페이지 3 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
C3M0075120J	Cree/Wolfspeed	1200V, 75 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고2,576
C2M0040120D	Cree/Wolfspeed	MOSFET N-CH 1200V 60A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고4,448
C3M0280090D	Cree/Wolfspeed	MOSFET N-CH 900V 11.5A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고18,216
CGHV27015S	Cree/Wolfspeed	RF MOSFET HEMT 50V 12VFDFN Transistor Type: HEMT Frequency: 6GHz Gain: 21dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 60mA Power - Output: 15W Voltage - Rated: 125V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	패키지: 12-VFDFN Exposed Pad	재고6,288
CGHV22100F	Cree/Wolfspeed	FET RF 125V 2.2GHZ 440162 Transistor Type: HEMT Frequency: 1.8GHz ~ 2.2GHz Gain: 20dB Voltage - Test: 50V Current Rating: 6A Noise Figure: - Current - Test: 500mA Power - Output: 100W Voltage - Rated: 125V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고4,848
CGHV1F025S	Cree/Wolfspeed	FET RF 100V 6GHZ 12DFN Transistor Type: HEMT Frequency: 6GHz Gain: 16dB Voltage - Test: 40V Current Rating: 2A Noise Figure: - Current - Test: 150mA Power - Output: 29W Voltage - Rated: 100V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	패키지: 12-VFDFN Exposed Pad	재고7,312
CGH60030D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 250mA Power - Output: 30W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,088
CGHV59350F	Cree/Wolfspeed	FET RF 125V 5.9GHZ 440217 Transistor Type: HEMT Frequency: 5.2GHz ~ 5.9GHz Gain: 11.2dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 1A Power - Output: 450W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	패키지: 440217	재고4,528
CGHV31500F	Cree/Wolfspeed	FET RF 125V 24A 440217 Transistor Type: HEMT Frequency: 2.7GHz ~ 3.1GHz Gain: 13.5dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 500mA Power - Output: 500W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	패키지: 440217	재고5,904
CGH40090PP	Cree/Wolfspeed	FET RF 84V 4GHZ 440199 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 12.5dB Voltage - Test: 28V Current Rating: 28A Noise Figure: - Current - Test: 1A Power - Output: 100W Voltage - Rated: 84V Package / Case: 440199 Supplier Device Package: 440199	패키지: 440199	재고6,276
CGHV40050F	Cree/Wolfspeed	FET RF 150V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 12.5dB Voltage - Test: 50V Current Rating: 6.3A Noise Figure: - Current - Test: 300mA Power - Output: 50W Voltage - Rated: 150V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고7,920
CGH27060F	Cree/Wolfspeed	RF MOSFET HEMT 28V 440193 Transistor Type: HEMT Frequency: 3GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 300mA Power - Output: 60W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고6,400
CGH55030F1	Cree/Wolfspeed	FET RF 84V 5.8GHZ 440166 Transistor Type: HEMT Frequency: 5.5GHz ~ 5.8GHz Gain: 10dB Voltage - Test: 28V Current Rating: 3A Noise Figure: - Current - Test: 250mA Power - Output: 30W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	패키지: 440166	재고7,776
C4D05120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 19A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 19A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,568
C4D02120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 9A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,688
C3D06060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 294pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고29,184
C3D03060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고8,640
C3D04060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고36,240
C3D02060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고17,256
C3D16065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 39A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 39A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 95µA @ 650V Capacitance @ Vr, F: 878pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고18,828
C2D05120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 17.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 455pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,188
C2D10120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 1000pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고19,740
C3D10065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고16,980
C4D08120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고9,036
C3D08060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 441pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고34,488
CGHV40100P-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40100P Type: FET Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGHV40100 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고3,420
CGHV35150-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV35150F Type: FET Frequency: 2.9GHz ~ 3.5GHz For Use With/Related Products: CGHV35150 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,354
CGH40006P-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40006P Type: HEMT Frequency: 500MHz ~ 6GHz For Use With/Related Products: CGH40006P Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고5,148

C3M0075120J

Cree/Wolfspeed

1200V, 75 MOHM, G3 SIC MOSFET

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고2,576

C2M0040120D

Cree/Wolfspeed

MOSFET N-CH 1200V 60A TO-247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고4,448

C3M0280090D

Cree/Wolfspeed

MOSFET N-CH 900V 11.5A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고18,216

CGHV27015S

Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

Transistor Type: HEMT
Frequency: 6GHz
Gain: 21dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 60mA
Power - Output: 15W
Voltage - Rated: 125V
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x3)

패키지: 12-VFDFN Exposed Pad

재고6,288

CGHV22100F

Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

Transistor Type: HEMT
Frequency: 1.8GHz ~ 2.2GHz
Gain: 20dB
Voltage - Test: 50V
Current Rating: 6A
Noise Figure: -
Current - Test: 500mA
Power - Output: 100W
Voltage - Rated: 125V
Package / Case: 440162
Supplier Device Package: 440162

패키지: 440162

재고4,848

CGHV1F025S

Cree/Wolfspeed

FET RF 100V 6GHZ 12DFN

Transistor Type: HEMT
Frequency: 6GHz
Gain: 16dB
Voltage - Test: 40V
Current Rating: 2A
Noise Figure: -
Current - Test: 150mA
Power - Output: 29W
Voltage - Rated: 100V
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x3)

패키지: 12-VFDFN Exposed Pad

재고7,312

CGH60030D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 250mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,088

CGHV59350F

Cree/Wolfspeed

FET RF 125V 5.9GHZ 440217

Transistor Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
Gain: 11.2dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 1A
Power - Output: 450W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

패키지: 440217

재고4,528

CGHV31500F

Cree/Wolfspeed

FET RF 125V 24A 440217

Transistor Type: HEMT
Frequency: 2.7GHz ~ 3.1GHz
Gain: 13.5dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 500mA
Power - Output: 500W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

패키지: 440217

재고5,904

CGH40090PP

Cree/Wolfspeed

FET RF 84V 4GHZ 440199

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 12.5dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: -
Current - Test: 1A
Power - Output: 100W
Voltage - Rated: 84V
Package / Case: 440199
Supplier Device Package: 440199

패키지: 440199

재고6,276

CGHV40050F

Cree/Wolfspeed

FET RF 150V 4GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 12.5dB
Voltage - Test: 50V
Current Rating: 6.3A
Noise Figure: -
Current - Test: 300mA
Power - Output: 50W
Voltage - Rated: 150V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고7,920

CGH27060F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440193

Transistor Type: HEMT
Frequency: 3GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 300mA
Power - Output: 60W
Voltage - Rated: 84V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고6,400

CGH55030F1

Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

Transistor Type: HEMT
Frequency: 5.5GHz ~ 5.8GHz
Gain: 10dB
Voltage - Test: 28V
Current Rating: 3A
Noise Figure: -
Current - Test: 250mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

패키지: 440166

재고7,776

C4D05120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 19A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 19A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,568

C4D02120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 9A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,688

C3D06060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고29,184

C3D03060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고8,640

C3D04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고36,240

C3D02060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고17,256

C3D16065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 39A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 39A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 95µA @ 650V
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고18,828

C2D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,188

C2D10120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고19,740

C3D10065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고16,980

C4D08120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고9,036

C3D08060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고34,488

CGHV40100P-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100P

Type: FET
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGHV40100
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고3,420

CGHV35150-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV35150F

Type: FET
Frequency: 2.9GHz ~ 3.5GHz
For Use With/Related Products: CGHV35150
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,354

CGH40006P-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40006P

Type: HEMT
Frequency: 500MHz ~ 6GHz
For Use With/Related Products: CGH40006P
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고5,148