페이지 107 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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hot TK5P50D(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고48,000
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 5.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
패키지: 8-SOIC (0.173", 4.40mm Width)
재고4,912
2SC5201,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,560
RN2310,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고59,880
RN2901(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고5,520
CLH05,LMBJQ(O
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: L-FLAT?
재고2,832
TA58L05F(TE16L1,NQ
Toshiba Semiconductor and Storage

IC REG LINEAR 5V 250MA PW-MOLD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 29V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.4V @ 200mA
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1mA ~ 50mA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,872
TCR2LF36,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 3.6V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 2µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고4,176
TB67H400AHG
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel, PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 6A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 47 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 25-SIP, Formed Leads
  • Supplier Device Package: 25-HZIP
패키지: 25-SIP, Formed Leads
재고22,992
TC74VCX257FTEL
Toshiba Semiconductor and Storage

IC MULTIPLEXER 1 X 2:4 16TSSOP

  • Type: Multiplexer
  • Circuit: 1 x 2:4
  • Independent Circuits: 4
  • Current - Output High, Low: 24mA, 24mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고22,332
TC74LVX374FTEL
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 95MHz
  • Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고6,976
TC7SH125FSTPL3
Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST FSV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-953
  • Supplier Device Package: fSV
패키지: SOT-953
재고4,272
TC74ACT244PF
Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20DIP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 20-DIP (0.300", 7.62mm)
  • Supplier Device Package: 20-DIP
패키지: 20-DIP (0.300", 7.62mm)
재고35,034
DF2S5.1SC(TPL3)
Toshiba Semiconductor and Storage

TVS DIODE SC2

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 1.5V
  • Voltage - Breakdown (Min): 4.85V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 25pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SC2
패키지: 2-SMD, Flat Lead
재고8,352
TLP512(F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 6-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 15% @ 16mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 15V
  • Current - Output / Channel: 8mA
  • Voltage - Forward (Vf) (Typ): 1.65V
  • Current - DC Forward (If) (Max): 25mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
패키지: 6-DIP (0.300", 7.62mm)
재고3,078
TLP3924(TP15,F)
Toshiba Semiconductor and Storage

OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP

  • Number of Channels: 1
  • Voltage - Isolation: 1500Vrms
  • Current Transfer Ratio (Min): -
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): -
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Photovoltaic
  • Voltage - Output (Max): 30V
  • Current - Output / Channel: 4µA
  • Voltage - Forward (Vf) (Typ): 1.3V
  • Current - DC Forward (If) (Max): 30mA
  • Vce Saturation (Max): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-SSOP
패키지: 4-SMD, Flat Leads
재고5,724
TLP291(GR,E)
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 300% @ 5mA
  • Turn On / Turn Off Time (Typ): 7µs, 7µs
  • Rise / Fall Time (Typ): 4µs, 7µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
패키지: 4-SOIC (0.179", 4.55mm)
재고6,912
hot 74VHCT04AFT
Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14TSSOPB

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOPB
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고19,968
TCR15AG30,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 1.5A 6WCSP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.648V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): 40µA
  • Current - Supply (Max): -
  • PSRR: 95dB ~ 60dB (1kHz)
  • Control Features: Enable
  • Protection Features: Current Limit, Thermal Shutdown, UVLO
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSP (1.2x0.80)
패키지: 6-XFBGA, WLCSP
재고103,878
GT20N135SRA-S1E
Toshiba Semiconductor and Storage

IGBT 1350V 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 312 W
  • Switching Energy: -, 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 185 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 40A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고30
RN1107-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고18,000
TCR3DM10-LF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.75V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
패키지: -
재고30,000
SSM6N39TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 1.6A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
패키지: -
Request a Quote
SSM10N961L-ELF
Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 880mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFLGA, CSP
  • Supplier Device Package: TCSPAG-341501
패키지: -
재고28,470
RN2109MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
패키지: -
재고23,850
TCK422G-L3F
Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 2.7V ~ 28V
  • Logic Voltage - VIL, VIH: 0.4V, 1.2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSPG (0.8x1.2)
패키지: -
재고25,983
RN4985FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고23,910
XK1R9F10QB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고14,562