RF 15V 150MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 9dB ~ 14dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고2,768

15V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

9dB ~ 14dB

1W

80 @ 100mA, 8V

150mA

-

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

2SC5508-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 17dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고6,458,508

3.3V

25GHz

1.1dB @ 2GHz

17dB

115mW

50 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

MS2205

Microsemi Corporation

TRANS RF BIPO 21.9W 1A M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 21.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

패키지: M105

재고5,584

45V

1.025GHz ~ 1.15GHz

-

9.5dB

21.9W

10 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M105

LM3046MX

Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고21,684

15V

-

3.25dB @ 1kHz

-

750mW

40 @ 1mA, 3V

50mA

-40°C ~ 85°C (TA)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

MPSH17

Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고36,000

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

UPA802T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고7,440

10V

7GHz

1.4dB @ 1GHz

12dB

200mW

70 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NE856M02-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 12dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고5,680

12V

6.5GHz

1.1dB @ 1GHz

12dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NE68819-A

CEL

TRANSISTOR NPN 2GHZ MINIMOLD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: 3-SuperMiniMold (19)

패키지: SOT-523

재고4,672

6V

5GHz

1.7dB ~ 2.5dB @ 2GHz

-

125mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

SOT-523

3-SuperMiniMold (19)

NE94430-T1-A

CEL

TRANS NPN OSC FT=2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고7,424

15V

2GHz

-

150mW

40 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

MMBTH34

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고828,000

40V

500MHz

-

225mW

15 @ 20mA, 2V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

SD1728

STMicroelectronics

TRANSISTOR NPN RF HF SSB M177

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 15dB ~ 17dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 10A, 6V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M177
Supplier Device Package: M177

패키지: M177

재고3,392

55V

-

15dB ~ 17dB

330W

23 @ 10A, 6V

40A

200°C (TJ)

Surface Mount

M177

MPSH17G

ON Semiconductor

TRANS NPN RF SS 15V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고57,564

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFG97,135

NXP

TRANS NPN 15V 100MA 5GHZ SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고4,960

15V

5.5GHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

UTV8100B

Microsemi Corporation

TRANS RF BIPO 290W 15A 55RT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55RT
Supplier Device Package: 55RT

패키지: 55RT

재고3,424

60V

470MHz ~ 860MHz

-

8.5dB ~ 9.5dB

290W

20 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55RT

MSC1450M

Microsemi Corporation

TRANS RF BIPO 910W 28A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 910W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

패키지: M216

재고5,504

65V

1.09GHz

-

7dB

910W

15 @ 1A, 5V

28A

250°C (TJ)

Chassis Mount

M216

AT-32063-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고4,352

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

12.5dB ~ 14.5dB

150mW

50 @ 5mA, 2.7V

32mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MRF327

M/A-Com Technology Solutions

TRANS RF NPN 33V 9A 316-01

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 316-01
Supplier Device Package: 316-01, STYLE 1

패키지: 316-01

재고4,352

33V

-

9dB

80W

20 @ 4A, 5V

9A

-

Chassis Mount

316-01

316-01, STYLE 1

BFU520XAR

NXP

TRANS RF NPN 12V 30MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고6,480

12V

10.5GHz

0.7dB @ 900MHz

20dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFR 181 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고27,678

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

18.5dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFP196E6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고132,432

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16.5dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

2SC3583-A

CEL

RF TRANS NPN 10V 9GHZ SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

10V

9GHz

1.2dB @ 1GHz

15dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

HFA3127MJR4598

Harris Corporation

ULTRA-HIGH FREQUENCY TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC3357-A

CEL

RF TRANS NPN 12V 6.5GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 9dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

12V

6.5GHz

1.8dB @ 1GHz

9dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC5753-A

CEL

RF TRANS NPN 6V 12GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13.5dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: -

패키지: -

Request a Quote

6V

12GHz

1.7dB @ 2GHz

13.5dB

205mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-343F

-

2SC3775-3-TB-E

Sanyo

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
Gain: 14dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

Request a Quote

12V

5GHz

1.5dB @ 900MHz

14dB

250mW

60 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

48042

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC4454Q-AC

onsemi

RF NPN 0.2A

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BFP490E6327

Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 17.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
Gain: 8.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 3V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

패키지: -

Request a Quote

4.5V

17.5GHz

3.3dB @ 1.8GHz

8.5dB

1W

50 @ 200mA, 3V

600mA

150°C (TJ)

Surface Mount

SC-80

PG-SCD80-2