페이지 76 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7752GTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,920	Logic Level Gate	30V	4.6A	30 mOhm @ 4.6A, 10V	2V @ 250µA	9nC @ 4.5V	861pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7530TR	Infineon Technologies	MOSFET 2N-CH 20V 5.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고15,276	Standard	20V	5.4A	30 mOhm @ 5.4A, 4.5V	1.2V @ 250µA	26nC @ 4.5V	1310pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
VQ1001P-2	Vishay Siliconix	MOSFET 4N-CH 30V 0.83A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 830mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	패키지: -	재고18,936	Logic Level Gate	30V	830mA	1.75 Ohm @ 200mA, 5V	2.5V @ 1mA	-	110pF @ 15V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
AO4932	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 11A/8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 8A Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고808,692	Logic Level Gate	30V	11A, 8A	12.5 mOhm @ 11A, 10V	2.1V @ 250µA	24nC @ 10V	1400pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLJD2105LTBG	ON Semiconductor	MOSFET N/P-CH 8V 2.5A 6-WDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 520mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고36,000	Standard	8V	2.5A	50 mOhm @ 4A, 4.5V	1V @ 250µA	-	-	520mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
SI1026X-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 0.305A SOT563F FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고1,760,604	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA, 10V	2.5V @ 250µA	0.6nC @ 4.5V	30pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
GMM3X100-01X1-SMD	IXYS	MOSFET 6N-CH 100V 90A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	패키지: 24-SMD, Gull Wing	재고6,000	Standard	100V	90A	-	4.5V @ 1mA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
NTLUD4C26NTAG	ON Semiconductor	MOSFET 2N-CH 30V 9.1A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 2.63W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	패키지: 6-UDFN Exposed Pad	재고6,016	Standard	30V	9.1A (Ta)	21 mOhm @ 6A, 10V	1.1V @ 250µA	9nC @ 4.5V	460pF @ 15V	2.63W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-UDFN (2x2)
EMH2418R-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 9A EMH8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-383FL, EMH8	패키지: 8-SMD, Flat Lead	재고4,592	Logic Level Gate, 2.5V Drive	24V	9A	15 mOhm @ 4A, 4.5V	1.3V @ 1mA	4.4nC @ 4.5V	-	1.3W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-383FL, EMH8
BSO615N G	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,424	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
STS2DNF30L	STMicroelectronics	MOSFET 2N-CH 30V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고928,884	Logic Level Gate	30V	3A	110 mOhm @ 1A, 10V	2.5V @ 250µA	4.5nC @ 10V	121pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD310708ASCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 780mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고4,560	Standard	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
FDS6890A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고56,208	Logic Level Gate	20V	7.5A	18 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	32nC @ 4.5V	2130pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8660-TL-H	ON Semiconductor	MOSFET N/P-CH 30V 4.5A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고3,424	Logic Level Gate	30V	4.5A	59 mOhm @ 2A, 10V	-	4.4nC @ 10V	240pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
DMNH6065SPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 27A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	패키지: -	Request a Quote	-	60V	27A (Tc)	65mOhm @ 15A, 10V	3V @ 250µA	9.5nC @ 10V	466pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
BUK7K6R2-40E-1X	Nexperia USA Inc.	MOSFET 40V 40A LFPAK56D FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	Request a Quote	-	40V	40A (Ta)	5.8mOhm @ 20A, 10V	4V @ 1mA	32.3nC @ 10V	2210pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
UPA2650T1E-E2-AT	Renesas Electronics Corporation	MOSFET 2N-CH 20V 3.8A 6MLP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MLP (3x3)	패키지: -	Request a Quote	Logic Level Gate	20V	3.8A	65mOhm @ 3A, 10V	2V @ 250µA	2.9nC @ 4.5V	220pF @ 10V	1.1W	-	Surface Mount	6-VDFN Exposed Pad	6-MLP (3x3)
CBB021M12FM3T	Wolfspeed, Inc.	SIC 4N-CH 1200V 50A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.9V @ 17mA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	50A (Tj)	28.9mOhm @ 30A, 15V	3.9V @ 17mA	162nC @ 15V	5400pF @ 1000V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
STA509A	Sanken Electric USA Inc.	MOSFET 4N-CH 57V 3A 10SIP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 57V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Power - Max: 4W (Ta), 20W (Tc) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: 10-SIP Supplier Device Package: 10-SIP	패키지: -	Request a Quote	-	57V	3A (Ta)	250mOhm @ 1A, 10V	2.5V @ 250µA	-	200pF @ 10V	4W (Ta), 20W (Tc)	150°C	Through Hole	10-SIP	10-SIP
NDH8302P	Fairchild Semiconductor	MOSFET 2P-CH 20V 2A SUPERSOT 8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	패키지: -	Request a Quote	-	20V	2A (Ta)	130mOhm @ 2A, 4.5V	1V @ 250µA	11nC @ 4.5V	515pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
NDH8321C	Fairchild Semiconductor	MOSFET N/P-CH 20V 3.8A SUPERSOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, 865pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	패키지: -	Request a Quote	-	20V	3.8A (Ta), 2.7A (Ta)	35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V	1V @ 250µA	28nC @ 4.5V, 23nC @ 4.5V	700pF @ 10V, 865pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
IRF7103TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 50V 3A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	패키지: -	재고11,985	-	50V	3A (Ta)	130mOhm @ 3A, 10V	3V @ 250µA	30nC @ 10V	290pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
FDG6332C-F085	onsemi	MOSFET N/P-CH 20V 0.7A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	패키지: -	Request a Quote	Logic Level Gate	20V	700mA, 600mA	300mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	113pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
G20N06D52	Goford Semiconductor	MOSFET 2N-CH 60V 20A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-DFN (4.9x5.75) Supplier Device Package: 8-PowerTDFN	패키지: -	Request a Quote	-	60V	20A (Tc)	30mOhm @ 20A, 10V	2.5V @ 250µA	25nC @ 10V	1326pF @ 30V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
SSF7120	Good-Ark Semiconductor	MOSFET N/P-CH 20V 0.8A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Power - Max: 312mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고17,328	-	20V	800mA (Tc), 400mA (Tc)	300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V	1V @ 250µA	2nC @ 4.5V	75pF @ 10V, 78pF @ 10V	312mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3055LFDBQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 5A 6UDFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	Request a Quote	-	30V	5A (Ta)	40mOhm @ 3A, 4.5V	1.5V @ 250µA	11.2nC @ 10V	458pF @ 15V	810mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMHT3006LFJ-13	Diodes Incorporated	MOSFET 4N-CH 30V 13A 12VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerVDFN Supplier Device Package: V-DFN5045-12 (Type C)	패키지: -	재고8,790	-	30V	13A (Ta)	10mOhm @ 10A, 10V	3V @ 250µA	17nC @ 10V	1171pF @ 15V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerVDFN	V-DFN5045-12 (Type C)
VEC2616-TL-H	onsemi	MOSFET N/P-CH 60V 3A/2.5A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: -	Request a Quote	Logic Level Gate	60V	3A, 2.5A	80mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8

IRF7752GTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,920

Logic Level Gate

30V

4.6A

30 mOhm @ 4.6A, 10V

2V @ 250µA

9nC @ 4.5V

861pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF7530TR

Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고15,276

Standard

20V

5.4A

30 mOhm @ 5.4A, 4.5V

1.2V @ 250µA

26nC @ 4.5V

1310pF @ 15V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

VQ1001P-2

Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

패키지: -

재고18,936

Logic Level Gate

30V

830mA

1.75 Ohm @ 200mA, 5V

2.5V @ 1mA

-

110pF @ 15V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

AO4932

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 8A
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고808,692

Logic Level Gate

30V

11A, 8A

12.5 mOhm @ 11A, 10V

2.1V @ 250µA

24nC @ 10V

1400pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLJD2105LTBG

ON Semiconductor

MOSFET N/P-CH 8V 2.5A 6-WDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 520mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고36,000

Standard

8V

2.5A

50 mOhm @ 4A, 4.5V

1V @ 250µA

-

520mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

SI1026X-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SOT563F

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고1,760,604

Logic Level Gate

60V

305mA

1.4 Ohm @ 500mA, 10V

2.5V @ 250µA

0.6nC @ 4.5V

30pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

GMM3X100-01X1-SMD

IXYS

MOSFET 6N-CH 100V 90A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

패키지: 24-SMD, Gull Wing

재고6,000

Standard

100V

90A

-

4.5V @ 1mA

90nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

NTLUD4C26NTAG

ON Semiconductor

MOSFET 2N-CH 30V 9.1A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 2.63W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

패키지: 6-UDFN Exposed Pad

재고6,016

Standard

30V

9.1A (Ta)

21 mOhm @ 6A, 10V

1.1V @ 250µA

9nC @ 4.5V

460pF @ 15V

2.63W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-UDFN (2x2)

EMH2418R-TL-H

ON Semiconductor

MOSFET 2N-CH 24V 9A EMH8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-383FL, EMH8

패키지: 8-SMD, Flat Lead

재고4,592

Logic Level Gate, 2.5V Drive

24V

9A

15 mOhm @ 4A, 4.5V

1.3V @ 1mA

4.4nC @ 4.5V

-

1.3W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-383FL, EMH8

BSO615N G

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,424

Logic Level Gate

60V

2.6A

150 mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

STS2DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고928,884

Logic Level Gate

30V

3A

110 mOhm @ 1A, 10V

2.5V @ 250µA

4.5nC @ 10V

121pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD310708ASCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 780mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고4,560

Standard

8V

-

780mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

FDS6890A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고56,208

Logic Level Gate

20V

7.5A

18 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

32nC @ 4.5V

2130pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8660-TL-H

ON Semiconductor

MOSFET N/P-CH 30V 4.5A ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고3,424

Logic Level Gate

30V

4.5A

59 mOhm @ 2A, 10V

-

4.4nC @ 10V

240pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

DMNH6065SPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 27A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Power - Max: 2.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

패키지: -

Request a Quote

-

60V

27A (Tc)

65mOhm @ 15A, 10V

3V @ 250µA

9.5nC @ 10V

466pF @ 25V

2.4W (Ta), 68W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

BUK7K6R2-40E-1X

Nexperia USA Inc.

MOSFET 40V 40A LFPAK56D

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Power - Max: 68W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

Request a Quote

-

40V

40A (Ta)

5.8mOhm @ 20A, 10V

4V @ 1mA

32.3nC @ 10V

2210pF @ 25V

68W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

UPA2650T1E-E2-AT

Renesas Electronics Corporation

MOSFET 2N-CH 20V 3.8A 6MLP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MLP (3x3)

패키지: -

Request a Quote

Logic Level Gate

20V

3.8A

65mOhm @ 3A, 10V

2V @ 250µA

2.9nC @ 4.5V

220pF @ 10V

1.1W

-

Surface Mount

6-VDFN Exposed Pad

6-MLP (3x3)

CBB021M12FM3T

Wolfspeed, Inc.

SIC 4N-CH 1200V 50A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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1200V (1.2kV)

50A (Tj)

28.9mOhm @ 30A, 15V

3.9V @ 17mA

162nC @ 15V

5400pF @ 1000V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

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STA509A

Sanken Electric USA Inc.

MOSFET 4N-CH 57V 3A 10SIP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 57V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
Power - Max: 4W (Ta), 20W (Tc)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: 10-SIP
Supplier Device Package: 10-SIP

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57V

3A (Ta)

250mOhm @ 1A, 10V

2.5V @ 250µA

-

200pF @ 10V

4W (Ta), 20W (Tc)

150°C

Through Hole

10-SIP

NDH8302P

Fairchild Semiconductor

MOSFET 2P-CH 20V 2A SUPERSOT 8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package: SuperSOT™-8

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20V

2A (Ta)

130mOhm @ 2A, 4.5V

1V @ 250µA

11nC @ 4.5V

515pF @ 10V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSOP (0.130", 3.30mm Width)

SuperSOT™-8

NDH8321C

Fairchild Semiconductor

MOSFET N/P-CH 20V 3.8A SUPERSOT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, 865pF @ 10V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package: SuperSOT™-8

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20V

3.8A (Ta), 2.7A (Ta)

35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V

1V @ 250µA

28nC @ 4.5V, 23nC @ 4.5V

700pF @ 10V, 865pF @ 10V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSOP (0.130", 3.30mm Width)

SuperSOT™-8

IRF7103TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 50V 3A 8DSO-902

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-902

패키지: -

재고11,985

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50V

3A (Ta)

130mOhm @ 3A, 10V

3V @ 250µA

30nC @ 10V

290pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8-902

FDG6332C-F085

onsemi

MOSFET N/P-CH 20V 0.7A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)

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Logic Level Gate

20V

700mA, 600mA

300mOhm @ 700mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

113pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88 (SC-70-6)

G20N06D52

Goford Semiconductor

MOSFET 2N-CH 60V 20A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-DFN (4.9x5.75)
Supplier Device Package: 8-PowerTDFN

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60V

20A (Tc)

30mOhm @ 20A, 10V

2.5V @ 250µA

25nC @ 10V

1326pF @ 30V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-DFN (4.9x5.75)

8-PowerTDFN

SSF7120

Good-Ark Semiconductor

MOSFET N/P-CH 20V 0.8A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Power - Max: 312mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고17,328

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20V

800mA (Tc), 400mA (Tc)

300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V

1V @ 250µA

2nC @ 4.5V

75pF @ 10V, 78pF @ 10V

312mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3055LFDBQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 5A 6UDFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Power - Max: 810mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

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30V

5A (Ta)

40mOhm @ 3A, 4.5V

1.5V @ 250µA

11.2nC @ 10V

458pF @ 15V

810mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMHT3006LFJ-13

Diodes Incorporated

MOSFET 4N-CH 30V 13A 12VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerVDFN
Supplier Device Package: V-DFN5045-12 (Type C)

패키지: -

재고8,790

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30V

13A (Ta)

10mOhm @ 10A, 10V

3V @ 250µA

17nC @ 10V

1171pF @ 15V

1.3W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerVDFN

V-DFN5045-12 (Type C)

VEC2616-TL-H

onsemi

MOSFET N/P-CH 60V 3A/2.5A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

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Logic Level Gate

60V

3A, 2.5A

80mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8