페이지 74 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GWM100-01X1-SMD	IXYS	MOSFET 6N-CH 100V 90A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고5,568	Standard	100V	90A	8.5 mOhm @ 80A, 10V	4.5V @ 250µA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
APTM10TDUM19PG	Microsemi Corporation	MOSFET 6N-CH 100V 70A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고7,216	Standard	100V	70A	21 mOhm @ 35A, 10V	4V @ 1mA	200nC @ 10V	5100pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
VMM1500-0075P	IXYS	MOSFET 2N-CH 75V 1500A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 1500A Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2480nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	패키지: Y3-Li	재고7,904	Standard	75V	1500A	0.8 mOhm @ 1200A, 10V	4V @ 10mA	2480nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
NDS8936	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,170,456	Logic Level Gate	30V	5.3A	35 mOhm @ 5.3A, 10V	2.8V @ 250µA	30nC @ 10V	720pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM50AM17FG	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고7,232	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
VWM270-0075X2	IXYS	MOSFET 6N-CH 75V 270A V2-PAK FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 270A Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK Supplier Device Package: V2-PAK	패키지: V2-PAK	재고4,640	Standard	75V	270A	2.1 mOhm @ 100A, 10V	4V @ 500µA	360nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Chassis Mount	V2-PAK	V2-PAK
SP8M70TB1	Rohm Semiconductor	MOSFET N/P-CH 250V 3A/2.5A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고393,492	Standard	250V	3A, 2.5A	1.63 Ohm @ 1.5A, 10V	4V @ 1mA	5.2nC @ 10V	180pF @ 25V	650mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD114804APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고5,920	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
STL36DN6F7	STMicroelectronics	DUAL N-CHANNEL 60 V 0.023 OHM TY FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 58W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고3,936	Standard	60V	33A (Tc)	27 mOhm @ 4.5A, 10V	4V @ 250µA	8nC @ 10V	420pF @ 30V	58W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
CSD75207W15	Texas Instruments	MOSFET 2P-CH 3.9A 9DSBGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 162 mOhm @ 1A, 1.8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Supplier Device Package: 9-DSBGA	패키지: 9-UFBGA, DSBGA	재고5,072	Logic Level Gate	-	3.9A	162 mOhm @ 1A, 1.8V	1.1V @ 250µA	3.7nC @ 4.5V	595pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	9-UFBGA, DSBGA	9-DSBGA
NTHD3102CT1G	ON Semiconductor	MOSFET N/P-CH 20V 4A/3.1A 1206A FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고1,189,320	Logic Level Gate	20V	4A, 3.1A	45 mOhm @ 4.4A, 4.5V	1.2V @ 250µA	7.9nC @ 4.5V	510pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
FDME1034CZT	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6-MICROFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고26,328	Logic Level Gate	20V	3.8A, 2.6A	66 mOhm @ 3.4A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	300pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-MicroFET (1.6x1.6)
UPA2371T1P-E1-A	Renesas	MOSFET 2N-CH 24V 6A 4EFLIP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-UFLGA Supplier Device Package: 4-EFLIP (1.62x1.62)	패키지: -	Request a Quote	-	24V	6A	-	-	-	-	-	-	Surface Mount	4-UFLGA	4-EFLIP (1.62x1.62)
SI6562CDQ-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 20V 5.7A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	재고9,714	-	20V	5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)	22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V	1.5V @ 250µA	23nC @ 10V, 51nC @ 10V	850pF @ 10V, 1200pF @ 10V	1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMDT290UCEH	Nexperia USA Inc.	MOSFET N/P-CH 20V 0.8A SOT666 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V Power - Max: 330mW (Ta), 1.09W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: -	Request a Quote	-	20V	800mA (Ta), 550mA (Ta)	380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V	950mV @ 250µA, 1.3V @ 250µA	0.68nC @ 4.5V, 1.14nC @ 4.5V	83pF @ 10V, 87pF @ 10V	330mW (Ta), 1.09W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
SSM6P35AFE-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,136	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
AONE36182	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 17A/60A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	패키지: -	Request a Quote	-	25V	17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc)	4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V	1.8V @ 250µA	21nC @ 10V, 80nC @ 10V	880pF @ 12.5V, 3215pF @ 12.5V	2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3.3x3.3)
2N7002KDWBQ-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V Power - Max: 240mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고18,000	Logic Level Gate	60V	220mA (Ta)	2.5Ohm @ 300mA, 10V	2.4V @ 250µA	1.75nC @ 10V	25pF @ 25V	240mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SSM6P39TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 1.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고26,805	Logic Level Gate, 1.8V Drive	20V	1.5A (Ta)	213mOhm @ 1A, 4V	1V @ 1mA	6.4nC @ 4V	250pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SIZ254DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 70V 11.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	재고2,700	-	70V	11.7A (Ta), 32.5A (Tc)	16.1mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	795pF @ 35V, 765pF @ 35V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
RBK04U04GNS-0000-HBH	Renesas Electronics Corporation	POWER TRS2 LIB 8P HVSON ANL4 OTH FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSON (5x6)	패키지: -	Request a Quote	-	-	35A (Ta)	1.5mOhm @ 18A, 10V	4V @ 1mA	-	-	-	150°C	Surface Mount	8-PowerTDFN	8-HSON (5x6)
DMC3071LVT-7	Diodes Incorporated	MOSFET N/P-CH 30V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고59,607	-	30V	4.6A (Ta), 3.3A (Ta)	50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V	2.5V @ 250µA	4.5nC @ 10V, 6.5nC @ 10V	190pF @ 15V, 254pF @ 15V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN1002UCA6-7	Diodes Incorporated	MOSFET 2N-CH X4-DSN3118-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X4-DSN3118-6	패키지: -	Request a Quote	-	-	-	-	-	68.6nC @ 4V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X4-DSN3118-6
SIS9446DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 11.3A/34A PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8	패키지: -	Request a Quote	-	40V	11.3A (Ta), 34A (Tc)	12mOhm @ 10A, 10V	2.3V @ 250µA	16nC @ 10V	720pF @ 20V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
NTMFD1D1N02X	onsemi	MOSFET 2N-CH 25V 14A/75A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	재고9,000	-	25V	14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)	3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V	2.1V @ 240µA, 2.1V @ 850µA	15nC @ 10V, 59nC @ 10V	1080pF @ 12V, 4265pF @ 12V	960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
MSCSM70HM038AG	Microchip Technology	SIC 4N-CH 700V 464A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Power - Max: 1.277kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1.277kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCMC120AM07CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 264A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 264A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 4V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V Power - Max: 1350W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	패키지: -	Request a Quote	-	1200V (1.2kV)	264A (Tc)	8.7mOhm @ 240A, 20V	4V @ 60mA	690nC @ 20V	11400pF @ 1000V	1350W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
VEC2616-TL-H-Z-W	onsemi	MOSFET N/P-CH 60V 3A/2.5A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: -	Request a Quote	-	60V	3A (Ta), 2.5A (Ta)	80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V, 11nC @ 10V	505pF @ 20V	1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8

