페이지 66 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL308PEL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 30V 2A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고3,424	Logic Level Gate	30V	2A	80 mOhm @ 2A, 10V	1V @ 11µA	5nC @ 10V	500pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
NTMD6N04R2G	ON Semiconductor	MOSFET 2N-CH 40V 4.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고377,568	Logic Level Gate	40V	4.6A	34 mOhm @ 5.8A, 10V	3V @ 250µA	30nC @ 10V	900pF @ 32V	1.29W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7940DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 12V 7.6A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고20,436	Logic Level Gate	12V	7.6A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI1029X-T1-E3	Vishay Siliconix	MOSFET N/P-CH 60V SOT563F FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고2,064	Logic Level Gate	60V	305mA, 190mA	1.4 Ohm @ 500mA, 10V	2.5V @ 250µA	0.75nC @ 4.5V	30pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDJ1027P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 2.8A SC-75 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC75-6 FLMP Supplier Device Package: SC75-6 FLMP	패키지: SC75-6 FLMP	재고204,432	Logic Level Gate	20V	2.8A	160 mOhm @ 2.8A, 4.5V	1.5V @ 250µA	4nC @ 4.5V	290pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	SC75-6 FLMP	SC75-6 FLMP
SP8M5TB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/7A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,080	Logic Level Gate	30V	6A, 7A	30 mOhm @ 6A, 10V	2.5V @ 1mA	7.2nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
APTM60A11FT1G	Microsemi Corporation	MOSFET 2N-CH 600V 40A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고6,448	Standard	600V	40A	132 mOhm @ 33A, 10V	5V @ 2.5mA	330nC @ 10V	10552pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IXTL2X180N10T	IXYS	MOSFET 2N-CH 100V 100A I5-PAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	패키지: ISOPLUSi5-Pak?	재고6,160	Standard	100V	100A	7.4 mOhm @ 50A, 10V	4.5V @ 250µA	151nC @ 10V	6900pF @ 25V	150W	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
ALD1101BSAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,376	Standard	10.6V	40mA	-	-	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD114804PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고6,160	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
NTJD4001NT1G	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,137,352	Standard	30V	250mA	1.5 Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
DMN4026SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고16,236	Logic Level Gate	40V	7A	24 mOhm @ 6A, 10V	3V @ 250µA	19.1nC @ 10V	1060pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD1116PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고17,532	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
QH8KA3TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 9A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고8,760	-	30V	9A (Ta)	16mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	1.5W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
IAUC60N04S6N031HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-56	패키지: -	재고28,929	-	40V	60A (Tj)	3.1mOhm @ 30A, 10V	3V @ 25µA	30nC @ 10V	1922pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
AOCA32112E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4.5A 4ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-AlphaDFN (0.97x0.97)	패키지: -	Request a Quote	-	20V	4.5A (Ta)	48mOhm @ 3A, 4.5V	1.3V @ 250µA	11.5nC @ 4.5V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-AlphaDFN (0.97x0.97)
AONH36328	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 13.8A/18A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power - Max: 2.5W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)	패키지: -	Request a Quote	-	30V	13.8A (Ta), 18A (Tc)	8.5mOhm @ 20A, 10V	2.1V @ 250µA	20nC @ 10V	700pF @ 15V	2.5W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (3x3)
AON2803G	Alpha & Omega Semiconductor Inc.	MOSFET P-CH DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CWDM305PD-TR13-PBFREE	Central Semiconductor Corp	MOSFET 2P-CH 30V 5.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	30V	5.3A	72mOhm @ 2.7A, 10V	3V @ 250µA	7nC @ 5V	590pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PJX138K_R1_00001	Panjit International Inc.	MOSFET 2N-CH 50V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 223mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고75,456	-	50V	350mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1nC @ 4.5V	50pF @ 25V	223mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
PJT7802_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고8,100	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	1V @ 250µA	0.9nC @ 4.5V	39pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN52D0UDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	50V	350mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	42.3pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSM600D12P3G001	Rohm Semiconductor	SIC 2N-CH 1200V 600A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 5.6V @ 182mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V Power - Max: 2450W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고12	-	1200V (1.2kV)	600A (Tc)	-	5.6V @ 182mA	-	31000pF @ 10V	2450W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
PJL9850_R2_00001	Panjit International Inc.	MOSFET 2N-CH 40V 5.4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고11,454	-	40V	5.4A (Ta)	32mOhm @ 5A, 10V	2.5V @ 250µA	4.4nC @ 4.5V	425pF @ 25V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM8568CV-RGG	Taiwan Semiconductor Corporation	-30V, -4.5A, COMPLEMENTARY P-CHA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고30,000	-	-	-	-	-	-	-	-	-	-	-	-
SH8MA2GZETB	Rohm Semiconductor	MOSFET N/P-CH 30V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고9,813	-	30V	4.5A (Ta)	80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 4.5V, 6.7nC @ 4.5V	125pF @ 15V, 305pF @ 15V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMG1023UVQ-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.03A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고8,700	-	20V	1.03A (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.622nC @ 4.5V	59pF @ 16V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
2N7002DWAQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	60V	180mA (Ta)	6Ohm @ 115mA, 10V	2.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

BSL308PEL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 30V 2A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고3,424

Logic Level Gate

30V

2A

80 mOhm @ 2A, 10V

1V @ 11µA

5nC @ 10V

500pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

NTMD6N04R2G

ON Semiconductor

MOSFET 2N-CH 40V 4.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.29W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고377,568

Logic Level Gate

40V

4.6A

34 mOhm @ 5.8A, 10V

3V @ 250µA

30nC @ 10V

900pF @ 32V

1.29W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7940DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고20,436

Logic Level Gate

12V

7.6A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI1029X-T1-E3

Vishay Siliconix

MOSFET N/P-CH 60V SOT563F

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고2,064

Logic Level Gate

60V

305mA, 190mA

1.4 Ohm @ 500mA, 10V

2.5V @ 250µA

0.75nC @ 4.5V

30pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDJ1027P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.8A SC-75

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC75-6 FLMP
Supplier Device Package: SC75-6 FLMP

패키지: SC75-6 FLMP

재고204,432

Logic Level Gate

20V

2.8A

160 mOhm @ 2.8A, 4.5V

1.5V @ 250µA

4nC @ 4.5V

290pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

SC75-6 FLMP

SP8M5TB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,080

Logic Level Gate

30V

6A, 7A

30 mOhm @ 6A, 10V

2.5V @ 1mA

7.2nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

APTM60A11FT1G

Microsemi Corporation

MOSFET 2N-CH 600V 40A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고6,448

Standard

600V

40A

132 mOhm @ 33A, 10V

5V @ 2.5mA

330nC @ 10V

10552pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

IXTL2X180N10T

IXYS

MOSFET 2N-CH 100V 100A I5-PAK

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Power - Max: 150W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

패키지: ISOPLUSi5-Pak?

재고6,160

Standard

100V

100A

7.4 mOhm @ 50A, 10V

4.5V @ 250µA

151nC @ 10V

6900pF @ 25V

150W

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUSi5-Pak?

ALD1101BSAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,376

Standard

10.6V

40mA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ALD114804PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
Vgs(th) (Max) @ Id: 360mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고6,160

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 3.6V

360mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,137,352

Standard

30V

250mA

1.5 Ohm @ 10mA, 4V

1.5V @ 100µA

1.3nC @ 5V

33pF @ 5V

272mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

DMN4026SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 7A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고16,236

Logic Level Gate

40V

7A

24 mOhm @ 6A, 10V

3V @ 250µA

19.1nC @ 10V

1060pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD1116PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고17,532

Standard

10.6V

-

500 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

QH8KA3TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 9A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고8,760

-

30V

9A (Ta)

16mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

1.5W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

IAUC60N04S6N031HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-56

패키지: -

재고28,929

-

40V

60A (Tj)

3.1mOhm @ 30A, 10V

3V @ 25µA

30nC @ 10V

1922pF @ 25V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-56

AOCA32112E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.5A 4ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-AlphaDFN (0.97x0.97)

패키지: -

Request a Quote

-

20V

4.5A (Ta)

48mOhm @ 3A, 4.5V

1.3V @ 250µA

11.5nC @ 4.5V

-

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, No Lead

4-AlphaDFN (0.97x0.97)

AONH36328

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13.8A/18A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Power - Max: 2.5W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3x3)

패키지: -

Request a Quote

-

30V

13.8A (Ta), 18A (Tc)

8.5mOhm @ 20A, 10V

2.1V @ 250µA

20nC @ 10V

700pF @ 15V

2.5W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (3x3)

AON2803G

Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CWDM305PD-TR13-PBFREE

Central Semiconductor Corp

MOSFET 2P-CH 30V 5.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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-

30V

5.3A

72mOhm @ 2.7A, 10V

3V @ 250µA

7nC @ 5V

590pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PJX138K_R1_00001

Panjit International Inc.

MOSFET 2N-CH 50V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 223mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고75,456

-

50V

350mA (Ta)

1.6Ohm @ 500mA, 10V

1.5V @ 250µA

1nC @ 4.5V

50pF @ 25V

223mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

PJT7802_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고8,100

-

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

1V @ 250µA

0.9nC @ 4.5V

39pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN52D0UDWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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50V

350mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

42.3pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSM600D12P3G001

Rohm Semiconductor

SIC 2N-CH 1200V 600A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
Power - Max: 2450W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고12

-

1200V (1.2kV)

600A (Tc)

-

5.6V @ 182mA

-

31000pF @ 10V

2450W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

PJL9850_R2_00001

Panjit International Inc.

MOSFET 2N-CH 40V 5.4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고11,454

-

40V

5.4A (Ta)

32mOhm @ 5A, 10V

2.5V @ 250µA

4.4nC @ 4.5V

425pF @ 25V

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TSM8568CV-RGG

Taiwan Semiconductor Corporation

-30V, -4.5A, COMPLEMENTARY P-CHA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고30,000

-

SH8MA2GZETB

Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고9,813

-

30V

4.5A (Ta)

80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V

2.5V @ 1mA

3nC @ 4.5V, 6.7nC @ 4.5V

125pF @ 15V, 305pF @ 15V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMG1023UVQ-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Power - Max: 530mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고8,700

-

20V

1.03A (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.622nC @ 4.5V

59pF @ 16V

530mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

2N7002DWAQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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60V

180mA (Ta)

6Ohm @ 115mA, 10V

2.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363