페이지 8 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF8372GR2	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,100	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC4536-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고221,112	15V	5.5GHz	2dB @ 1GHz	7dB	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MS1337	Microsemi Corporation	TRANS RF BIPO 70W 8A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고3,568	18V	175MHz	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis Mount	M113	M113
MAX2601ESA-T	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고2,416	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
EC4H08C-TL-H	ON Semiconductor	TRANS NPN 3.5V 15MA ECSP1008-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 17dB Power - Max: 50mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFDFN Supplier Device Package: 4-ECSP1008	패키지: 4-UFDFN	재고120,000	3.5V	24GHz	1.5dB @ 2GHz	17dB	50mW	70 @ 5mA, 1V	15mA	150°C (TJ)	Surface Mount	4-UFDFN	4-ECSP1008
AT-41586-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고12,960	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
NE85633-R25-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고5,840	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE68518-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고7,872	6V	12GHz	1.5dB @ 2GHz	11dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
KSC1674CYBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,384	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC2786RTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)	재고3,168	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
KSC2786OBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body	재고2,816	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
NE461M02-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고6,448	15V	-	1.5dB ~ 2dB @ 500MHz ~ 1GHz	8.3dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JTDB75	Microsemi Corporation	TRANS RF BIPO 220W 8A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.2dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	패키지: 55AW	재고5,760	55V	960MHz ~ 1.215GHz	-	7dB ~ 8.2dB	220W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2731-20	Microsemi Corporation	TRANS RF BIPO 70W 1.85 55KCR-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.85A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KCR-1 Supplier Device Package: 55KCR-1	패키지: 55KCR-1	재고2,896	65V	2.7GHz ~ 3.1GHz	-	8.2dB	70W	-	1.85A	200°C (TJ)	Chassis Mount	55KCR-1	55KCR-1
1090MP	Microsemi Corporation	TRANS RF BIPO 250W 6.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.08dB ~ 8.5dB Power - Max: 250W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 6.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	패키지: 55FW-1	재고7,776	65V	1.025GHz ~ 1.15GHz	-	8.08dB ~ 8.5dB	250W	15 @ 500mA, 5V	6.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
HFA3096BZ96	Intersil	IC TRANS ARRAY NPN/PNP 16-SOIC Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고5,184	12V, 15V	8GHz, 5.5GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V / 20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SRF4427	Microsemi Corporation	TRANS RF BIPO 1.5W 400MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): - Gain: 17dB ~ 18dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,672	18V	1.3GHz	-	17dB ~ 18dB	1.5W	20 @ 150mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC4713KT146R	Rohm Semiconductor	TRANS RF SW 6V 50MA SMT3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고15,624	6V	800MHz	-	-	200mW	180 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
MRF10031	M/A-Com Technology Solutions	TRANS NPN 30W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 332A-03 Supplier Device Package: 332A-03, Style 2	패키지: 332A-03	재고6,320	55V	-	-	9.5dB	30W	20 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	332A-03	332A-03, Style 2
AT-32063-TR1G	Broadcom Limited	IC TRANS NPN BIPOLAR SOT363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 12.5dB ~ 14.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,413,200	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	12.5dB ~ 14.5dB	150mW	50 @ 5mA, 2.7V	32mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BFU760F,115	NXP	TRANS RF NPN 2.8V 70MA SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz Gain: - Power - Max: 220mW DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	패키지: SOT-343F	재고4,080	2.8V	45GHz	0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz	-	220mW	155 @ 10mA, 2V	70mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
2SC48350RL	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz Gain: 11dB ~ 14dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고26,304	10V	6GHz	1.3dB ~ 2dB @ 800MHz	11dB ~ 14dB	150mW	80 @ 20mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
HFA3096BZ	Intersil	IC TRANSISTOR ARRAY UHF 16-SOIC Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고7,904	12V, 15V	8GHz, 5.5GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V / 20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
2N5109	Central Semiconductor Corp	TRANS RF NPN 20V 400MA TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고19,092	20V	1.2GHz	3dB @ 200MHz	-	1W	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NTE195A	NTE Electronics, Inc	RF TRANS NPN 70V TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 2V Current - Collector (Ic) (Max): 1.5A Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	70V	-	-	10dB	8W	30 @ 400mA, 2V	1.5A	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS1076A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MMBTH10LT1	onsemi	TRANS SS VHF NPN 25V SOT23 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP229-2N5109-CT20	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	-	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die

MRF8372GR2

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,100

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC4536-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 7dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고221,112

15V

5.5GHz

2dB @ 1GHz

7dB

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MS1337

Microsemi Corporation

TRANS RF BIPO 70W 8A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고3,568

18V

175MHz

-

10dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Chassis Mount

M113

MAX2601ESA-T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고2,416

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

EC4H08C-TL-H

ON Semiconductor

TRANS NPN 3.5V 15MA ECSP1008-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 17dB
Power - Max: 50mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFDFN
Supplier Device Package: 4-ECSP1008

패키지: 4-UFDFN

재고120,000

3.5V

24GHz

1.5dB @ 2GHz

17dB

50mW

70 @ 5mA, 1V

15mA

150°C (TJ)

Surface Mount

4-UFDFN

4-ECSP1008

AT-41586-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 8dB ~ 17dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고12,960

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

8dB ~ 17dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

NE85633-R25-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고5,840

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE68518-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고7,872

6V

12GHz

1.5dB @ 2GHz

11dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

KSC1674CYBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,384

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC2786RTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)

재고3,168

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

KSC2786OBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body

재고2,816

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

NE461M02-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고6,448

15V

-

1.5dB ~ 2dB @ 500MHz ~ 1GHz

8.3dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JTDB75

Microsemi Corporation

TRANS RF BIPO 220W 8A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.2dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

패키지: 55AW

재고5,760

55V

960MHz ~ 1.215GHz

-

7dB ~ 8.2dB

220W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

2731-20

Microsemi Corporation

TRANS RF BIPO 70W 1.85 55KCR-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.85A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KCR-1
Supplier Device Package: 55KCR-1

패키지: 55KCR-1

재고2,896

65V

2.7GHz ~ 3.1GHz

-

8.2dB

70W

-

1.85A

200°C (TJ)

Chassis Mount

55KCR-1

1090MP

Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.08dB ~ 8.5dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

패키지: 55FW-1

재고7,776

65V

1.025GHz ~ 1.15GHz

-

8.08dB ~ 8.5dB

250W

15 @ 500mA, 5V

6.5A

200°C (TJ)

Chassis Mount

55FW-1

HFA3096BZ96

Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 12V, 15V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고5,184

12V, 15V

8GHz, 5.5GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V / 20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SRF4427

Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): -
Gain: 17dB ~ 18dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,672

18V

1.3GHz

-

17dB ~ 18dB

1.5W

20 @ 150mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC4713KT146R

Rohm Semiconductor

TRANS RF SW 6V 50MA SMT3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고15,624

6V

800MHz

-

200mW

180 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

MRF10031

M/A-Com Technology Solutions

TRANS NPN 30W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03, Style 2

패키지: 332A-03

재고6,320

55V

-

9.5dB

30W

20 @ 500mA, 5V

3A

200°C (TJ)

Chassis Mount

332A-03

332A-03, Style 2

AT-32063-TR1G

Broadcom Limited

IC TRANS NPN BIPOLAR SOT363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,413,200

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

12.5dB ~ 14.5dB

150mW

50 @ 5mA, 2.7V

32mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BFU760F,115

NXP

TRANS RF NPN 2.8V 70MA SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain: -
Power - Max: 220mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

패키지: SOT-343F

재고4,080

2.8V

45GHz

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

-

220mW

155 @ 10mA, 2V

70mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

2SC48350RL

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
Gain: 11dB ~ 14dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고26,304

10V

6GHz

1.3dB ~ 2dB @ 800MHz

11dB ~ 14dB

150mW

80 @ 20mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

HFA3096BZ

Intersil

IC TRANSISTOR ARRAY UHF 16-SOIC

Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 12V, 15V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고7,904

12V, 15V

8GHz, 5.5GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V / 20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

2N5109

Central Semiconductor Corp

TRANS RF NPN 20V 400MA TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고19,092

20V

1.2GHz

3dB @ 200MHz

-

1W

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NTE195A

NTE Electronics, Inc

RF TRANS NPN 70V TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 2V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

70V

-

10dB

8W

30 @ 400mA, 2V

1.5A

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MS1076A

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MMBTH10LT1

onsemi

TRANS SS VHF NPN 25V SOT23

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CP229-2N5109-CT20

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

-

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

Die