GWM100-01X1-SMD

IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고5,568

Standard

100V

90A

8.5 mOhm @ 80A, 10V

4.5V @ 250µA

90nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

APTM10TDUM19PG

Microsemi Corporation

MOSFET 6N-CH 100V 70A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고7,216

Standard

100V

70A

21 mOhm @ 35A, 10V

4V @ 1mA

200nC @ 10V

5100pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

VMM1500-0075P

IXYS

MOSFET 2N-CH 75V 1500A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 1500A
Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2480nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

패키지: Y3-Li

재고7,904

Standard

75V

1500A

0.8 mOhm @ 1200A, 10V

4V @ 10mA

2480nC @ 10V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Y3-Li

NDS8936

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,170,456

Logic Level Gate

30V

5.3A

35 mOhm @ 5.3A, 10V

2.8V @ 250µA

30nC @ 10V

720pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM50AM17FG

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고7,232

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

VWM270-0075X2

IXYS

MOSFET 6N-CH 75V 270A V2-PAK

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 270A
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK
Supplier Device Package: V2-PAK

패키지: V2-PAK

재고4,640

Standard

75V

270A

2.1 mOhm @ 100A, 10V

4V @ 500µA

360nC @ 10V

-

-40°C ~ 175°C (TJ)

Chassis Mount

V2-PAK

SP8M70TB1

Rohm Semiconductor

MOSFET N/P-CH 250V 3A/2.5A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고393,492

Standard

250V

3A, 2.5A

1.63 Ohm @ 1.5A, 10V

4V @ 1mA

5.2nC @ 10V

180pF @ 25V

650mW

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD114804APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고5,920

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 3.6V

380mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

STL36DN6F7

STMicroelectronics

DUAL N-CHANNEL 60 V 0.023 OHM TY

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 58W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고3,936

Standard

60V

33A (Tc)

27 mOhm @ 4.5A, 10V

4V @ 250µA

8nC @ 10V

420pF @ 30V

58W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

CSD75207W15

Texas Instruments

MOSFET 2P-CH 3.9A 9DSBGA

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 162 mOhm @ 1A, 1.8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, DSBGA
Supplier Device Package: 9-DSBGA

패키지: 9-UFBGA, DSBGA

재고5,072

Logic Level Gate

-

3.9A

162 mOhm @ 1A, 1.8V

1.1V @ 250µA

3.7nC @ 4.5V

595pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

9-UFBGA, DSBGA

9-DSBGA

NTHD3102CT1G

ON Semiconductor

MOSFET N/P-CH 20V 4A/3.1A 1206A

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고1,189,320

Logic Level Gate

20V

4A, 3.1A

45 mOhm @ 4.4A, 4.5V

1.2V @ 250µA

7.9nC @ 4.5V

510pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

FDME1034CZT

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6-MICROFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고26,328

Logic Level Gate

20V

3.8A, 2.6A

66 mOhm @ 3.4A, 4.5V

1V @ 250µA

4.2nC @ 4.5V

300pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-MicroFET (1.6x1.6)

UPA2371T1P-E1-A

Renesas

MOSFET 2N-CH 24V 6A 4EFLIP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-UFLGA
Supplier Device Package: 4-EFLIP (1.62x1.62)

패키지: -

Request a Quote

-

24V

6A

-

Surface Mount

4-UFLGA

4-EFLIP (1.62x1.62)

SI6562CDQ-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 20V 5.7A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

재고9,714

-

20V

5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)

22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V

1.5V @ 250µA

23nC @ 10V, 51nC @ 10V

850pF @ 10V, 1200pF @ 10V

1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PMDT290UCEH

Nexperia USA Inc.

MOSFET N/P-CH 20V 0.8A SOT666

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V
Power - Max: 330mW (Ta), 1.09W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: -

Request a Quote

-

20V

800mA (Ta), 550mA (Ta)

380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V

950mV @ 250µA, 1.3V @ 250µA

0.68nC @ 4.5V, 1.14nC @ 4.5V

83pF @ 10V, 87pF @ 10V

330mW (Ta), 1.09W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

SSM6P35AFE-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,136

Logic Level Gate, 1.2V Drive

20V

250mA (Ta)

1.4Ohm @ 150mA, 4.5V

1V @ 100µA

-

42pF @ 10V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

AONE36182

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 17A/60A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V
Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

패키지: -

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-

25V

17A (Ta), 60A (Tc), 34A (Ta), 60A (Tc)

4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V

1.8V @ 250µA

21nC @ 10V, 80nC @ 10V

880pF @ 12.5V, 3215pF @ 12.5V

2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3.3x3.3)

2N7002KDWBQ-TP

Micro Commercial Co

MOSFET 2N-CH 60V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
Power - Max: 240mW (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고18,000

Logic Level Gate

60V

220mA (Ta)

2.5Ohm @ 300mA, 10V

2.4V @ 250µA

1.75nC @ 10V

25pF @ 25V

240mW (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SSM6P39TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.5A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고26,805

Logic Level Gate, 1.8V Drive

20V

1.5A (Ta)

213mOhm @ 1A, 4V

1V @ 1mA

6.4nC @ 4V

250pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SIZ254DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 70V 11.7A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

재고2,700

-

70V

11.7A (Ta), 32.5A (Tc)

16.1mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

795pF @ 35V, 765pF @ 35V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

RBK04U04GNS-0000-HBH

Renesas Electronics Corporation

POWER TRS2 LIB 8P HVSON ANL4 OTH

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSON (5x6)

패키지: -

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-

35A (Ta)

1.5mOhm @ 18A, 10V

4V @ 1mA

-

150°C

Surface Mount

8-PowerTDFN

8-HSON (5x6)

DMC3071LVT-7

Diodes Incorporated

MOSFET N/P-CH 30V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고59,607

-

30V

4.6A (Ta), 3.3A (Ta)

50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V

2.5V @ 250µA

4.5nC @ 10V, 6.5nC @ 10V

190pF @ 15V, 254pF @ 15V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN1002UCA6-7

Diodes Incorporated

MOSFET 2N-CH X4-DSN3118-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X4-DSN3118-6

패키지: -

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-

68.6nC @ 4V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X4-DSN3118-6

SIS9446DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 11.3A/34A PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8

패키지: -

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-

40V

11.3A (Ta), 34A (Tc)

12mOhm @ 10A, 10V

2.3V @ 250µA

16nC @ 10V

720pF @ 20V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8

NTMFD1D1N02X

onsemi

MOSFET 2N-CH 25V 14A/75A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

재고9,000

-

25V

14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)

3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V

2.1V @ 240µA, 2.1V @ 850µA

15nC @ 10V, 59nC @ 10V

1080pF @ 12V, 4265pF @ 12V

960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

MSCSM70HM038AG

Microchip Technology

SIC 4N-CH 700V 464A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Power - Max: 1.277kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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-

700V

464A (Tc)

4.8mOhm @ 160A, 20V

2.4V @ 16mA

860nC @ 20V

18000pF @ 700V

1.277kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCMC120AM07CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 264A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 264A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V
Power - Max: 1350W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

패키지: -

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-

1200V (1.2kV)

264A (Tc)

8.7mOhm @ 240A, 20V

4V @ 60mA

690nC @ 20V

11400pF @ 1000V

1350W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

VEC2616-TL-H-Z-W

onsemi

MOSFET N/P-CH 60V 3A/2.5A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

패키지: -

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-

60V

3A (Ta), 2.5A (Ta)

80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V, 11nC @ 10V

505pF @ 20V

1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8