페이지 195 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRFH4255DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 64A/105A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 105A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 38W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	패키지: 8-PowerVDFN	재고5,472	Logic Level Gate	25V	64A, 105A	3.2 mOhm @ 30A, 10V	2.1V @ 35µA	15nC @ 4.5V	1314pF @ 13V	31W, 38W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)
BSO200N03	Infineon Technologies	MOSFET 2N-CH 30V 6.6A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고636,780	Logic Level Gate	30V	6.6A	20 mOhm @ 7.9A, 10V	2V @ 13µA	8nC @ 5V	1010pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO150N03	Infineon Technologies	MOSFET 2N-CH 30V 7.6A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고667,368	Standard	30V	7.6A	15 mOhm @ 9.1A, 10V	2V @ 25µA	15nC @ 5V	1890pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO612CV	Infineon Technologies	MOSFET N/P-CH 60V 3A/2A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,640	Standard	60V	3A, 2A	120 mOhm @ 3A, 10V	4V @ 20µA	15.5nC @ 10V	340pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
AO7600_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH SC70-6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고3,904	Standard	20V	900mA	300 mOhm @ 900mA, 4.5V	900mV @ 250µA	1.9nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
ECH8602M-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 6A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고1,008,000	Logic Level Gate	30V	6A	30 mOhm @ 3A, 4.5V	-	7.5nC @ 4.5V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
FD6M043N08	Fairchild/ON Semiconductor	MOSFET 2N-CH 75V 65A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	패키지: EPM15	재고7,824	Standard	75V	65A	4.3 mOhm @ 40A, 10V	4V @ 250µA	148nC @ 10V	6180pF @ 25V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
2N7002V-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고36,000	Standard	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NDS8947	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고92,136	Logic Level Gate	30V	4A	65 mOhm @ 4A, 10V	2.8V @ 250µA	30nC @ 10V	690pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG16N10S4L61AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: 8-PowerVDFN	재고3,104	Logic Level Gate	100V	16A	61 mOhm @ 16A, 10V	2.1V @ 90µA	11nC @ 10V	845pF @ 25V	29W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
NVMFD5489NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 4.5A DFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	패키지: 8-PowerTDFN	재고2,992	Logic Level Gate	60V	4.5A	65 mOhm @ 15A, 10V	2.5V @ 250µA	12.4nC @ 10V	330pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
BUK9K5R1-30EX	Nexperia USA Inc.	MOSFET 2N-CH 30V 40A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고7,904	Logic Level Gate	30V	40A	5.3 mOhm @ 10A, 5V	2.1V @ 1mA	26.7nC @ 5V	3065pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
ALD110814PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고6,624	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIA537EDJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V/20V SC-70-6L FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고5,760	Logic Level Gate	12V, 20V	4.5A	28 mOhm @ 5.2A, 4.5V	1V @ 250µA	16nC @ 8V	455pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
BSS138BKS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고248,130	Logic Level Gate	60V	320mA	1.6 Ohm @ 320mA, 10V	1.6V @ 250µA	0.7nC @ 4.5V	56pF @ 10V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
FDS3890	Fairchild/ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고243,708	Logic Level Gate	80V	4.7A	44 mOhm @ 4.7A, 10V	4V @ 250µA	35nC @ 10V	1180pF @ 40V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
HP8KC7TB1	Rohm Semiconductor	60V 24A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 3W (Ta), 26W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	패키지: -	재고7,410	-	60V	13.5A (Ta), 24A (Tc)	11.5mOhm @ 13.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 30V	3W (Ta), 26W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
DMN33D9LV-13A	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.4V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
PJS6835_S2_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.5A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: -	Request a Quote	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	38pF @ 10V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
SI7844DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	Logic Level Gate	30V	6.4A	22mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
ZXMD65P03N8TA	Diodes Incorporated	MOSFET 2P-CH 30V 3.8A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 55mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	30V	3.8A	55mOhm @ 4.9A, 10V	1V @ 250µA	25.7nC @ 10V	930pF @ 25V	1.25W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QH8JC5TCR	Rohm Semiconductor	MOSFET 2P-CH 60V 3.5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고14,064	-	60V	3.5A (Ta)	91mOhm @ 3.5A, 10V	2.5V @ 1mA	17.3nC @ 10V	850pF @ 30V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
G100C04D52	Goford Semiconductor	MOSFET 40V 40A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 24A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 20V, 2451pF @ 20V Power - Max: 65W (Tc), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (4.9x5.75)	패키지: -	Request a Quote	-	40V	40A (Tc), 24A (Tc)	9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V	2.5V @ 250µA	29nC @ 10V, 45nC @ 10V	2213pF @ 20V, 2451pF @ 20V	65W (Tc), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)
EMH2402-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMG6302UDW-7	Diodes Incorporated	MOSFET 2P-CH 25V 0.15A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	25V	150mA (Ta)	10Ohm @ 140mA, 4.5V	1.5V @ 250µA	0.34nC @ 4.5V	30.7pF @ 10V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SFS9630YDTU	Fairchild Semiconductor	MOSFET P-CH 200V 4.4A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTC120WX75GD-SMD	IXYS	MOSFET 6N-CH 75V 180A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	75V	180A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	178nC @ 10V	10500pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
MSCMC90AM12C3AG	Microchip Technology	SIC 900V 110A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	패키지: -	Request a Quote	-	900V	110A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP3F

IRFH4255DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 64A/105A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 105A
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Power - Max: 31W, 38W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6)

패키지: 8-PowerVDFN

재고5,472

Logic Level Gate

25V

64A, 105A

3.2 mOhm @ 30A, 10V

2.1V @ 35µA

15nC @ 4.5V

1314pF @ 13V

31W, 38W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PQFN (5x6)

BSO200N03

Infineon Technologies

MOSFET 2N-CH 30V 6.6A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고636,780

Logic Level Gate

30V

6.6A

20 mOhm @ 7.9A, 10V

2V @ 13µA

8nC @ 5V

1010pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

BSO150N03

Infineon Technologies

MOSFET 2N-CH 30V 7.6A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고667,368

Standard

30V

7.6A

15 mOhm @ 9.1A, 10V

2V @ 25µA

15nC @ 5V

1890pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

BSO612CV

Infineon Technologies

MOSFET N/P-CH 60V 3A/2A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,640

Standard

60V

3A, 2A

120 mOhm @ 3A, 10V

4V @ 20µA

15.5nC @ 10V

340pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

AO7600_001

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH SC70-6

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고3,904

Standard

20V

900mA

300 mOhm @ 900mA, 4.5V

900mV @ 250µA

1.9nC @ 4.5V

120pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

ECH8602M-TL-H

ON Semiconductor

MOSFET 2N-CH 30V 6A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고1,008,000

Logic Level Gate

30V

6A

30 mOhm @ 3A, 4.5V

-

7.5nC @ 4.5V

-

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

FD6M043N08

Fairchild/ON Semiconductor

MOSFET 2N-CH 75V 65A EPM15

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15

패키지: EPM15

재고7,824

Standard

75V

65A

4.3 mOhm @ 40A, 10V

4V @ 250µA

148nC @ 10V

6180pF @ 25V

-

-40°C ~ 150°C (TJ)

Through Hole

EPM15

2N7002V-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고36,000

Standard

60V

280mA

7.5 Ohm @ 50mA, 5V

2.5V @ 250µA

-

50pF @ 25V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NDS8947

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고92,136

Logic Level Gate

30V

4A

65 mOhm @ 4A, 10V

2.8V @ 250µA

30nC @ 10V

690pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG16N10S4L61AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Power - Max: 29W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: 8-PowerVDFN

재고3,104

Logic Level Gate

100V

16A

61 mOhm @ 16A, 10V

2.1V @ 90µA

11nC @ 10V

845pF @ 25V

29W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

NVMFD5489NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

패키지: 8-PowerTDFN

재고2,992

Logic Level Gate

60V

4.5A

65 mOhm @ 15A, 10V

2.5V @ 250µA

12.4nC @ 10V

330pF @ 25V

3W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

BUK9K5R1-30EX

Nexperia USA Inc.

MOSFET 2N-CH 30V 40A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고7,904

Logic Level Gate

30V

40A

5.3 mOhm @ 10A, 5V

2.1V @ 1mA

26.7nC @ 5V

3065pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

ALD110814PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고6,624

Standard

10.6V

12mA, 3mA

500 Ohm @ 5.4V

1.42V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SIA537EDJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V/20V SC-70-6L

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고5,760

Logic Level Gate

12V, 20V

4.5A

28 mOhm @ 5.2A, 4.5V

1V @ 250µA

16nC @ 8V

455pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

BSS138BKS,115

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고248,130

Logic Level Gate

60V

320mA

1.6 Ohm @ 320mA, 10V

1.6V @ 250µA

0.7nC @ 4.5V

56pF @ 10V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

FDS3890

Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 4.7A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고243,708

Logic Level Gate

80V

4.7A

44 mOhm @ 4.7A, 10V

4V @ 250µA

35nC @ 10V

1180pF @ 40V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

HP8KC7TB1

Rohm Semiconductor

60V 24A, DUAL NCH+NCH, HSOP8, PO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Power - Max: 3W (Ta), 26W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

패키지: -

재고7,410

-

60V

13.5A (Ta), 24A (Tc)

11.5mOhm @ 13.5A, 10V

2.5V @ 1mA

22nC @ 10V

1400pF @ 30V

3W (Ta), 26W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

DMN33D9LV-13A

Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

Request a Quote

-

30V

350mA (Ta)

2.4Ohm @ 250mA, 10V

1.4V @ 100µA

1.23nC @ 10V

48pF @ 5V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

PJS6835_S2_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

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Logic Level Gate, 1.2V Drive

20V

500mA (Ta)

1.2Ohm @ 500mA, 4.5V

1V @ 250µA

1.4nC @ 4.5V

38pF @ 10V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SI7844DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

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Logic Level Gate

30V

6.4A

22mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-

Surface Mount

PowerPAK® SO-8 Dual

ZXMD65P03N8TA

Diodes Incorporated

MOSFET 2P-CH 30V 3.8A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

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-

30V

3.8A

55mOhm @ 4.9A, 10V

1V @ 250µA

25.7nC @ 10V

930pF @ 25V

1.25W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QH8JC5TCR

Rohm Semiconductor

MOSFET 2P-CH 60V 3.5A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고14,064

-

60V

3.5A (Ta)

91mOhm @ 3.5A, 10V

2.5V @ 1mA

17.3nC @ 10V

850pF @ 30V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

G100C04D52

Goford Semiconductor

MOSFET 40V 40A/24A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 20V, 2451pF @ 20V
Power - Max: 65W (Tc), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (4.9x5.75)

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-

40V

40A (Tc), 24A (Tc)

9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V

2.5V @ 250µA

29nC @ 10V, 45nC @ 10V

2213pF @ 20V, 2451pF @ 20V

65W (Tc), 50W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (4.9x5.75)

EMH2402-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMG6302UDW-7

Diodes Incorporated

MOSFET 2P-CH 25V 0.15A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
Power - Max: 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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-

25V

150mA (Ta)

10Ohm @ 140mA, 4.5V

1.5V @ 250µA

0.34nC @ 4.5V

30.7pF @ 10V

310mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SFS9630YDTU

Fairchild Semiconductor

MOSFET P-CH 200V 4.4A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MTC120WX75GD-SMD

IXYS

MOSFET 6N-CH 75V 180A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

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-

75V

180A (Tc)

3.1mOhm @ 100A, 10V

4V @ 1mA

178nC @ 10V

10500pF @ 25V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

MSCMC90AM12C3AG

Microchip Technology

SIC 900V 110A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

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-

900V

110A (Tc)

-

Chassis Mount

Module

SP3F