페이지 6 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SQJ504EP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고26,688	-	40V	30A (Tc)	7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V	2.5V @ 250µA	30nC @ 10V, 85nC @ 10V	1900pF @ 25V, 4600pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJB00EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	패키지: -	재고6,708	-	60V	30A (Tc)	13mOhm @ 10A, 10V	3.5V @ 250µA	35nC @ 10V	1700pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ980AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 75V 17A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고17,934	-	75V	17A (Tc)	50mOhm @ 3.8A, 10V	2.5V @ 250µA	21nC @ 10V	790pF @ 35V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJQ936E-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 100A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	Request a Quote	-	40V	100A (Tc)	2.3mOhm @ 5A, 10V	3.5V @ 250µA	113nC @ 10V	6600pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SISF20DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 14A/52A PPAK 12 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Dual Supplier Device Package: PowerPAK® 1212-8SCD Dual	패키지: -	Request a Quote	-	60V	14A (Ta), 52A (Tc)	13mOhm @ 7A, 10V	3V @ 250µA	33nC @ 10V	1290pF @ 30V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD Dual	PowerPAK® 1212-8SCD Dual
SIZ348DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 18A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고17,520	-	30V	18A (Ta), 30A (Tc)	7.12mOhm @ 15A, 10V	2.4V @ 250µA	18.2nC @ 10V	820pF @ 15V	3.7W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQ4532AEY-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 30V 7.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Power - Max: 3.3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고1,365	-	30V	7.3A (Tc), 5.3A (Tc)	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V	2.5V @ 250µA	7.8nC @ 10V, 10.2nC @ 10V	535pF @ 15V, 528pF @ 15V	3.3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQ4532AEY-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 30V 7.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고9,534	-	30V	7.3A (Tc), 5.3A (Tc)	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V	2.5V @ 250µA	7.8nC @ 10V, 10.2nC @ 10V	535pF @ 15V, 528pF @ 15V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI1967DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 20V 1A/1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고3,129	-	20V	1A (Ta), 1.3A (Tc)	490mOhm @ 910mA, 4.5V	1V @ 250µA	4nC @ 10V	110pF @ 10V	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJB70EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 11.3A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고7,674	-	100V	11.3A (Tc)	95mOhm @ 4A, 10V	3.5V @ 250µA	7nC @ 10V	220pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI7530DP-T1-E3	Vishay Siliconix	MOSFET N/P-CH 60V 3A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W, 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	Logic Level Gate	60V	3A, 3.2A	75mOhm @ 4.6A, 10V	3V @ 250µA	20nC @ 10V	-	1.4W, 1.5W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZF916DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고2,733	-	30V	23A (Ta), 40A (Tc)	4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V	2.4V @ 250µA, 2.2V @ 250µA	22nC @ 10V, 95nC @ 10V	1060pF @ 15V, 4320pF @ 15V	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQJ504EP-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고8,388	-	40V	30A (Tc)	7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V	2.5V @ 250µA	30nC @ 10V, 85nC @ 10V	1900pF @ 25V, 4600pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ260EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고8,994	-	60V	20A (Tc), 54A (Tc)	19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V	2.5V @ 250µA	20nC @ 10V, 40nC @ 10V	1100pF @ 25V, 2500pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SI4953ADY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	30V	3.7A	53mOhm @ 4.9A, 10V	1V @ 250µA (Min)	25nC @ 10V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIZF640DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 41A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc) Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V Power - Max: 4.2W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerDFN Supplier Device Package: PowerPAIR® 6x5FS	패키지: -	Request a Quote	-	40V	41A (Ta), 159A (Tc)	1.37mOhm @ 15A, 10V	2.4V @ 250µA	106nC @ 10V	5750pF @ 20V	4.2W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PowerPAIR® 6x5FS
SQJ951EP-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Power - Max: 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고17,205	-	30V	30A (Tc)	17mOhm @ 7.5A, 10V	2.5V @ 250µA	50nC @ 10V	1680pF @ 10V	56W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZ256DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 70V 11.5A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	재고9,000	-	70V	11.5A (Ta), 31.8A (Tc)	17.6mOhm @ 7A, 4.5V	1.5V @ 250µA	27nC @ 10V	1060pF @ 35V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SIZF906BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 36A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고85,068	-	30V	36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)	2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V	2.2V @ 250µA	49nC @ 10V, 165nC @ 10V	1630pF @ 15V, 5550pF @ 15V	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SIZ998DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 20A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V Power - Max: 20.2W, 32.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고11,700	-	30V	20A (Tc), 60A (Tc)	6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V	2.2V @ 250µA	8.1nC @ 4.5V, 19.8nC @ 4.5V	930pF @ 15V, 2620pF @ 15V	20.2W, 32.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQJQ906E-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 95A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	패키지: -	재고5,166	-	40V	95A (Tc)	3.3mOhm @ 5A, 10V	3.5V @ 250µA	42nC @ 10V	3600pF @ 20V	50W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SI6562CDQ-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 20V 5.7A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	재고9,714	-	20V	5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)	22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V	1.5V @ 250µA	23nC @ 10V, 51nC @ 10V	850pF @ 10V, 1200pF @ 10V	1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SQJ958EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 34.9mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V Power - Max: 35W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고8,913	-	60V	20A (Tc)	34.9mOhm @ 4.5A, 10V	2.5V @ 250µA	23nC @ 10V	1075pF @ 30V	35W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZ240DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 17.2A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	패키지: -	Request a Quote	-	40V	17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)	8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V	2.4V @ 250µA	23nC @ 10V, 22nC @ 10V	1180pF @ 20V, 1070pF @ 20V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SI5980DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 2.5A CHIPFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V Power - Max: 7.8W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® ChipFET™ Dual Supplier Device Package: PowerPAK® ChipFet Dual	패키지: -	Request a Quote	-	100V	2.5A	567mOhm @ 400mA, 10V	4V @ 250µA	3.3nC @ 10V	78pF @ 50V	7.8W	-	Surface Mount	PowerPAK® ChipFET™ Dual	PowerPAK® ChipFet Dual
SQ4946CEY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고32,814	-	60V	7A (Tc)	40mOhm @ 4.5A, 10V	2.5V @ 250µA	22nC @ 10V	865pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3911DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 1.8A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	Request a Quote	Logic Level Gate	20V	1.8A	145mOhm @ 2.2A, 4.5V	450mV @ 250µA (Min)	7.5nC @ 4.5V	-	830mW	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI6562DQ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 8-TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	Logic Level Gate	20V	-	30mOhm @ 4.5A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

SQJ504EP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고26,688

-

40V

30A (Tc)

7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V

2.5V @ 250µA

30nC @ 10V, 85nC @ 10V

1900pF @ 25V, 4600pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJB00EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

패키지: -

재고6,708

-

60V

30A (Tc)

13mOhm @ 10A, 10V

3.5V @ 250µA

35nC @ 10V

1700pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

SQJ980AEP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 75V 17A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고17,934

-

75V

17A (Tc)

50mOhm @ 3.8A, 10V

2.5V @ 250µA

21nC @ 10V

790pF @ 35V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJQ936E-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

패키지: -

Request a Quote

-

40V

100A (Tc)

2.3mOhm @ 5A, 10V

3.5V @ 250µA

113nC @ 10V

6600pF @ 25V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SISF20DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 14A/52A PPAK 12

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Supplier Device Package: PowerPAK® 1212-8SCD Dual

패키지: -

Request a Quote

-

60V

14A (Ta), 52A (Tc)

13mOhm @ 7A, 10V

3V @ 250µA

33nC @ 10V

1290pF @ 30V

5.2W (Ta), 69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD Dual

SIZ348DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 18A/30A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고17,520

-

30V

18A (Ta), 30A (Tc)

7.12mOhm @ 15A, 10V

2.4V @ 250µA

18.2nC @ 10V

820pF @ 15V

3.7W (Ta), 16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SQ4532AEY-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Power - Max: 3.3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고1,365

-

30V

7.3A (Tc), 5.3A (Tc)

31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V

2.5V @ 250µA

7.8nC @ 10V, 10.2nC @ 10V

535pF @ 15V, 528pF @ 15V

3.3W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQ4532AEY-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고9,534

-

30V

7.3A (Tc), 5.3A (Tc)

31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V

2.5V @ 250µA

7.8nC @ 10V, 10.2nC @ 10V

535pF @ 15V, 528pF @ 15V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI1967DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 20V 1A/1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고3,129

-

20V

1A (Ta), 1.3A (Tc)

490mOhm @ 910mA, 4.5V

1V @ 250µA

4nC @ 10V

110pF @ 10V

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJB70EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 11.3A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고7,674

-

100V

11.3A (Tc)

95mOhm @ 4A, 10V

3.5V @ 250µA

7nC @ 10V

220pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI7530DP-T1-E3

Vishay Siliconix

MOSFET N/P-CH 60V 3A PPAK SO-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W, 1.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

Request a Quote

Logic Level Gate

60V

3A, 3.2A

75mOhm @ 4.6A, 10V

3V @ 250µA

20nC @ 10V

-

1.4W, 1.5W

-

Surface Mount

PowerPAK® SO-8 Dual

SIZF916DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고2,733

-

30V

23A (Ta), 40A (Tc)

4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V

2.4V @ 250µA, 2.2V @ 250µA

22nC @ 10V, 95nC @ 10V

1060pF @ 15V, 4320pF @ 15V

3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQJ504EP-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고8,388

-

40V

30A (Tc)

7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V

2.5V @ 250µA

30nC @ 10V, 85nC @ 10V

1900pF @ 25V, 4600pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ260EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고8,994

-

60V

20A (Tc), 54A (Tc)

19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V

2.5V @ 250µA

20nC @ 10V, 40nC @ 10V

1100pF @ 25V, 2500pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SI4953ADY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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Logic Level Gate

30V

3.7A

53mOhm @ 4.9A, 10V

1V @ 250µA (Min)

25nC @ 10V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIZF640DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 41A PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V
Power - Max: 4.2W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerDFN
Supplier Device Package: PowerPAIR® 6x5FS

패키지: -

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-

40V

41A (Ta), 159A (Tc)

1.37mOhm @ 15A, 10V

2.4V @ 250µA

106nC @ 10V

5750pF @ 20V

4.2W (Ta), 62.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerDFN

PowerPAIR® 6x5FS

SQJ951EP-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고17,205

-

30V

30A (Tc)

17mOhm @ 7.5A, 10V

2.5V @ 250µA

50nC @ 10V

1680pF @ 10V

56W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZ256DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 70V 11.5A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

재고9,000

-

70V

11.5A (Ta), 31.8A (Tc)

17.6mOhm @ 7A, 4.5V

1.5V @ 250µA

27nC @ 10V

1060pF @ 35V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SIZF906BDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 36A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고85,068

-

30V

36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)

2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V

2.2V @ 250µA

49nC @ 10V, 165nC @ 10V

1630pF @ 15V, 5550pF @ 15V

4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SIZ998DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Power - Max: 20.2W, 32.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고11,700

-

30V

20A (Tc), 60A (Tc)

6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V

2.2V @ 250µA

8.1nC @ 4.5V, 19.8nC @ 4.5V

930pF @ 15V, 2620pF @ 15V

20.2W, 32.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQJQ906E-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

패키지: -

재고5,166

-

40V

95A (Tc)

3.3mOhm @ 5A, 10V

3.5V @ 250µA

42nC @ 10V

3600pF @ 20V

50W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SI6562CDQ-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 20V 5.7A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

재고9,714

-

20V

5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)

22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V

1.5V @ 250µA

23nC @ 10V, 51nC @ 10V

850pF @ 10V, 1200pF @ 10V

1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SQJ958EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 34.9mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
Power - Max: 35W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고8,913

-

60V

20A (Tc)

34.9mOhm @ 4.5A, 10V

2.5V @ 250µA

23nC @ 10V

1075pF @ 30V

35W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZ240DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 17.2A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

패키지: -

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-

40V

17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)

8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V

2.4V @ 250µA

23nC @ 10V, 22nC @ 10V

1180pF @ 20V, 1070pF @ 20V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SI5980DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V
Power - Max: 7.8W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Supplier Device Package: PowerPAK® ChipFet Dual

패키지: -

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-

100V

2.5A

567mOhm @ 400mA, 10V

4V @ 250µA

3.3nC @ 10V

78pF @ 50V

7.8W

-

Surface Mount

PowerPAK® ChipFET™ Dual

PowerPAK® ChipFet Dual

SQ4946CEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고32,814

-

60V

7A (Tc)

40mOhm @ 4.5A, 10V

2.5V @ 250µA

22nC @ 10V

865pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI3911DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 1.8A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

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Logic Level Gate

20V

1.8A

145mOhm @ 2.2A, 4.5V

450mV @ 250µA (Min)

7.5nC @ 4.5V

-

830mW

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI6562DQ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

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Logic Level Gate

20V

-

30mOhm @ 4.5A, 4.5V

600mV @ 250µA (Min)

25nC @ 4.5V

-

1W

-

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP