페이지 49 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  49/203
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설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7338PBF
Infineon Technologies

MOSFET N/P-CH 12V 6.3A/3A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고64,632
Logic Level Gate
12V
6.3A, 3A
34 mOhm @ 6A, 4.5V
1.5V @ 250µA
8.6nC @ 4.5V
640pF @ 9V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
2N7002PS/ZLX
Nexperia USA Inc.

MOSFET SS SC-88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,232
-
-
-
-
-
-
-
-
-
-
-
-
AO4818BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,584
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
패키지: SOT-563, SOT-666
재고3,168
Logic Level Gate
20V
800mA
240 mOhm @ 500mA, 4.5V
1V @ 1mA
2nC @ 4.5V
90pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
FDZ2553NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.6A BGA

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 18-WFBGA
  • Supplier Device Package: 18-BGA (2.5x4)
패키지: 18-WFBGA
재고7,824
Logic Level Gate
20V
9.6A
14 mOhm @ 9.6A, 4.5V
1.5V @ 250µA
18nC @ 5V
1240pF @ 10V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
18-WFBGA
18-BGA (2.5x4)
hot NDS9958
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고138,432
Logic Level Gate
20V
3.5A
100 mOhm @ 3.5A, 10V
3V @ 250µA
30nC @ 10V
525pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQ4284EY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power - Max: 3.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,624
Logic Level Gate
40V
-
13.5 mOhm @ 7A, 10V
2.5V @ 250µA
45nC @ 10V
2200pF @ 25V
3.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SH8M14TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,432
Logic Level Gate
30V
9A, 7A
21 mOhm @ 9A, 10V
2.5V @ 1mA
8.5nC @ 5V
630pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot AON6934A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A, 30A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
  • Power - Max: 3.6W, 4.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerVDFN
재고732,852
Logic Level Gate
30V
22A, 30A
5.2 mOhm @ 20A, 10V
2.2V @ 250µA
22nC @ 10V
1037pF @ 15V
3.6W, 4.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
NX138BKWF
Nexperia USA Inc.

NX138BKW/SOT323/SC-70

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,880
-
-
-
-
-
-
-
-
-
-
-
-
SC8673010L
Panasonic Electronic Components

MOSFET 2N-CH 30V 16A/40A 8-HSO

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 40A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 4.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • Power - Max: 1.7W, 2.5W
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-HSO
패키지: 8-PowerSMD, Flat Leads
재고2,832
Logic Level Gate
30V
16A, 40A
10 mOhm @ 8A, 10V
3V @ 4.38mA
6.3nC @ 4.5V
5180pF @ 10V
1.7W, 2.5W
-40°C ~ 85°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-HSO
DMHC6070LSD-13
Diodes Incorporated

MOSFET 2N/2P-CHA 60V 3.1A 8SO

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,376
Standard
60V
3.1A, 2.4A
100 mOhm @ 1A, 10V
3V @ 250µA
11.5nC @ 10V
731pF @ 20V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CSD88539ND
Texas Instruments

MOSFET 2N-CH 60V 15A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,448
Standard
60V
15A
28 mOhm @ 5A, 10V
3.6V @ 250µA
9.4nC @ 10V
741pF @ 30V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI7913DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 5A PPAK 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
패키지: PowerPAK? 1212-8 Dual
재고73,740
Logic Level Gate
20V
5A
37 mOhm @ 7.4A, 4.5V
1V @ 250µA
24nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot FDS6990AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고68,268
Logic Level Gate
30V
7.5A
22 mOhm @ 7.5A, 10V
3V @ 1mA
14nC @ 5V
550pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3932DV-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 3.7A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: SOT-23-6 Thin, TSOT-23-6
재고652,572
Logic Level Gate
30V
3.7A
58 mOhm @ 3.4A, 10V
2.2V @ 250µA
6nC @ 10V
235pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
AON7804
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (3x3)
패키지: 8-PowerSMD, Flat Leads
재고1,848,270
Logic Level Gate
30V
9A
21 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (3x3)
PJQ4848P_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 9A/37A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
  • Power - Max: 2W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: DFN3333B-8
패키지: -
재고10,833
-
40V
9A (Ta), 37A (Tc)
15mOhm @ 8A, 10V
2.5V @ 250µA
10nC @ 4.5V
1040pF @ 20V
2W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
DFN3333B-8
PJS6832_S2_00001
Panjit International Inc.

MOSFET 2N-CH 30V 1.6A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: -
Request a Quote
-
30V
1.6A (Ta)
200mOhm @ 1.6A, 4.5V
1.3V @ 250µA
1.5nC @ 4.5V
93pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMN3013LDG-13
Diodes Incorporated

MOSFET 2N-CH 30V 9.5A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2.16W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
패키지: -
Request a Quote
-
30V
9.5A (Ta), 15A (Tc)
14.3mOhm @ 4A, 8V
1.2V @ 250µA
5.7nC @ 4.5V
600pF @ 15V
2.16W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
IRFHS9351TR2PBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerVDFN
  • Supplier Device Package: 6-PQFN Dual (2x2)
패키지: -
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Logic Level Gate
30V
2.3A
170mOhm @ 3.1A, 10V
2.4V @ 10µA
3.7nC @ 10V
160pF @ 25V
1.4W
-
Surface Mount
6-PowerVDFN
6-PQFN Dual (2x2)
AOCA24108E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 14A 6ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-AlphaDFN (1.79x1.18)
패키지: -
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12V
14A (Ta)
7.5mOhm @ 4A, 4.5V
1.1V @ 250µA
15nC @ 4.5V
-
2.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-AlphaDFN (1.79x1.18)
MSCSM70TLM05CAG
Microchip Technology

SIC 4N-CH 700V 464A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
  • Power - Max: 1277W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
패키지: -
재고15
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700V
464A (Tc)
4.8mOhm @ 160A, 20V
2.4V @ 16mA
860nC @ 20V
18000pF @ 700V
1277W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
DMNH4011SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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DMN3190LDWQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
  • Power - Max: 320mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
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30V
1A (Ta)
190mOhm @ 1.3A, 10V
2.8V @ 250µA
2nC @ 10V
87pF @ 20V
320mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
FTD2015-TL-E
onsemi

NCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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DMTH4014LDVWQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 10.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Power - Max: 1.16W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
패키지: -
재고8,970
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40V
10.2A (Ta), 27.5A (Tc)
15mOhm @ 20A, 10V
3V @ 250µA
11.2nC @ 10V
750pF @ 20V
1.16W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
MSCSM120AM027CT6AG
Microchip Technology

SIC 2N-CH 1200V 733A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
  • Power - Max: 2.97kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
패키지: -
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1200V (1.2kV)
733A (Tc)
3.5mOhm @ 360A, 20V
2.8V @ 9mA
2088nC @ 20V
27000pF @1000V
2.97kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C