페이지 51 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 813
Language Translation

* Please refer to the English Version as our Official Version.

트랜지스터 - 양극(BJT) - RF

기록 1,633
페이지  51/59
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 740L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 4V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
패키지: SC-101, SOT-883
재고2,304
4.7V
42GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFR 182T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고6,528
12V
8GHz
1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
20dB
250mW
50 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFS540,115
NXP

TRANS RF NPN 15V 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
패키지: SC-70, SOT-323
재고6,848
15V
9GHz
1.3dB ~ 1.7dB @ 9MHz
-
500mW
100 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
NE85633-R23-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고6,928
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFG540/XR,215
NXP

TRANS NPN 15V 9GHZ SOT143B REV

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고2,128
15V
9GHz
1.3dB ~ 2.4dB @ 900MHz
-
400mW
100 @ 40mA, 8V
120mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
hot MRF904
Microsemi Corporation

TRANS NPN 15V 30MA TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
  • Gain: 6.5dB ~ 10.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
패키지: TO-206AF, TO-72-4 Metal Can
재고12,960
15V
4GHz
1.5dB @ 450MHz
6.5dB ~ 10.5dB
200mW
30 @ 5mA, 5V
30mA
200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
BFG590,215
NXP

TRANS NPN 15V 200MA SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고7,632
15V
5GHz
-
-
400mW
60 @ 70mA, 8V
200mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
NESG2030M04-A
CEL

TRANS NPN 2GHZ SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.3V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
패키지: SOT-343F
재고3,408
2.3V
60GHz
0.9dB ~ 1.1dB @ 2GHz
16dB
80mW
200 @ 5mA, 2V
35mA
150°C (TJ)
Surface Mount
SOT-343F
M04
NE85619-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
패키지: SOT-523
재고5,328
12V
4.5GHz
1.2dB @ 1GHz
9dB
100mW
80 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
NE681M03-A
CEL

TRANSISTOR NPN 1GHZ M03

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: M03
패키지: SOT-623F
재고2,448
10V
7GHz
1.4dB ~ 2.7dB @ 1GHz
-
125mW
80 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-623F
M03
hot KSC1674COBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고10,116
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF494_D74Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,824
20V
-
-
-
350mW
67 @ 1mA, 10V
30mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SC39320TL
Panasonic Electronic Components

TRANS NPN HF AMP 20VCEO SMINI 3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
패키지: SC-70, SOT-323
재고3,296
20V
1.6GHz
-
20dB
150mW
800 @ 2mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
hot UPA810T-T1
CEL

TRANS NPN HF FT=4.5GHZ 6SMT

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.5dB @ 1GHz
  • Gain: 7dB ~ 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
패키지: 6-TSSOP, SC-88, SOT-363
재고259,824
12V
4.5GHz
1.2dB ~ 2.5dB @ 1GHz
7dB ~ 9dB
200mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
BFS17,235
NXP

TRANS NPN 15V 25MA 1GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고6,592
15V
1GHz
4.5dB @ 500MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFM520,115
NXP

TRANS NPN DUAL 70MA 8V 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고7,584
8V
9GHz
1.2dB ~ 2.1dB @ 900MHz
-
1W
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
BFQ67W,115
NXP

TRANS NPN 10V 20MA 8GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
패키지: SC-70, SOT-323
재고3,520
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
1214-300
Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
패키지: 55KT
재고4,368
50V
1.2GHz ~ 1.4GHz
-
7dB
88W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
55KT
55KT
UTV005
Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
패키지: 55FT
재고7,296
24V
470MHz ~ 860MHz
-
11dB
8W
20 @ 100mA, 5V
750mA
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
MRF586G
Microsemi Corporation

TRANS BIPO NPN TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 17V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
패키지: TO-205AD, TO-39-3 Metal Can
재고4,208
17V
3GHz
-
13.5dB
1W
40 @ 50mA, 5V
200mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot AT-32033-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 11dB ~ 12.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고7,584
5.5V
-
1dB ~ 1.3dB @ 900MHz
11dB ~ 12.5dB
200mW
70 @ 2mA, 2.7V
32mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2N3866
Central Semiconductor Corp

TRANS RF NPN 30V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
패키지: TO-205AD, TO-39-3 Metal Can
재고32,508
30V
500MHz
-
-
5W
10 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BFQ18A,115
NXP

TRANS NPN 18V 150MA SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고14,028
18V
4GHz
-
-
1W
25 @ 100mA, 10V
150mA
175°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
NESG270034-T1-AZ
CEL

TRANSISTOR NPN 25V 3-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
패키지: -
Request a Quote
9.2V
-
-
-
1.9W
80 @ 100mA, 3V
750mA
-
Surface Mount
TO-243AA
3-PowerMiniMold
4MP10CH-TL-E
onsemi

BIP NPN 0.1A 200V

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
패키지: -
Request a Quote
200V
400MHz
-
-
600mW
60 @ 10mA, 10V
100mA
-
Surface Mount
SC-96
3-CPH
MS1006
Microsemi Corporation

RF TRANS NPN 55V 30MHZ M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 127W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 3.25A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
패키지: -
Request a Quote
55V
30MHz
-
14dB
127W
19 @ 1.4A, 6V
3.25A
200°C
Stud Mount
M135
M135
NTE15
NTE Electronics, Inc

RF TRANS NPN 19V 1.1GHZ 3SIP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 19V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SIP
패키지: -
Request a Quote
19V
1.1GHz
-
-
300mW
39 @ 5mA, 10V
50mA
125°C (TJ)
Through Hole
3-SIP
3-SIP
NTE77
NTE Electronics, Inc

RF TRANS NPN 30V 1.8GHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 1.8GHz
  • Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz
  • Gain: 7.2dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
패키지: -
Request a Quote
30V
1.8GHz
2.7dB ~ 7dB @ 200MHz ~ 216MHz
7.2dB
3.5W
30 @ 50mA, 15V
400mA
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39