페이지 63 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF8313PBF	Infineon Technologies	MOSFET 2N-CH 30V 9.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고10,800	Logic Level Gate	30V	9.7A	15.5 mOhm @ 9.7A, 10V	2.35V @ 25µA	90nC @ 4.5V	760pF @ 15V	2W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC8298	Fairchild/ON Semiconductor	MOSFET 2N-CH 8MLP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고90,852	-	-	-	-	-	-	-	-	-	-	-	-
AO4914_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	패키지: 8-SOIC	재고5,072	Standard	30V	8A	20.5 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	865pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
ECH8652-TL-H	ON Semiconductor	MOSFET 2P-CH 12V 6A ECH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고16,800	Logic Level Gate	12V	6A	28 mOhm @ 3A, 4.5V	-	11nC @ 4.5V	1000pF @ 6V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
AO4826	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 6.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고295,380	Logic Level Gate	60V	-	25 mOhm @ 6.3A, 10V	3V @ 250µA	58nC @ 10V	2300pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7307PBF	Infineon Technologies	MOSFET N/P-CH 20V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고91,320	Logic Level Gate	20V	5.2A, 4.3A	50 mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD210808PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고6,816	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SI7218DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 24A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고8,700	Standard	30V	24A	25 mOhm @ 8A, 10V	3V @ 250µA	17nC @ 10V	700pF @ 15V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
EFC6611R-A-TF	ON Semiconductor	MOSFET 2N-CH 12V 27A EFCP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)	패키지: 6-SMD, No Lead	재고6,144	-	-	-	-	-	-	-	-	-	Surface Mount	6-SMD, No Lead	6-CSP (1.77x3.54)
DMPH6050SPD-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고2,128	Standard	-	26A (Tc)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
NVTJD4001NT2G	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SC-88 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고84,000	Standard	30V	250mA	1.5 Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
ZXMN6A09DN8TA	Diodes Incorporated	MOSFET 2N-CH 60V 4.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고180,780	Logic Level Gate	60V	4.3A	40 mOhm @ 8.2A, 10V	3V @ 250µA	24.2nC @ 5V	1407pF @ 40V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4943BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 6.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고397,068	Logic Level Gate	20V	6.3A	19 mOhm @ 8.4A, 10V	3V @ 250µA	25nC @ 5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4611	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 60V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고276,780	Logic Level Gate	60V	-	25 mOhm @ 6.3A, 10V	3V @ 250µA	58nC @ 10V	2300pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SSM6L16FETE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	패키지: SOT-563, SOT-666	재고3,408	Standard	20V	100mA	3 Ohm @ 10mA, 4V	1.1V @ 0.1mA	-	9.3pF @ 3V	150mW	150°C (TA)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SQJ200EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 20A/60A PPAK SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	패키지: PowerPAK? SO-8 Dual	재고28,530	Standard	20V	20A, 60A	8.8 mOhm @ 16A, 10V	2V @ 250µA	18nC @ 10V	975pF @ 10V	27W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
FDMS3602S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/26A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고68,280	Logic Level Gate	25V	15A, 26A	5.6 mOhm @ 15A, 10V	3V @ 250µA	27nC @ 10V	1680pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
NTMD3P03R2G	ON Semiconductor	MOSFET 2P-CH 30V 2.34A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.34A Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고638,328	Logic Level Gate	30V	2.34A	85 mOhm @ 3.05A, 10V	2.5V @ 250µA	25nC @ 10V	750pF @ 24V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLJD3119CTBG	ON Semiconductor	MOSFET N/P-CH 20V 6WDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고7,792	Logic Level Gate	20V	2.6A, 2.3A	65 mOhm @ 3.8A, 4.5V	1V @ 250µA	3.7nC @ 4.5V	271pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
SI1539CDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V SOT363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Rds On (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고621,324	Logic Level Gate	30V	700mA, 500mA	388 mOhm @ 600mA, 10V	2.5V @ 250µA	1.5nC @ 10V	28pF @ 15V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC3061SVTQ-7	Diodes Incorporated	MOSFET N/P-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고5,373	-	30V	3.4A (Ta), 2.7A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.2V @ 250µA	6.6nC @ 10V, 6.8nC @ 10V	278pF @ 15V, 287pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
EFC4601-M-TR-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQJ912DEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고7,065	-	40V	30A (Tc)	7.3mOhm @ 7A, 10V	2.5V @ 250µA	36nC @ 10V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
GSFP03602	Good-Ark Semiconductor	MOSFET 2N-CH 30V 60A 8PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V Power - Max: 52W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PPAK (5x5.8)	패키지: -	재고14,919	-	30V	60A (Tc)	7mOhm @ 30A, 10V	2.5V @ 250µA	23.5nC @ 10V	1335pF @ 15V	52W (Tc)	-50°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PPAK (5x5.8)
NXV08H400XT2	onsemi	APM17-MDA, MV7 80V, ALN, 2 PHASE FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V Power - Max: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (1.778", 45.15mm) Supplier Device Package: APM17-MDA	패키지: -	Request a Quote	-	80V	-	765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V	4.6V @ 1mA	502nC @ 12V	30150pF @ 40V	-	175°C (TJ)	Through Hole	17-PowerDIP Module (1.778", 45.15mm)	APM17-MDA
WAS350M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 417A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	417A (Tc)	5.2mOhm @ 350A, 15V	3.6V @ 85mA	844nC @ 15V	25700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
GT060N04D52	Goford Semiconductor	MOSFET 2N-CH 40V 62A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (4.9x5.75)	패키지: -	Request a Quote	-	40V	62A (Tc)	6.5mOhm @ 30A, 10V	2.3V @ 250µA	44nC @ 10V	1276pF @ 20V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)
MSCC60VRM45TAPG	Microchip Technology	MOSFET 600V 40A SP6-P FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	패키지: -	Request a Quote	-	600V	40A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP6-P

IRF8313PBF

Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고10,800

Logic Level Gate

30V

9.7A

15.5 mOhm @ 9.7A, 10V

2.35V @ 25µA

90nC @ 4.5V

760pF @ 15V

2W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC8298

Fairchild/ON Semiconductor

MOSFET 2N-CH 8MLP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고90,852

-

AO4914_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

패키지: 8-SOIC

재고5,072

Standard

30V

8A

20.5 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

865pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

ECH8652-TL-H

ON Semiconductor

MOSFET 2P-CH 12V 6A ECH8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고16,800

Logic Level Gate

12V

6A

28 mOhm @ 3A, 4.5V

-

11nC @ 4.5V

1000pF @ 6V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

AO4826

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 6.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고295,380

Logic Level Gate

60V

-

25 mOhm @ 6.3A, 10V

3V @ 250µA

58nC @ 10V

2300pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRF7307PBF

Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고91,320

Logic Level Gate

20V

5.2A, 4.3A

50 mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD210808PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고6,816

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SI7218DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 24A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고8,700

Standard

30V

24A

25 mOhm @ 8A, 10V

3V @ 250µA

17nC @ 10V

700pF @ 15V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

EFC6611R-A-TF

ON Semiconductor

MOSFET 2N-CH 12V 27A EFCP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)

패키지: 6-SMD, No Lead

재고6,144

-

Surface Mount

6-SMD, No Lead

6-CSP (1.77x3.54)

DMPH6050SPD-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI506

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고2,128

Standard

-

26A (Tc)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

NVTJD4001NT2G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SC-88

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고84,000

Standard

30V

250mA

1.5 Ohm @ 10mA, 4V

1.5V @ 100µA

1.3nC @ 5V

33pF @ 5V

272mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

ZXMN6A09DN8TA

Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고180,780

Logic Level Gate

60V

4.3A

40 mOhm @ 8.2A, 10V

3V @ 250µA

24.2nC @ 5V

1407pF @ 40V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4943BDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 6.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고397,068

Logic Level Gate

20V

6.3A

19 mOhm @ 8.4A, 10V

3V @ 250µA

25nC @ 5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4611

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고276,780

Logic Level Gate

60V

-

25 mOhm @ 6.3A, 10V

3V @ 250µA

58nC @ 10V

2300pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SSM6L16FETE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

패키지: SOT-563, SOT-666

재고3,408

Standard

20V

100mA

3 Ohm @ 10mA, 4V

1.1V @ 0.1mA

-

9.3pF @ 3V

150mW

150°C (TA)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

SQJ200EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 20A/60A PPAK SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

패키지: PowerPAK? SO-8 Dual

재고28,530

Standard

20V

20A, 60A

8.8 mOhm @ 16A, 10V

2V @ 250µA

18nC @ 10V

975pF @ 10V

27W, 48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

FDMS3602S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/26A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고68,280

Logic Level Gate

25V

15A, 26A

5.6 mOhm @ 15A, 10V

3V @ 250µA

27nC @ 10V

1680pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

NTMD3P03R2G

ON Semiconductor

MOSFET 2P-CH 30V 2.34A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.34A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
Power - Max: 730mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고638,328

Logic Level Gate

30V

2.34A

85 mOhm @ 3.05A, 10V

2.5V @ 250µA

25nC @ 10V

750pF @ 24V

730mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLJD3119CTBG

ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고7,792

Logic Level Gate

20V

2.6A, 2.3A

65 mOhm @ 3.8A, 4.5V

1V @ 250µA

3.7nC @ 4.5V

271pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

SI1539CDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V SOT363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고621,324

Logic Level Gate

30V

700mA, 500mA

388 mOhm @ 600mA, 10V

2.5V @ 250µA

1.5nC @ 10V

28pF @ 15V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC3061SVTQ-7

Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Power - Max: 880mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고5,373

-

30V

3.4A (Ta), 2.7A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.2V @ 250µA

6.6nC @ 10V, 6.8nC @ 10V

278pF @ 15V, 287pF @ 15V

880mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

EFC4601-M-TR-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SQJ912DEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고7,065

-

40V

30A (Tc)

7.3mOhm @ 7A, 10V

2.5V @ 250µA

36nC @ 10V

-

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

GSFP03602

Good-Ark Semiconductor

MOSFET 2N-CH 30V 60A 8PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
Power - Max: 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PPAK (5x5.8)

패키지: -

재고14,919

-

30V

60A (Tc)

7mOhm @ 30A, 10V

2.5V @ 250µA

23.5nC @ 10V

1335pF @ 15V

52W (Tc)

-50°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PPAK (5x5.8)

NXV08H400XT2

onsemi

APM17-MDA, MV7 80V, ALN, 2 PHASE

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Power - Max: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 17-PowerDIP Module (1.778", 45.15mm)
Supplier Device Package: APM17-MDA

패키지: -

Request a Quote

-

80V

-

765µOhm @ 160A, 12V, 710µOhm @ 160A, 12V

4.6V @ 1mA

502nC @ 12V

30150pF @ 40V

-

175°C (TJ)

Through Hole

17-PowerDIP Module (1.778", 45.15mm)

APM17-MDA

WAS350M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 417A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV)

417A (Tc)

5.2mOhm @ 350A, 15V

3.6V @ 85mA

844nC @ 15V

25700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

GT060N04D52

Goford Semiconductor

MOSFET 2N-CH 40V 62A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (4.9x5.75)

패키지: -

Request a Quote

-

40V

62A (Tc)

6.5mOhm @ 30A, 10V

2.3V @ 250µA

44nC @ 10V

1276pF @ 20V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (4.9x5.75)

MSCC60VRM45TAPG

Microchip Technology

MOSFET 600V 40A SP6-P

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P

패키지: -

Request a Quote

-

600V

40A (Tc)

-

Chassis Mount

Module

SP6-P