페이지 53 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5851TR	Infineon Technologies	MOSFET N/P-CH 20V 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고4,352	Logic Level Gate	20V	2.7A, 2.2A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF9952TR	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,389,672	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4805L_101	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,288	Logic Level Gate	30V	9A	19 mOhm @ 8A, 10V	2.8V @ 250µA	39nC @ 10V	2600pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8601M-TL-H	ON Semiconductor	MOSFET N-CH 24V 8A ECH8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고945,540	Logic Level Gate, 2.5V Drive	24V	8A (Ta)	23 mOhm @ 4A, 4.5V	1.3V @ 1mA	7.5nC @ 4.5V	-	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
VQ2001P-2	Vishay Siliconix	MOSFET 4P-CH 30V 0.6A 14DIP FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP Supplier Device Package: 14-DIP	패키지: 14-DIP	재고9,420	Standard	30V	600mA	2 Ohm @ 1A, 12V	4.5V @ 1mA	-	150pF @ 15V	2W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP	14-DIP
AO4924	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9A/7.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고850,500	Logic Level Gate	30V	-	15.8 mOhm @ 9A, 10V	2.4V @ 250µA	31nC @ 10V	1885pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4940DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 4.2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,312	Logic Level Gate	40V	4.2A	36 mOhm @ 5.7A, 10V	1V @ 250µA (Min)	14nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60BBM24T3G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP3F FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고2,672	Standard	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	-	SP3	SP3
GMM3X180-004X2-SMD	IXYS	MOSFET 6N-CH 40V 180A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	패키지: 24-SMD, Gull Wing	재고2,080	Standard	40V	180A	-	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
GMM3X60-015X2-SMDSAM	IXYS	MOSFET 6N-CH 150V 50A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL? Supplier Device Package: ISOPLUS-DIL?	패키지: ISOPLUS-DIL?	재고6,480	Standard	150V	50A	24 mOhm @ 38A, 10V	4.5V @ 1mA	97nC @ 10V	5800pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL?	ISOPLUS-DIL?
SI4943BDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고202,800	Logic Level Gate	20V	6.3A	19 mOhm @ 8.4A, 10V	3V @ 250µA	25nC @ 5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP2160UFDBQ-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.8A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고2,480	Standard	20V	3.8A	70 mOhm @ 2.8A, 4.5V	900mV @ 250µA	6.5nC @ 4.5V	536pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMG1016VQ-13	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Power - Max: 530mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고5,952	Logic Level Gate	20V	870mA, 640mA	400 mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	530mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ALD110914SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,968	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMC10A816N8TC	Diodes Incorporated	MOSFET N/P-CH 100V 2A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 230 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,888	Logic Level Gate	100V	2A	230 mOhm @ 1A, 10V	2.4V @ 250µA	9.2nC @ 10V	497pF @ 50V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QS8J1TR	Rohm Semiconductor	MOSFET 2P-CH 12V 4.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고5,168	Logic Level Gate	12V	4.5A	29 mOhm @ 4.5A, 4.5V	1V @ 1mA	31nC @ 4.5V	2450pF @ 6V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
CSD86330Q3D	Texas Instruments	MOSFET 2N-CH 25V 20A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 14A, 8V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	패키지: 8-PowerLDFN	재고666,252	Logic Level Gate	25V	20A	9.6 mOhm @ 14A, 8V	2.1V @ 250µA	6.2nC @ 4.5V	920pF @ 12.5V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
SI1539DDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	30V	700mA (Tc), 460mA (Tc)	388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.1nC @ 4.5V, 1.2nC @ 4.5V	28pF @ 15V, 21pF @ 15V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMT3022UEV-7	Diodes Incorporated	MOSFET 2N-CH 30V 17A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	패키지: -	Request a Quote	-	30V	17A (Tc)	22mOhm @ 11A, 10V	1.8V @ 250µA	13.9nC @ 10V	903pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
MMFTN6190KDW	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Power - Max: 320mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	30V	1A (Ta)	280mOhm @ 1.3A, 10V	2.8V @ 250µA	2nC @ 10V	87pF @ 20V	320mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	SOT-363
MSCSM70AM025T6LIAG	Microchip Technology	SIC 2N-CH 700V 689A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1.882kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
DMN31D5UDAQ-7B	Diodes Incorporated	MOSFET 2N-CH 30V 0.4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	Request a Quote	-	30V	400mA (Ta)	1.5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
HUF75639S3ST_Q	Fairchild Semiconductor	MOSFET N-CH 100V 56A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
WAS300M12BM2	Wolfspeed, Inc.	SIC 2N-CH 1200V 423A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19300pF @ 600V Power - Max: 1.668kW (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	-	1200V (1.2kV)	423A (Tc)	5.3mOhm @ 300A, 20V	2.5V @ 15mA	1025nC @ 20V	19300pF @ 600V	1.668kW (Tc)	150°C (TJ)	Chassis Mount	Module	Module
UT6MC5TCR	Rohm Semiconductor	MOSFET 60V 3.5A/2.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	패키지: -	재고14,970	-	60V	3.5A (Ta), 2.5A (Ta)	95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V	2.5V @ 1mA	-	-	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
DMC2053UVTQ-13	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고30,000	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SQJ992EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	60V	15A (Tc)	56.2mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMN2036UCB4-7	Diodes Incorporated	MOSFET 2N-CH X2-WLB1616 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X2-WLB1616-4	패키지: -	재고9,000	-	-	-	-	-	12.6nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLBGA	X2-WLB1616-4

IRF5851TR

Infineon Technologies

MOSFET N/P-CH 20V 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고4,352

Logic Level Gate

20V

2.7A, 2.2A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF9952TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,389,672

Logic Level Gate

30V

3.5A, 2.3A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4805L_101

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,288

Logic Level Gate

30V

9A

19 mOhm @ 8A, 10V

2.8V @ 250µA

39nC @ 10V

2600pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8601M-TL-H

ON Semiconductor

MOSFET N-CH 24V 8A ECH8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고945,540

Logic Level Gate, 2.5V Drive

24V

8A (Ta)

23 mOhm @ 4A, 4.5V

1.3V @ 1mA

7.5nC @ 4.5V

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

VQ2001P-2

Vishay Siliconix

MOSFET 4P-CH 30V 0.6A 14DIP

FET Type: 4 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP
Supplier Device Package: 14-DIP

패키지: 14-DIP

재고9,420

Standard

30V

600mA

2 Ohm @ 1A, 12V

4.5V @ 1mA

-

150pF @ 15V

2W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP

AO4924

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A/7.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고850,500

Logic Level Gate

30V

-

15.8 mOhm @ 9A, 10V

2.4V @ 250µA

31nC @ 10V

1885pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI4940DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 4.2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,312

Logic Level Gate

40V

4.2A

36 mOhm @ 5.7A, 10V

1V @ 250µA (Min)

14nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60BBM24T3G

Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3F

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고2,672

Standard

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

-

SP3

GMM3X180-004X2-SMD

IXYS

MOSFET 6N-CH 40V 180A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

패키지: 24-SMD, Gull Wing

재고2,080

Standard

40V

180A

-

4.5V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

GMM3X60-015X2-SMDSAM

IXYS

MOSFET 6N-CH 150V 50A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?

패키지: ISOPLUS-DIL?

재고6,480

Standard

150V

50A

24 mOhm @ 38A, 10V

4.5V @ 1mA

97nC @ 10V

5800pF @ 25V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL?

SI4943BDY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 6.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고202,800

Logic Level Gate

20V

6.3A

19 mOhm @ 8.4A, 10V

3V @ 250µA

25nC @ 5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP2160UFDBQ-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고2,480

Standard

20V

3.8A

70 mOhm @ 2.8A, 4.5V

900mV @ 250µA

6.5nC @ 4.5V

536pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMG1016VQ-13

Diodes Incorporated

MOSFET N/P-CH 20V SOT563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Power - Max: 530mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고5,952

Logic Level Gate

20V

870mA, 640mA

400 mOhm @ 600mA, 4.5V

1V @ 250µA

0.74nC @ 4.5V

60.67pF @ 16V

530mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ALD110914SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,968

Standard

10.6V

12mA, 3mA

500 Ohm @ 5.4V

1.42V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ZXMC10A816N8TC

Diodes Incorporated

MOSFET N/P-CH 100V 2A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,888

Logic Level Gate

100V

2A

230 mOhm @ 1A, 10V

2.4V @ 250µA

9.2nC @ 10V

497pF @ 50V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QS8J1TR

Rohm Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고5,168

Logic Level Gate

12V

4.5A

29 mOhm @ 4.5A, 4.5V

1V @ 1mA

31nC @ 4.5V

2450pF @ 6V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

CSD86330Q3D

Texas Instruments

MOSFET 2N-CH 25V 20A 8SON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

패키지: 8-PowerLDFN

재고666,252

Logic Level Gate

25V

20A

9.6 mOhm @ 14A, 8V

2.1V @ 250µA

6.2nC @ 4.5V

920pF @ 12.5V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

SI1539DDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

Request a Quote

-

30V

700mA (Tc), 460mA (Tc)

388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V

2.5V @ 250µA, 3V @ 250µA

1.1nC @ 4.5V, 1.2nC @ 4.5V

28pF @ 15V, 21pF @ 15V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMT3022UEV-7

Diodes Incorporated

MOSFET 2N-CH 30V 17A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

패키지: -

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30V

17A (Tc)

22mOhm @ 11A, 10V

1.8V @ 250µA

13.9nC @ 10V

903pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

MMFTN6190KDW

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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30V

1A (Ta)

280mOhm @ 1.3A, 10V

2.8V @ 250µA

2nC @ 10V

87pF @ 20V

320mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

SOT-363

MSCSM70AM025T6LIAG

Microchip Technology

SIC 2N-CH 700V 689A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Power - Max: 1.882kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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700V

689A (Tc)

3.2mOhm @ 240A, 20V

2.4V @ 24mA

1290nC @ 20V

27000pF @ 700V

1.882kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

DMN31D5UDAQ-7B

Diodes Incorporated

MOSFET 2N-CH 30V 0.4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

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30V

400mA (Ta)

1.5Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V

22.6pF @ 15V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

HUF75639S3ST_Q

Fairchild Semiconductor

MOSFET N-CH 100V 56A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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WAS300M12BM2

Wolfspeed, Inc.

SIC 2N-CH 1200V 423A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19300pF @ 600V
Power - Max: 1.668kW (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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1200V (1.2kV)

423A (Tc)

5.3mOhm @ 300A, 20V

2.5V @ 15mA

1025nC @ 20V

19300pF @ 600V

1.668kW (Tc)

150°C (TJ)

Chassis Mount

Module

UT6MC5TCR

Rohm Semiconductor

MOSFET 60V 3.5A/2.5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

패키지: -

재고14,970

-

60V

3.5A (Ta), 2.5A (Ta)

95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V

2.5V @ 1mA

-

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

DMC2053UVTQ-13

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고30,000

-

20V

4.6A (Ta), 3.2A (Ta)

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V, 5.9nC @ 4.5V

369pF @ 10V, 440pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SQJ992EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

60V

15A (Tc)

56.2mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

DMN2036UCB4-7

Diodes Incorporated

MOSFET 2N-CH X2-WLB1616

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.45W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLBGA
Supplier Device Package: X2-WLB1616-4

패키지: -

재고9,000

-

12.6nC @ 4.5V

-

1.45W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, WLBGA

X2-WLB1616-4