페이지 89 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  89/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA260851F V1
Infineon Technologies

IC FET RF LDMOS 85W H-31248-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-31248-2
패키지: 2-Flatpack, Fin Leads
재고7,360
2.68GHz
14dB
28V
10µA
-
900mA
85W
65V
2-Flatpack, Fin Leads
H-31248-2
PTFA212001FV4XWSA1
Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고6,768
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
BF1005SE6327HTSA1
Infineon Technologies

MOSFET N-CH 8V 25MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 22dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.6dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고2,928
800MHz
22dB
5V
25mA
1.6dB
-
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
MRF8P18265HSR5
NXP

FET RF 2CH 65V 1.88GHZ NI1230S8

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110B
  • Supplier Device Package: NI1230S-8
패키지: SOT-1110B
재고3,040
1.88GHz
16dB
30V
-
-
800mA
72W
65V
SOT-1110B
NI1230S-8
BLF6G27-45,135
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 7W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
패키지: SOT-608A
재고2,448
2.7GHz
18dB
28V
20A
-
350mA
7W
65V
SOT-608A
CDFM2
MRF9085LR3
NXP

FET RF 65V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.9dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 90W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,472
880MHz
17.9dB
26V
-
-
700mA
90W
65V
NI-780
NI-780
MRF6S27085HSR3
NXP

FET RF 68V 2.66GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.66GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,680
2.66GHz
15.5dB
28V
-
-
900mA
20W
68V
NI-780S
NI-780S
MRF6P24190HR5
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,296
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
NE3512S02-A
CEL

HJ-FET NCH 13.5DB S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.35dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
패키지: 4-SMD, Flat Leads
재고7,456
12GHz
13.5dB
2V
70mA
0.35dB
10mA
-
4V
4-SMD, Flat Leads
S02
hot SD2904
STMicroelectronics

TRANS RF N-CH HF/VHF/UHF M113

  • Transistor Type: N-Channel
  • Frequency: 400MHz
  • Gain: 11.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: M113
  • Supplier Device Package: M113
패키지: M113
재고4,832
400MHz
11.5dB
28V
5A
-
50mA
30W
65V
M113
M113
hot J310G
ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고6,224
100MHz
16dB
10V
60mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PTVA120501EAV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,024
-
-
-
-
-
-
-
-
-
-
MRFE6VP100HSR5
NXP

FET RF 2CH 133V 512MHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 133V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고4,928
512MHz
26dB
50V
-
-
100mA
100W
133V
NI-780S-4
NI-780S-4
hot MRF8P23080HSR3
NXP

FET RF 2CH 65V 2.3GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 14.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고4,960
2.3GHz
14.6dB
28V
-
-
280mA
16W
65V
NI-780S-4
NI-780S-4
AFT20P140-4WGNR3
NXP

FET RF 2CH 65V 1.91GHZ OM780-4GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz ~ 1.91GHz
  • Gain: 17.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고4,256
1.88GHz ~ 1.91GHz
17.8dB
28V
-
-
500mA
24W
65V
OM-780G-4L
OM-780G-4L
MMRF1018NBR1
NXP

FET RF 120V 860MHZ

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 120V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272-4
패키지: TO-272-4
재고6,480
860MHz
22dB
50V
-
-
350mA
18W
120V
TO-272-4
TO-272-4
BLM8G0710S-45ABGY
Ampleon USA Inc.

RF FET LDMOS 65V 35DB SOT12122

  • Transistor Type: LDMOS (Dual)
  • Frequency: 957.5MHz
  • Gain: 35dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOP
패키지: SOT-1211-2
재고2,768
957.5MHz
35dB
28V
-
-
30mA
3W
65V
SOT-1211-2
16-HSOP
BLP10H605Z
Ampleon USA Inc.

RF FET LDMOS 104V 22DB 12VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 22.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 5W
  • Voltage - Rated: 104V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고5,552
860MHz
22.4dB
50V
-
-
30mA
5W
104V
12-VDFN Exposed Pad
12-HVSON (5x6)
BLM8G0710S-45ABY
Ampleon USA Inc.

RF FET LDMOS 65V 35DB SOT12112

  • Transistor Type: LDMOS (Dual)
  • Frequency: 957.5MHz
  • Gain: 35dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOPF
패키지: SOT-1211-2
재고3,472
957.5MHz
35dB
28V
-
-
30mA
3W
65V
SOT-1211-2
16-HSOPF
BLC8G24LS-241AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT12521

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
패키지: SOT-1252-1
재고6,216
2.3GHz ~ 2.4GHz
14.5dB
28V
-
-
500mA
56W
65V
SOT-1252-1
SOT1252-1
CGHV96050F2
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 10dB
  • Voltage - Test: 40V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 70W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
패키지: 440210
재고5,840
7.9GHz ~ 9.6GHz
10dB
40V
6A
-
500mA
70W
100V
440210
440210
CLF1G0060-10U
Ampleon USA Inc.

RF FET HEMT 150V 14.5DB SOT1227A

  • Transistor Type: HEMT
  • Frequency: 3GHz ~ 3.5GHz
  • Gain: 14.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 10W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1227A
  • Supplier Device Package: SOT-1227A
패키지: SOT-1227A
재고6,352
3GHz ~ 3.5GHz
14.5dB
50V
-
-
50mA
10W
150V
SOT-1227A
SOT-1227A
ST36015
STMicroelectronics

RF MOSFET LDMOS E2

  • Transistor Type: LDMOS
  • Frequency: 3.6GHz ~ 700MHz
  • Gain: 12.4dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: -
Request a Quote
3.6GHz ~ 700MHz
12.4dB
-
1µA
-
-
20W
65 V
E2
E2
BLC9G27XS-380AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-7

  • Transistor Type: LDMOS
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 15.5dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 380W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: SOT-1258-7
패키지: -
재고9
2.496GHz ~ 2.69GHz
15.5dB
30 V
2.8µA
-
600 mA
380W
65 V
SOT-1258-7
SOT-1258-7
BLP15H9S30XY
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 140 mA
  • Power - Output: 30W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
패키지: -
Request a Quote
2GHz
22dB
50 V
1.4µA
-
140 mA
30W
106 V
SOT-1482-1
SOT-1482-1
A2T18H455W23NR6
NXP Semiconductors

RF MOSFET LDMOS 31.5V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 14.5dB @ 1.805GHz
  • Voltage - Test: 31.5 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.08 A
  • Power - Output: 87W
  • Voltage - Rated: 65 V
  • Package / Case: OM-1230-4L2S
  • Supplier Device Package: OM-1230-4L2S
패키지: -
Request a Quote
1.805GHz ~ 1.88GHz
14.5dB @ 1.805GHz
31.5 V
10µA
-
1.08 A
87W
65 V
OM-1230-4L2S
OM-1230-4L2S
MMRF5018HSR5
NXP

RF MOSFET GAN NI400

  • Transistor Type: GaN
  • Frequency: 1MHz ~ 2.7GHz
  • Gain: 17.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 125W
  • Voltage - Rated: 125 V
  • Package / Case: NI-400S-2SA
  • Supplier Device Package: NI-400S-2SA
패키지: -
Request a Quote
1MHz ~ 2.7GHz
17.3dB
-
-
-
-
125W
125 V
NI-400S-2SA
NI-400S-2SA
ART1K6FHGJ
Ampleon USA Inc.

RF MOSFET LDMOS 65V SOT539AN

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 425MHz
  • Gain: 28dB
  • Voltage - Test: 65 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 1600W
  • Voltage - Rated: 177 V
  • Package / Case: SOT-539AN
  • Supplier Device Package: SOT539AN
패키지: -
재고222
1MHz ~ 425MHz
28dB
65 V
-
-
600 mA
1600W
177 V
SOT-539AN
SOT539AN