페이지 4 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI1926DL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 60V 0.34A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), 370mA (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Power - Max: 300mW (Ta), 510mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고5,400	-	60V	340mA (Ta), 370mA (Tc)	1.4Ohm @ 340mA, 10V	2.5V @ 250µA	1.4nC @ 10V	18.5pF @ 30V	300mW (Ta), 510mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJB60EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIA923EDJ-T4-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	패키지: -	Request a Quote	-	20V	4.5A (Ta), 4.5A (Tc)	54mOhm @ 3.8A, 4.5V	1.4V @ 250µA	25nC @ 8V	-	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQ9945BEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고5,925	-	60V	5.4A (Tc)	64mOhm @ 3.4A, 10V	2.5V @ 250µA	12nC @ 10V	470pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIS932EDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	재고8,529	-	30V	6A (Tc)	22mOhm @ 10A, 4.5V	1.4V @ 250µA	14nC @ 4.5V	1000pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SQ3987EV-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 1.67W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	재고22,176	-	30V	3A (Tc)	133mOhm @ 1.5A, 10V	2.5V @ 250µA	12.2nC @ 10V	570pF @ 15V	1.67W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQJ912DEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고7,065	-	40V	30A (Tc)	7.3mOhm @ 7A, 10V	2.5V @ 250µA	36nC @ 10V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQUN700E-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 200V/40V 16A DIE FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V, 40V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V Power - Max: 50W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	-	200V, 40V	16A (Tc), 30A (Tc)	9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V	3.5V @ 250µA, 2.5V @ 250µA	23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V	1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V	50W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
SQJ952EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 23A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V Power - Max: 25W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	패키지: -	Request a Quote	-	60V	23A (Tc)	20mOhm @ 10.3A, 10V	2.5V @ 250µA	30nC @ 10V	1800pF @ 30V	25W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJB46EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	40V	30A (Tc)	8mOhm @ 8A, 10V	3.3V @ 250µA	32nC @ 10V	1800pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI1902CDL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 1A/1.1A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW (Ta), 420mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	20V	1A (Ta), 1.1A (Tc)	235mOhm @ 1A, 4.5V	1.5V @ 250µA	3nC @ 10V	62pF @ 10V	300mW (Ta), 420mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SIZ998BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고53,151	-	30V	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V	2.2V @ 250µA	18nC @ 10V, 46.7nC @ 10V	790pF @ 15V, 2130pF @ 15V	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SI4500BDY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6.6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	20V	6.6A, 3.8A	20mOhm @ 9.1A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.3W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJ914EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고9,000	-	30V	30A (Tc)	12mOhm @ 4.5A, 10V	2.5V @ 250µA	25nC @ 10V	1110pF @ 15V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ204EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고27,000	-	12V	20A (Tc), 60A (Tc)	8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V	1.5V @ 250µA	20nC @ 10V, 50nC @ 10V	1400pF @ 6V, 3700pF @ 6V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SQJ914EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고37,500	-	30V	30A (Tc)	12mOhm @ 4.5A, 10V	2.5V @ 250µA	25nC @ 10V	1110pF @ 15V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZ320DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 30A/40A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고17,595	-	25V	30A (Tc), 40A (Tc)	8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V	2.4V @ 250µA	8.9nC @ 4.5V, 11.9nC @ 4.5V	660pF @ 12.5V, 1370pF @ 12.5V	16.7W, 31W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQJ992EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고23,757	-	60V	15A (Tc)	56.2mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIS903DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	재고64,770	-	20V	6A (Tc)	20.1mOhm @ 5A, 4.5V	1V @ 250µA	42nC @ 10V	2565pF @ 10V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SI4534DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고30,075	-	60V	6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)	29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V	3V @ 250µA	11nC @ 10V, 22nC @ 10V	420pF @ 30V, 650pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIZF920DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 28A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고6,633	-	30V	28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)	3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V	2.4V @ 250µA, 2.2V @ 250µA	29nC @ 10V, 125nC @ 10V	1300pF @ 15V, 5230pF @ 15V	3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQ1563AEH-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 20V 0.85A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	패키지: -	재고10,518	-	20V	850mA (Tc)	280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V	1.5V @ 250µA	1.25nC @ 4.5V, 1.33nC @ 4.5V	89pF @ 10V, 84pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SI4946CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.2A/6.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power - Max: 2W (Ta), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	60V	5.2A (Ta), 6.1A (Tc)	40.9mOhm @ 5.2A, 10V	3V @ 250µA	10nC @ 10V	350pF @ 30V	2W (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZF914DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 23.5A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	Request a Quote	-	25V	23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)	3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V	2.4V @ 250µA, 2.2V @ 250µA	21nC @ 10V, 98nC @ 10V	1050pF @ 10V, 4670pF @ 10V	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SIZ260DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 80V 8.9A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	재고2,508	-	80V	8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)	24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V	2.4V @ 250µA	27nC @ 10V	820pF @ 40V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SI9634DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고29,919	-	60V	6.2A (Ta), 8A (Tc)	29mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI1965DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	12V	1.14A (Ta), 1.3A (Tc)	390mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SISF06DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 28A PPAK 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD	패키지: -	재고34,188	-	30V	28A (Ta), 101A (Tc)	4.5mOhm @ 7A, 10V	2.3V @ 250µA	45nC @ 10V	2050pF @ 15V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD	PowerPAK® 1212-8SCD

SI1926DL-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.34A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), 370mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Power - Max: 300mW (Ta), 510mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고5,400

-

60V

340mA (Ta), 370mA (Tc)

