페이지 194 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
QJD1210SA1	Powerex Inc.	MOSFET 2N-CH 1200V 100A SIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 1.6V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고4,992	Standard	1200V (1.2kV)	100A	17 mOhm @ 100A, 15V	1.6V @ 34mA	330nC @ 15V	8200pF @ 10V	520W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
AO6801A	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 2.3A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고454,248	Logic Level Gate	30V	2.3A	115 mOhm @ 2.3A, 10V	1.4V @ 250µA	7nC @ 10V	315pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI6966DQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고390,384	Logic Level Gate	20V	4A	30 mOhm @ 4.5A, 4.5V	1.4V @ 250µA	20nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4230DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,536	Logic Level Gate	30V	8A	20.5 mOhm @ 8A, 10V	3V @ 250µA	25nC @ 10V	950pF @ 15V	3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDW9926A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4.5A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고513,732	Logic Level Gate	20V	4.5A	32 mOhm @ 4.5A, 4.5V	1.5V @ 250µA	9nC @ 4.5V	630pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTJD4401NT1	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고15,828	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTL4502NT1	ON Semiconductor	MOSFET 4N-CH 24V 11.4A 16PIN FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11.4A Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-PowerQFN Supplier Device Package: PlnPAK	패키지: 16-PowerQFN	재고7,664	Logic Level Gate	24V	11.4A	11 mOhm @ 15A, 10V	2V @ 250µA	13nC @ 4.5V	1605pF @ 20V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	16-PowerQFN	PlnPAK
NDS9947	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고205,848	Logic Level Gate	20V	3.5A	100 mOhm @ 3.5A, 10V	3V @ 250µA	13nC @ 10V	542pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60AM35T1G	Microsemi Corporation	MOSFET 2N-CH 600V 72A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고2,832	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
BUK7K134-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 9.8A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.8A Rds On (Max) @ Id, Vgs: 121 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V Power - Max: 32W Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고3,568	Standard	100V	9.8A	121 mOhm @ 5A, 10V	4V @ 1mA	10.5nC @ 10V	564pF @ 25V	32W	-	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FDMS3606AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고6,224	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMC25D1UVT-7	Diodes Incorporated	MOSFET N/P-CH 25V/12V TSOT26 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V, 12V Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,704	Standard	25V, 12V	500mA, 3.9A	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.9nC @ 10V	27.6pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC3025LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.5A/4.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고218,472	Logic Level Gate	30V	6.5A, 4.2A	20 mOhm @ 7.4A, 10V	2V @ 250µA	9.8nC @ 10V	501pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDY4000CZ	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SC89-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고6,560	Logic Level Gate	20V	600mA, 350mA	700 mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
DI048N04PQ2-AQ	Diotec Semiconductor	MOSFET, POWERQFN 5X6, 40V, 48A, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: TDSON-8-4	패키지: -	재고15,000	-	40V	48A (Tc)	9.6mOhm @ 12A, 10V	2.5V @ 250µA	48nC @ 10V	2270pF @ 20V	27W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	TDSON-8-4
CSD86336Q3DT	Texas Instruments	MOSFET 2N-CH 25V 20A 8VSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	패키지: -	재고3	Logic Level Gate, 5V Drive	25V	20A (Ta)	9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	1.9V @ 250µA, 1.6V @ 250µA	3.8nC @ 45V, 7.4nC @ 45V	494pF @ 12.5V, 970pF @ 12.5V	6W	-55°C ~ 125°C	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
IQE220N15NM5CGSCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Supplier Device Package: PG-WHTFN-9	패키지: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	9-PowerWDFN	PG-WHTFN-9
DMP31D7LVQ-7	Diodes Incorporated	MOSFET 2P-CH 30V 0.62A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고8,220	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI5980DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 2.5A CHIPFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V Power - Max: 7.8W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® ChipFET™ Dual Supplier Device Package: PowerPAK® ChipFet Dual	패키지: -	Request a Quote	-	100V	2.5A	567mOhm @ 400mA, 10V	4V @ 250µA	3.3nC @ 10V	78pF @ 50V	7.8W	-	Surface Mount	PowerPAK® ChipFET™ Dual	PowerPAK® ChipFet Dual
SQJ910AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고8,910	-	30V	30A (Tc)	7mOhm @ 12A, 10V	2.5V @ 250µA	39nC @ 10V	1869pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PJQ5844-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 10A/45A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Power - Max: 2W (Ta), 38.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	패키지: -	Request a Quote	-	40V	10A (Ta), 45A (Tc)	8mOhm @ 15A, 10V	2.5V @ 250µA	17nC @ 4.5V	1759pF @ 25V	2W (Ta), 38.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
SQJ844AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	30V	8A (Tc)	16.6mOhm @ 7.6A, 10V	2.5V @ 250µA	26nC @ 10V	1161pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ914EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	30V	30A (Tc)	12mOhm @ 4.5A, 10V	2.5V @ 250µA	25nC @ 10V	1110pF @ 15V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
RF1K4909396	Fairchild Semiconductor	MOSFET 2P-CH 12V 2.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	12V	2.5A (Ta)	130mOhm @ 2.5A, 5V	2V @ 250µA	24nC @ 10V	775pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AOCA33104E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 30A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (2.98x1.49)	패키지: -	Request a Quote	-	12V	30A (Ta)	2.8mOhm @ 5A, 4.5V	1.2V @ 250µA	36nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (2.98x1.49)
EPC2221	EPC	GANFET 2N-CH 100V 5A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	재고15,519	-	100V	5A	-	-	-	-	-	150°C (TJ)	Surface Mount	Die	Die
DMN52D0UVA-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고30,000	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM170HM12CAG	Microchip Technology	SIC 4N-CH 1700V 179A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 843W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고39	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

