Toshiba Semiconductor and Storage 제품

TK16A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 790µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

TK17E65W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 165W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

패키지: TO-220-3

TPCC8008(TE12L,QM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 25A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1A
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 12.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON
• Package / Case: 8-VDFN Exposed Pad

패키지: 8-VDFN Exposed Pad

TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 22A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON
• Package / Case: 8-VDFN Exposed Pad

패키지: 8-VDFN Exposed Pad

TK14N65W5,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 690µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

패키지: TO-247-3

SSM6J801R,LF

Toshiba Semiconductor and Storage

SMALL-SIGNAL PCH MOSFET UMOSVI

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
• Vgs (Max): +6V, -8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

패키지: -

2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH SOT23

• Transistor Type: N-Channel JFET
• Frequency: 1kHz
• Gain: -
• Voltage - Test: 10V
• Current Rating: -
• Noise Figure: 1dB
• Current - Test: 500µA
• Power - Output: -
• Voltage - Rated: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

RN2108ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

패키지: SC-101, SOT-883

RN2902FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: SOT-563, SOT-666

RN4902,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

TCR4DG35,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.5V 420MA WCSP4E

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.26V @ 420mA
• Current - Output: 420mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TC74HC4538AF-ELF

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 25NS 16SOP

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: Yes
• Propagation Delay: 25ns
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 16-SOP

패키지: 16-SOIC (0.209", 5.30mm Width)

TC4S71FT5LFT

Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP SMV

• Logic Type: OR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

패키지: SC-74A, SOT-753

TC4S30FT5LFT

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP SMV

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

패키지: SC-74A, SOT-753

74HC374D(BJ)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20SOIC

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 90MHz
• Max Propagation Delay @ V, Max CL: 32ns @ 6V, 150pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

패키지: 20-SOIC (0.295", 7.50mm Width)

TC7PG34AFE(TE85L,F

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERTER ES6

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 0.9 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6 (1.6x1.6)

패키지: SOT-563, SOT-666

TC7WBL3306CFK(5L,F

Toshiba Semiconductor and Storage

IC USB SWITCH SPST DUAL US8

• Applications: -
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 19 Ohm
• Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: 8-SSOP

패키지: 8-VFSOP (0.091", 2.30mm Width)

TLBD1060(T18)

Toshiba Semiconductor and Storage

LED BLUE 2MINI PLCC SMD

• Color: Blue
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 60mcd
• Lens Style/Size: Rectangle with Flat Top
• Voltage - Forward (Vf) (Typ): 3.3V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 470nm
• Wavelength - Peak: 468nm
• Features: -
• Package / Case: 2-Mini PLCC
• Supplier Device Package: 2-MiniPLCC
• Size / Dimension: 2.00mm L x 1.40mm W
• Height (Max): 1.50mm

패키지: 2-Mini PLCC

TLP3120(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY 80V 5MA 6SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 150 mOhm
• Load Current: 1.25A
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 80 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

패키지: 6-SOP (0.173", 4.40mm)

TLP3220(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 5MA 4-SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 14 Ohm
• Load Current: 80mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

패키지: 4-SMD (0.165", 4.20mm)

TCR2EE42,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT4.2V DROPOUT180MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

7UL1T126FU-LF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2.3V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

패키지: -

RN4903-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP + NPN BRT Q1BS

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

패키지: -

TB67H481FTG-O-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVERS, 2-CH, 50V

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM
• Technology: BiCDMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 8.2V ~ 44V
• Voltage - Load: 50V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

패키지: -

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TB62216FTG-8-EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 2.5A
• Voltage - Supply: 40V (Max)
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

패키지: -

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TCR2EN21-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.1V IOUT=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

패키지: -

TCR3RM29A-LF-SE

Toshiba Semiconductor and Storage

LDO REG 2.9V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.15V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 12 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

패키지: -

TPH3R506PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 94A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830mW (Ta), 116W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: -

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