페이지 3 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIZ346DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 17A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Power - Max: 16W, 16.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고11,772	-	30V	17A (Tc), 30A (Tc)	28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V	2.2V @ 250µA, 2.4V @ 250µA	5nC @ 4.5V, 9nC @ 4.5V	325pF @ 15V, 650pF @ 15V	16W, 16.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SIZ254DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 70V 11.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	재고2,700	-	70V	11.7A (Ta), 32.5A (Tc)	16.1mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	795pF @ 35V, 765pF @ 35V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SQ1902AEL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.78A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 780mA (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 430mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	패키지: -	Request a Quote	-	20V	780mA (Tc)	415mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	75pF @ 10V	430mW	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQS944ENW-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6A PWRPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	패키지: -	Request a Quote	-	40V	6A (Tc)	25mOhm @ 1.25A, 10V	2.5V @ 250µA	10nC @ 10V	615pF @ 25V	27.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual
SIA907EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQ4917EY-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고66,990	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIZ200DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 22A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	Request a Quote	-	30V	22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V	2.4V @ 250µA	28nC @ 10V, 30nC @ 10V	1510pF @ 15V, 1600pF @ 15V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SQ3585EV-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 20V 3.57A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.67W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	재고36,216	-	20V	3.57A (Tc), 2.5A (Tc)	77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V	1.5V @ 250µA	2.5nC @ 4.5V, 3.5nC @ 4.5V	-	1.67W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQJ208EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	Request a Quote	-	40V	20A (Tc), 60A (Tc)	9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V	2.3V @ 250µA, 2.4V @ 250µA	33nC @ 10V, 75nC @ 10V	1700pF @ 25V, 3900pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SQ4949EY-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 7.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 3.3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고7,425	-	30V	7.5A (Tc)	35mOhm @ 5.9A, 10V	2.5V @ 250µA	30nC @ 10V	1020pF @ 25V	3.3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQ4946AEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	60V	7A (Tc)	40mOhm @ 4.5A, 10V	2.5V @ 250µA	18nC @ 10V	750pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJ740EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 123A PPAK SO-8L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V Power - Max: 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8L Dual BWL	패키지: -	Request a Quote	-	40V	123A (Tc)	3.4mOhm @ 7A, 10V	3.5V @ 250µA	56nC @ 10V	3143pF @ 25V	93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8L Dual BWL
SQ4949EY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 7.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고138,447	-	30V	7.5A (Tc)	35mOhm @ 5.9A, 10V	2.5V @ 250µA	30nC @ 10V	1020pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQ1912AEEH-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.8A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고23,124	-	20V	800mA (Tc)	280mOhm @ 1.2A, 4.5V	1.5V @ 250µA	1.25nC @ 4.5V	27pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SIZ340ADT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 15.7A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고49,455	-	30V	15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)	9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V	2.4V @ 250µA	12.2nC @ 10V, 27.9nC @ 10V	580pF @ 15V, 1290pF @ 15V	3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SIZ270DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 7.1A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	재고34,020	-	100V	7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)	37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V	2.4V @ 250µA	27nC @ 10V	860pF @ 50V, 845pF @ 50V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SQJ956EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 23A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고27,003	-	60V	23A (Tc)	26.7mOhm @ 5.2A, 10V	2.5V @ 250µA	30nC @ 10V	1395pF @ 30V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJQ960EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 63A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Power - Max: 71W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	재고12,630	-	60V	63A (Tc)	9mOhm @ 10A, 10V	2.5V @ 250µA	24nC @ 10V	1950pF @ 25V	71W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SQ4920EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Power - Max: 4.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고6,447	-	30V	8A (Tc)	14.5mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	1465pF @ 15V	4.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJB40EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	패키지: -	재고27,000	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.5V @ 250µA	35nC @ 10V	1900pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIZ980DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 20A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Power - Max: 20W, 66W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고21,444	-	30V	20A (Tc), 60A (Tc)	6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V	2.2V @ 250µA	8.1nC @ 4.5V, 35nC @ 4.5V	930pF @ 15V, 4600pF @ 15V	20W, 66W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQJ910AEP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	30V	30A (Tc)	7mOhm @ 12A, 10V	2.5V @ 250µA	39nC @ 10V	1869pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI7252ADP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 9.3A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V Power - Max: 3.6W (Ta), 33.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고35,154	-	100V	9.3A (Ta), 28.7A (Tc)	18.6mOhm @ 10A, 10V	4V @ 250µA	26.5nC @ 10V	1266pF @ 50V	3.6W (Ta), 33.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZF918DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고18,000	-	30V	23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)	4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V	2.4V @ 250µA, 2.3V @ 250µA	22nC @ 10V, 56nC @ 10V	1060pF @ 15V, 2650pF @ 15V	3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SIA915DJ-T4-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 1.9W (Ta), 6.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	패키지: -	Request a Quote	-	30V	3.7A (Ta), 4.5A (Tc)	87mOhm @ 2.9A, 10V	2.2V @ 250µA	9nC @ 10V	275pF @ 15V	1.9W (Ta), 6.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQ1922EEH-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.84A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 840mA (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고35,856	-	20V	840mA (Tc)	350mOhm @ 400mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	50pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQ4917CEY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고10,995	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIS590DN-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 100V 2.7A PPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	Request a Quote	-	100V	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V	2.5V @ 250µA	-	265pF 2 50V, 325pF @ 50V	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual

SIZ346DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 17A/30A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고11,772

-

30V

17A (Tc), 30A (Tc)

28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V

2.2V @ 250µA, 2.4V @ 250µA

5nC @ 4.5V, 9nC @ 4.5V

325pF @ 15V, 650pF @ 15V

16W, 16.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SIZ254DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 70V 11.7A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

재고2,700

-

70V

11.7A (Ta), 32.5A (Tc)

16.1mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

795pF @ 35V, 765pF @ 35V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SQ1902AEL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 430mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

패키지: -

Request a Quote

-

20V

780mA (Tc)

415mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

75pF @ 10V

430mW

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQS944ENW-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 6A PWRPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
Power - Max: 27.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8W Dual
Supplier Device Package: PowerPAK® 1212-8W Dual

패키지: -

Request a Quote

-

40V

6A (Tc)

25mOhm @ 1.25A, 10V

2.5V @ 250µA

10nC @ 10V

615pF @ 25V

27.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerPAK® 1212-8W Dual

SIA907EDJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V SMD

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SQ4917EY-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고66,990

-

60V

8A (Tc)

48mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIZ200DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 22A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

Request a Quote

-

30V

22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)

5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V

2.4V @ 250µA

28nC @ 10V, 30nC @ 10V

1510pF @ 15V, 1600pF @ 15V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SQ3585EV-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 20V 3.57A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.67W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

재고36,216

-

20V

3.57A (Tc), 2.5A (Tc)

77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V

1.5V @ 250µA

2.5nC @ 4.5V, 3.5nC @ 4.5V

-

1.67W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SQJ208EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

Request a Quote

-

40V

20A (Tc), 60A (Tc)

9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V

2.3V @ 250µA, 2.4V @ 250µA

33nC @ 10V, 75nC @ 10V

1700pF @ 25V, 3900pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SQ4949EY-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 3.3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고7,425

-

30V

7.5A (Tc)

35mOhm @ 5.9A, 10V

2.5V @ 250µA

30nC @ 10V

1020pF @ 25V

3.3W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQ4946AEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

-

60V

7A (Tc)

40mOhm @ 4.5A, 10V

2.5V @ 250µA

18nC @ 10V

750pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJ740EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 123A PPAK SO-8L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Power - Max: 93W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8L Dual BWL

패키지: -

Request a Quote

-

40V

123A (Tc)

3.4mOhm @ 7A, 10V

3.5V @ 250µA

56nC @ 10V

3143pF @ 25V

93W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8L Dual BWL

SQ4949EY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고138,447

-

30V

7.5A (Tc)

35mOhm @ 5.9A, 10V

2.5V @ 250µA

30nC @ 10V

1020pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQ1912AEEH-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.8A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고23,124

-

20V

800mA (Tc)

280mOhm @ 1.2A, 4.5V

1.5V @ 250µA

1.25nC @ 4.5V

27pF @ 10V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SIZ340ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고49,455

-

30V

15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)

9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V

2.4V @ 250µA

12.2nC @ 10V, 27.9nC @ 10V

580pF @ 15V, 1290pF @ 15V

3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SIZ270DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 7.1A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

재고34,020

-

100V

7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)

37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V

2.4V @ 250µA

27nC @ 10V

860pF @ 50V, 845pF @ 50V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SQJ956EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고27,003

-

60V

23A (Tc)

26.7mOhm @ 5.2A, 10V

2.5V @ 250µA

30nC @ 10V

1395pF @ 30V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJQ960EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 63A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power - Max: 71W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

패키지: -

재고12,630

-

60V

63A (Tc)

9mOhm @ 10A, 10V

2.5V @ 250µA

24nC @ 10V

1950pF @ 25V

71W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SQ4920EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Power - Max: 4.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고6,447

-

30V

8A (Tc)

14.5mOhm @ 6A, 10V

2.5V @ 250µA

30nC @ 10V

1465pF @ 15V

4.4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJB40EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

패키지: -

재고27,000

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.5V @ 250µA

35nC @ 10V

1900pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

SIZ980DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Power - Max: 20W, 66W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고21,444

-

30V

20A (Tc), 60A (Tc)

6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V

2.2V @ 250µA

8.1nC @ 4.5V, 35nC @ 4.5V

930pF @ 15V, 4600pF @ 15V

20W, 66W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQJ910AEP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

-

30V

30A (Tc)

7mOhm @ 12A, 10V

2.5V @ 250µA

39nC @ 10V

1869pF @ 15V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI7252ADP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 9.3A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Power - Max: 3.6W (Ta), 33.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고35,154

-

100V

9.3A (Ta), 28.7A (Tc)

18.6mOhm @ 10A, 10V

4V @ 250µA

26.5nC @ 10V

1266pF @ 50V

3.6W (Ta), 33.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZF918DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V
Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고18,000

-

30V

23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)

4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

2.4V @ 250µA, 2.3V @ 250µA

22nC @ 10V, 56nC @ 10V

1060pF @ 15V, 2650pF @ 15V

3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SIA915DJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 1.9W (Ta), 6.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

패키지: -

Request a Quote

-

30V

3.7A (Ta), 4.5A (Tc)

87mOhm @ 2.9A, 10V

2.2V @ 250µA

9nC @ 10V

275pF @ 15V

1.9W (Ta), 6.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQ1922EEH-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.84A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고35,856

-

20V

840mA (Tc)

350mOhm @ 400mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

50pF @ 10V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQ4917CEY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고10,995

-

60V

8A (Tc)

48mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIS590DN-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

Request a Quote

-

100V

2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)

167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V

2.5V @ 250µA

-

265pF 2 50V, 325pF @ 50V

2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual