페이지 48 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7901D1TR	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고63,732	Logic Level Gate	30V	6.2A	38 mOhm @ 5A, 4.5V	1V @ 250µA	10.5nC @ 5V	780pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA2670T1R-E2-AX	Renesas Electronics America	MOSFET 2P-CH 20V 3A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	패키지: 6-WFDFN Exposed Pad	재고5,232	Logic Level Gate, 1.8V Drive	20V	3A	79 mOhm @ 1.5A, 4.5V	-	5.1nC @ 4.5V	473pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
SI4544DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,856	Logic Level Gate	30V	-	35 mOhm @ 6.5A, 10V	1V @ 250µA (Min)	35nC @ 10V	-	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6993DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3.6A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고85,908	Logic Level Gate	30V	3.6A	31 mOhm @ 4.7A, 10V	3V @ 250µA	20nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI9934BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 4.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고456,828	Logic Level Gate	12V	4.8A	35 mOhm @ 6.4A, 4.5V	1.4V @ 250µA	20nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTQD6866R2G	ON Semiconductor	MOSFET 2N-CH 20V 4.7A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Power - Max: 940mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,256	Logic Level Gate	20V	4.7A	32 mOhm @ 6.9A, 4.5V	1.2V @ 250µA	22nC @ 4.5V	1400pF @ 16V	940mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
STS3C2F100	STMicroelectronics	MOSFET N/P-CH 100V 3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,360	Logic Level Gate	100V	3A	145 mOhm @ 1.5A, 10V	2V @ 250µA	20nC @ 10V	460pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VMK165-007T	IXYS	MOSFET 2N-CH 70V 165A TO-240AA FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 165A Rds On (Max) @ Id, Vgs: 7 mOhm @ 82.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA Supplier Device Package: TO-240AA	패키지: TO-240AA	재고3,216	Standard	70V	165A	7 mOhm @ 82.5A, 10V	4V @ 8mA	480nC @ 10V	8800pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	TO-240AA	TO-240AA
ALD210814PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고5,008	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	-	-	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SP8M4FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/7A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,128	Logic Level Gate	30V	9A, 7A	18 mOhm @ 9A, 10V	2.5V @ 1mA	21nC @ 5V	1190pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMP2004DWK-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.43A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고912,780	Logic Level Gate	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	-	175pF @ 16V	250mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AO6601	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 6-TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고11,386,968	Logic Level Gate	30V	3.4A, 2.3A	60 mOhm @ 3.4A, 10V	1.5V @ 250µA	12nC @ 10V	285pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
BUK9K18-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 30A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고7,312	Logic Level Gate	40V	30A	16 mOhm @ 10A, 10V	2.1V @ 1mA	14.5nC @ 10V	1061pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
2N7002DW	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 0.115A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고2,247,348	Logic Level Gate	60V	115mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
STS9D8NH3LL	STMicroelectronics	MOSFET 2N-CH 30V 8A/9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 9A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,096,416	Logic Level Gate	30V	8A, 9A	22 mOhm @ 4A, 10V	1V @ 250µA	10nC @ 4.5V	857pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL40C30H3LL	STMicroelectronics	MOSFET N/P-CH 30V POWERFLAT FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A, 30A Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V Power - Max: 60W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고5,008	Logic Level Gate	30V	40A, 30A	21 mOhm @ 4A, 10V	1V @ 250µA (Min)	4.6nC @ 4.5V	475pF @ 24V	60W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
QH8JA1TCR	Rohm Semiconductor	20V PCH+PCH MIDDLE POWER MOSFET, FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고23,028	-	30V	5A	38 mOhm @ 5A, 4.5V	1.2V @ 1mA	10.2nC @ 4.5V	720pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SI4618DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Power - Max: 1.98W, 4.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,490,928	Standard	30V	8A, 15.2A	17 mOhm @ 8A, 10V	2.5V @ 1mA	44nC @ 10V	1535pF @ 15V	1.98W, 4.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ951EP-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Power - Max: 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고17,205	-	30V	30A (Tc)	17mOhm @ 7.5A, 10V	2.5V @ 250µA	50nC @ 10V	1680pF @ 10V	56W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMP31D7LVQ-13	Diodes Incorporated	MOSFET 2P-CH 30V 0.62A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고30,000	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
UT6J3TCR1	Rohm Semiconductor	MOSFET 2P-CH 20V 3A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: DFN2020-8D	패키지: -	재고8,922	-	20V	3A (Ta)	85mOhm @ 3A, 4.5V	1V @ 1mA	8.5nC @ 4.5V	2000pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-PowerUDFN	DFN2020-8D
MSCMC170AM08CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 280A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 4V @ 108mA Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V Power - Max: 1780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	패키지: -	Request a Quote	-	1700V (1.7kV)	280A (Tc)	11.7mOhm @ 300A, 20V	4V @ 108mA	1128nC @ 20V	22000pF @ 1000V	1780W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6C LI
94-2518PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
VEC2307-TL-E	onsemi	PCH+PCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
G1K8P06S2	Goford Semiconductor	MOSFET 2P-CH 60V 3.2A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V Power - Max: 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고11,874	-	60V	3.2A (Tc)	170mOhm @ 1A, 10V	2.5V @ 250µA	11.3nC @ 10V	594pF @ 30V	2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM2538CQ-RFG	Taiwan Semiconductor Corporation	MOSFET N/P-CH 20V 5.5A/10A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V Power - Max: 1.89W (Ta), 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	패키지: -	재고35,670	-	20V	5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)	40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V	800mV @ 250µA	7.5nC @ 4.5V, 9.4nC @ 4.5V	534pF @ 10V, 909pF @ 10V	1.89W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (2x2)
FAM65CR51XZ1	onsemi	APM16-CDA SF3 650V 51MOHM ALN Y FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Power - Max: 463W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SSIP Exposed Pad, Formed Leads Supplier Device Package: APMCA-A16	패키지: -	Request a Quote	-	650V	64A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	463W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	12-SSIP Exposed Pad, Formed Leads	APMCA-A16
UM6K1NA-TPQ2	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	30V	500mA	750mOhm @ 300mA, 10V	1.5V @ 250µA	1.28nC @ 10V	28pF @ 15V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

IRF7901D1TR

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고63,732

Logic Level Gate

30V

6.2A

38 mOhm @ 5A, 4.5V

1V @ 250µA

10.5nC @ 5V

780pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UPA2670T1R-E2-AX

Renesas Electronics America

MOSFET 2P-CH 20V 3A 6HUSON

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V
Power - Max: 2.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

패키지: 6-WFDFN Exposed Pad

재고5,232

Logic Level Gate, 1.8V Drive

20V

3A

79 mOhm @ 1.5A, 4.5V

-

5.1nC @ 4.5V

473pF @ 10V

2.3W

150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-HUSON (2x2)

SI4544DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,856

Logic Level Gate

30V

-

35 mOhm @ 6.5A, 10V

1V @ 250µA (Min)

35nC @ 10V

-

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6993DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3.6A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고85,908

Logic Level Gate

30V

3.6A

31 mOhm @ 4.7A, 10V

3V @ 250µA

20nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI9934BDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 4.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고456,828

Logic Level Gate

12V

4.8A

35 mOhm @ 6.4A, 4.5V

1.4V @ 250µA

20nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTQD6866R2G

ON Semiconductor

MOSFET 2N-CH 20V 4.7A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
Power - Max: 940mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,256

Logic Level Gate

20V

4.7A

32 mOhm @ 6.9A, 4.5V

1.2V @ 250µA

22nC @ 4.5V

1400pF @ 16V

940mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

STS3C2F100

STMicroelectronics

MOSFET N/P-CH 100V 3A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,360

Logic Level Gate

100V

3A

145 mOhm @ 1.5A, 10V

2V @ 250µA

20nC @ 10V

460pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VMK165-007T

IXYS

MOSFET 2N-CH 70V 165A TO-240AA

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 165A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 82.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Supplier Device Package: TO-240AA

패키지: TO-240AA

재고3,216

Standard

70V

165A

7 mOhm @ 82.5A, 10V

4V @ 8mA

480nC @ 10V

8800pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

TO-240AA

ALD210814PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고5,008

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SP8M4FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,128

Logic Level Gate

30V

9A, 7A

18 mOhm @ 9A, 10V

2.5V @ 1mA

21nC @ 5V

1190pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMP2004DWK-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.43A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 250mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고912,780

Logic Level Gate

20V

430mA

900 mOhm @ 430mA, 4.5V

1V @ 250µA

-

175pF @ 16V

250mW

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

AO6601

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고11,386,968

Logic Level Gate

30V

3.4A, 2.3A

60 mOhm @ 3.4A, 10V

1.5V @ 250µA

12nC @ 10V

285pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

BUK9K18-40E,115

Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고7,312

Logic Level Gate

40V

30A

16 mOhm @ 10A, 10V

2.1V @ 1mA

14.5nC @ 10V

1061pF @ 25V

38W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

2N7002DW

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.115A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고2,247,348

Logic Level Gate

60V

115mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

STS9D8NH3LL

STMicroelectronics

MOSFET 2N-CH 30V 8A/9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 9A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,096,416

Logic Level Gate

30V

8A, 9A

22 mOhm @ 4A, 10V

1V @ 250µA

10nC @ 4.5V

857pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL40C30H3LL

STMicroelectronics

MOSFET N/P-CH 30V POWERFLAT

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A, 30A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
Power - Max: 60W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고5,008

Logic Level Gate

30V

40A, 30A

21 mOhm @ 4A, 10V

1V @ 250µA (Min)

4.6nC @ 4.5V

475pF @ 24V

60W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

QH8JA1TCR

Rohm Semiconductor

20V PCH+PCH MIDDLE POWER MOSFET,

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고23,028

-

30V

5A

38 mOhm @ 5A, 4.5V

1.2V @ 1mA

10.2nC @ 4.5V

720pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SI4618DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Power - Max: 1.98W, 4.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,490,928

Standard

30V

8A, 15.2A

17 mOhm @ 8A, 10V

2.5V @ 1mA

44nC @ 10V

1535pF @ 15V

1.98W, 4.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ951EP-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고17,205

-

30V

30A (Tc)

17mOhm @ 7.5A, 10V

2.5V @ 250µA

50nC @ 10V

1680pF @ 10V

56W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

DMP31D7LVQ-13

Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고30,000

-

30V

620mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

UT6J3TCR1

Rohm Semiconductor

MOSFET 2P-CH 20V 3A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: DFN2020-8D

패키지: -

재고8,922

-

20V

3A (Ta)

85mOhm @ 3A, 4.5V

1V @ 1mA

8.5nC @ 4.5V

2000pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-PowerUDFN

DFN2020-8D

MSCMC170AM08CT6LIAG

Microchip Technology

SIC 2N-CH 1700V 280A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 4V @ 108mA
Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
Power - Max: 1780W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

패키지: -

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-

1700V (1.7kV)

280A (Tc)

11.7mOhm @ 300A, 20V

4V @ 108mA

1128nC @ 20V

22000pF @ 1000V

1780W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP6C LI

94-2518PBF

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

VEC2307-TL-E

onsemi

PCH+PCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

G1K8P06S2

Goford Semiconductor

MOSFET 2P-CH 60V 3.2A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Power - Max: 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고11,874

-

60V

3.2A (Tc)

170mOhm @ 1A, 10V

2.5V @ 250µA

11.3nC @ 10V

594pF @ 30V

2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TSM2538CQ-RFG

Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 5.5A/10A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Power - Max: 1.89W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)

패키지: -

재고35,670

-

20V

5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)

40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V

800mV @ 250µA

7.5nC @ 4.5V, 9.4nC @ 4.5V

534pF @ 10V, 909pF @ 10V

1.89W (Ta), 5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (2x2)

FAM65CR51XZ1

onsemi

APM16-CDA SF3 650V 51MOHM ALN Y

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Power - Max: 463W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Supplier Device Package: APMCA-A16

패키지: -

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-

650V

64A (Tc)

51mOhm @ 20A, 10V

5V @ 3.3mA

123nC @ 10V

4864pF @ 400V

463W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

12-SSIP Exposed Pad, Formed Leads

APMCA-A16

UM6K1NA-TPQ2

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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-

30V

500mA

750mOhm @ 300mA, 10V

1.5V @ 250µA

1.28nC @ 10V

28pF @ 15V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363