페이지 71 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  71/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB262406EV1XWSA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,624
-
-
-
-
-
-
-
-
-
-
MAGX-000035-09000P
M/A-Com Technology Solutions

FET RF 65V 3.5GHZ 14DFN

  • Transistor Type: HEMT
  • Frequency: 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 50V
  • Current Rating: 6mA
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: 14-VDFN Exposed Pad
  • Supplier Device Package: 14-DFN (3x6)
패키지: 14-VDFN Exposed Pad
재고7,824
3.5GHz
13dB
50V
6mA
-
200mA
14W
65V
14-VDFN Exposed Pad
14-DFN (3x6)
MAGX-000035-030000
M/A-Com Technology Solutions

TRANSISTOR GAN 30WCW 0.03-3.5GHZ

  • Transistor Type: HEMT
  • Frequency: 1MHz
  • Gain: 13.6dB
  • Voltage - Test: 50V
  • Current Rating: 2.5mA
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 30W
  • Voltage - Rated: 50V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,792
1MHz
13.6dB
50V
2.5mA
-
100mA
30W
50V
-
-
MRF8HP21130HSR5
NXP

FET RF 2CH 65V 2.17GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,952
2.17GHz
14dB
28V
-
-
360mA
28W
65V
NI-780S-4
NI-780S-4
hot MRF282ZR1
NXP

FET RF 65V 2GHZ NI-200Z

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-200Z
  • Supplier Device Package: NI-200Z
패키지: NI-200Z
재고3,472
2GHz
11.5dB
26V
-
-
75mA
10W
65V
NI-200Z
NI-200Z
MRF19045LSR5
NXP

FET RF 65V 1.93GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 14.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 9.5W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S-240
패키지: NI-400S
재고6,320
1.93GHz
14.5dB
26V
-
-
550mA
9.5W
65V
NI-400S
NI-400S-240
MRF9030NBR1
NXP

FET RF 65V 945MHZ TO272-2

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 20dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: TO-270-2
재고2,720
945MHz
20dB
26V
-
-
250mA
30W
65V
TO-270-2
TO-270-2
MRF5S9150HSR3
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 33W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,424
880MHz
19.7dB
28V
-
-
1.5A
33W
68V
NI-780
NI-780
MRF5S21150HSR5
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 12.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고3,712
2.11GHz ~ 2.17GHz
12.5dB
28V
-
-
1.3A
33W
65V
NI-880S
NI-880S
J310_D75Z
Fairchild/ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,752
450MHz
12dB
10V
60mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS9G2731L-400U
Ampleon USA Inc.

BLS9G2731L-400/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,840
-
-
-
-
-
-
-
-
-
-
MRF6VP41KHR5
NXP

FET RF 2CH 110V 450MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,680
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
BLF2425M7L140,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 140W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고2,368
2.45GHz
18.5dB
28V
-
-
1.3A
140W
65V
SOT-502A
LDMOST
AFT26H160-4S4R3
NXP

FET RF 2CH 65V 2.5GHZ NI880X-4

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz
  • Gain: 14.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-880X-4L4S-8
  • Supplier Device Package: NI-880X-4L4S-8
패키지: NI-880X-4L4S-8
재고6,448
2.5GHz
14.9dB
28V
-
-
500mA
32W
65V
NI-880X-4L4S-8
NI-880X-4L4S-8
AFT05MP075GNR1
NXP

FET RF 2CH 40V 520MHZ TO270-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 520MHz
  • Gain: 18.5dB
  • Voltage - Test: 12.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 70W
  • Voltage - Rated: 40V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고5,152
520MHz
18.5dB
12.5V
-
-
400mA
70W
40V
TO-270BB
TO-270 WB-4 Gull
BLP7G22-05Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 1W
  • Voltage - Rated: 65V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고2,384
2.14GHz
16dB
28V
-
-
55mA
1W
65V
12-VDFN Exposed Pad
12-HVSON (5x6)
LET9070CB
STMicroelectronics

MOSF RF N CH 80V 12A M243

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 80W
  • Voltage - Rated: 80V
  • Package / Case: M243
  • Supplier Device Package: M243
패키지: M243
재고2,240
945MHz
16dB
28V
12A
-
400mA
80W
80V
M243
M243
IXZ308N120
IXYS

RF MOSFET N-CHANNEL DE375

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 1200V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: -
패키지: 6-SMD, Flat Lead Exposed Pad
재고7,776
-
-
-
1mA
-
-
-
1200V
6-SMD, Flat Lead Exposed Pad
-
ARF463AP1G
Microsemi Corporation

RF PWR MOSFET 500V 9A TO-247

  • Transistor Type: N-Channel
  • Frequency: 81.36MHz
  • Gain: 15dB
  • Voltage - Test: 125V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 100W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,128
81.36MHz
15dB
125V
9A
-
-
100W
500V
TO-247-3
TO-247
MMRF1304NR1
NXP

FET RF 133V 512MHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 25.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 25W
  • Voltage - Rated: 133V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고3,616
512MHz
25.4dB
50V
-
-
10mA
25W
133V
TO-270AA
TO-270-2
PXAC260602FC-V1
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 85 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
15.7dB
28 V
-
-
85 mA
5W
65 V
H-37248-4
H-37248-4
BLC9G27XS-380AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-7

  • Transistor Type: LDMOS
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 15.5dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 380W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: SOT-1258-7
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
15.5dB
30 V
2.8µA
-
600 mA
380W
65 V
SOT-1258-7
SOT-1258-7
SD2931-15W
STMicroelectronics

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLF521
Ampleon USA Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MHT1004NR3
NXP

RF MOSFET LDMOS 32V OM780-2

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 15.2dB
  • Voltage - Test: 32 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: -
Request a Quote
2.45GHz
15.2dB
32 V
10µA
-
100 mA
280W
65 V
OM-780-2
OM-780-2
BLP15H9S100GXY
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1483-1

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 100W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
패키지: -
Request a Quote
2GHz
19dB
50 V
1.4µA
-
400 mA
100W
106 V
SOT-1483-1
SOT1483-1
MHTG1200HSR3
NXP

RF MOSFET GAN NI780

  • Transistor Type: GaN
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 50 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
-
-
-
-
-
300W
50 V
NI-780S-4L
NI-780S-4L
ART700FHGJ
Ampleon USA Inc.

RF MOSFET LDMOS 55V SOT1214C

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 450MHz
  • Gain: 28.6dB
  • Voltage - Test: 55 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 700W
  • Voltage - Rated: 177 V
  • Package / Case: SOT-1214C
  • Supplier Device Package: SOT1214C
패키지: -
재고237
1MHz ~ 450MHz
28.6dB
55 V
1.4µA
-
1.2 A
700W
177 V
SOT-1214C
SOT1214C