페이지 112 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

기록 4,549
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hot SSM3J14TTE85LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.7A TSM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고35,436
TK6A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고2,128
TK35A08N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 35A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,816
TK14E65W,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,904
TK7S10N1Z,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,736
TPH11003NL,LQ
Toshiba Semiconductor and Storage

MOSFET N CH 30V 32A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고28,476
2SA1588-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 100mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고3,440
2SA1618-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SMV

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,160
hot HN2D01JE(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA ESV

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.6ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: SOT-553
재고32,328
TBD62004APG
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16DIP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
패키지: 16-DIP (0.300", 7.62mm)
재고17,172
TC78H620FNG
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

  • Motor Type - Stepper: Unipolar
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 15 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOP
패키지: 16-LSSOP (0.173", 4.40mm Width)
재고7,712
TB62216FTG,C8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (7x7)
패키지: 48-VFQFN Exposed Pad
재고7,152
TC78H610FNG,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 800mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 15 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOP
패키지: 16-LSSOP (0.173", 4.40mm Width)
재고7,696
TC58BVG0S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
패키지: 63-VFBGA
재고4,048
TC7SZ38F(T5L,JF,T)
Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: Open Drain
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: -, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
패키지: SC-74A, SOT-753
재고3,696
TD62083AFNG,N
Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-SSOP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 8/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 18-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 18-SSOP
패키지: 18-LSSOP (0.173", 4.40mm Width)
재고2,112
TD62003APG,N
Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 7/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 0 V ~ 50 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
패키지: 16-DIP (0.300", 7.62mm)
재고4,352
DF2S16CT,L3F
Toshiba Semiconductor and Storage

TVS DIODE 12VWM

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 12V
  • Voltage - Breakdown (Min): 15.3V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 10pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
패키지: SOD-882
재고77,208
TLP591B(C,F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV PHVOLT 6-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): -
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 200µs, 3ms
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Photovoltaic
  • Voltage - Output (Max): 7V
  • Current - Output / Channel: 24µA
  • Voltage - Forward (Vf) (Typ): 1.4V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
  • Supplier Device Package: 6-DIP, 5 Lead
패키지: 6-DIP (0.300", 7.62mm), 5 Leads
재고17,160
TBD62785APG
Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고16,350
TC78B042FTG,EL
Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Speed
  • Output Configuration: High Side, Low Side
  • Interface: PWM
  • Technology: -
  • Step Resolution: -
  • Applications: Fan Controller
  • Current - Output: 2mA
  • Voltage - Supply: 6V ~ 16.5V
  • Voltage - Load: 4.5V ~ 5.3V
  • Operating Temperature: -40°C ~ 115°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5x5)
패키지: 32-VFQFN Exposed Pad
재고30,276
TMPM3HLFDAUG
Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: I2C, SPI, UART/USART
  • Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
  • Number of I/O: 57
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 32K x 8
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 12x12b SAR; D/A 2x8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
패키지: -
재고4,800
SSM6J503NU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
패키지: -
Request a Quote
RN4989FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=47KO

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고24,000
RN1710JE-TE85L-F
Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: -
재고315
TPCA8045-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 46A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
TC62D748CFNAG-ELHB
Toshiba Semiconductor and Storage

IC

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): No
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 17V
  • Current - Output / Channel: 90mA
  • Frequency: -
  • Dimming: No
  • Applications: LED Lighting
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SSOP (0.154", 3.90mm Width)
  • Supplier Device Package: 24-SSOP
패키지: -
Request a Quote
RN4901FE-LF-CT
Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR4.7KOHM Q1BER

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고990