페이지 88 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-836
Language Translation

* Please refer to the English Version as our Official Version.

트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  88/138
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
NE3520S03-T1C-A
CEL

FET RF 4V 20GHZ S03

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S03
패키지: 4-SMD, Flat Leads
재고3,376
20GHz
13.5dB
2V
70mA
0.65dB
10mA
-
4V
4-SMD, Flat Leads
S03
MRF8S18260HR5
NXP

FET RF 2CH 65V 1.81GHZ NI1230-8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.9dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 74W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110A
  • Supplier Device Package: NI1230-8
패키지: SOT-1110A
재고3,968
1.81GHz
17.9dB
30V
-
-
1.6A
74W
65V
SOT-1110A
NI1230-8
MRF7S35015HSR5
NXP

FET RF 65V 3.5GHZ NI-400S-240

  • Transistor Type: LDMOS
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 15W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S-240
  • Supplier Device Package: NI-400S-240
패키지: NI-400S-240
재고7,680
3.1GHz ~ 3.5GHz
16dB
32V
-
-
50mA
15W
65V
NI-400S-240
NI-400S-240
hot MRF21045LSR3
NXP

FET RF 65V 2.17GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S
패키지: NI-400S
재고24,624
2.17GHz
15dB
28V
-
-
500mA
10W
65V
NI-400S
NI-400S
MRF21045LR3
NXP

FET RF 65V 2.17GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400-240
패키지: NI-400
재고2,144
2.17GHz
15dB
28V
-
-
500mA
10W
65V
NI-400
NI-400-240
MRF6S19120HSR3
NXP

FET RF 68V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고2,720
1.99GHz
15dB
28V
-
-
1A
19W
68V
NI-780S
NI-780S
hot MRF5S19130HR3
NXP

FET RF 65V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 26W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고8,988
1.99GHz
13dB
28V
-
-
1.2A
26W
65V
NI-880
NI-880
hot NE34018-T1
CEL

FET RF 4V 2GHZ SOT-343

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 16dB
  • Voltage - Test: 2V
  • Current Rating: 120mA
  • Noise Figure: 0.6dB
  • Current - Test: 5mA
  • Power - Output: 12dBm
  • Voltage - Rated: 4V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
패키지: SC-82A, SOT-343
재고276,624
2GHz
16dB
2V
120mA
0.6dB
5mA
12dBm
4V
SC-82A, SOT-343
SOT-343
BF1210,115
NXP

FET RF 6V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 31dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 19mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고3,824
400MHz
31dB
5V
30mA
0.9dB
19mA
-
6V
6-TSSOP, SC-88, SOT-363
6-TSSOP
BLF7G22LS-160,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 43W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,328
2.11GHz ~ 2.17GHz
18dB
28V
36A
-
1.3A
43W
65V
SOT-502B
SOT502B
PTFC261402FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,352
2.69GHz
18dB
28V
-
-
900mA
28W
65V
-
-
MMRF1022HSR5
NXP

FET RF 2CH 65V 2.14GHZ NI1230S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 16.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고5,872
2.14GHz
16.2dB
28V
-
-
500mA
63W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLC9G20LS-470AVTY
Ampleon USA Inc.

RF FET LDMOS 65V 15.7DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 15.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 470W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: SOT-1258-3
패키지: SOT-1258-3
재고5,232
1.81GHz ~ 1.88GHz
15.7dB
28V
-
-
400mA
470W
65V
SOT-1258-3
SOT-1258-3
BLC10G20LS-240PWTZ
Ampleon USA Inc.

BLC10G20LS-240PWT/SOT1275/REEL

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,320
-
-
-
-
-
-
-
-
-
-
BLP10H660PGY
Ampleon USA Inc.

BLP10H660PG/SOT1224/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,824
-
-
-
-
-
-
-
-
-
-
hot ATF-36163-TR2G
Broadcom Limited

FET RF 3V 4GHZ SOT-363

  • Transistor Type: pHEMT FET
  • Frequency: 4GHz
  • Gain: 15.8dB
  • Voltage - Test: 2V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: 5dBm
  • Voltage - Rated: 3V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고15,000
4GHz
15.8dB
2V
40mA
0.6dB
15mA
5dBm
3V
6-TSSOP, SC-88, SOT-363
SOT-363
SD57060
STMicroelectronics

FET RF 65V 945MHZ M243

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: M243
  • Supplier Device Package: M243
패키지: M243
재고6,048
945MHz
15dB
28V
7A
-
100mA
60W
65V
M243
M243
ARF463AG
Microsemi Corporation

RF PWR MOSFET 500V 9A TO-247

  • Transistor Type: N-Channel
  • Frequency: 81.36MHz
  • Gain: 15dB
  • Voltage - Test: 125V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 100W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,288
81.36MHz
15dB
125V
9A
-
50mA
100W
500V
TO-247-3
TO-247
ARF1500
Microsemi Corporation

MOSFET RF N-CH 500V 60A T1

  • Transistor Type: N-Channel
  • Frequency: 27.12MHz
  • Gain: 19dB
  • Voltage - Test: 125V
  • Current Rating: 60A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 750W
  • Voltage - Rated: 500V
  • Package / Case: T-1
  • Supplier Device Package: T-1
패키지: T-1
재고5,808
27.12MHz
19dB
125V
60A
-
-
750W
500V
T-1
T-1
STAC2943
STMicroelectronics

MOSF RF N CH 130V 40A STAC177B

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 350W
  • Voltage - Rated: 130V
  • Package / Case: STAC177B
  • Supplier Device Package: STAC177B
패키지: STAC177B
재고6,180
30MHz
25dB
50V
40A
-
250mA
350W
130V
STAC177B
STAC177B
MRF151A
M/A-Com Technology Solutions

FET RF N-CH 50V 150W P-244

  • Transistor Type: N-Channel
  • Frequency: 30MHz ~ 175MHz
  • Gain: 13dB ~ 22dB
  • Voltage - Test: 50V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 125V
  • Package / Case: P-244
  • Supplier Device Package: P-244
패키지: P-244
재고4,960
30MHz ~ 175MHz
13dB ~ 22dB
50V
16A
-
250mA
150W
125V
P-244
P-244
SD56120
STMicroelectronics

FET RF 65V 860MHZ M246

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: M246
  • Supplier Device Package: M246
패키지: M246
재고6,448
860MHz
16dB
28V
14A
-
400mA
100W
65V
M246
M246
BLF6G38LS-50,112
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 16.5A
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고6,992
3.4GHz ~ 3.6GHz
14dB
28V
16.5A
-
450mA
9W
65V
SOT-502B
SOT502B
ATF-511P8-BLK
Broadcom Limited

FET RF 7V 2GHZ 8-LPCC

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 14.8dB
  • Voltage - Test: 4.5V
  • Current Rating: 1A
  • Noise Figure: 1.4dB
  • Current - Test: 200mA
  • Power - Output: 30dBm
  • Voltage - Rated: 7V
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-LPCC (2x2)
패키지: 8-WFDFN Exposed Pad
재고21,012
2GHz
14.8dB
4.5V
1A
1.4dB
200mA
30dBm
7V
8-WFDFN Exposed Pad
8-LPCC (2x2)
CGHV1J025D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120mA
  • Power - Output: 25W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,216
18GHz
17dB
40V
-
-
120mA
25W
100V
Die
Die
AFM912NT1
NXP

RF MOSFET LDMOS 16DFN

  • Transistor Type: LDMOS
  • Frequency: 136MHz ~ 941MHz
  • Gain: 13.3dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
패키지: -
Request a Quote
136MHz ~ 941MHz
13.3dB
-
10µA
-
-
-
30 V
16-VDFN Exposed Pad
16-DFN (4x6)
BLP15M9S30XY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 19.3dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 30W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
Request a Quote
2GHz
19.3dB
32 V
1.4µA
-
200 mA
30W
65 V
TO-270AA
TO-270-2F-1
A5G38H045NT4
NXP

RF MOSFET DFN

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-