페이지 69 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  69/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BLF7G22L-250P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고4,448
2.11GHz ~ 2.17GHz
18.5dB
28V
65A
-
1.9A
70W
65V
SOT539A
SOT539A
ON5262,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,216
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF7S18125BHSR3
NXP

FET RF 65V 1.93GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고2,480
1.93GHz
16.5dB
28V
-
-
1.1A
125W
65V
NI-780S
NI-780S
MRF7S16150HSR3
NXP

FET RF 65V 1.66GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.6GHz ~ 1.66GHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,680
1.6GHz ~ 1.66GHz
19.7dB
28V
-
-
1.5A
32W
65V
NI-780S
NI-780S
MRF6S18140HSR3
NXP

FET RF 68V 1.88GHZ NI880S

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 29W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고4,160
1.88GHz
16dB
28V
-
-
1.2A
29W
68V
NI-880S
NI-880S
MRF9045LR1
NXP

FET RF 65V 945MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 18.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고5,376
945MHz
18.8dB
28V
-
-
350mA
45W
65V
NI-360
NI-360
hot MRF6S9125NR1
NXP

FET RF 68V 880MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,816
880MHz
20.2dB
28V
-
-
950mA
27W
68V
TO-270AB
TO-270 WB-4
BLF4G20LS-110B,112
NXP

FET RF 65V 1.99GHZ SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.4dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 650mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,136
1.93GHz ~ 1.99GHz
13.4dB
28V
12A
-
650mA
100W
65V
SOT-502B
SOT502B
PTFA180701EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고4,944
1.805GHz ~ 1.88GHz
16.5dB
28V
10µA
-
550mA
70W
65V
2-Flatpack, Fin Leads, Flanged
H-36265-2
BLF6G15L-500H,112
Ampleon USA Inc.

RF FET LDMOS 100V 16DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.45Ghz ~ 1.49GHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 45A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 65W
  • Voltage - Rated: 100V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고3,904
1.45Ghz ~ 1.49GHz
16dB
50V
45A
-
1.3A
65W
100V
SOT539A
SOT539A
BLC9G20XS-400AVTY
Ampleon USA Inc.

BLC9G20XS-400AVT/SOT1258/REELD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,936
-
-
-
-
-
-
-
-
-
-
MMRF1018NR1
NXP

FET RF 120V 860MHZ

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 120V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고2,432
860MHz
22dB
50V
-
-
350mA
18W
120V
TO-270-4
TO-270 WB-4
MRF8S9120NR3
NXP

FET RF 70V 960MHZ QM780-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 33W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고7,984
960MHz
19.8dB
28V
-
-
800mA
33W
70V
OM-780-2
OM-780-2
MMRF1320NR1
NXP

TRANS 1.8--600MHZ 150W CW 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.1dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 133V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고5,152
230MHz
26.1dB
50V
-
-
100mA
150W
133V
TO-270-4
TO-270 WB-4
BLM7G1822S-20PBY
Ampleon USA Inc.

RF FET LDMOS 65V 32.3DB SOT12111

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 32.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1211-1
재고6,300
2.17GHz
32.3dB
28V
-
-
-
2W
65V
SOT-1211-1
16-HSOP
BLF888ESU
Ampleon USA Inc.

RF FET LDMOS 104V 17DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 600MHz ~ 700MHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 750W
  • Voltage - Rated: 104V
  • Package / Case: SOT539B
  • Supplier Device Package: -
패키지: SOT539B
재고4,800
600MHz ~ 700MHz
17dB
50V
-
-
600mA
750W
104V
SOT539B
-
BF1105R,215
NXP

MOSFET N-CH 7V 30MA SOT-143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 20dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.7dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고26,514
800MHz
20dB
5V
30mA
1.7dB
-
-
7V
SOT-143R
SOT-143R
PTVA084007NF-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 4HBSOF

  • Transistor Type: LDMOS
  • Frequency: 755MHz ~ 805MHz
  • Gain: 23.6dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 370W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-4-2
  • Supplier Device Package: PG-HBSOF-4-2
패키지: -
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755MHz ~ 805MHz
23.6dB
48 V
10µA
-
800 mA
370W
105 V
HBSOF-4-2
PG-HBSOF-4-2
PXAC201202FC-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 240 mA
  • Power - Output: 16W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.2GHz
17dB
28 V
-
-
240 mA
16W
65 V
H-37248-4
H-37248-4
ART150PEZ
Ampleon USA Inc.

ART150PE/REELDP

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 650MHz
  • Gain: 31.2dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 150W
  • Voltage - Rated: 200 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
Request a Quote
1MHz ~ 650MHz
31.2dB
65 V
1.4µA
-
500 mA
150W
200 V
TO-270AA
TO-270-2F-1
PXAC201202FC-V2
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 240 mA
  • Power - Output: 16W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.2GHz
17dB
28 V
-
-
240 mA
16W
65 V
H-37248-4
H-37248-4
BLF7G20LS-90PH
Ampleon USA Inc.

RF MOSFET LDMOS 28V LDMOST

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.5dB
  • Voltage - Test: 28 V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 550 mA
  • Power - Output: 40W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1121B
  • Supplier Device Package: LDMOST
패키지: -
Request a Quote
1.81GHz ~ 1.88GHz
19.5dB
28 V
18A
-
550 mA
40W
65 V
SOT-1121B
LDMOST
PXAC201602FC-V1
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 17.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360 mA
  • Power - Output: 22.5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.02GHz
17.7dB
28 V
-
-
360 mA
22.5W
65 V
H-37248-4
H-37248-4
BLP15M9S70GXY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 23.5dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 70W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
패키지: -
Request a Quote
1.3GHz
23.5dB
32 V
1.4µA
-
200 mA
70W
65 V
TO-270BA
TO-270-2G-1
PTFA211801E-V5-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 140W
  • Voltage - Rated: 65 V
  • Package / Case: H-36260-2
  • Supplier Device Package: H-36260-2
패키지: -
Request a Quote
2.14GHz
15.5dB
28 V
-
-
1.2 A
140W
65 V
H-36260-2
H-36260-2
GTRB204402FC-1-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 1.93GHz ~ 2.02GHz
  • Gain: 16.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
1.93GHz ~ 2.02GHz
16.3dB
-
-
-
-
350W
48 V
H-37248C-4
H-37248C-4
A5G35H110NT4
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 3.3GHz ~ 3.7GHz
  • Gain: 15.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 15.1W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
패키지: -
Request a Quote
3.3GHz ~ 3.7GHz
15.3dB
48 V
-
-
70 mA
15.1W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
BLC10G22XS-602AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 687W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
15.4dB
30 V
2.8µA
-
1.2 A
687W
65 V
SOT-1258-4
SOT1258-4