페이지 65 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  65/203
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제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AON4807_101
Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
패키지: 8-VDFN Exposed Pad
재고5,744
Standard
30V
4A
68 mOhm @ 4A, 10V
2.3V @ 250µA
10nC @ 10V
290pF @ 15V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (3x2)
AO4801L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,592
Standard
30V
5A (Ta)
48 mOhm @ 5A, 10V
1.3V @ 250µA
9nC @ 4.5V
780pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI4913DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 7.1A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고145,824
Logic Level Gate
20V
7.1A
15 mOhm @ 9.4A, 4.5V
1V @ 500µA
65nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3951DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: SOT-23-6 Thin, TSOT-23-6
재고156,300
Logic Level Gate
20V
2.7A
115 mOhm @ 2.5A, 4.5V
1.5V @ 250µA
5.1nC @ 5V
250pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
PHN210,118
NXP

MOSFET 2N-CH 30V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,568
Logic Level Gate
30V
-
100 mOhm @ 2.2A, 10V
2.8V @ 1mA
6nC @ 10V
250pF @ 20V
2W
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
2N7002VA-7-F
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고4,848
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NTJD4001NT1
ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,376
Standard
30V
250mA
1.5 Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
AUIRF7379QTR
Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,696
Logic Level Gate
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
3V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTMC120TAM12CTPAG
Microsemi Corporation

MOSFET 6N-CH 1200V 220A SP6P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 220A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
  • Power - Max: 925W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
패키지: SP6
재고2,944
Standard
1200V (1.2kV)
220A
12 mOhm @ 150A, 20V
2.4V @ 30mA (Typ)
483nC @ 20V
8400pF @ 1000V
925W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
ALD114835PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V
  • Vgs(th) (Max) @ Id: 3.45V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고4,960
Depletion Mode
10.6V
12mA, 3mA
540 Ohm @ 0V
3.45V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot NTMFD4C88NT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고16,452
Standard
30V
11.7A, 14.2A
5.4 mOhm @ 10A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NVMFD5873NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,376
Logic Level Gate
60V
10A
13 mOhm @ 15A, 10V
2.5V @ 250µA
30.5nC @ 10V
1560pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot FDMC9430L_F085
Fairchild/ON Semiconductor

DUAL PT8 N 40/20V SYNCFET IN MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-MLP (3x3)
패키지: 8-PowerWDFN
재고17,100
Standard
40V
12A
8 mOhm @ 12A, 10V
3V @ 250µA
22nC @ 10V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-MLP (3x3)
DMC6070LND-13
Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
패키지: 8-PowerVDFN
재고6,784
Standard
60V
3.1A, 2.4A
85 mOhm @ 1.5A, 10V
3V @ 250µA
11.5nC @ 10V
731pF @ 20V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
AO4854
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,288
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PMDPB70XP,115
Nexperia USA Inc.

MOSFET 2P-CH 30V 2.9A 6DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
패키지: 6-UDFN Exposed Pad
재고6,960
Logic Level Gate
30V
2.9A
87 mOhm @ 2.9A, 4.5V
1V @ 250µA
7.8nC @ 5V
680pF @ 15V
490mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
SSM6N37FE,LM(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A 2-2N1D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고3,264
Logic Level Gate
20V
250mA
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
hot EM6K31GT2R
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고22,560
Logic Level Gate, 2.5V Drive
60V
250mA
2.4 Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
120mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
FDMS3624S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
패키지: 8-PowerTDFN
재고262,578
Logic Level Gate
25V
17.5A, 30A
5 mOhm @ 17.5A, 10V
2V @ 250µA
26nC @ 10V
1570pF @ 13V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
GSFCP0212
Good-Ark Semiconductor

MOSFET 20V 12A 6CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-CSP (2.15x1.66)
패키지: -
재고15,000
-
20V
12A (Ta)
6.8mOhm @ 3A, 4.5V
1.2V @ 250µA
34.7nC @ 6V
2609pF @ 10V
2W (Ta)
150°C
Surface Mount
6-SMD, No Lead
6-CSP (2.15x1.66)
SIL2301-TP
Micro Commercial Co

MOSFET 2P-CH 20V 2.3A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
패키지: -
재고72,087
-
20V
2.3A
90mOhm @ 2.5A, 4.5V
1V @ 250µA
10nC @ 4.5V
405pF @ 10V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
SQJ992EP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
패키지: -
재고23,757
-
60V
15A (Tc)
56.2mOhm @ 3.7A, 10V
2.5V @ 250µA
12nC @ 10V
446pF @ 30V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ956EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
  • Power - Max: 34W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
패키지: -
재고27,003
-
60V
23A (Tc)
26.7mOhm @ 5.2A, 10V
2.5V @ 250µA
30nC @ 10V
1395pF @ 30V
34W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
TSM150NB04LDCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 8A/37A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V
  • Power - Max: 2W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
패키지: -
재고22,350
-
40V
8A (Ta), 37A (Tc)
15mOhm @ 8A, 10V
2.5V @ 250µA
18nC @ 10V
966pF @ 20V
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
MSCSM170HM23CT3AG
Microchip Technology

SIC 4N-CH 1700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1700V (1.7kV)
124A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
602W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM025CD3AG
Microchip Technology

SIC 700V 538A D3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: D3
패키지: -
재고12
-
700V
538A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
D3
DMT35M8LDG-13
Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
  • Power - Max: 980mW (Ta), 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type G)
패키지: -
Request a Quote
-
30V
17A (Ta), 15.3A (Ta)
4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
1.9V @ 250µA
22.7nC @ 10V, 16.3nC @ 10V
1510pF @ 15V, 1032pF @ 15V
980mW (Ta), 2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type G)
SIL3724-TP
Micro Commercial Co

MOSFET N/P-CH 30V 5.8A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.1A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 700pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
패키지: -
Request a Quote
-
30V
5.8A, 4.1A
30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V
2.5V @ 250µA, 2.2V @ 250µA
-
820pF @ 15V, 700pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L