페이지 47 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4852L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,160	Logic Level Gate	60V	3A	90 mOhm @ 3A, 10V	2.6V @ 250µA	9.2nC @ 10V	450pF @ 30V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1553DL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고522,252	Logic Level Gate	20V	660mA, 410mA	385 mOhm @ 660mA, 4.5V	600mV @ 250µA (Min)	1.2nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTGD3133PT1G	ON Semiconductor	MOSFET 2P-CH 20V 1.6A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 560mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고837,552	Logic Level Gate	20V	1.6A	145 mOhm @ 2.2A, 4.5V	1.4V @ 250µA	5.5nC @ 4.5V	400pF @ 10V	560mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
STS1DNF20	STMicroelectronics	MOSFET N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,464	-	-	-	-	-	-	-	-	-	-	-	-
NVDD5894NLT4G	ON Semiconductor	MOSFET 2N-CH 40V 14A DPAK FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 25V Power - Max: 3.8W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: D-Pak 5-Lead	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고3,168	Standard	40V	14A	10 mOhm @ 50A, 10V	2.5V @ 250µA	41nC @ 10V	2103pF @ 25V	3.8W	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	D-Pak 5-Lead
SP8J2FU6TB	Rohm Semiconductor	MOSFET 2P-CH 30V 4.5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,096	Logic Level Gate	30V	4.5A	56 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.5nC @ 5V	850pF @ 10V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC1028UFDB-13	Diodes Incorporated	MOSFET N/P-CH 12V/20V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고4,896	Standard	12V, 20V	6A, 3.4A	25 mOhm @ 5.2A, 4.5V	1V @ 250µA	18.5nC @ 8V	787pF @ 6V	1.36W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SI5948DU-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V Power - Max: 7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	패키지: PowerPAK? ChipFET? Dual	재고6,096	Standard	40V	6A (Tc)	82 mOhm @ 5A, 10V	2.5V @ 250µA	2.6nC @ 4.5V	165pF @ 20V	7W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FG6943010R	Panasonic Electronic Components	MOSFET N/P-CH 30V 0.1A SSMINI6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	패키지: SOT-563, SOT-666	재고3,952	Standard	30V	100mA	-	-	-	-	-	-40°C ~ 85°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
FDME1023PZT	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 2.6A 6-MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고39,882	Logic Level Gate	20V	2.6A	142 mOhm @ 2.3A, 4.5V	1V @ 250µA	7.7nC @ 4.5V	405pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-MicroFET (1.6x1.6)
FDMD85100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고23,880	Standard	100V	10.4A	9.9 mOhm @ 10.4A, 10V	4V @ 250µA	31nC @ 10V	2230pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
NXH020P120MNF1PTG	onsemi	SIC 2N-CH 1200V 51A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Power - Max: 119W (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
SP8K31FRATB	Rohm Semiconductor	MOSFET 2N-CH 60V 3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	60V	3.5A (Ta)	120mOhm @ 3.5A, 10V	2.5V @ 1mA	5.2nC @ 5V	250pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMS7606	Fairchild Semiconductor	MOSFET 2N-CH 30V 11.5A/12A PWR56 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A, 12A Rds On (Max) @ Id, Vgs: 11.4mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: -	Request a Quote	Logic Level Gate	30V	11.5A, 12A	11.4mOhm @ 11.5A, 10V	3V @ 250µA	22nC @ 10V	1400pF @ 15V	1W	-	Surface Mount	8-PowerWDFN	Power56
MSCSM70TAM10TPAG	Microchip Technology	SIC 6N-CH 700V 238A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SQJ952EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 23A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V Power - Max: 25W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	패키지: -	Request a Quote	-	60V	23A (Tc)	20mOhm @ 10.3A, 10V	2.5V @ 250µA	30nC @ 10V	1800pF @ 30V	25W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMC3060LVTQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 3.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	3.6A (Ta), 2.8A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.1V @ 250µA	11.3nC @ 10V, 8.6nC @ 10V	395pF @ 15V, 324pF @ 15V	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
TSM2N7002AKDCU6-RFG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 30V Power - Max: 240mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고8,988	Logic Level Gate	60V	220mA (Ta)	2.5Ohm @ 220mA, 10V	2.5V @ 250µA	0.91nC @ 4.5V	30pF @ 30V	240mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM120DUM027AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2968W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @ 1000V	2968W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SP8K33HZGTB	Rohm Semiconductor	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고6,885	-	60V	5A (Ta)	48mOhm @ 5A, 10V	2.5V @ 1mA	12nC @ 5V	620pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN1006UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN2718-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	패키지: -	Request a Quote	-	-	-	-	1.3V @ 1mA	35.2nC @ 4.5V	2360pF @ 6V	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
SP8K80TB1	Rohm Semiconductor	MOSFET 2N-CH 500V 0.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 11.7Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23.5pF @ 25V Power - Max: 2W (Ta) Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고7,986	-	500V	500mA (Ta)	11.7Ohm @ 250mA, 10V	5V @ 1mA	3.8nC @ 10V	23.5pF @ 25V	2W (Ta)	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FS10ASJ-3-T13-C01	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2090UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Power - Max: 790mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	Request a Quote	-	20V	3.2A (Ta)	90mOhm @ 4A, 4.5V	1V @ 250µA	6.8nC @ 4.5V	634pF @ 10V	790mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
PJS6806_S1_00001	Panjit International Inc.	MOSFET 2N-CH 30V 4A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: -	재고9,126	-	30V	4A (Ta)	48mOhm @ 4A, 10V	2.1V @ 250µA	5.8nC @ 10V	235pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
PJX138L_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.16A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 160mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V Power - Max: 223mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고58,485	-	60V	160mA (Ta)	4.2Ohm @ 160mA, 10V	1.5V @ 250µA	0.7nC @ 4.5V	15pF @ 15V	223mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HS8K1TB	Rohm Semiconductor	MOSFET 2N-CH 30V 10A/11A HSML FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	패키지: -	재고31,440	-	30V	10A (Ta), 11A (Ta)	14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V	2.5V @ 1mA	6nC @ 10V, 7.4nC @ 10V	348pF @ 15V, 429pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-UDFN Exposed Pad	HSML3030L10
FDMS3622SF121	onsemi	MOSFET N-CHANNEL POWER56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AO4852L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,160