1.4Ohm @ 340mA, 10V

2.5V @ 250µA

1.4nC @ 10V

18.5pF @ 30V

300mW (Ta), 510mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJB60EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

-

60V

30A (Tc)

12mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIA923EDJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

패키지: -

Request a Quote

-

20V

4.5A (Ta), 4.5A (Tc)

54mOhm @ 3.8A, 4.5V

1.4V @ 250µA

25nC @ 8V

-

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQ9945BEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.4A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고5,925

-

60V

5.4A (Tc)

64mOhm @ 3.4A, 10V

2.5V @ 250µA

12nC @ 10V

470pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIS932EDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

재고8,529

-

30V

6A (Tc)

22mOhm @ 10A, 4.5V

1.4V @ 250µA

14nC @ 4.5V

1000pF @ 15V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

SQ3987EV-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power - Max: 1.67W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

재고22,176

-

30V

3A (Tc)

133mOhm @ 1.5A, 10V

2.5V @ 250µA

12.2nC @ 10V

570pF @ 15V

1.67W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SQJ912DEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고7,065

-

40V

30A (Tc)

7.3mOhm @ 7A, 10V

2.5V @ 250µA

36nC @ 10V

-

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQUN700E-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 200V/40V 16A DIE

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 200V, 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Power - Max: 50W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

-

200V, 40V

16A (Tc), 30A (Tc)

9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V

3.5V @ 250µA, 2.5V @ 250µA

23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V

1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V

50W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

Die

SQJ952EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
Power - Max: 25W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

패키지: -

Request a Quote

-

60V

23A (Tc)

20mOhm @ 10.3A, 10V

2.5V @ 250µA

30nC @ 10V

1800pF @ 30V

25W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

SQJB46EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

-

40V

30A (Tc)

8mOhm @ 8A, 10V

3.3V @ 250µA

32nC @ 10V

1800pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI1902CDL-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 1A/1.1A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 300mW (Ta), 420mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

Request a Quote

-

20V

1A (Ta), 1.1A (Tc)

235mOhm @ 1A, 4.5V

1.5V @ 250µA

3nC @ 10V

62pF @ 10V

300mW (Ta), 420mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SIZ998BDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고53,151

-

30V

23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)

4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V

2.2V @ 250µA

18nC @ 10V, 46.7nC @ 10V

790pF @ 15V, 2130pF @ 15V

3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SI4500BDY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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Logic Level Gate

20V

6.6A, 3.8A

20mOhm @ 9.1A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.3W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJ914EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고9,000

-

30V

30A (Tc)

12mOhm @ 4.5A, 10V

2.5V @ 250µA

25nC @ 10V

1110pF @ 15V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ204EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고27,000

-

12V

20A (Tc), 60A (Tc)

8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V

1.5V @ 250µA

20nC @ 10V, 50nC @ 10V

1400pF @ 6V, 3700pF @ 6V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SQJ914EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고37,500

-

30V

30A (Tc)

12mOhm @ 4.5A, 10V

2.5V @ 250µA

25nC @ 10V

1110pF @ 15V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZ320DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 30A/40A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고17,595

-

25V

30A (Tc), 40A (Tc)

8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V

2.4V @ 250µA

8.9nC @ 4.5V, 11.9nC @ 4.5V

660pF @ 12.5V, 1370pF @ 12.5V

16.7W, 31W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SQJ992EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고23,757

-

60V

15A (Tc)

56.2mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIS903DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

재고64,770

-

20V

6A (Tc)

20.1mOhm @ 5A, 4.5V

1V @ 250µA

42nC @ 10V

2565pF @ 10V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

SI4534DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Power - Max: 2W (Ta), 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고30,075

-

60V

6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)

29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V

3V @ 250µA

11nC @ 10V, 22nC @ 10V

420pF @ 30V, 650pF @ 30V

2W (Ta), 3.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIZF920DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 28A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고6,633

-

30V

28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)

3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V

2.4V @ 250µA, 2.2V @ 250µA

29nC @ 10V, 125nC @ 10V

1300pF @ 15V, 5230pF @ 15V

3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQ1563AEH-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 20V 0.85A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

패키지: -

재고10,518

-

20V

850mA (Tc)

280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V

1.5V @ 250µA

1.25nC @ 4.5V, 1.33nC @ 4.5V

89pF @ 10V, 84pF @ 10V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SI4946CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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-

60V

5.2A (Ta), 6.1A (Tc)

40.9mOhm @ 5.2A, 10V

3V @ 250µA

10nC @ 10V

350pF @ 30V

2W (Ta), 2.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIZF914DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 23.5A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

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-

25V

23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)

3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V

2.4V @ 250µA, 2.2V @ 250µA

21nC @ 10V, 98nC @ 10V

1050pF @ 10V, 4670pF @ 10V

3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SIZ260DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 80V 8.9A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

재고2,508

-

80V

8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)

24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V

2.4V @ 250µA

27nC @ 10V

820pF @ 40V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SI9634DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.2A/8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 2W (Ta), 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고29,919

-

60V

6.2A (Ta), 8A (Tc)

29mOhm @ 5A, 10V

3V @ 250µA

11nC @ 10V

420pF @ 30V

2W (Ta), 3.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI1965DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

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-

12V

1.14A (Ta), 1.3A (Tc)

390mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SISF06DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 28A PPAK 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD

패키지: -

재고34,188

-

30V

28A (Ta), 101A (Tc)

4.5mOhm @ 7A, 10V

2.3V @ 250µA

45nC @ 10V

2050pF @ 15V

5.2W (Ta), 69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD