페이지 70 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  70/138
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설명
패키지
재고
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PXAC261202FCV1R250XTMA1
Infineon Technologies

FET RF 2CH 65V 2.61GHZ

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.61GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 230mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고6,160
2.61GHz
13.5dB
28V
-
-
230mA
28W
65V
H-37248-4
H-37248-4
PTFB093608FVV2XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,752
-
-
-
-
-
-
-
-
-
-
PTF210101M V1
Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-RFP-10
패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
재고6,288
2.17GHz
15dB
28V
1µA
-
180mA
10W
65V
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
PG-RFP-10
MAGX-0110087
M/A-Com Technology Solutions

HEMT N-CH 600W 1030-1090MHZ

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,968
-
-
-
-
-
-
-
-
-
-
MRF8S26060HR5
NXP

FET RF 65V 2.69GHZ

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 16.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 15.5W
  • Voltage - Rated: 65V
  • Package / Case: NI-400-240
  • Supplier Device Package: NI-400-240
패키지: NI-400-240
재고4,304
2.69GHz
16.3dB
28V
-
-
450mA
15.5W
65V
NI-400-240
NI-400-240
BLA1011-200R,112
Ampleon USA Inc.

RF FET LDMOS 75V 13DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 13dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 200W
  • Voltage - Rated: 75V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고7,392
1.03GHz ~ 1.09GHz
13dB
36V
-
-
150mA
200W
75V
SOT-502A
LDMOST
BLF6G22-180PN,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고3,056
2.11GHz ~ 2.17GHz
17.5dB
32V
-
-
1.6A
50W
65V
SOT539A
SOT539A
MRF9210R5
NXP

FET RF 65V 880MHZ 860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 16.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
패키지: NI-860C3
재고5,152
880MHz
16.5dB
26V
-
-
1.9A
40W
65V
NI-860C3
NI-860C3
2N5486_D26Z
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 20mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,896
400MHz
-
15V
20mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF1100WR,115
NXP

MOSFET N-CH 14V 30MA SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 9V
  • Current Rating: 30mA
  • Noise Figure: 2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 14V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고2,224
800MHz
-
9V
30mA
2dB
10mA
-
14V
SC-82A, SOT-343
CMPAK-4
BF998,215
NXP

MOSFET NCH DUAL GATE 12V SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 30mA
  • Noise Figure: 0.6dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고7,376
200MHz
-
8V
30mA
0.6dB
10mA
-
12V
TO-253-4, TO-253AA
SOT-143B
BLF8G09LS-270WU
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 718.5MHz ~ 725.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
패키지: SOT-1244B
재고2,048
718.5MHz ~ 725.5MHz
20dB
28V
-
-
2A
67W
65V
SOT-1244B
CDFM6
VRF150MP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M174

  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 170V
  • Package / Case: M174
  • Supplier Device Package: M174
패키지: M174
재고3,280
150MHz
11dB
50V
1mA
-
250mA
150W
170V
M174
M174
A2T23H160-24SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 17.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4L2L
  • Supplier Device Package: NI-780S-4L2L
패키지: NI-780S-4L2L
재고2,432
2.3GHz
17.7dB
28V
-
-
350mA
28W
65V
NI-780S-4L2L
NI-780S-4L2L
ATF-53189-BLK
Broadcom Limited

IC PHEMT 2GHZ 4V 135MA SOT-89

  • Transistor Type: E-pHEMT
  • Frequency: 900MHz
  • Gain: 17.2dB
  • Voltage - Test: 4V
  • Current Rating: 300mA
  • Noise Figure: 0.8dB
  • Current - Test: 135mA
  • Power - Output: 21.7dBm
  • Voltage - Rated: 7V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고3,344
900MHz
17.2dB
4V
300mA
0.8dB
135mA
21.7dBm
7V
TO-243AA
SOT-89-3
MMRF1312HSR5
NXP

TRANS 960-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.034GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고3,856
1.034GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S
NI-1230-4S
MRF157
M/A-Com Technology Solutions

FET RF 125V 80MHZ 368-03 1=1PC

  • Transistor Type: N-Channel
  • Frequency: 80MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: 60A
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 600W
  • Voltage - Rated: 125V
  • Package / Case: 368-03
  • Supplier Device Package: 368-03, Style 2
패키지: 368-03
재고5,168
80MHz
21dB
50V
60A
-
800mA
600W
125V
368-03
368-03, Style 2
BLP05M7200Y
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT1139

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 440MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2mA
  • Power - Output: 210W
  • Voltage - Rated: 65V
  • Package / Case: 4-HSOPF, SOT-1138
  • Supplier Device Package: 4-HSOP
패키지: 4-HSOPF, SOT-1138
재고2,576
440MHz
21dB
28V
-
-
2mA
210W
65V
4-HSOPF, SOT-1138
4-HSOP
hot MW6S010GNR1
NXP

FET RF 68V 960MHZ TO270-2GW

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
패키지: TO-270-2 Gull Wing
재고17,424
960MHz
18dB
28V
-
-
125mA
10W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
2N4340
Central Semiconductor Corp

JFET N-CH 50V TO18

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: -
  • Noise Figure: 1dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 50V
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고14,502
1kHz
-
15V
-
1dB
-
-
50V
TO-206AA, TO-18-3 Metal Can
TO-18
hot 2SK209-GR(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: -
  • Noise Figure: 1dB
  • Current - Test: 500µA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고15,804
1kHz
-
10V
-
1dB
500µA
-
-
TO-236-3, SC-59, SOT-23-3
SC-59
BLF882SU
Ampleon USA Inc.

RF FET LDMOS 104V 20.6DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 705MHz
  • Gain: 20.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 104V
  • Package / Case: SOT-502B
  • Supplier Device Package: CDFM4
패키지: SOT-502B
재고7,552
705MHz
20.6dB
50V
-
-
100mA
200W
104V
SOT-502B
CDFM4
MRF085HR5
NXP

RF MOSFET LDMOS 50V NI650

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 1.215GHz
  • Gain: 25.6dB
  • Voltage - Test: 50 V
  • Current Rating: 7µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 85W
  • Voltage - Rated: 133 V
  • Package / Case: NI-650H-4L
  • Supplier Device Package: NI-650H-4L
패키지: -
Request a Quote
1.8MHz ~ 1.215GHz
25.6dB
50 V
7µA
-
100 mA
85W
133 V
NI-650H-4L
NI-650H-4L
BLF8G22LS-270
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.7dB
  • Voltage - Test: 28 V
  • Current Rating: 4.2µA
  • Noise Figure: -
  • Current - Test: 2.4 A
  • Power - Output: 270W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
17.7dB
28 V
4.2µA
-
2.4 A
270W
65 V
SOT-502B
SOT502B
AFM907NT1
NXP

RF MOSFET LDMOS 10.8V 16DFN

  • Transistor Type: LDMOS
  • Frequency: 136MHz ~ 941MHz
  • Gain: -
  • Voltage - Test: 10.8 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 8.4W
  • Voltage - Rated: 30 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
패키지: -
Request a Quote
136MHz ~ 941MHz
-
10.8 V
10µA
-
100 mA
8.4W
30 V
16-VDFN Exposed Pad
16-DFN (4x6)
ART800PEY
Ampleon USA Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고282
-
-
-
-
-
-
-
-
-
-
PTVA082407NF-V2-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 4HBSOF

  • Transistor Type: LDMOS
  • Frequency: 746MHz ~ 821MHz
  • Gain: 22.5dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 240W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-4-1
  • Supplier Device Package: PG-HBSOF-4-1
패키지: -
Request a Quote
746MHz ~ 821MHz
22.5dB
48 V
10µA
-
900 mA
240W
105 V
HBSOF-4-1
PG-HBSOF-4-1
C4H2350N10Z
Ampleon USA Inc.

RF MOSFET 6DFN

  • Transistor Type: -
  • Frequency: 2.3GHz ~ 5GHz
  • Gain: 19dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 50 V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4.5x4)
패키지: -
재고1,359
2.3GHz ~ 5GHz
19dB
-
-
-
-
-
50 V
6-VDFN Exposed Pad
6-DFN (4.5x4)