페이지 52 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 183T E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 19.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고5,808	12V	8GHz	1.2dB ~ 2dB @ 900MHz ~ 1.8GHz	19.5dB	250mW	50 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
MRF8372R1	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고304,092	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427GR1	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,368	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC5501A-4-TR-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF MCP4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 13dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-MCP	패키지: SC-82A, SOT-343	재고3,472	10V	7GHz	1dB @ 1GHz	13dB	500mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	4-MCP
AT-41586-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고3,216	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
UPA895TS-T3-A	CEL	TRANSISTOR NPN DUAL 6-SMINI Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-Super Lead-Less MiniMold	패키지: 6-SMD, Flat Leads	재고120,000	5.5V	6.5GHz	1.9dB ~ 2.5dB @ 2GHz	-	130mW	100 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-Super Lead-Less MiniMold
AT-41533-TR1	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고85,500	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
AT-32033-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고685,440	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PRF949,115	NXP	TRANSISTOR NPN 10V 9GHZ SOT416 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고7,120	10V	9GHz	1.5dB ~ 2.5dB @ 1GHz	-	150mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
BFG97,115	NXP	TRANS NPN 15V 5.5GHZ SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,488	15V	5.5GHz	-	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR540,215	NXP	TRANS NPN 120MA 15V 9GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,800	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG10,215	NXP	TRANS RF NPN 2GHZ 8V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고5,248	8V	1.9GHz	-	7dB	400mW	25 @ 50mA, 5V	250mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
TAN500	Microsemi Corporation	TRANS RF BIPO 2500W 50A 55ST-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 2500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	패키지: 55ST	재고5,792	75V	960MHz ~ 1.215GHz	-	9dB	2500W	20 @ 1A, 5V	50A	200°C (TJ)	Chassis Mount	55ST	55ST
BFP720H6327XTSA1	Infineon Technologies	TRANS RF NPN 45GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고7,552	4.7V	45GHz	0.4dB ~ 0.95dB @ 150MHz ~ 10GHz	10.5dB ~ 28.5dB	100mW	160 @ 13mA, 3V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFR840L3RHESDE6327XTSA1	Infineon Technologies	TRANS RF BIPO NPN 35MA TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: 75GHz Noise Figure (dB Typ @ f): 0.5dB @ 450MHz Gain: 27dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: TSLP-3-9	패키지: SC-101, SOT-883	재고4,912	2.6V	75GHz	0.5dB @ 450MHz	27dB	75mW	150 @ 10mA, 1.8V	35mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	TSLP-3-9
KSC1674YBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고57,534	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFP760H6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN AMP SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Gain: 16.5dB ~ 29dB Power - Max: 240mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고22,542	4V	45GHz	0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz	16.5dB ~ 29dB	240mW	160 @ 35mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2N4427	Central Semiconductor Corp	TRANS NPN 20V 0.4A TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고61,800	20V	500MHz	-	10dB	1W	10 @ 100mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MSC80806	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4308TZ-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	20V	2.5GHz	-	-	600mW	50 @ 50mA, 5V	300mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SC3775-4-TB-E-ON	onsemi	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB @ 900MHz Gain: 14dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	12V	5GHz	1.5dB @ 900MHz	14dB	250mW	100 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
UMIL3B	Microsemi Corporation	RF TRANS 30V 400MHZ 55FT Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 11W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V Current - Collector (Ic) (Max): 700mA Operating Temperature: 150°C Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: -	Request a Quote	30V	225MHz ~ 400MHz	-	13dB	11W	10 @ 100A, 5V	700mA	150°C	Stud Mount	55FT	55FT
2SC5336-AZ	CEL	RF TRANS NPN 12V 6.5GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	패키지: -	Request a Quote	12V	6.5GHz	1.8dB @ 1GHz	12dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	-
MMST918T146	Rohm Semiconductor	TRANS GP BJT NPN 15V 50A 3-PIN S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: -	Request a Quote	15V	600MHz	6dB @ 60MHz	15dB	200mW	20 @ 3mA, 1V	50A	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
MT3S113-TE85L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 12.5GHZ SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 11.8dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: -	재고8,601	5.3V	12.5GHz	1.45dB @ 1GHz	11.8dB	800mW	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
NTE295	NTE Electronics, Inc	RF TRANS NPN 75V 250MHZ TO126 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	75V	250MHz	-	-	750mW	60 @ 500mA, 5V	1A	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2SC4093-A	CEL	RF TRANS NPN 12V 7GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	패키지: -	Request a Quote	12V	7GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
MPSH10-AP	Micro Commercial Co	TRANSISTOR TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92

