페이지 75 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N7335	Microsemi Corporation	MOSFET 4P-CH 100V 0.75A MO-036AB FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	패키지: 14-DIP (0.300", 7.62mm)	재고4,144	Standard	100V	750mA	1.4 Ohm @ 500mA, 10V	4V @ 250µA	-	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
AON2809	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 12V 2A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x2)	패키지: 6-WDFN Exposed Pad	재고2,096	Logic Level Gate	12V	2A	68 mOhm @ 2A, 4.5V	900mV @ 250µA	4.4nC @ 4.5V	415pF @ 6V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN-EP (2x2)
SI5906DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK FET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	패키지: PowerPAK? ChipFET? Dual	재고72,000	Logic Level Gate	30V	6A	31 mOhm @ 4.8A, 10V	2.2V @ 250µA	8.6nC @ 10V	300pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SIA912DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고299,640	Logic Level Gate	12V	4.5A	40 mOhm @ 4.2A, 4.5V	1V @ 250µA	11.5nC @ 8V	400pF @ 6V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
APTM120TA57FPG	Microsemi Corporation	MOSFET 6N-CH 1200V 17A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고5,408	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM20HM16FTG	Microsemi Corporation	MOSFET 4N-CH 200V 104A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고4,320	Standard	200V	104A	19 mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM100H46FT3G	Microsemi Corporation	MOSFET 4N-CH 1000V 19A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 19A Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고3,552	Standard	1000V (1kV)	19A	552 mOhm @ 16A, 10V	5V @ 2.5mA	260nC @ 10V	6800pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AO9926C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고144,060	Logic Level Gate	20V	7.6A	23 mOhm @ 7.6A, 10V	1.1V @ 250µA	12.5nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC1030UFDB-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-DFN2020-6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V Power - Max: 1.36W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고5,632	Standard	12V	5.1A (Ta), 3.9A (Ta)	34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V	1V @ 250µA	12.2nC @ 4.5V, 13nC @ 4.5V	1003pF @ 6V, 1028pF @ 6V	1.36W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MCH6662-TL-W	ON Semiconductor	MOSFET 2N-CH 20V 2A MCPH6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SC-88FL/ MCPH6	패키지: 6-SMD, Flat Leads	재고2,192	Logic Level Gate, 1.8V Drive	20V	2A	160 mOhm @ 1A, 4.5V	1.3V @ 1mA	1.8nC @ 4.5V	128pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SC-88FL/ MCPH6
CMLDM8002AG TR	Central Semiconductor Corp	MOSFET 2P-CH 50V 0.28A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고5,872	Logic Level Gate	50V	280mA	2.5 Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	70pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDG6316P	Fairchild/ON Semiconductor	MOSFET 2P-CH 12V 0.7A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 700mA Rds On (Max) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 6V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고1,496,640	Logic Level Gate	12V	700mA	270 mOhm @ 700mA, 4.5V	1.5V @ 250µA	2.4nC @ 4.5V	146pF @ 6V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
MCH6613-TL-E	ON Semiconductor	MOSFET N/P-CH 30V MCPH6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	패키지: 6-SMD, Flat Leads	재고175,944	Logic Level Gate	30V	350mA, 200mA	3.7 Ohm @ 80mA, 4V	-	1.58nC @ 10V	7pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
ZXMD63P02XTA	Diodes Incorporated	MOSFET 2P-CH 20V 8-MSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고48,000	Logic Level Gate	20V	-	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA (Min)	5.25nC @ 4.5V	290pF @ 15V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
FDS9958	Fairchild/ON Semiconductor	MOSFET 2P-CH 60V 2.9A 8-SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고75,852	Logic Level Gate	60V	2.9A	105 mOhm @ 2.9A, 10V	3V @ 250µA	23nC @ 10V	1020pF @ 30V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDG6332C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고1,468,308	Logic Level Gate	20V	700mA, 600mA	300 mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	113pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJ500EPTR	onsemi	MOSFET N/P-CH 40V DPAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AOCA32106E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 25A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (1.84x1.96)	패키지: -	Request a Quote	-	12V	25A (Ta)	3.4Ohm @ 5A, 4.5V	1.1V @ 250µA	23nC @ 4.5V	-	2.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (1.84x1.96)
PJT7802-AU_R1_000A1	Panjit International Inc.	MOSFET 2N-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	1V @ 250µA	0.9nC @ 4.5V	39pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS138AKDWHE3-TP	Micro Commercial Co	MOSFET 2N-CH 50V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V Power - Max: 320mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고14,100	Logic Level Gate	50V	220mA (Tc)	1.6Ohm @ 500mA, 10V	1.45V @ 250µA	1.2nC @ 10V	29.5pF @ 25V	320mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SSM6P69NU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	패키지: -	재고49,242	Logic Level Gate, 1.8V Drive	20V	4A (Ta)	45mOhm @ 3.5A, 10V	1.2V @ 1mA	6.74nC @ 4.5V	480pF @ 10V	1W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
BSC072N03LDGATMA1	Infineon Technologies	MOSFET 2N-CH 30V 11.5A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Power - Max: 57W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	Request a Quote	Logic Level Gate	30V	11.5A	7.2mOhm @ 20A, 10V	2.2V @ 250µA	41nC @ 10V	3500pF @ 15V	57W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
2N7002KDW-AU_R1_000A1	Panjit International Inc.	MOSFET 2N-CH 60V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고60,576	-	60V	250mA (Ta)	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.8nC @ 5V	35pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSC750N10NDGATMA1	Infineon Technologies	MOSFET 2N-CH 100V 3.2A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 26W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	Request a Quote	-	100V	3.2A	75mOhm @ 13A, 10V	4V @ 12µA	11nC @ 10V	720pF @ 50V	26W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
MSCMC120AM02CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 742A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 742A (Tc) Rds On (Max) @ Id, Vgs: 2.85mOhm @ 600A, 20V Vgs(th) (Max) @ Id: 4V @ 180mA Gate Charge (Qg) (Max) @ Vgs: 1932nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 33500pF @ 1000V Power - Max: 3200W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	패키지: -	Request a Quote	-	1200V (1.2kV)	742A (Tc)	2.85mOhm @ 600A, 20V	4V @ 180mA	1932nC @ 20V	33500pF @ 1000V	3200W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
SIZF918DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고18,000	-	30V	23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)	4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V	2.4V @ 250µA, 2.3V @ 250µA	22nC @ 10V, 56nC @ 10V	1060pF @ 15V, 2650pF @ 15V	3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
DMN3061SVT-13	Diodes Incorporated	MOSFET 2N-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	3.4A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	6.6nC @ 10V	278pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
RF1K4915496	Fairchild Semiconductor	MOSFET 2N-CH 60V 2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	60V	2A (Ta)	130mOhm @ 2A, 10V	4V @ 250µA	32nC @ 20V	340pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