Logic Level Gate

60V

3A

90 mOhm @ 3A, 10V

2.6V @ 250µA

9.2nC @ 10V

450pF @ 30V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1553DL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고522,252

Logic Level Gate

20V

660mA, 410mA

385 mOhm @ 660mA, 4.5V

600mV @ 250µA (Min)

1.2nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NTGD3133PT1G

ON Semiconductor

MOSFET 2P-CH 20V 1.6A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 560mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고837,552

Logic Level Gate

20V

1.6A

145 mOhm @ 2.2A, 4.5V

1.4V @ 250µA

5.5nC @ 4.5V

400pF @ 10V

560mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

STS1DNF20

STMicroelectronics

MOSFET N-CH 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,464

-

NVDD5894NLT4G

ON Semiconductor

MOSFET 2N-CH 40V 14A DPAK

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 25V
Power - Max: 3.8W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: D-Pak 5-Lead

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고3,168

Standard

40V

14A

10 mOhm @ 50A, 10V

2.5V @ 250µA

41nC @ 10V

2103pF @ 25V

3.8W

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

D-Pak 5-Lead

SP8J2FU6TB

Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,096

Logic Level Gate

30V

4.5A

56 mOhm @ 4.5A, 10V

2.5V @ 1mA

8.5nC @ 5V

850pF @ 10V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC1028UFDB-13

Diodes Incorporated

MOSFET N/P-CH 12V/20V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Power - Max: 1.36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고4,896

Standard

12V, 20V

6A, 3.4A

25 mOhm @ 5.2A, 4.5V

1V @ 250µA

18.5nC @ 8V

787pF @ 6V

1.36W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SI5948DU-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 82 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Power - Max: 7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

패키지: PowerPAK? ChipFET? Dual

재고6,096

Standard

40V

6A (Tc)

82 mOhm @ 5A, 10V

2.5V @ 250µA

2.6nC @ 4.5V

165pF @ 20V

7W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

FG6943010R

Panasonic Electronic Components

MOSFET N/P-CH 30V 0.1A SSMINI6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

패키지: SOT-563, SOT-666

재고3,952

Standard

30V

100mA

-

-40°C ~ 85°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

FDME1023PZT

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.6A 6-MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고39,882

Logic Level Gate

20V

2.6A

142 mOhm @ 2.3A, 4.5V

1V @ 250µA

7.7nC @ 4.5V

405pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-MicroFET (1.6x1.6)

FDMD85100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고23,880

Standard

100V

10.4A

9.9 mOhm @ 10.4A, 10V

4V @ 250µA

31nC @ 10V

2230pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

NXH020P120MNF1PTG

onsemi

SIC 2N-CH 1200V 51A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Power - Max: 119W (Tj)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV)

51A (Tc)

30mOhm @ 50A, 20V

4.3V @ 20mA

213.5nC @ 20V

2420pF @ 800V

119W (Tj)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

SP8K31FRATB

Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

60V

3.5A (Ta)

120mOhm @ 3.5A, 10V

2.5V @ 1mA

5.2nC @ 5V

250pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMS7606

Fairchild Semiconductor

MOSFET 2N-CH 30V 11.5A/12A PWR56

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A, 12A
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: -

Request a Quote

Logic Level Gate

30V

11.5A, 12A

11.4mOhm @ 11.5A, 10V

3V @ 250µA

22nC @ 10V

1400pF @ 15V

1W

-

Surface Mount

8-PowerWDFN

Power56

MSCSM70TAM10TPAG

Microchip Technology

SIC 6N-CH 700V 238A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 674W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

700V

238A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

674W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SQJ952EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
Power - Max: 25W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

패키지: -

Request a Quote

-

60V

23A (Tc)

20mOhm @ 10.3A, 10V

2.5V @ 250µA

30nC @ 10V

1800pF @ 30V

25W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

DMC3060LVTQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

Request a Quote

-

30V

3.6A (Ta), 2.8A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.1V @ 250µA

11.3nC @ 10V, 8.6nC @ 10V

395pF @ 15V, 324pF @ 15V

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

TSM2N7002AKDCU6-RFG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 30V
Power - Max: 240mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고8,988

Logic Level Gate

60V

220mA (Ta)

2.5Ohm @ 220mA, 10V

2.5V @ 250µA

0.91nC @ 4.5V

30pF @ 30V

240mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MSCSM120DUM027AG

Microchip Technology

SIC 2N-CH 1200V 733A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Power - Max: 2968W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 9mA

2088nC @ 20V

27000pF @ 1000V

2968W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SP8K33HZGTB

Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고6,885

-

60V

5A (Ta)

48mOhm @ 5A, 10V

2.5V @ 1mA

12nC @ 5V

620pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN1006UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN2718-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

패키지: -

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1.3V @ 1mA

35.2nC @ 4.5V

2360pF @ 6V

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

SP8K80TB1

Rohm Semiconductor

MOSFET 2N-CH 500V 0.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 11.7Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.5pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고7,986

-

500V

500mA (Ta)

11.7Ohm @ 250mA, 10V

5V @ 1mA

3.8nC @ 10V

23.5pF @ 25V

2W (Ta)

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FS10ASJ-3-T13-C01

Renesas Electronics Corporation

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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DMP2090UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V
Power - Max: 790mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: -

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20V

3.2A (Ta)

90mOhm @ 4A, 4.5V

1V @ 250µA

6.8nC @ 4.5V

634pF @ 10V

790mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

PJS6806_S1_00001

Panjit International Inc.

MOSFET 2N-CH 30V 4A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: -

재고9,126

-

30V

4A (Ta)

48mOhm @ 4A, 10V

2.1V @ 250µA

5.8nC @ 10V

235pF @ 15V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

PJX138L_R1_00001

Panjit International Inc.

MOSFET 2N-CH 60V 0.16A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V
Power - Max: 223mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고58,485

-

60V

160mA (Ta)

4.2Ohm @ 160mA, 10V

1.5V @ 250µA

0.7nC @ 4.5V

15pF @ 15V

223mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

HS8K1TB

Rohm Semiconductor

MOSFET 2N-CH 30V 10A/11A HSML

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: HSML3030L10

패키지: -

재고31,440

-

30V

10A (Ta), 11A (Ta)

14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V

2.5V @ 1mA

6nC @ 10V, 7.4nC @ 10V

348pF @ 15V, 429pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-UDFN Exposed Pad

HSML3030L10

FDMS3622SF121

onsemi

MOSFET N-CHANNEL POWER56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-