Toshiba Semiconductor and Storage 제품

TPCA8011-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 40A SOP-8 ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

TPH2R306NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 60A SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

2SC2235-Y(6MBH1,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

RN1317(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

패키지: SC-70, SOT-323

RN4990FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: SOT-563, SOT-666

TA78L005AP(TORI,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

TA78DS05BP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

TA78DS05AF(TE12L,F

Toshiba Semiconductor and Storage

IC REG LINEAR 5V 30MA PW-MINI

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 10mA
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1mA
• PSRR: -
• Control Features: -
• Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI (SOT-89)

패키지: TO-243AA

TC7MBL3125CFT(EL)

Toshiba Semiconductor and Storage

IC MUX/DEMUX QUAD 14TSSOP

• Type: Bus Switch
• Circuit: 4 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

패키지: 14-TSSOP (0.173", 4.40mm Width)

74VHCT574AFT(BE)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 140MHz
• Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

패키지: 20-TSSOP (0.173", 4.40mm Width)

TC75W55FK(TE85L,F)

Toshiba Semiconductor and Storage

IC OP AMP GP 160KHZ US8

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 0.08 V/µs
• Gain Bandwidth Product: 160kHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 2mV
• Current - Supply: 20µA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

패키지: 8-VFSOP (0.091", 2.30mm Width)

TMP91FY42FG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 16BIT 256KB FLASH 100LQFP

• Core Processor: 900/L1
• Core Size: 16-Bit
• Speed: 27MHz
• Connectivity: EBI/EMI, I2C, IrDA, UART/USART
• Peripherals: DMA, PWM, WDT
• Number of I/O: 81
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

패키지: 100-LQFP

TLP130(GB-TPR,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-MFSOP

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

패키지: 6-SOIC (0.173", 4.40mm Width) 5 Leads

TLP705A(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 35ns, 15ns
• Current - Output High, Low: 400mA, 400mA
• Current - Peak Output: 600mA
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing
• Approvals: cUL, UL

패키지: 6-SOIC (0.268", 6.80mm Width)

74VHCV245FT

Toshiba Semiconductor and Storage

IC TXRX NON-INVERT 5.5V 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: Schmitt Trigger
• Output Type: 3-State
• Current - Output High, Low: 16mA, 16mA
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

TCR3UG08A,LF

Toshiba Semiconductor and Storage

IC REG LIN 0.8V 300MA 4WCSP-F

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.257V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 580nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Thermal Shutdown
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP-F (0.65x0.65)

패키지: 4-XFBGA, WLCSP

74VHC139FT

Toshiba Semiconductor and Storage

IC DECODER 2-4 LINE DUAL 16TSSOP

• Type: Decoder/Demultiplexer
• Circuit: 1 x 2:4
• Independent Circuits: 2
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

74VHC9273FT

Toshiba Semiconductor and Storage

X34 PB-F D-TYPE FLIP-FLOP FLIP-F

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 100MHz
• Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

패키지: 20-TSSOP (0.173", 4.40mm Width)

TCR3DG35,LF

Toshiba Semiconductor and Storage

300MA LDO VOUT=3.5V DROPOUT=195M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.215V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

패키지: 4-XFBGA, CSPBGA

TB67S209FTG-EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC, 50V/4.0

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: NMOS, PMOS
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75V ~ 5.25V
• Voltage - Load: 10V ~ 47V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

패키지: -

XPH2R106NC-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 110A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: -

TCR3RM12A-LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.2V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.13V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 100dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

패키지: -

CRZ24-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 24V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±10%
• Power - Max: 700 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 17 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

패키지: -

CUHS15F30-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: US2H
• Operating Temperature - Junction: 150°C

패키지: -

TC74LCX00FT-EL

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2V ~ 3.6V
• Current - Quiescent (Max): 10 µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: -

Request a Quote

TC7WH157FU-TE12L

Toshiba Semiconductor and Storage

IC MULTIPLEXER DIGITAL SM8

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-SSOP

패키지: -

Request a Quote

TMPM3HMFDAFG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
• Number of I/O: 73
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 12x12b SAR; D/A 2x8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

패키지: -

Request a Quote

HN1A01FU-GR-LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A US6-PLN

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

패키지: -

Request a Quote