JANTXV2N7335

Microsemi Corporation

MOSFET 4P-CH 100V 0.75A MO-036AB

FET Type: 4 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

패키지: 14-DIP (0.300", 7.62mm)

재고4,144

Standard

100V

750mA

1.4 Ohm @ 500mA, 10V

4V @ 250µA

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

AON2809

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 2A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)

패키지: 6-WDFN Exposed Pad

재고2,096

Logic Level Gate

12V

2A

68 mOhm @ 2A, 4.5V

900mV @ 250µA

4.4nC @ 4.5V

415pF @ 6V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN-EP (2x2)

SI5906DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK FET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

패키지: PowerPAK? ChipFET? Dual

재고72,000

Logic Level Gate

30V

6A

31 mOhm @ 4.8A, 10V

2.2V @ 250µA

8.6nC @ 10V

300pF @ 15V

10.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

SIA912DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고299,640

Logic Level Gate

12V

4.5A

40 mOhm @ 4.2A, 4.5V

1V @ 250µA

11.5nC @ 8V

400pF @ 6V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

APTM120TA57FPG

Microsemi Corporation

MOSFET 6N-CH 1200V 17A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고5,408

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM20HM16FTG

Microsemi Corporation

MOSFET 4N-CH 200V 104A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고4,320

Standard

200V

104A

19 mOhm @ 52A, 10V

5V @ 2.5mA

140nC @ 10V

7220pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM100H46FT3G

Microsemi Corporation

MOSFET 4N-CH 1000V 19A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 19A
Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고3,552

Standard

1000V (1kV)

19A

552 mOhm @ 16A, 10V

5V @ 2.5mA

260nC @ 10V

6800pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AO9926C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고144,060

Logic Level Gate

20V

7.6A

23 mOhm @ 7.6A, 10V

1.1V @ 250µA

12.5nC @ 10V

630pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC1030UFDB-13

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
Power - Max: 1.36W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고5,632

Standard

12V

5.1A (Ta), 3.9A (Ta)

34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V

1V @ 250µA

12.2nC @ 4.5V, 13nC @ 4.5V

1003pF @ 6V, 1028pF @ 6V

1.36W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MCH6662-TL-W

ON Semiconductor

MOSFET 2N-CH 20V 2A MCPH6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/ MCPH6

패키지: 6-SMD, Flat Leads

재고2,192

Logic Level Gate, 1.8V Drive

20V

2A

160 mOhm @ 1A, 4.5V

1.3V @ 1mA

1.8nC @ 4.5V

128pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SC-88FL/ MCPH6

CMLDM8002AG TR

Central Semiconductor Corp

MOSFET 2P-CH 50V 0.28A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고5,872

Logic Level Gate

50V

280mA

2.5 Ohm @ 500mA, 10V

2.5V @ 250µA

0.72nC @ 4.5V

70pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDG6316P

Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 0.7A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 700mA
Rds On (Max) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 6V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고1,496,640

Logic Level Gate

12V

700mA

270 mOhm @ 700mA, 4.5V

1.5V @ 250µA

2.4nC @ 4.5V

146pF @ 6V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

MCH6613-TL-E

ON Semiconductor

MOSFET N/P-CH 30V MCPH6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

패키지: 6-SMD, Flat Leads

재고175,944

Logic Level Gate

30V

350mA, 200mA

3.7 Ohm @ 80mA, 4V

-

1.58nC @ 10V

7pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

ZXMD63P02XTA

Diodes Incorporated

MOSFET 2P-CH 20V 8-MSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고48,000

Logic Level Gate

20V

-

270 mOhm @ 1.2A, 4.5V

700mV @ 250µA (Min)

5.25nC @ 4.5V

290pF @ 15V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

FDS9958

Fairchild/ON Semiconductor

MOSFET 2P-CH 60V 2.9A 8-SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고75,852

Logic Level Gate

60V

2.9A

105 mOhm @ 2.9A, 10V

3V @ 250µA

23nC @ 10V

1020pF @ 30V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDG6332C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고1,468,308

Logic Level Gate

20V

700mA, 600mA

300 mOhm @ 700mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

113pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJ500EPTR

onsemi

MOSFET N/P-CH 40V DPAK

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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AOCA32106E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (1.84x1.96)

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12V

25A (Ta)

3.4Ohm @ 5A, 4.5V

1.1V @ 250µA

23nC @ 4.5V

-

2.8W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (1.84x1.96)

PJT7802-AU_R1_000A1

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

1V @ 250µA

0.9nC @ 4.5V

39pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSS138AKDWHE3-TP

Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V
Power - Max: 320mW (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고14,100

Logic Level Gate

50V

220mA (Tc)

1.6Ohm @ 500mA, 10V

1.45V @ 250µA

1.2nC @ 10V

29.5pF @ 25V

320mW (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SSM6P69NU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

패키지: -

재고49,242

Logic Level Gate, 1.8V Drive

20V

4A (Ta)

45mOhm @ 3.5A, 10V

1.2V @ 1mA

6.74nC @ 4.5V

480pF @ 10V

1W (Ta)

150°C

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

BSC072N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Power - Max: 57W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

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Logic Level Gate

30V

11.5A

7.2mOhm @ 20A, 10V

2.2V @ 250µA

41nC @ 10V

3500pF @ 15V

57W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

2N7002KDW-AU_R1_000A1

Panjit International Inc.

MOSFET 2N-CH 60V 0.25A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고60,576

-

60V

250mA (Ta)

3Ohm @ 500mA, 10V

2.5V @ 250µA

0.8nC @ 5V

35pF @ 25V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSC750N10NDGATMA1

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Power - Max: 26W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

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100V

3.2A

75mOhm @ 13A, 10V

4V @ 12µA

11nC @ 10V

720pF @ 50V

26W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

MSCMC120AM02CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 742A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 742A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 600A, 20V
Vgs(th) (Max) @ Id: 4V @ 180mA
Gate Charge (Qg) (Max) @ Vgs: 1932nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 33500pF @ 1000V
Power - Max: 3200W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

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1200V (1.2kV)

742A (Tc)

2.85mOhm @ 600A, 20V

4V @ 180mA

1932nC @ 20V

33500pF @ 1000V

3200W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

SIZF918DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V
Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고18,000

-

30V

23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)

4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

2.4V @ 250µA, 2.3V @ 250µA

22nC @ 10V, 56nC @ 10V

1060pF @ 15V, 2650pF @ 15V

3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

DMN3061SVT-13

Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Power - Max: 880mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

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30V

3.4A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

6.6nC @ 10V

278pF @ 15V

880mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

RF1K4915496

Fairchild Semiconductor

MOSFET 2N-CH 60V 2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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60V

2A (Ta)

130mOhm @ 2A, 10V

4V @ 250µA

32nC @ 20V

340pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC