페이지 68 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  68/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA120251EAV2XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,584
-
-
-
-
-
-
-
-
-
-
PTFA240451E V1 R250
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.48GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
패키지: 2-Flatpack, Fin Leads
재고7,152
2.48GHz
14dB
28V
10µA
-
450mA
45W
65V
2-Flatpack, Fin Leads
H-30265-2
PTFA211801E V4
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고3,040
2.14GHz
15.5dB
28V
10µA
-
1.2A
35W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA261301E V1
Infineon Technologies

IC FET RF LDMOS 130W H-30260-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 130W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30260-2
패키지: 2-Flatpack, Fin Leads
재고7,104
2.68GHz
13.5dB
28V
10µA
-
1.4A
130W
65V
2-Flatpack, Fin Leads
H-30260-2
MAGX-001214-250L00
M/A-Com Technology Solutions

TRANSISTOR GAN 250W 1.2-1.4GHZ

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17.6dB
  • Voltage - Test: 50V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 250W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,976
1.2GHz ~ 1.4GHz
17.6dB
50V
9A
-
250mA
250W
65V
-
-
PD57045S
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고6,112
945MHz
14.5dB
28V
5A
-
250mA
45W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRF6S23140HR5
NXP

FET RF 68V 2.39GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 28W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고2,976
2.39GHz
15.2dB
28V
-
-
1.3A
28W
68V
NI-880
NI-880
BLF6G20LS-140,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 39A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 35.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,840
1.93GHz ~ 1.99GHz
16.5dB
28V
39A
-
1A
35.5W
65V
SOT-502B
SOT502B
BLF6G27S-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 7W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
패키지: SOT-608B
재고5,232
2.7GHz
18dB
28V
20A
-
350mA
7W
65V
SOT-608B
CDFM2
BF1207,115
NXP

FET RF 6V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.3dB
  • Current - Test: 18mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고2,528
400MHz
30dB
5V
30mA
1.3dB
18mA
-
6V
6-TSSOP, SC-88, SOT-363
6-TSSOP
PTFB211803ELV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
패키지: H-33288-6
재고4,352
2.17GHz
17.5dB
30V
-
-
1.3A
40W
65V
H-33288-6
H-33288-6
BLF8G38LS-75VU
Ampleon USA Inc.

RF FET LDMOS 65V 15.5DB SOT1239B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1239B
  • Supplier Device Package: CDFM6
패키지: SOT-1239B
재고2,032
3.4GHz ~ 3.6GHz
15.5dB
30V
-
-
600mA
20W
65V
SOT-1239B
CDFM6
MRF8P9040GNR1
NXP

FET RF 2CH 70V 960MHZ TO-270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320mA
  • Power - Output: 4W
  • Voltage - Rated: 70V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고3,344
960MHz
19.1dB
28V
-
-
320mA
4W
70V
TO-270BB
TO-270 WB-4 Gull
VRF3933
Microsemi Corporation

MOSF RF N CH 250V 20A M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 250V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고6,720
30MHz
22dB
100V
20A
-
250mA
300W
250V
M177
M177
BCF020T
BeRex Inc

RF MOSFET MESFET 8V DIE

  • Transistor Type: MESFET
  • Frequency: 26.5GHz
  • Gain: 12.1dB
  • Voltage - Test: 8 V
  • Current Rating: 80mA
  • Noise Figure: 1.1dB
  • Current - Test: 40 mA
  • Power - Output: 20dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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26.5GHz
12.1dB
8 V
80mA
1.1dB
40 mA
20dBm
12 V
Die
Die
PTFC260202FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 20dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
20dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
BLP15M9S70XY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 17.8dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 70W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
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2GHz
17.8dB
32 V
1.4µA
-
400 mA
70W
65 V
TO-270AA
TO-270-2F-1
BLC10G19XS-600AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.995GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 2.8 A
  • Power - Output: 750W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
Request a Quote
1.93GHz ~ 1.995GHz
15dB
30 V
2.8µA
-
2.8 A
750W
65 V
SOT-1258-4
SOT1258-4
VMMK-1218-BLKG
Broadcom Limited

RF MOSFET E-PHEMT 3V 0402

  • Transistor Type: E-pHEMT
  • Frequency: 10GHz
  • Gain: 9dB
  • Voltage - Test: 3 V
  • Current Rating: 100mA
  • Noise Figure: 0.81dB
  • Current - Test: 20 mA
  • Power - Output: 12dBm
  • Voltage - Rated: 5 V
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402
패키지: -
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10GHz
9dB
3 V
100mA
0.81dB
20 mA
12dBm
5 V
0402 (1005 Metric)
0402
PTFA041501F-V4-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 150W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
패키지: -
Request a Quote
470MHz
21dB
28 V
-
-
900 mA
150W
65 V
2-Flatpack, Fin Leads, Flanged
H-37248-2
CGH40045P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440206

  • Transistor Type: HEMT
  • Frequency: 4GHz
  • Gain: 14dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 45W
  • Voltage - Rated: 84 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
패키지: -
재고192
4GHz
14dB
28 V
-
-
400 mA
45W
84 V
440206
440206
MRF101BN
NXP

RF MOSFET LDMOS 50V TO220-3

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 250MHz
  • Gain: 21.1dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 115W
  • Voltage - Rated: 133 V
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
재고510
1.8MHz ~ 250MHz
21.1dB
50 V
10µA
-
100 mA
115W
133 V
TO-220-3
TO-220-3
MRFX600HR5
NXP

RF MOSFET LDMOS 65V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 400MHz
  • Gain: 26.4dB
  • Voltage - Test: 65 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 600W
  • Voltage - Rated: 179 V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: -
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1.8MHz ~ 400MHz
26.4dB
65 V
10µA
-
100 mA
600W
179 V
NI-780-4
NI-780-4
BLC10G22XS-301AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS DFM6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
패키지: -
재고102
2.11GHz ~ 2.17GHz
15dB
-
1.4µA
-
-
350W
65 V
SOT-1275-1
DFM6
PTFB212503FL-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-34288-4

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.1dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 55W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-4/2
패키지: -
Request a Quote
2.17GHz
18.1dB
30 V
-
-
1.85 A
55W
65 V
2-Flatpack, Fin Leads, Flanged
H-34288-4/2
BB304CDW-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 29dB
  • Voltage - Test: 9 V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 12 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: -
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-
29dB
9 V
25mA
1.2dB
-
-
12 V
SC-82A, SOT-343
CMPAK-4
B11G3338N80DX
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 38dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
패키지: -
Request a Quote
3.3GHz ~ 3.8GHz
38dB
-
1.4µA
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)
GTRB424908FC-1-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT H-37248KC-6

  • Transistor Type: HEMT
  • Frequency: 3.7GHz ~ 4GHz
  • Gain: 12dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 450W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248KC-6/2
  • Supplier Device Package: H-37248KC-6/2
패키지: -
Request a Quote
3.7GHz ~ 4GHz
12dB
-
-
-
-
450W
48 V
H-37248KC-6/2
H-37248KC-6/2