페이지 11 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 196R E6501	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고6,752	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16.5dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
MRF555G	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,888	16V	470MHz	-	12.5dB	3W	50 @ 100mA, 5V	500mA	-	-	-	-
2SC5551AF-TD-E	ON Semiconductor	TRANS NPN BIPO HI FREQ PCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고2,000	30V	3.5GHz	-	-	1.3W	135 @ 50mA, 5V	300mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
NE687M33-T3-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고5,088	3V	12GHz	1.5dB ~ 2dB @ 2GHz	-	90mW	70 @ 10mA, 1V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE687M03-A	CEL	TRANSISTOR NPN 2GHZ MINIMOLD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: 3-SuperMiniMold (M03)	패키지: SOT-623F	재고6,400	3V	14GHz	1.3dB ~ 2dB @ 2GHz	-	90mW	70 @ 20mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-623F	3-SuperMiniMold (M03)
KSC1674OTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,856	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF199	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,075,936	25V	1.1GHz	-	-	350mW	38 @ 7mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFR94A,215	NXP	TRANS NPN 5GHZ TO-236AB Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,608	15V	5GHz	2.1dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	65 @ 15mA, 10V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MS2473	Microsemi Corporation	TRANS RF BIPO 2300W 46A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	패키지: M112	재고6,384	65V	1.09GHz	-	6dB	2300W	5 @ 1A, 5V	46A	200°C (TJ)	Chassis Mount	M112	M112
10A060	Microsemi Corporation	TRANS RF BIPO 21W 3A 55FT-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 21W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: 55FT	재고7,984	24V	1GHz	-	8dB ~ 8.5dB	21W	20 @ 400mA, 5V	3A	200°C (TJ)	Stud Mount	55FT	55FT
JANTX2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고7,248	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC39310CL	Panasonic Electronic Components	TRANS NPN 20VCEO 15MA S-MINI 3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고23,916	20V	650MHz	3.3dB @ 100MHz	24dB	150mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
HFA3102BZ96	Intersil	IC TRANS ARRAY DUAL NPN 14-SOIC Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고4,320	12V	10GHz	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz	12.4dB ~ 17.5dB	250mW	40 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
CMPT918 TR	Central Semiconductor Corp	TRANS NPN 30V 50MA SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 11dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,024	15V	600MHz	6dB @ 60MHz	11dB	350mW	20 @ 3mA, 1V	50mA	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFP740FH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz Gain: 27.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고27,330	4.7V	42GHz	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz	27.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
CM5160	Central Semiconductor Corp	TRANS PNP 60V 0.4A TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고7,552	40V	500MHz	-	-	1W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFP420H6327XTSA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고43,218	5V	25GHz	1.1dB @ 1.8GHz	21dB	160mW	60 @ 20mA, 4V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
KSP10TA	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 25V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고19,182	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BFU520AR	NXP	TRANS RF NPN 12V 30MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Gain: 18dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고22,944	12V	10GHz	0.7dB @ 900MHz	18dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFR 92P E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고561,240	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	280mW	70 @ 15mA, 8V	45mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFR360L3E6765XTMA1	Infineon Technologies	RF TRANS NPN 9V 14GHZ TSLP-3-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Gain: 11.5dB ~ 16dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	패키지: -	Request a Quote	9V	14GHz	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz	11.5dB ~ 16dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
BFW16A	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	25V	1.2GHz	-	-	1.5W	25 @ 50mA, 5V	150mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1372-06H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5109UB-BK	Central Semiconductor Corp	RF TRANS NPN 20V 1.2GHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3.5dB @ 200MHz Gain: 11dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	20V	1.2GHz	3.5dB @ 200MHz	11dB	1W	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
PH1617-2	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,WLESS,2W,1.6- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.7GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	패키지: -	Request a Quote	65V	1.7GHz	-	10dB	13.5W	-	2A	200°C	Chassis Mount	2L-FLG	-
CP229-2N5109-CM	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	-	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
2SC3779D	Sanyo	UHF LOW-NOISE AMPLIFIER Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVF6001SB6T1G	onsemi	RF TRANS NPN 0.1A 12V MCPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	패키지: -	재고8,649	12V	6.7GHz	1.1dB @ 1GHz	11dB	800mW	90 @ 30mA, 5V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH

BFP 196R E6501

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고6,752

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16.5dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

MRF555G

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,888

16V

470MHz

-

12.5dB

3W

50 @ 100mA, 5V

500mA

-

2SC5551AF-TD-E

ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고2,000

30V

3.5GHz

-

1.3W

135 @ 50mA, 5V

300mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

NE687M33-T3-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고5,088

3V

12GHz

1.5dB ~ 2dB @ 2GHz

-

90mW

70 @ 10mA, 1V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE687M03-A

CEL

TRANSISTOR NPN 2GHZ MINIMOLD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: 3-SuperMiniMold (M03)

패키지: SOT-623F

재고6,400

3V

14GHz

1.3dB ~ 2dB @ 2GHz

-

90mW

70 @ 20mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-623F

3-SuperMiniMold (M03)

KSC1674OTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,856

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF199

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,075,936

25V

1.1GHz

-

350mW

38 @ 7mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFR94A,215

NXP

TRANS NPN 5GHZ TO-236AB

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,608

15V

5GHz

2.1dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

65 @ 15mA, 10V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MS2473

Microsemi Corporation

TRANS RF BIPO 2300W 46A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
Current - Collector (Ic) (Max): 46A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

패키지: M112

재고6,384

65V

1.09GHz

-

6dB

2300W

5 @ 1A, 5V

46A

200°C (TJ)

Chassis Mount

M112

10A060

Microsemi Corporation

TRANS RF BIPO 21W 3A 55FT-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 21W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: 55FT

재고7,984

24V

1GHz

-

8dB ~ 8.5dB

21W

20 @ 400mA, 5V

3A

200°C (TJ)

Stud Mount

55FT

JANTX2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고7,248

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC39310CL

Panasonic Electronic Components

TRANS NPN 20VCEO 15MA S-MINI 3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고23,916

20V

650MHz

3.3dB @ 100MHz

24dB

150mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

HFA3102BZ96

Intersil

IC TRANS ARRAY DUAL NPN 14-SOIC

Transistor Type: 6 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Gain: 12.4dB ~ 17.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고4,320

12V

10GHz

1.8dB ~ 2.1dB @ 500MHz ~ 1GHz

12.4dB ~ 17.5dB

250mW

40 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

CMPT918 TR

Central Semiconductor Corp

TRANS NPN 30V 50MA SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 11dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,024

15V

600MHz

6dB @ 60MHz

11dB

350mW

20 @ 3mA, 1V

50mA

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFP740FH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Gain: 27.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고27,330

4.7V

42GHz

0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz

27.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

CM5160

Central Semiconductor Corp

TRANS PNP 60V 0.4A TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고7,552

40V

500MHz

-

1W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFP420H6327XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고43,218

5V

25GHz

1.1dB @ 1.8GHz

21dB

160mW

60 @ 20mA, 4V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

KSP10TA

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고19,182

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BFU520AR

NXP

TRANS RF NPN 12V 30MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Gain: 18dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고22,944

12V

10GHz

0.7dB @ 900MHz

18dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFR 92P E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고561,240

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

280mW

70 @ 15mA, 8V

45mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFR360L3E6765XTMA1

Infineon Technologies

RF TRANS NPN 9V 14GHZ TSLP-3-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

패키지: -

Request a Quote

9V

14GHz

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

11.5dB ~ 16dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

BFW16A

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

25V

1.2GHz

-

1.5W

25 @ 50mA, 5V

150mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SD1372-06H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N5109UB-BK

Central Semiconductor Corp

RF TRANS NPN 20V 1.2GHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
Gain: 11dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

20V

1.2GHz

3.5dB @ 200MHz

11dB

1W

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

PH1617-2

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,WLESS,2W,1.6-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

패키지: -

Request a Quote

65V

1.7GHz

-

10dB

13.5W

-

2A

200°C

Chassis Mount

2L-FLG

-

CP229-2N5109-CM

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

-

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

Die

2SC3779D

Sanyo

UHF LOW-NOISE AMPLIFIER

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NSVF6001SB6T1G

onsemi

RF TRANS NPN 0.1A 12V MCPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

패키지: -

재고8,649

12V

6.7GHz

1.1dB @ 1GHz

11dB

800mW

90 @ 30mA, 5V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH