Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIZF928DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 33A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고18,192	-	30V	33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)	2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V	2V @ 250µA	-	-	3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SI1902DL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.66A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고8,892	-	20V	660mA (Ta)	385mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	-	270mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJQ910EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 100V 70A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	재고5,970	-	100V	70A (Tc)	8.6mOhm @ 10A, 10V	2.5V @ 250µA	58nC @ 10V	2832pF @ 50V	187W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SIZF300DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고8,478	-	30V	23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)	4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V	2.2V @ 250µA	22nC @ 10V, 62nC @ 10V	1100pF @ 15V, 3150pF @ 15V	3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQ4937EY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고1,005	-	30V	5A (Tc)	75mOhm @ 3.9A, 10V	2.5V @ 250µA	15nC @ 10V	480pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJQ980EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 80V 36A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	재고12,000	-	80V	36A (Tc)	13.5mOhm @ 5A, 10V	2.5V @ 250µA	36nC @ 10V	1995pF @ 40V	187W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SI6562DQ-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 8-TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	Logic Level Gate	20V	-	30mOhm @ 4.5A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SQS966ENW-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PWRPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	패키지: -	재고26,310	-	60V	6A (Tc)	36mOhm @ 1.25A, 10V	2.5V @ 250µA	8.8nC @ 10V	572pF @ 25V	27.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual
SIZ350DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 18.5A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고22,497	-	30V	18.5A (Ta), 30A (Tc)	6.75mOhm @ 15A, 10V	2.4V @ 250µA	20.3nC @ 10V	940pF @ 15V	3.7W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQJ912AEP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	40V	30A (Tc)	9.3mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZ340BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16.9A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고18,267	-	30V	16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)	8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V	2.4V @ 250µA	12.6nC @ 10V, 23.5nC @ 10V	550pF @ 15V, 1065pF @ 15V	3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SISF04DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD	패키지: -	재고18,000	-	30V	30A (Ta), 108A (Tc)	4mOhm @ 7A, 10V	2.3V @ 250µA	60nC @ 10V	2600pF @ 15V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD	PowerPAK® 1212-8SCD
SQJ912AEP-T2_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	40V	30A (Tc)	9.3mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI7501DN-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 5.4A 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	Request a Quote	Logic Level Gate	30V	5.4A, 4.5A	35mOhm @ 7.7A, 10V	3V @ 250µA	14nC @ 10V	-	1.6W	-	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SQJ570EP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 100V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	100V	15A (Tc), 9.5A (Tc)	45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V	2.5V @ 250µA	15nC @ 10V, 20nC @ 10V	600pF @ 25V, 650pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI1553CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 20V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	20V	700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)	390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V	1.5V @ 250µA	1.8nC @ 10V, 3nC @ 10V	38pF @ 10V, 43pF @ 10V	290mW (Ta), 340mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJQ936EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 100A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	Request a Quote	-	40V	100A (Tc)	2.3mOhm @ 5A, 10V	2.5V @ 250µA	45nC @ 10V	7300pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SQJB60EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고4,290	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SIZ342ADT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 15.7A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고36,255	-	30V	15.7A (Ta), 33.4A (Tc)	9.4mOhm @ 10A, 10V	2.4V @ 250µA	12.2nC @ 10V	580pF @ 15V	3.7W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQJB02ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고25,422	-	40V	30A (Tc)	7.5mOhm @ 6A, 10V	2.2V @ 250µA	32nC @ 10V	1700pF @ 20V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQ3989EV-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 2.5A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.67W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	재고27,000	-	30V	2.5A (Tc)	155mOhm @ 400mA, 10V	1.5V @ 250µA	11.1nC @ 10V	-	1.67W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI1922EDH-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	20V	1.3A (Ta), 1.3A (Tc)	198mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SIZF4800LDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 80V 10A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V Power - Max: 4.5W (Ta), 56.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerPair™ Supplier Device Package: PowerPAIR® 3x3FS	패키지: -	재고17,940	-	80V	10A (Ta), 36A (Tc)	19mOhm @ 10A, 10V	2V @ 250µA	23nC @ 10V	950pF @ 40V	4.5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerPair™	PowerPAIR® 3x3FS
SQJ992EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	60V	15A (Tc)	56.2mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI4953ADY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	30V	3.7A	53mOhm @ 4.9A, 10V	1V @ 250µA (Min)	25nC @ 10V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIZ988DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 40A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Power - Max: 20.2W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair®	패키지: -	재고30,669	-	30V	40A (Tc), 60A (Tc)	7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V	2.4V @ 250µA, 2.2V @ 250µA	10.5nC @ 4.5V, 23.1nC @ 4.5V	1000pF @ 15V, 2425pF @ 15V	20.2W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair®
SQJ244EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고3	-	40V	20A (Tc), 60A (Tc)	11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V	2.5V @ 250µA	20nC @ 10V, 45nC @ 10V	1200pF @ 25V, 2800pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SI6913DQ-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.9A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	재고27,000	-	12V	4.9A (Ta)	21mOhm @ 5.8A, 4.5V	900mV @ 400µA	28nC @ 4.5V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

SIZF928DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 33A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고18,192

-

30V

33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)

2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V

2V @ 250µA

-

3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SI1902DL-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고8,892

-

20V

660mA (Ta)

385mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

-

270mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJQ910EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 100V 70A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

패키지: -

재고5,970

-

100V

70A (Tc)

8.6mOhm @ 10A, 10V

2.5V @ 250µA

58nC @ 10V

2832pF @ 50V

187W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SIZF300DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고8,478

-

30V

23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)

4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V

2.2V @ 250µA

22nC @ 10V, 62nC @ 10V

1100pF @ 15V, 3150pF @ 15V

3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQ4937EY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고1,005

-

30V

5A (Tc)

75mOhm @ 3.9A, 10V

2.5V @ 250µA

15nC @ 10V

480pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJQ980EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 80V 36A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

패키지: -

재고12,000

-

80V

36A (Tc)

13.5mOhm @ 5A, 10V

2.5V @ 250µA

36nC @ 10V

1995pF @ 40V

187W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SI6562DQ-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

Logic Level Gate

20V

-

30mOhm @ 4.5A, 4.5V

600mV @ 250µA (Min)

25nC @ 4.5V

-

1W

-

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SQS966ENW-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PWRPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Power - Max: 27.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8W Dual
Supplier Device Package: PowerPAK® 1212-8W Dual

패키지: -

재고26,310

-

60V

6A (Tc)

36mOhm @ 1.25A, 10V

2.5V @ 250µA

8.8nC @ 10V

572pF @ 25V

27.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerPAK® 1212-8W Dual

SIZ350DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 18.5A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고22,497

-

30V

18.5A (Ta), 30A (Tc)

6.75mOhm @ 15A, 10V

2.4V @ 250µA

20.3nC @ 10V

940pF @ 15V

3.7W (Ta), 16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SQJ912AEP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

-

40V

30A (Tc)

9.3mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZ340BDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16.9A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고18,267

-

30V

16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)

8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V

2.4V @ 250µA

12.6nC @ 10V, 23.5nC @ 10V

550pF @ 15V, 1065pF @ 15V

3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SISF04DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD

패키지: -

재고18,000

-

30V

30A (Ta), 108A (Tc)

4mOhm @ 7A, 10V

2.3V @ 250µA

60nC @ 10V

2600pF @ 15V

5.2W (Ta), 69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD

SQJ912AEP-T2_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

-

40V

30A (Tc)

9.3mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI7501DN-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

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Logic Level Gate

30V

5.4A, 4.5A

35mOhm @ 7.7A, 10V

3V @ 250µA

14nC @ 10V

-

1.6W

-

Surface Mount

PowerPAK® 1212-8 Dual

SQJ570EP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 100V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

100V

15A (Tc), 9.5A (Tc)

45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V

2.5V @ 250µA

15nC @ 10V, 20nC @ 10V

600pF @ 25V, 650pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI1553CDL-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 20V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

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-

20V

700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V

1.5V @ 250µA

1.8nC @ 10V, 3nC @ 10V

38pF @ 10V, 43pF @ 10V

290mW (Ta), 340mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJQ936EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

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-

40V

100A (Tc)

2.3mOhm @ 5A, 10V

2.5V @ 250µA

45nC @ 10V

7300pF @ 25V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SQJB60EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고4,290

-

60V

30A (Tc)

12mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SIZ342ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고36,255

-

30V

15.7A (Ta), 33.4A (Tc)

9.4mOhm @ 10A, 10V

2.4V @ 250µA

12.2nC @ 10V

580pF @ 15V

3.7W (Ta), 16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SQJB02ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고25,422

-

40V

30A (Tc)

7.5mOhm @ 6A, 10V

2.2V @ 250µA

32nC @ 10V

1700pF @ 20V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQ3989EV-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.67W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

재고27,000

-

30V

2.5A (Tc)

155mOhm @ 400mA, 10V

1.5V @ 250µA

11.1nC @ 10V

-

1.67W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI1922EDH-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

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-

20V

1.3A (Ta), 1.3A (Tc)

198mOhm @ 1A, 4.5V

1V @ 250µA

2.5nC @ 8V

-

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SIZF4800LDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 80V 10A PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Power - Max: 4.5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerPair™
Supplier Device Package: PowerPAIR® 3x3FS

패키지: -

재고17,940

-

80V

10A (Ta), 36A (Tc)

19mOhm @ 10A, 10V

2V @ 250µA

23nC @ 10V

950pF @ 40V

4.5W (Ta), 56.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerPair™

PowerPAIR® 3x3FS

SQJ992EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

60V

15A (Tc)

56.2mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI4953ADY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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Logic Level Gate

30V

3.7A

53mOhm @ 4.9A, 10V

1V @ 250µA (Min)

25nC @ 10V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIZ988DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 40A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair®

패키지: -

재고30,669

-

30V

40A (Tc), 60A (Tc)

7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V

2.4V @ 250µA, 2.2V @ 250µA

10.5nC @ 4.5V, 23.1nC @ 4.5V

1000pF @ 15V, 2425pF @ 15V

20.2W, 40W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair®

SQJ244EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고3

-

40V

20A (Tc), 60A (Tc)

11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V

2.5V @ 250µA

20nC @ 10V, 45nC @ 10V

1200pF @ 25V, 2800pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SI6913DQ-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

재고27,000

-

12V

4.9A (Ta)

21mOhm @ 5.8A, 4.5V

900mV @ 400µA

28nC @ 4.5V

-

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP