페이지 56 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NSTJD1155LT1G	ON Semiconductor	MOSFET 2P-CH 8V 1.3A SC88 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,720	-	-	-	-	-	-	-	-	-	-	-	-
SI9936DY,518	NXP	MOSFET 2N-CH 30V 5A SOT96-1 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,248	Logic Level Gate	30V	5A	50 mOhm @ 5A, 10V	1V @ 250µA	35nC @ 10V	-	900mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NDS8858H	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고97,476	Logic Level Gate	30V	6.3A, 4.8A	35 mOhm @ 4.8A, 10V	2.8V @ 250µA	30nC @ 10V	720pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7317PBF	Infineon Technologies	MOSFET N/P-CH 20V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,152	Logic Level Gate	20V	6.6A, 5.3A	29 mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFHS9351TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 2.3A PQFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2)	패키지: 6-VQFN	재고299,256	Logic Level Gate	30V	2.3A	170 mOhm @ 3.1A, 10V	2.4V @ 10µA	3.7nC @ 10V	160pF @ 25V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-VQFN	6-PQFN (2x2)
ALD212904SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,504	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TPS1120DG4	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 840mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,840	Logic Level Gate	15V	1.17A	180 mOhm @ 1.5A, 10V	1.5V @ 250µA	5.45nC @ 10V	-	840mW	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON4605	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 4.3A/3.4A 8DFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x2)	패키지: 8-SMD, Flat Lead	재고61,212	Logic Level Gate	30V	4.3A, 3.4A	50 mOhm @ 4.3A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x2)
DMMT3906WQ-7-F	Diodes Incorporated	MOSFET 2PCH 40V 200MA SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고6,896	Standard	40V	200mA	-	-	-	-	200mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SH8M41TB1	Rohm Semiconductor	MOSFET N/P-CH 80V 3.4A/2.6A SOP8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고21,264	Logic Level Gate	80V	3.4A, 2.6A	130 mOhm @ 3.4A, 10V	2.5V @ 1mA	9.2nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON7611	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 9A/18.5A 8DFN FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	패키지: 8-PowerSMD, Flat Leads	재고7,712	Logic Level Gate	30V	9A, 18.5A	50 mOhm @ 4A, 10V	2.5V @ 250µA	10nC @ 10V	170pF @ 15V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
QS8M12TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고2,208	Logic Level Gate	30V	4A	42 mOhm @ 4A, 10V	2.5V @ 1mA	3.4nC @ 5V	250pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
EM6K6T2R	Rohm Semiconductor	MOSFET 2N-CH 20V 0.3A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고2,415,960	Logic Level Gate	20V	300mA	1 Ohm @ 300mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
IRF7313PBF	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,080	Standard	30V	6.5A	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZ998DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 20A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V Power - Max: 20.2W, 32.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고11,700	-	30V	20A (Tc), 60A (Tc)	6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V	2.2V @ 250µA	8.1nC @ 4.5V, 19.8nC @ 4.5V	930pF @ 15V, 2620pF @ 15V	20.2W, 32.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
MSCSM120HM31CTBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
SIL3724A-TP	Micro Commercial Co	MOSFET N/P-CH 30V 4.5A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	패키지: -	재고8,970	-	30V	4.5A, 3.5A	35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V	2.5V @ 250µA	6.08nC @ 15V	315pF @ 10V, 365pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
FDS6900AS-G	onsemi	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	30V	6.9A, 8.2A	27mOhm @ 6.9A, 10V	3V @ 250µA, 3V @ 1mA	15nC @ 10V	600pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3139KDWA-TP	Micro Commercial Co	MOSFET 2P-CH 20V 0.6A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V Power - Max: 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고8,265	-	20V	600mA	850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.86nC @ 4.5V	40pF @ 16V	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS138AKDW-TP	Micro Commercial Co	MOSFET 2N-CH 50V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고32,208	-	50V	220mA	3Ohm @ 500mA, 10V	1.45V @ 250µA	-	22800pF @ 25V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDMW2512NZ	Fairchild Semiconductor	MOSFET 2N-CH 20V 7.2A 6MLP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-MLP (2x5)	패키지: -	Request a Quote	-	20V	7.2A (Ta)	26mOhm @ 7.2A, 4.5V	1.5V @ 250µA	13nC @ 10V	740pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-MLP (2x5)
MMFT8472DW	Diotec Semiconductor	MOSFET SOT-363 N+P 50V 0.115A 10 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	-	115mA	-	-	-	-	-	-	Surface Mount	-	SOT-363
DMN3032LFDBWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 5.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (SWP) Type B	패키지: -	Request a Quote	-	30V	5.5A (Ta)	30mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (SWP) Type B
NTD4906NAT4H	onsemi	MOSFET N-CH 30V 54A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
KFC4B21080L	Nuvoton Technology Corporation	MOSFET 12V 2.9A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-CSP (1.11x1.11)	패키지: -	Request a Quote	-	12V	2.9A (Ta)	37mOhm @ 1.5A, 4.5V	1.4V @ 1mA	7.1nC @ 4V	850pF @ 10V	350mW (Ta)	150°C	Surface Mount	4-XFLGA, CSP	4-CSP (1.11x1.11)
SQ4920EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Power - Max: 4.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고6,447	-	30V	8A (Tc)	14.5mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	1465pF @ 15V	4.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FAM65CR51DZ1	onsemi	APM16-CDA SF3 650V 51MOHM AL2O3 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Power - Max: 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SSIP Exposed Pad, Formed Leads Supplier Device Package: APMCD-B16	패키지: -	Request a Quote	-	650V	33A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	160W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	12-SSIP Exposed Pad, Formed Leads	APMCD-B16
MSCSM70XM75CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 31A (Tc), 52A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA, 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, 99nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 700V, 2010pF @ 700V Power - Max: 90W (Tc), 141W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	31A (Tc), 52A (Tc)	75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V	2.4V @ 1mA, 2.7V @ 2mA	56nC @ 20V, 99nC @ 20V	1175pF @ 700V, 2010pF @ 700V	90W (Tc), 141W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-

NSTJD1155LT1G

ON Semiconductor

MOSFET 2P-CH 8V 1.3A SC88

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,720

-

SI9936DY,518

NXP

MOSFET 2N-CH 30V 5A SOT96-1

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 900mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,248

Logic Level Gate

30V

5A

50 mOhm @ 5A, 10V

1V @ 250µA

35nC @ 10V

-

900mW

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NDS8858H

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고97,476

Logic Level Gate

30V

6.3A, 4.8A

35 mOhm @ 4.8A, 10V

2.8V @ 250µA

30nC @ 10V

720pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7317PBF

Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,152

Logic Level Gate

20V

6.6A, 5.3A

29 mOhm @ 6A, 4.5V

700mV @ 250µA

27nC @ 4.5V

900pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFHS9351TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VQFN
Supplier Device Package: 6-PQFN (2x2)

패키지: 6-VQFN

재고299,256

Logic Level Gate

30V

2.3A

170 mOhm @ 3.1A, 10V

2.4V @ 10µA

3.7nC @ 10V

160pF @ 25V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-VQFN

6-PQFN (2x2)

ALD212904SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,504

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TPS1120DG4

Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 840mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,840

Logic Level Gate

15V

1.17A

180 mOhm @ 1.5A, 10V

1.5V @ 250µA

5.45nC @ 10V

-

840mW

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AON4605

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x2)

패키지: 8-SMD, Flat Lead

재고61,212

Logic Level Gate

30V

4.3A, 3.4A

50 mOhm @ 4.3A, 10V

2.5V @ 250µA

5nC @ 10V

210pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x2)

DMMT3906WQ-7-F

Diodes Incorporated

MOSFET 2PCH 40V 200MA SOT363

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고6,896

Standard

40V

200mA

-

200mW

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SH8M41TB1

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A SOP8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고21,264

Logic Level Gate

80V

3.4A, 2.6A

130 mOhm @ 3.4A, 10V

2.5V @ 1mA

9.2nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON7611

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 9A/18.5A 8DFN

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

패키지: 8-PowerSMD, Flat Leads

재고7,712

Logic Level Gate

30V

9A, 18.5A

50 mOhm @ 4A, 10V

2.5V @ 250µA

10nC @ 10V

170pF @ 15V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

QS8M12TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4A TSMT8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고2,208

Logic Level Gate

30V

4A

42 mOhm @ 4A, 10V

2.5V @ 1mA

3.4nC @ 5V

250pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

EM6K6T2R

Rohm Semiconductor

MOSFET 2N-CH 20V 0.3A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고2,415,960

Logic Level Gate

20V

300mA

1 Ohm @ 300mA, 4V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

IRF7313PBF

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,080

Standard

30V

6.5A

29 mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIZ998DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Power - Max: 20.2W, 32.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고11,700

-

30V

20A (Tc), 60A (Tc)

6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V

2.2V @ 250µA

8.1nC @ 4.5V, 19.8nC @ 4.5V

930pF @ 15V, 2620pF @ 15V

20.2W, 32.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

MSCSM120HM31CTBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

SIL3724A-TP

Micro Commercial Co

MOSFET N/P-CH 30V 4.5A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

패키지: -

재고8,970

-

30V

4.5A, 3.5A

35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V

2.5V @ 250µA

6.08nC @ 15V

315pF @ 10V, 365pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

FDS6900AS-G

onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

Logic Level Gate

30V

6.9A, 8.2A

27mOhm @ 6.9A, 10V

3V @ 250µA, 3V @ 1mA

15nC @ 10V

600pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI3139KDWA-TP

Micro Commercial Co

MOSFET 2P-CH 20V 0.6A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Power - Max: 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고8,265

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20V

600mA

850mOhm @ 500mA, 4.5V

1.1V @ 250µA

0.86nC @ 4.5V

40pF @ 16V

150mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSS138AKDW-TP

Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고32,208

-

50V

220mA

3Ohm @ 500mA, 10V

1.45V @ 250µA

-

22800pF @ 25V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDMW2512NZ

Fairchild Semiconductor

MOSFET 2N-CH 20V 7.2A 6MLP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-MLP (2x5)

패키지: -

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20V

7.2A (Ta)

26mOhm @ 7.2A, 4.5V

1.5V @ 250µA

13nC @ 10V

740pF @ 15V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-MLP (2x5)

MMFT8472DW

Diotec Semiconductor

MOSFET SOT-363 N+P 50V 0.115A 10

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: SOT-363

패키지: -

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-

115mA

-

Surface Mount

-

SOT-363

DMN3032LFDBWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (SWP) Type B

패키지: -

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30V

5.5A (Ta)

30mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (SWP) Type B

NTD4906NAT4H

onsemi

MOSFET N-CH 30V 54A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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KFC4B21080L

Nuvoton Technology Corporation

MOSFET 12V 2.9A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-XFLGA, CSP
Supplier Device Package: 4-CSP (1.11x1.11)

패키지: -

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12V

2.9A (Ta)

37mOhm @ 1.5A, 4.5V

1.4V @ 1mA

7.1nC @ 4V

850pF @ 10V

350mW (Ta)

150°C

Surface Mount

4-XFLGA, CSP

4-CSP (1.11x1.11)

SQ4920EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Power - Max: 4.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고6,447

-

30V

8A (Tc)

14.5mOhm @ 6A, 10V

2.5V @ 250µA

30nC @ 10V

1465pF @ 15V

4.4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FAM65CR51DZ1

onsemi

APM16-CDA SF3 650V 51MOHM AL2O3

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Power - Max: 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Supplier Device Package: APMCD-B16

패키지: -

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650V

33A (Tc)

51mOhm @ 20A, 10V

5V @ 3.3mA

123nC @ 10V

4864pF @ 400V

160W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

12-SSIP Exposed Pad, Formed Leads

APMCD-B16

MSCSM70XM75CTYZBNMG

Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc), 52A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, 99nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 700V, 2010pF @ 700V
Power - Max: 90W (Tc), 141W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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700V

31A (Tc), 52A (Tc)

75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V

2.4V @ 1mA, 2.7V @ 2mA

56nC @ 20V, 99nC @ 20V

1175pF @ 700V, 2010pF @ 700V

90W (Tc), 141W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

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