페이지 196 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	패키지: 14-DIP (0.300", 7.62mm)	재고2,848	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
FDD8426H	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 12A/10A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A, 10A Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고120,012	Logic Level Gate	40V	12A, 10A	12 mOhm @ 12A, 10V	3V @ 250µA	53nC @ 10V	2735pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
NTHD2102PT1G	ON Semiconductor	MOSFET 2P-CH 8V 3.4A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고1,996,464	Logic Level Gate	8V	3.4A	58 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	16nC @ 2.5V	715pF @ 6.4V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
SI3585DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 2A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고584,652	Logic Level Gate	20V	2A, 1.5A	125 mOhm @ 2.4A, 4.5V	600mV @ 250µA (Min)	3.2nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
ZXMC4A16DN8TC	Diodes Incorporated	MOSFET N/P-CH 40V 4A/3.6A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고447,012	Logic Level Gate	40V	4A, 3.6A	50 mOhm @ 4.5A, 10V	1V @ 250mA (Min)	17nC @ 10V	770pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSC0924NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/32A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	패키지: 8-PowerTDFN	재고7,456	Logic Level Gate, 4.5V Drive	30V	17A, 32A	5 mOhm @ 20A, 10V	2V @ 250µA	10nC @ 4.5V	1160pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
FMM22-05PF	IXYS	MOSFET 2N-CH 500V 13A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Power - Max: 132W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고3,264	Standard	500V	13A	270 mOhm @ 11A, 10V	5V @ 1mA	50nC @ 10V	2630pF @ 25V	132W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
AO4822A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고230,616	Logic Level Gate	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EMH2604-TL-H	ON Semiconductor	MOSFET N/P-CH 20V 4A/3A EMH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	패키지: 8-SMD, Flat Lead	재고7,296	Logic Level Gate	20V	4A, 3A	45 mOhm @ 4A, 4.5V	-	4.7nC @ 4.5V	345pF @ 10V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
IRF7306TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 3.6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고265,440	Logic Level Gate	30V	3.6A	100 mOhm @ 1.8A, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ1416NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 4-WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.4x1.6)	패키지: 4-XFBGA, WLCSP	재고7,248	Standard	-	-	-	1.3V @ 250µA	17nC @ 4.5V	-	500mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLCSP	4-WLCSP (1.4x1.6)
IRF7380TRPBF	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고73,572	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC4040SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 6.8A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고200,136	Logic Level Gate	40V	6.8A	25 mOhm @ 3A, 10V	1.8V @ 250µA	37.6nC @ 10V	1790pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA2450BTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 8.6A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.6A Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	패키지: -	Request a Quote	Logic Level Gate	20V	8.6A	17.5mOhm @ 4A, 4.5V	1.5V @ 1mA	8nC @ 4V	520pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
DMP31D7LV-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMS001N025DSD	onsemi	MOSFET 2N-CH 25V 19A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	Request a Quote	-	25V	19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)	3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V	2.5V @ 320µA, 3V @ 1mA	30nC @ 10V, 104nC @ 10V	1370pF @ 13V, 5105pF @ 13V	2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
NTTFS5C478NLTAG	onsemi	MOSFET 40V U8FL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SI3439KDWA-TP	Micro Commercial Co	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고135,483	Logic Level Gate	20V	750mA, 600mA	300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AONY36352	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 18.5A/49A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	패키지: -	재고45,120	-	30V	18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)	5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V	2.1V @ 250µA, 1.9V @ 250µA	20nC @ 10V, 52nC @ 10V	820pF @ 15V, 2555pF @ 15V	3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
SSM6L820R-LXHF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고44,349	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
G2K2P10S2E	Goford Semiconductor	MOSFET 2P-CH 100V 3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Power - Max: 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고11,349	-	100V	3.5A (Tc)	200mOhm @ 3A, 10V	2.5V @ 250µA	23nC @ 10V	1623pF @ 50V	3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJB44EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고8,622	-	40V	30A (Tc)	5.2mOhm @ 8A, 10V	2.2V @ 250µA	50nC @ 10V	3075pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMN22M5UCA10-7	Diodes Incorporated	MOSFET 2N-CH 24V X4-DSN3221-10 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 12V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: X4-DSN3221-10	패키지: -	Request a Quote	-	24V	16.5A (Ta)	4mOhm @ 5A, 4.5V	1.3V @ 1mA	40.7nC @ 4.5V	3490pF @ 12V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	X4-DSN3221-10
DMN62D2UVQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3032LFDBWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 5.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (SWP) Type B	패키지: -	Request a Quote	-	30V	5.5A (Ta)	30mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (SWP) Type B
PSMN014-40HLDX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고213	Logic Level Gate	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMTH8030LPDW-13	Diodes Incorporated	MOSFET 2N-CH 80V 28.5A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V Power - Max: 3.1W (Ta), 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	Request a Quote	-	80V	28.5A (Tc)	26mOhm @ 10A, 10V	2.5V @ 250µA	10.4nC @ 10V	631pF @ 40V	3.1W (Ta), 41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
SI4920DY	Fairchild Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	30V	6A (Ta)	28mOhm @ 6A, 10V	3V @ 250µA	13nC @ 5V	830pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

JANTXV2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

패키지: 14-DIP (0.300", 7.62mm)

재고2,848

Standard

100V

1A

700 mOhm @ 600mA, 10V

4V @ 250µA

60nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

FDD8426H

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 12A/10A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고120,012

Logic Level Gate

40V

12A, 10A

12 mOhm @ 12A, 10V

3V @ 250µA

53nC @ 10V

2735pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

NTHD2102PT1G

ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고1,996,464

Logic Level Gate

8V

3.4A

58 mOhm @ 3.4A, 4.5V

1.5V @ 250µA

16nC @ 2.5V

715pF @ 6.4V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

SI3585DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고584,652

Logic Level Gate

20V

2A, 1.5A

125 mOhm @ 2.4A, 4.5V

600mV @ 250µA (Min)

3.2nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

ZXMC4A16DN8TC

Diodes Incorporated

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고447,012

Logic Level Gate

40V

4A, 3.6A

50 mOhm @ 4.5A, 10V

1V @ 250mA (Min)

17nC @ 10V

770pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSC0924NDIATMA1

Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

패키지: 8-PowerTDFN

재고7,456

Logic Level Gate, 4.5V Drive

30V

17A, 32A

5 mOhm @ 20A, 10V

2V @ 250µA

10nC @ 4.5V

1160pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

FMM22-05PF

IXYS

MOSFET 2N-CH 500V 13A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Power - Max: 132W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고3,264

Standard

500V

13A

270 mOhm @ 11A, 10V

5V @ 1mA

50nC @ 10V

2630pF @ 25V

132W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

AO4822A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고230,616

Logic Level Gate

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

EMH2604-TL-H

ON Semiconductor

MOSFET N/P-CH 20V 4A/3A EMH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Power - Max: 1.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

패키지: 8-SMD, Flat Lead

재고7,296

Logic Level Gate

20V

4A, 3A

45 mOhm @ 4A, 4.5V

-

4.7nC @ 4.5V

345pF @ 10V

1.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

IRF7306TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고265,440

Logic Level Gate

30V

3.6A

100 mOhm @ 1.8A, 10V

1V @ 250µA

25nC @ 10V

440pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDZ1416NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 4-WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WLCSP (1.4x1.6)

패키지: 4-XFBGA, WLCSP

재고7,248

Standard

-

1.3V @ 250µA

17nC @ 4.5V

-

500mW

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, WLCSP

4-WLCSP (1.4x1.6)

IRF7380TRPBF

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고73,572

Logic Level Gate

80V

3.6A

73 mOhm @ 2.2A, 10V

4V @ 250µA

23nC @ 10V

660pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC4040SSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 6.8A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고200,136

Logic Level Gate

40V

6.8A

25 mOhm @ 3A, 10V

1.8V @ 250µA

37.6nC @ 10V

1790pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UPA2450BTL-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 20V 8.6A 6HWSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.6A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 700mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: 6-HWSON

패키지: -

Request a Quote

Logic Level Gate

20V

8.6A

17.5mOhm @ 4A, 4.5V

1.5V @ 1mA

8nC @ 4V

520pF @ 10V

700mW

-

Surface Mount

6-VFDFN Exposed Pad

6-HWSON

DMP31D7LV-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

Request a Quote

-

30V

620mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDMS001N025DSD

onsemi

MOSFET 2N-CH 25V 19A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V
Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

Request a Quote

-

25V

19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)

3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V

2.5V @ 320µA, 3V @ 1mA

30nC @ 10V, 104nC @ 10V

1370pF @ 13V, 5105pF @ 13V

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

NTTFS5C478NLTAG

onsemi

MOSFET 40V U8FL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SI3439KDWA-TP

Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고135,483

Logic Level Gate

20V

750mA, 600mA

300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V

1.1V @ 250µA

0.8nC @ 4.5V, 0.86nC @ 4.5V

33pF @ 16V, 40pF @ 16V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

AONY36352

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 18.5A/49A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)

패키지: -

재고45,120

-

30V

18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)

5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V

2.1V @ 250µA, 1.9V @ 250µA

20nC @ 10V, 52nC @ 10V

820pF @ 15V, 2555pF @ 15V

3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (5x6)

SSM6L820R-LXHF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고44,349

-

30V, 20V

4A (Ta)

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

1V @ 1mA, 1.2V @ 1mA

3.2nC @ 4.5V, 6.7nC @4.5V

310pF @ 15V, 480pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

G2K2P10S2E

Goford Semiconductor

MOSFET 2P-CH 100V 3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Power - Max: 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고11,349

-

100V

3.5A (Tc)

200mOhm @ 3A, 10V

2.5V @ 250µA

23nC @ 10V

1623pF @ 50V

3.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SQJB44EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고8,622

-

40V

30A (Tc)

5.2mOhm @ 8A, 10V

2.2V @ 250µA

50nC @ 10V

3075pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

DMN22M5UCA10-7

Diodes Incorporated

MOSFET 2N-CH 24V X4-DSN3221-10

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 12V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: X4-DSN3221-10

패키지: -

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-

24V

16.5A (Ta)

4mOhm @ 5A, 4.5V

1.3V @ 1mA

40.7nC @ 4.5V

3490pF @ 12V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

X4-DSN3221-10

DMN62D2UVQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500µW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

60V

450mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500µW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3032LFDBWQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (SWP) Type B

패키지: -

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-

30V

5.5A (Ta)

30mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (SWP) Type B

PSMN014-40HLDX

Nexperia USA Inc.

MOSFET 2N-CH 40V 42A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power - Max: 46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고213

Logic Level Gate

40V

42A (Ta)

13.6mOhm @ 10A, 10V

2.2V @ 1mA

19.4nC @ 10V

1160pF @ 25V

46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMTH8030LPDW-13

Diodes Incorporated

MOSFET 2N-CH 80V 28.5A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V
Power - Max: 3.1W (Ta), 41W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

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-

80V

28.5A (Tc)

26mOhm @ 10A, 10V

2.5V @ 250µA

10.4nC @ 10V

631pF @ 40V

3.1W (Ta), 41W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

SI4920DY

Fairchild Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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Logic Level Gate

30V

6A (Ta)

28mOhm @ 6A, 10V

3V @ 250µA

13nC @ 5V

830pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC