페이지 4 - Cree/Wolfspeed 제품 | Heisener Electronics
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Cree/Wolfspeed 제품

기록 243
페이지  4/9
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C3M0120090J-TR
Cree/Wolfspeed

MOSFET N-CH 900V 22A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
재고6,736
C2M0045170D
Cree/Wolfspeed

MOSFET NCH 1.7KV 72A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 18mA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고10,692
C2M0280120D
Cree/Wolfspeed

MOSFET N-CH 1200V 10A TO-247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고24,732
CGHV35060MP
Cree/Wolfspeed

RF MOSFET HEMT 50V 20TSSOP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.5GHz
  • Gain: 14.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 60W
  • Voltage - Rated: 150V
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
재고5,216
CGH27030S
Cree/Wolfspeed

RF MOSFET HEMT 28V 12VFDFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
패키지: 12-VFDFN Exposed Pad
재고3,264
CGH60120D
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,864
CGH40180PP
Cree/Wolfspeed

FET RF 84V 2.5GHZ 440199

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2.5GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 56A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 220W
  • Voltage - Rated: 84V
  • Package / Case: 440199
  • Supplier Device Package: 440199
패키지: 440199
재고6,204
CGH55030F2
Cree/Wolfspeed

FET RF 84V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 4.5GHz ~ 6GHz
  • Gain: 11dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고6,204
CGH40006S
Cree/Wolfspeed

FET RF 84V 6GHZ 6QFN

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-QFN-EP (3x3)
패키지: 6-VDFN Exposed Pad
재고14,580
CSD10030A
Cree/Wolfspeed

DIODE SCHOTTKY 300V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Capacitance @ Vr, F: 660pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고7,632
CPW3-1700-S010B-WP
Cree/Wolfspeed

DIODE SILICON 1.7KV 10A CHIP

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1700V
  • Capacitance @ Vr, F: 880pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: Die
재고3,376
C3D03060F
Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-F2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 155pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220-F2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고15,132
CSD01060E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 80pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,584
C4D08120E
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: 560pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고34,110
C3D10065I
Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: TO-220-2 Isolated Tab
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2 Isolated Tab
재고17,352
C3D02060E
Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고20,388
C5D50065D
Cree/Wolfspeed

DIODE SCHOTTKY 650V 100A TO247-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 100A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 500µA @ 650V
  • Capacitance @ Vr, F: 1970pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-3
재고6,612
C4D20120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 20A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고16,320
CSD20030D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 300V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고2,304
CGHV27100-TB
Cree/Wolfspeed

EVAL BOARD FOR CGHV27100

  • Type: HEMT
  • Frequency: 2.5GHz ~ 2.7GHz
  • For Use With/Related Products: CGHV27100
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,298
CMPA5585030F-TB
Cree/Wolfspeed

TEST BOARD

  • Type: -
  • Frequency: -
  • For Use With/Related Products: -
  • Supplied Contents: -
패키지: -
재고3,222
CGHV14800F-TB
Cree/Wolfspeed

EVAL BOARD FOR CGHV14800

  • Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • For Use With/Related Products: CGHV14800
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고6,390
CGHV31500F-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV31500F

  • Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • For Use With/Related Products: CGHV31500F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,356
CGHV96050F2-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV96050F2

  • Type: FET
  • Frequency: 8.4GHz ~ 9.6GHz
  • For Use With/Related Products: CGHV96050
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,388
hot CMPA0060002F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRC CMPA0060002

  • Type: Amplifier
  • Frequency: 6GHz
  • For Use With/Related Products: CMPA0060002F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고3,942
CGH40010F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40010

  • Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • For Use With/Related Products: CGH40010F/ CGH40010P
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,640
CMPA5585030F
Cree/Wolfspeed

IC

  • Frequency: 5.5GHz ~ 8.5GHz
  • P1dB: -
  • Gain: 26dB
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: 28V
  • Current - Supply: -
  • Test Frequency: -
  • Package / Case: 440213
  • Supplier Device Package: 440213
패키지: 440213
재고2,466
hot CMPA5585025F
Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

  • Frequency: 5.5GHz ~ 8.5GHz
  • P1dB: -
  • Gain: 22dB
  • Noise Figure: -
  • RF Type: General Purpose
  • Voltage - Supply: -
  • Current - Supply: -
  • Test Frequency: 8.4GHz
  • Package / Case: 440208
  • Supplier Device Package: 440208
패키지: 440208
재고4,950