페이지 7 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4931DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,696	Logic Level Gate	12V	6.7A	18 mOhm @ 8.9A, 4.5V	1V @ 350µA	52nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4931DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고246,120	Logic Level Gate	12V	6.7A	18 mOhm @ 8.9A, 4.5V	1V @ 350µA	52nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4925DDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Power - Max: 5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고48,180	Standard	30V	8A	29 mOhm @ 7.3A, 10V	3V @ 250µA	50nC @ 10V	1350pF @ 15V	5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7232DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 25A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고75,822	Logic Level Gate	20V	25A	16.4 mOhm @ 10A, 4.5V	1V @ 250µA	32nC @ 8V	1220pF @ 10V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4599DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power - Max: 3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고498,456	Logic Level Gate	40V	6.8A, 5.8A	35.5 mOhm @ 5A, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI9926CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고510,372	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI9945BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고519,168	Logic Level Gate	60V	5.3A	58 mOhm @ 4.3A, 10V	3V @ 250µA	20nC @ 10V	665pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4532ADY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.13W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고847,224	Logic Level Gate	30V	3.7A, 3A	53 mOhm @ 4.9A, 10V	1V @ 250µA (Min)	16nC @ 10V	-	1.13W, 1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4936BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고834,072	Logic Level Gate	30V	6.9A	35 mOhm @ 5.9A, 10V	3V @ 250µA	15nC @ 10V	530pF @ 15V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6926ADQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,280	Logic Level Gate	20V	4.1A	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI9933CDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Power - Max: 3.1W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,249,200	Logic Level Gate	20V	4A	58 mOhm @ 4.8A, 4.5V	1.4V @ 250µA	26nC @ 10V	665pF @ 10V	3.1W	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3900DV-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고539,556	Logic Level Gate	20V	2A	125 mOhm @ 2.4A, 4.5V	1.5V @ 250µA	4nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI3590DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고187,140	Logic Level Gate	30V	2.5A, 1.7A	77 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI3932DV-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 3.7A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고652,572	Logic Level Gate	30V	3.7A	58 mOhm @ 3.4A, 10V	2.2V @ 250µA	6nC @ 10V	235pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SIA910EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고457,260	Logic Level Gate	12V	4.5A	28 mOhm @ 5.2A, 4.5V	1V @ 250µA	16nC @ 8V	455pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SIA906EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고484,956	Logic Level Gate	20V	4.5A	46 mOhm @ 3.9A, 4.5V	1.4V @ 250µA	12nC @ 10V	350pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SIA527DJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고55,668	Logic Level Gate	12V	4.5A	29 mOhm @ 5A, 4.5V	1V @ 250µA	15nC @ 8V	500pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI1025X-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 0.19A SC-89 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고72,000	Logic Level Gate	60V	190mA	4 Ohm @ 500mA, 10V	3V @ 250µA	1.7nC @ 15V	23pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SI1926DL-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 0.37A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고161,292	Logic Level Gate	60V	370mA	1.4 Ohm @ 340mA, 10V	2.5V @ 250µA	1.4nC @ 10V	18.5pF @ 30V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1024X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.485A SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고943,308	Logic Level Gate	20V	485mA	700 mOhm @ 600mA, 4.5V	900mV @ 250µA	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SI1922EDH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고722,952	Logic Level Gate	20V	1.3A	198 mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1902DL-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 0.66A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고2,961,552	Logic Level Gate	20V	660mA	385 mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1026X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 0.305A SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고1,139,760	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA, 10V	2.5V @ 250µA	0.6nC @ 4.5V	30pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SI1539CDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V SOT363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Rds On (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고621,324	Logic Level Gate	30V	700mA, 500mA	388 mOhm @ 600mA, 10V	2.5V @ 250µA	1.5nC @ 10V	28pF @ 15V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SI1539DDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	30V	700mA (Tc), 460mA (Tc)	388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.1nC @ 4.5V, 1.2nC @ 4.5V	28pF @ 15V, 21pF @ 15V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQJB48EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고8,850	-	40V	30A (Tc)	5.2mOhm @ 8A, 10V	3.3V @ 250µA	40nC @ 10V	2350pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI7501DN-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 5.4A 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	Request a Quote	Logic Level Gate	30V	5.4A, 4.5A	35mOhm @ 7.7A, 10V	3V @ 250µA	14nC @ 10V	-	1.6W	-	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SIZ322DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Power - Max: 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고26,130	-	25V	30A (Tc)	6.35mOhm @ 15A, 10V	2.4V @ 250µA	20.1nC @ 10V	950pF @ 12.5V	16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)

SI4931DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,696

Logic Level Gate

12V

6.7A

18 mOhm @ 8.9A, 4.5V

1V @ 350µA

52nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4931DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고246,120

Logic Level Gate

12V

6.7A

18 mOhm @ 8.9A, 4.5V

1V @ 350µA

52nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4925DDY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Power - Max: 5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고48,180

Standard

30V

8A

29 mOhm @ 7.3A, 10V

3V @ 250µA

50nC @ 10V

1350pF @ 15V

5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7232DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 25A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고75,822

Logic Level Gate

20V

25A

16.4 mOhm @ 10A, 4.5V

1V @ 250µA

32nC @ 8V

1220pF @ 10V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4599DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고498,456

Logic Level Gate

40V

6.8A, 5.8A

35.5 mOhm @ 5A, 10V

3V @ 250µA

20nC @ 10V

640pF @ 20V

3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI9926CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고510,372

Logic Level Gate

20V

8A

18 mOhm @ 8.3A, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI9945BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고519,168

Logic Level Gate

60V

5.3A

58 mOhm @ 4.3A, 10V

3V @ 250µA

20nC @ 10V

665pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4532ADY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고847,224

Logic Level Gate

30V

3.7A, 3A

53 mOhm @ 4.9A, 10V

1V @ 250µA (Min)

16nC @ 10V

-

1.13W, 1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4936BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고834,072

Logic Level Gate

30V

6.9A

35 mOhm @ 5.9A, 10V

3V @ 250µA

15nC @ 10V

530pF @ 15V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6926ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,280

Logic Level Gate

20V

4.1A

30 mOhm @ 4.5A, 4.5V

1V @ 250µA

10.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI9933CDY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,249,200

Logic Level Gate

20V

4A

58 mOhm @ 4.8A, 4.5V

1.4V @ 250µA

26nC @ 10V

665pF @ 10V

3.1W

-50°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3900DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 2A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고539,556

Logic Level Gate

20V

2A

125 mOhm @ 2.4A, 4.5V

1.5V @ 250µA

4nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI3590DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고187,140

Logic Level Gate

30V

2.5A, 1.7A

77 mOhm @ 3A, 4.5V

1.5V @ 250µA

4.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI3932DV-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 3.7A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고652,572

Logic Level Gate

30V

3.7A

58 mOhm @ 3.4A, 10V

2.2V @ 250µA

6nC @ 10V

235pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SIA910EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 4.5A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고457,260

Logic Level Gate

12V

4.5A

28 mOhm @ 5.2A, 4.5V

1V @ 250µA

16nC @ 8V

455pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SIA906EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고484,956

Logic Level Gate

20V

4.5A

46 mOhm @ 3.9A, 4.5V

1.4V @ 250µA

12nC @ 10V

350pF @ 10V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SIA527DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC-70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고55,668

Logic Level Gate

12V

4.5A

29 mOhm @ 5A, 4.5V

1V @ 250µA

15nC @ 8V

500pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI1025X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SC-89

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고72,000

Logic Level Gate

60V

190mA

4 Ohm @ 500mA, 10V

3V @ 250µA

1.7nC @ 15V

23pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SI1926DL-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 0.37A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고161,292

Logic Level Gate

60V

370mA

1.4 Ohm @ 340mA, 10V

2.5V @ 250µA

1.4nC @ 10V

18.5pF @ 30V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1024X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.485A SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고943,308

Logic Level Gate

20V

485mA

700 mOhm @ 600mA, 4.5V

900mV @ 250µA

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SI1922EDH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고722,952

Logic Level Gate

20V

1.3A

198 mOhm @ 1A, 4.5V

1V @ 250µA

2.5nC @ 8V

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1902DL-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고2,961,552

Logic Level Gate

20V

660mA

385 mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1026X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고1,139,760

Logic Level Gate

60V

305mA

1.4 Ohm @ 500mA, 10V

2.5V @ 250µA

0.6nC @ 4.5V

30pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SI1539CDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V SOT363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고621,324

Logic Level Gate

30V

700mA, 500mA

388 mOhm @ 600mA, 10V

2.5V @ 250µA

1.5nC @ 10V

28pF @ 15V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SI1539DDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

Request a Quote

-

30V

700mA (Tc), 460mA (Tc)

388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V

2.5V @ 250µA, 3V @ 250µA

1.1nC @ 4.5V, 1.2nC @ 4.5V

28pF @ 15V, 21pF @ 15V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQJB48EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고8,850

-

40V

30A (Tc)

5.2mOhm @ 8A, 10V

3.3V @ 250µA

40nC @ 10V

2350pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SI7501DN-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

Request a Quote

Logic Level Gate

30V

5.4A, 4.5A

35mOhm @ 7.7A, 10V

3V @ 250µA

14nC @ 10V

-

1.6W

-

Surface Mount

PowerPAK® 1212-8 Dual

SIZ322DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 30A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Power - Max: 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고26,130

-

25V

30A (Tc)

6.35mOhm @ 15A, 10V

2.4V @ 250µA

20.1nC @ 10V

950pF @ 12.5V

16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)