페이지 54 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO203PNTMA1	Infineon Technologies	MOSFET 2P-CH 20V 8.2A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2242pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,496	Logic Level Gate	20V	8.2A	21 mOhm @ 8.2A, 4.5V	1.2V @ 100µA	48.6nC @ 4.5V	2242pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
AO5800E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 0.4A SC89-6L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 30V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고51,192	Logic Level Gate	60V	-	1.6 Ohm @ 400mA, 10V	2.5V @ 250µA	-	50pF @ 30V	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
MP6K12TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 5A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	패키지: 6-SMD, Flat Leads	재고5,072	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	4nC @ 5V	250pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SIA911DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고318,240	Standard	20V	4.5A	94 mOhm @ 2.8A, 4.5V	1V @ 250µA	12.8nC @ 8V	355pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI4972DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 10.8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power - Max: 3.1W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고36,360	Standard	30V	10.8A, 7.2A	14.5 mOhm @ 6A, 10V	3V @ 250µA	28nC @ 10V	1080pF @ 15V	3.1W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60DDAM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고5,104	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI7958DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 7.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고297,720	Logic Level Gate	40V	7.2A	16.5 mOhm @ 11.3A, 10V	3V @ 250µA	75nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI1553DL-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고1,019,820	Logic Level Gate	20V	660mA, 410mA	385 mOhm @ 660mA, 4.5V	600mV @ 250µA (Min)	1.2nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
PMGD400UN,115	NXP	MOSFET 2N-CH 30V 0.71A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 710mA Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Power - Max: 410mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고3,536	Logic Level Gate	30V	710mA	480 mOhm @ 200mA, 4.5V	1V @ 250µA	0.89nC @ 4.5V	43pF @ 25V	410mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
AON3814	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 8DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 17 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	패키지: 8-SMD, Flat Lead	재고119,988	Logic Level Gate	20V	-	17 mOhm @ 6A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
FDMS3622S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/34A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 34A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고7,520	Logic Level Gate	25V	17.5A, 34A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMC4050SSDQ-13	Diodes Incorporated	MOSFET N/P-CH 40V 5.3A 8SO FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,376	Standard	40V	5.3A	45 mOhm @ 3A, 10V	1.8V @ 250µA	37.56nC @ 10V	1790.8pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3026LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.5A/6.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,008	Logic Level Gate	30V	6.5A, 6.2A	25 mOhm @ 6A, 10V	3V @ 250µA	13.2nC @ 10V	641pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MCCD2005-TP	Micro Commercial Co	MOSFET 2N-CH 20V 8A FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: DFN2030-6	패키지: 6-WFDFN Exposed Pad	재고6,784	Standard	20V	8A	13 mOhm @ 8A, 10V	1V @ 250µA	17.9nC @ 4.5V	1800pF @ 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	DFN2030-6
FDS9958_F085	Fairchild/ON Semiconductor	MOSFET 2P-CH 60V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고25,554	Logic Level Gate	60V	2.9A	105 mOhm @ 2.9A, 10V	3V @ 250µA	23nC @ 10V	1020pF @ 30V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA1028NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3.7A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고244,380	Logic Level Gate	20V	3.7A	68 mOhm @ 3.7A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	340pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
NVMFD5C668NLT1G	onsemi	MOSFET 2N-CH 60V 15.5A/68A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Power - Max: 3W (Ta), 57.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	재고5,010	-	60V	15.5A (Ta), 68A (Tc)	6.5mOhm @ 20A, 10V	2V @ 50µA	21.3nC @ 10V	1440pF @ 25V	3W (Ta), 57.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF8MR12W1M1HB11BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
TSM200N03DPQ33	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 20A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PDFN (3x3)	패키지: -	Request a Quote	-	30V	20A (Tc)	20mOhm @ 10A, 10V	2.5V @ 250µA	4.1nC @ 4.5V	345pF @ 25V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PDFN (3x3)
PMCXB290UEZ	Nexperia USA Inc.	MOSFET N/P-CH 20V 0.93A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V Power - Max: 280mW (Ta), 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	패키지: -	재고13,710	-	20V	930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)	320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V	1V @ 250µA	0.9nC @ 4.5V, 0.8nC @ 4.5V	43.6pF @ 10V, 53.5pF @ 10V	280mW (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
DMN3190LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Power - Max: 320mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	30V	1A (Ta)	190mOhm @ 1.3A, 10V	2.8V @ 250µA	2nC @ 10V	87pF @ 20V	320mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
2SJ172-E	Renesas Electronics Corporation	MOSFET P-CH 60V 10A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3071LVT-13	Diodes Incorporated	MOSFET N/P-CH 30V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고30,000	-	30V	4.6A (Ta), 3.3A (Ta)	50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V	2.5V @ 250µA	4.5nC @ 10V, 6.5nC @ 10V	190pF @ 15V, 254pF @ 15V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN62D2UVT-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	60V	455mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
MSCSM70VM10C4AG	Microchip Technology	SIC 2N-CH 700V 238A SP4 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP4	패키지: -	재고3	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP4
TPIC1533DWR	Texas Instruments	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3061SVTQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	3.4A (Ta), 2.7A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.2V @ 250µA	6.6nC @ 10V, 6.8nC @ 10V	278pF @ 15V, 287pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
HP8MB5TB1	Rohm Semiconductor	40V 16.5A, DUAL NCH+PCH, HSOP8, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Power - Max: 3W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	패키지: -	재고7,500	-	40V	6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)	46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V	2.5V @ 1mA	3.5nC @ 10V, 17.2nC @ 10V	150pF @ 20V, 920pF @ 20V	3W (Ta), 20W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP

BSO203PNTMA1

Infineon Technologies

MOSFET 2P-CH 20V 8.2A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2242pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,496

Logic Level Gate

20V

8.2A

21 mOhm @ 8.2A, 4.5V

1.2V @ 100µA

48.6nC @ 4.5V

2242pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

AO5800E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 0.4A SC89-6L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 30V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고51,192

Logic Level Gate

60V

-

1.6 Ohm @ 400mA, 10V

2.5V @ 250µA

-

50pF @ 30V

400mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

MP6K12TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 5A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

패키지: 6-SMD, Flat Leads

재고5,072

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

4nC @ 5V

250pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

SIA911DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고318,240

Standard

20V

4.5A

94 mOhm @ 2.8A, 4.5V

1V @ 250µA

12.8nC @ 8V

355pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI4972DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 10.8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Power - Max: 3.1W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고36,360

Standard

30V

10.8A, 7.2A

14.5 mOhm @ 6A, 10V

3V @ 250µA

28nC @ 10V

1080pF @ 15V

3.1W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60DDAM70T3G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고5,104

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI7958DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 7.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고297,720

Logic Level Gate

40V

7.2A

16.5 mOhm @ 11.3A, 10V

3V @ 250µA

75nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI1553DL-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고1,019,820

Logic Level Gate

20V

660mA, 410mA

385 mOhm @ 660mA, 4.5V

600mV @ 250µA (Min)

1.2nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

PMGD400UN,115

NXP

MOSFET 2N-CH 30V 0.71A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 710mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
Power - Max: 410mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고3,536

Logic Level Gate

30V

710mA

480 mOhm @ 200mA, 4.5V

1V @ 250µA

0.89nC @ 4.5V

43pF @ 25V

410mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

AON3814

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 8DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 17 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

패키지: 8-SMD, Flat Lead

재고119,988

Logic Level Gate

20V

-

17 mOhm @ 6A, 4.5V

1.1V @ 250µA

13nC @ 4.5V

1100pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

FDMS3622S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/34A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 34A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고7,520

Logic Level Gate

25V

17.5A, 34A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

DMC4050SSDQ-13

Diodes Incorporated

MOSFET N/P-CH 40V 5.3A 8SO

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,376

Standard

40V

5.3A

45 mOhm @ 3A, 10V

1.8V @ 250µA

37.56nC @ 10V

1790.8pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3026LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/6.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,008

Logic Level Gate

30V

6.5A, 6.2A

25 mOhm @ 6A, 10V

3V @ 250µA

13.2nC @ 10V

641pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MCCD2005-TP

Micro Commercial Co

MOSFET 2N-CH 20V 8A

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: DFN2030-6

패키지: 6-WFDFN Exposed Pad

재고6,784

Standard

20V

8A

13 mOhm @ 8A, 10V

1V @ 250µA

17.9nC @ 4.5V

1800pF @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

DFN2030-6

FDS9958_F085

Fairchild/ON Semiconductor

MOSFET 2P-CH 60V 2.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고25,554

Logic Level Gate

60V

2.9A

105 mOhm @ 2.9A, 10V

3V @ 250µA

23nC @ 10V

1020pF @ 30V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA1028NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.7A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고244,380

Logic Level Gate

20V

3.7A

68 mOhm @ 3.7A, 4.5V

1.5V @ 250µA

6nC @ 4.5V

340pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

NVMFD5C668NLT1G

onsemi

MOSFET 2N-CH 60V 15.5A/68A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Power - Max: 3W (Ta), 57.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

패키지: -

재고5,010

-

60V

15.5A (Ta), 68A (Tc)

6.5mOhm @ 20A, 10V

2V @ 50µA

21.3nC @ 10V

1440pF @ 25V

3W (Ta), 57.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FF8MR12W1M1HB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

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-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

TSM200N03DPQ33

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 20A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (3x3)

패키지: -

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-

30V

20A (Tc)

20mOhm @ 10A, 10V

2.5V @ 250µA

4.1nC @ 4.5V

345pF @ 25V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PDFN (3x3)

PMCXB290UEZ

Nexperia USA Inc.

MOSFET N/P-CH 20V 0.93A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V
Power - Max: 280mW (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

패키지: -

재고13,710

-

20V

930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)

320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V

1V @ 250µA

0.9nC @ 4.5V, 0.8nC @ 4.5V

43.6pF @ 10V, 53.5pF @ 10V

280mW (Ta), 6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

DMN3190LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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-

30V

1A (Ta)

190mOhm @ 1.3A, 10V

2.8V @ 250µA

2nC @ 10V

87pF @ 20V

320mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

2SJ172-E

Renesas Electronics Corporation

MOSFET P-CH 60V 10A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMC3071LVT-13

Diodes Incorporated

MOSFET N/P-CH 30V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고30,000

-

30V

4.6A (Ta), 3.3A (Ta)

50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V

2.5V @ 250µA

4.5nC @ 10V, 6.5nC @ 10V

190pF @ 15V, 254pF @ 15V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN62D2UVT-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

60V

455mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

MSCSM70VM10C4AG

Microchip Technology

SIC 2N-CH 700V 238A SP4

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 674W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP4

패키지: -

재고3

-

700V

238A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

674W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP4

TPIC1533DWR

Texas Instruments

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMC3061SVTQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Power - Max: 880mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

30V

3.4A (Ta), 2.7A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.2V @ 250µA

6.6nC @ 10V, 6.8nC @ 10V

278pF @ 15V, 287pF @ 15V

880mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

HP8MB5TB1

Rohm Semiconductor

40V 16.5A, DUAL NCH+PCH, HSOP8,

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Power - Max: 3W (Ta), 20W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

패키지: -

재고7,500

-

40V

6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)

46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V

2.5V @ 1mA

3.5nC @ 10V, 17.2nC @ 10V

150pF @ 20V, 920pF @ 20V

3W (Ta), 20W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP