페이지 51 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 740L3 E6327	Infineon Technologies	TRANSISTOR RF NPN 4V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고2,304	4.7V	42GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFR 182T E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고6,528	12V	8GHz	1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz	20dB	250mW	50 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
BFS540,115	NXP	TRANS RF NPN 15V 9GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고6,848	15V	9GHz	1.3dB ~ 1.7dB @ 9MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
NE85633-R23-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고6,928	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFG540/XR,215	NXP	TRANS NPN 15V 9GHZ SOT143B REV Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고2,128	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	400mW	100 @ 40mA, 8V	120mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
MRF904	Microsemi Corporation	TRANS NPN 15V 30MA TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Gain: 6.5dB ~ 10.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고12,960	15V	4GHz	1.5dB @ 450MHz	6.5dB ~ 10.5dB	200mW	30 @ 5mA, 5V	30mA	200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
BFG590,215	NXP	TRANS NPN 15V 200MA SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,632	15V	5GHz	-	-	400mW	60 @ 70mA, 8V	200mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
NESG2030M04-A	CEL	TRANS NPN 2GHZ SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.3V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz Gain: 16dB Power - Max: 80mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	패키지: SOT-343F	재고3,408	2.3V	60GHz	0.9dB ~ 1.1dB @ 2GHz	16dB	80mW	200 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	M04
NE85619-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고5,328	12V	4.5GHz	1.2dB @ 1GHz	9dB	100mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
NE681M03-A	CEL	TRANSISTOR NPN 1GHZ M03 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: M03	패키지: SOT-623F	재고2,448	10V	7GHz	1.4dB ~ 2.7dB @ 1GHz	-	125mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-623F	M03
KSC1674COBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고10,116	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF494_D74Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 20V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,824	20V	-	-	-	350mW	67 @ 1mA, 10V	30mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SC39320TL	Panasonic Electronic Components	TRANS NPN HF AMP 20VCEO SMINI 3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고3,296	20V	1.6GHz	-	20dB	150mW	800 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
UPA810T-T1	CEL	TRANS NPN HF FT=4.5GHZ 6SMT Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.5dB @ 1GHz Gain: 7dB ~ 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	패키지: 6-TSSOP, SC-88, SOT-363	재고259,824	12V	4.5GHz	1.2dB ~ 2.5dB @ 1GHz	7dB ~ 9dB	200mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
BFS17,235	NXP	TRANS NPN 15V 25MA 1GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,592	15V	1GHz	4.5dB @ 500MHz	-	300mW	25 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFM520,115	NXP	TRANS NPN DUAL 70MA 8V 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고7,584	8V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	1W	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
BFQ67W,115	NXP	TRANS NPN 10V 20MA 8GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,520	10V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
1214-300	Microsemi Corporation	TRANS RF BIPO 88W 4A 55KT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	패키지: 55KT	재고4,368	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55KT	55KT
UTV005	Microsemi Corporation	TRANS RF BIPO 8W 750MA 55FT-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: 55FT	재고7,296	24V	470MHz ~ 860MHz	-	11dB	8W	20 @ 100mA, 5V	750mA	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
MRF586G	Microsemi Corporation	TRANS BIPO NPN TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고4,208	17V	3GHz	-	13.5dB	1W	40 @ 50mA, 5V	200mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
AT-32033-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,584	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N3866	Central Semiconductor Corp	TRANS RF NPN 30V 400MA TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고32,508	30V	500MHz	-	-	5W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFQ18A,115	NXP	TRANS NPN 18V 150MA SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고14,028	18V	4GHz	-	-	1W	25 @ 100mA, 10V	150mA	175°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
NESG270034-T1-AZ	CEL	TRANSISTOR NPN 25V 3-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9.2V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V Current - Collector (Ic) (Max): 750mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: 3-PowerMiniMold	패키지: -	Request a Quote	9.2V	-	-	-	1.9W	80 @ 100mA, 3V	750mA	-	Surface Mount	TO-243AA	3-PowerMiniMold
4MP10CH-TL-E	onsemi	BIP NPN 0.1A 200V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 200V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	패키지: -	Request a Quote	200V	400MHz	-	-	600mW	60 @ 10mA, 10V	100mA	-	Surface Mount	SC-96	3-CPH
MS1006	Microsemi Corporation	RF TRANS NPN 55V 30MHZ M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 127W DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V Current - Collector (Ic) (Max): 3.25A Operating Temperature: 200°C Mounting Type: Stud Mount Package / Case: M135 Supplier Device Package: M135	패키지: -	Request a Quote	55V	30MHz	-	14dB	127W	19 @ 1.4A, 6V	3.25A	200°C	Stud Mount	M135	M135
NTE15	NTE Electronics, Inc	RF TRANS NPN 19V 1.1GHZ 3SIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 19V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: 3-SIP	패키지: -	Request a Quote	19V	1.1GHz	-	-	300mW	39 @ 5mA, 10V	50mA	125°C (TJ)	Through Hole	3-SIP	3-SIP
NTE77	NTE Electronics, Inc	RF TRANS NPN 30V 1.8GHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 1.8GHz Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz Gain: 7.2dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	1.8GHz	2.7dB ~ 7dB @ 200MHz ~ 216MHz	7.2dB	3.5W	30 @ 50mA, 15V	400mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39

BFR 740L3 E6327

Infineon Technologies

TRANSISTOR RF NPN 4V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고2,304

4.7V

42GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFR 182T E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고6,528

12V

8GHz

1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz

20dB

250mW

50 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

BFS540,115

NXP

TRANS RF NPN 15V 9GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고6,848

15V

9GHz

1.3dB ~ 1.7dB @ 9MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

NE85633-R23-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고6,928

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFG540/XR,215

NXP

TRANS NPN 15V 9GHZ SOT143B REV

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고2,128

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

400mW

100 @ 40mA, 8V

120mA

150°C (TJ)

Surface Mount

SOT-143R

MRF904

Microsemi Corporation

TRANS NPN 15V 30MA TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
Gain: 6.5dB ~ 10.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고12,960

15V

4GHz

1.5dB @ 450MHz

6.5dB ~ 10.5dB

200mW

30 @ 5mA, 5V

30mA

200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

BFG590,215

NXP

TRANS NPN 15V 200MA SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,632

15V

5GHz

-

400mW

60 @ 70mA, 8V

200mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

NESG2030M04-A

CEL

TRANS NPN 2GHZ SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.3V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Gain: 16dB
Power - Max: 80mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

패키지: SOT-343F

재고3,408

2.3V

60GHz

0.9dB ~ 1.1dB @ 2GHz

16dB

80mW

200 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

M04

NE85619-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고5,328

12V

4.5GHz

1.2dB @ 1GHz

9dB

100mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-523

NE681M03-A

CEL

TRANSISTOR NPN 1GHZ M03

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: M03

패키지: SOT-623F

재고2,448

10V

7GHz

1.4dB ~ 2.7dB @ 1GHz

-

125mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-623F

M03

KSC1674COBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고10,116

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BF494_D74Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,824

20V

-

350mW

67 @ 1mA, 10V

30mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SC39320TL

Panasonic Electronic Components

TRANS NPN HF AMP 20VCEO SMINI 3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고3,296

20V

1.6GHz

-

20dB

150mW

800 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

UPA810T-T1

CEL

TRANS NPN HF FT=4.5GHZ 6SMT

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.5dB @ 1GHz
Gain: 7dB ~ 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

패키지: 6-TSSOP, SC-88, SOT-363

재고259,824

12V

4.5GHz

1.2dB ~ 2.5dB @ 1GHz

7dB ~ 9dB

200mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

BFS17,235

NXP

TRANS NPN 15V 25MA 1GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,592

15V

1GHz

4.5dB @ 500MHz

-

300mW

25 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFM520,115

NXP

TRANS NPN DUAL 70MA 8V 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고7,584

8V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

1W

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

BFQ67W,115

NXP

TRANS NPN 10V 20MA 8GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,520

10V

8GHz

1.3dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

1214-300

Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

패키지: 55KT

재고4,368

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55KT

UTV005

Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: 55FT

재고7,296

24V

470MHz ~ 860MHz

-

11dB

8W

20 @ 100mA, 5V

750mA

200°C (TJ)

Chassis, Stud Mount

55FT

MRF586G

Microsemi Corporation

TRANS BIPO NPN TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고4,208

17V

3GHz

-

13.5dB

1W

40 @ 50mA, 5V

200mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

AT-32033-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,584

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N3866

Central Semiconductor Corp

TRANS RF NPN 30V 400MA TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고32,508

30V

500MHz

-

5W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFQ18A,115

NXP

TRANS NPN 18V 150MA SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고14,028

18V

4GHz

-

1W

25 @ 100mA, 10V

150mA

175°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

NESG270034-T1-AZ

CEL

TRANSISTOR NPN 25V 3-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.2V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: 3-PowerMiniMold

패키지: -

Request a Quote

9.2V

-

1.9W

80 @ 100mA, 3V

750mA

-

Surface Mount

TO-243AA

3-PowerMiniMold

4MP10CH-TL-E

onsemi

BIP NPN 0.1A 200V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 200V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

패키지: -

Request a Quote

200V

400MHz

-

600mW

60 @ 10mA, 10V

100mA

-

Surface Mount

SC-96

3-CPH

MS1006

Microsemi Corporation

RF TRANS NPN 55V 30MHZ M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 127W
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V
Current - Collector (Ic) (Max): 3.25A
Operating Temperature: 200°C
Mounting Type: Stud Mount
Package / Case: M135
Supplier Device Package: M135

패키지: -

Request a Quote

55V

30MHz

-

14dB

127W

19 @ 1.4A, 6V

3.25A

200°C

Stud Mount

M135

NTE15

NTE Electronics, Inc

RF TRANS NPN 19V 1.1GHZ 3SIP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 19V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: 3-SIP

패키지: -

Request a Quote

19V

1.1GHz

-

300mW

39 @ 5mA, 10V

50mA

125°C (TJ)

Through Hole

3-SIP

NTE77

NTE Electronics, Inc

RF TRANS NPN 30V 1.8GHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 1.8GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz
Gain: 7.2dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

1.8GHz

2.7dB ~ 7dB @ 200MHz ~ 216MHz

7.2dB

3.5W

30 @ 50mA, 15V

400mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39