QJD1210SA1

Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 1.6V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V
Power - Max: 520W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고4,992

Standard

1200V (1.2kV)

100A

17 mOhm @ 100A, 15V

1.6V @ 34mA

330nC @ 15V

8200pF @ 10V

520W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AO6801A

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 2.3A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고454,248

Logic Level Gate

30V

2.3A

115 mOhm @ 2.3A, 10V

1.4V @ 250µA

7nC @ 10V

315pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI6966DQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고390,384

Logic Level Gate

20V

4A

30 mOhm @ 4.5A, 4.5V

1.4V @ 250µA

20nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4230DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,536

Logic Level Gate

30V

8A

20.5 mOhm @ 8A, 10V

3V @ 250µA

25nC @ 10V

950pF @ 15V

3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDW9926A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고513,732

Logic Level Gate

20V

4.5A

32 mOhm @ 4.5A, 4.5V

1.5V @ 250µA

9nC @ 4.5V

630pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTJD4401NT1

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고15,828

Logic Level Gate

20V

630mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NTL4502NT1

ON Semiconductor

MOSFET 4N-CH 24V 11.4A 16PIN

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11.4A
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerQFN
Supplier Device Package: PlnPAK

패키지: 16-PowerQFN

재고7,664

Logic Level Gate

24V

11.4A

11 mOhm @ 15A, 10V

2V @ 250µA

13nC @ 4.5V

1605pF @ 20V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

16-PowerQFN

PlnPAK

NDS9947

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고205,848

Logic Level Gate

20V

3.5A

100 mOhm @ 3.5A, 10V

3V @ 250µA

13nC @ 10V

542pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60AM35T1G

Microsemi Corporation

MOSFET 2N-CH 600V 72A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고2,832

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

BUK7K134-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 9.8A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.8A
Rds On (Max) @ Id, Vgs: 121 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V
Power - Max: 32W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고3,568

Standard

100V

9.8A

121 mOhm @ 5A, 10V

4V @ 1mA

10.5nC @ 10V

564pF @ 25V

32W

-

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FDMS3606AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고6,224

Logic Level Gate

30V

13A, 27A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1695pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

DMC25D1UVT-7

Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,704

Standard

25V, 12V

500mA, 3.9A

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.9nC @ 10V

27.6pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC3025LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고218,472

Logic Level Gate

30V

6.5A, 4.2A

20 mOhm @ 7.4A, 10V

2V @ 250µA

9.8nC @ 10V

501pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDY4000CZ

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC89-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고6,560

Logic Level Gate

20V

600mA, 350mA

700 mOhm @ 600mA, 4.5V

1.5V @ 250µA

1.1nC @ 4.5V

60pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

DI048N04PQ2-AQ

Diotec Semiconductor

MOSFET, POWERQFN 5X6, 40V, 48A,

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: TDSON-8-4

패키지: -

재고15,000

-

40V

48A (Tc)

9.6mOhm @ 12A, 10V

2.5V @ 250µA

48nC @ 10V

2270pF @ 20V

27W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

TDSON-8-4

CSD86336Q3DT

Texas Instruments

MOSFET 2N-CH 25V 20A 8VSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Power - Max: 6W
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

패키지: -

재고3

Logic Level Gate, 5V Drive

25V

20A (Ta)

9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

1.9V @ 250µA, 1.6V @ 250µA

3.8nC @ 45V, 7.4nC @ 45V

494pF @ 12.5V, 970pF @ 12.5V

6W

-55°C ~ 125°C

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

IQE220N15NM5CGSCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Supplier Device Package: PG-WHTFN-9

패키지: -

Request a Quote

-

150V

-

Surface Mount

9-PowerWDFN

PG-WHTFN-9

DMP31D7LVQ-7

Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고8,220

-

30V

620mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI5980DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V
Power - Max: 7.8W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Supplier Device Package: PowerPAK® ChipFet Dual

패키지: -

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-

100V

2.5A

567mOhm @ 400mA, 10V

4V @ 250µA

3.3nC @ 10V

78pF @ 50V

7.8W

-

Surface Mount

PowerPAK® ChipFET™ Dual

PowerPAK® ChipFet Dual

SQJ910AEP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고8,910

-

30V

30A (Tc)

7mOhm @ 12A, 10V

2.5V @ 250µA

39nC @ 10V

1869pF @ 15V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PJQ5844-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 10A/45A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Power - Max: 2W (Ta), 38.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

패키지: -

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-

40V

10A (Ta), 45A (Tc)

8mOhm @ 15A, 10V

2.5V @ 250µA

17nC @ 4.5V

1759pF @ 25V

2W (Ta), 38.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

SQJ844AEP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

30V

8A (Tc)

16.6mOhm @ 7.6A, 10V

2.5V @ 250µA

26nC @ 10V

1161pF @ 15V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ914EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

30V

30A (Tc)

12mOhm @ 4.5A, 10V

2.5V @ 250µA

25nC @ 10V

1110pF @ 15V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

RF1K4909396

Fairchild Semiconductor

MOSFET 2P-CH 12V 2.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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Logic Level Gate

12V

2.5A (Ta)

130mOhm @ 2.5A, 5V

2V @ 250µA

24nC @ 10V

775pF @ 10V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AOCA33104E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 30A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (2.98x1.49)

패키지: -

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-

12V

30A (Ta)

2.8mOhm @ 5A, 4.5V

1.2V @ 250µA

36nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (2.98x1.49)

EPC2221

EPC

GANFET 2N-CH 100V 5A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

재고15,519

-

100V

5A

-

150°C (TJ)

Surface Mount

Die

DMN52D0UVA-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고30,000

-

50V

480mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MSCSM170HM12CAG

Microchip Technology

SIC 4N-CH 1700V 179A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Power - Max: 843W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고39

-

1700V (1.7kV)

179A (Tc)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

534nC @ 20V

9900pF @ 1000V

843W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-