BFR 183T E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 19.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고5,808

12V

8GHz

1.2dB ~ 2dB @ 900MHz ~ 1.8GHz

19.5dB

250mW

50 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

MRF8372R1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고304,092

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427GR1

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,368

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC5501A-4-TR-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 13dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-MCP

패키지: SC-82A, SOT-343

재고3,472

10V

7GHz

1dB @ 1GHz

13dB

500mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

4-MCP

AT-41586-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 8dB ~ 17dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고3,216

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

8dB ~ 17dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

UPA895TS-T3-A

CEL

TRANSISTOR NPN DUAL 6-SMINI

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-Super Lead-Less MiniMold

패키지: 6-SMD, Flat Leads

재고120,000

5.5V

6.5GHz

1.9dB ~ 2.5dB @ 2GHz

-

130mW

100 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-Super Lead-Less MiniMold

AT-41533-TR1

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고85,500

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

AT-32033-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고685,440

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PRF949,115

NXP

TRANSISTOR NPN 10V 9GHZ SOT416

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고7,120

10V

9GHz

1.5dB ~ 2.5dB @ 1GHz

-

150mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

BFG97,115

NXP

TRANS NPN 15V 5.5GHZ SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,488

15V

5.5GHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR540,215

NXP

TRANS NPN 120MA 15V 9GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,800

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG10,215

NXP

TRANS RF NPN 2GHZ 8V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고5,248

8V

1.9GHz

-

7dB

400mW

25 @ 50mA, 5V

250mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

TAN500

Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 2500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

패키지: 55ST

재고5,792

75V

960MHz ~ 1.215GHz

-

9dB

2500W

20 @ 1A, 5V

50A

200°C (TJ)

Chassis Mount

55ST

BFP720H6327XTSA1

Infineon Technologies

TRANS RF NPN 45GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
Gain: 10.5dB ~ 28.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고7,552

4.7V

45GHz

0.4dB ~ 0.95dB @ 150MHz ~ 10GHz

10.5dB ~ 28.5dB

100mW

160 @ 13mA, 3V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFR840L3RHESDE6327XTSA1

Infineon Technologies

TRANS RF BIPO NPN 35MA TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Gain: 27dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: TSLP-3-9

패키지: SC-101, SOT-883

재고4,912

2.6V

75GHz

0.5dB @ 450MHz

27dB

75mW

150 @ 10mA, 1.8V

35mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

TSLP-3-9

KSC1674YBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고57,534

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFP760H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고22,542

4V

45GHz

0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz

16.5dB ~ 29dB

240mW

160 @ 35mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2N4427

Central Semiconductor Corp

TRANS NPN 20V 0.4A TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고61,800

20V

500MHz

-

10dB

1W

10 @ 100mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MSC80806

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC4308TZ-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

20V

2.5GHz

-

600mW

50 @ 50mA, 5V

300mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2SC3775-4-TB-E-ON

onsemi

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
Gain: 14dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

Request a Quote

12V

5GHz

1.5dB @ 900MHz

14dB

250mW

100 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

UMIL3B

Microsemi Corporation

RF TRANS 30V 400MHZ 55FT

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 11W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
Current - Collector (Ic) (Max): 700mA
Operating Temperature: 150°C
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: -

Request a Quote

30V

225MHz ~ 400MHz

-

13dB

11W

10 @ 100A, 5V

700mA

150°C

Stud Mount

55FT

2SC5336-AZ

CEL

RF TRANS NPN 12V 6.5GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 12dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: -

패키지: -

Request a Quote

12V

6.5GHz

1.8dB @ 1GHz

12dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

-

MMST918T146

Rohm Semiconductor

TRANS GP BJT NPN 15V 50A 3-PIN S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: -

Request a Quote

15V

600MHz

6dB @ 60MHz

15dB

200mW

20 @ 3mA, 1V

50A

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

MT3S113-TE85L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 11.8dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: -

재고8,601

5.3V

12.5GHz

1.45dB @ 1GHz

11.8dB

800mW

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

NTE295

NTE Electronics, Inc

RF TRANS NPN 75V 250MHZ TO126

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

Request a Quote

75V

250MHz

-

750mW

60 @ 500mA, 5V

1A

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2SC4093-A

CEL

RF TRANS NPN 12V 7GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

패키지: -

Request a Quote

12V

7GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

MPSH10-AP

Micro Commercial Co

TRANSISTOR TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92