페이지 10 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NE85634-T1-RF-A	CEL	SAME AS 2SC3357 SAME AS 2SC3357 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고7,488	12V	6.5GHz	1.1dB @ 1GHz	9dB	1.2W	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NE462M02-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: 10dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	패키지: TO-243AA	재고2,368	12V	6GHz	3.5dB @ 1GHz	10dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	-
NSVF2250WT1	ON Semiconductor	TRANSISTOR NPN BIPO UHF SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고2,544	15V	-	-	-	-	-	50mA	-	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
BLS2731-110,114	Ampleon USA Inc.	TRANSISTOR RF POWER SOT423A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.1GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-423A Supplier Device Package: CDFM2	패키지: SOT-423A	재고5,776	75V	3.1GHz	-	7dB	500W	40 @ 3A, 5V	12A	200°C (TJ)	Surface Mount	SOT-423A	CDFM2
UPA810T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,584	12V	4.5GHz	1.2dB @ 1GHz	9dB	200mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SD1433	STMicroelectronics	TRANSISTOR NPN RF UHF 4LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 58W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	패키지: M122	재고4,496	16V	-	-	7dB	58W	10 @ 1A, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	M122	M122
SD1275-01	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: - Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고6,704	16V	-	-	9dB	70W	20 @ 250mA, 5V	8A	-	Surface Mount	M113	M113
BF494_D27Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 20V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,792	20V	-	-	-	350mW	67 @ 1mA, 10V	30mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-32032-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 13.5dB ~ 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고806,088	5.5V	-	1dB ~ 1.3dB @ 900MHz	13.5dB ~ 15dB	200mW	70 @ 5mA, 2.7V	40mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
HFA3096B	Intersil	IC TRANS ARRAY NPN/PNP 16-SOIC Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고163,080	12V, 15V	8GHz, 5.5GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V / 20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
TCS800	Microsemi Corporation	TRANS RF BIPO 1944W 50A 55SM1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 1944W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	패키지: 55SM	재고2,544	65V	1.03GHz	-	8dB ~ 9dB	1944W	20 @ 5A, 5V	50A	230°C (TJ)	Chassis Mount	55SM	55SM
UMIL80	Microsemi Corporation	TRANS RF BIPO 220W 12A 55HU-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 200MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	패키지: 55HV	재고6,672	31V	200MHz ~ 500MHz	-	9dB ~ 9.5dB	220W	10 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55HV	55HV
1075MP	Microsemi Corporation	TRANS RF BIPO 250W 6.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 8.5dB Power - Max: 250W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 6.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	패키지: 55FW-1	재고5,904	65V	1.025GHz ~ 1.15GHz	-	7.6dB ~ 8.5dB	250W	20 @ 100mA, 5V	6.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
NE68119-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 10dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고756,000	10V	7GHz	1.4dB @ 1GHz	10dB	100mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
MCH4013-TL-E	ON Semiconductor	TRANS NPN 15MA 3.5V MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 22.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 16dB Power - Max: 50mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-MCPH	패키지: SC-82A, SOT-343	재고3,936	3.5V	22.5GHz	1.5dB @ 2GHz	16dB	50mW	70 @ 5mA, 1V	15mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	4-MCPH
BFU520XVL	NXP	TRANS RF NPN 12V 30MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 18dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고3,456	12V	10.5GHz	1.1dB @ 1.8GHz	18dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
2SC5086-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고5,008	12V	7GHz	1dB @ 500MHz	-	100mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
BFP540ESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 80MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고90,954	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	21.5dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR 182 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고55,626	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	12dB ~ 18dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFT25A,215	NXP	TRANS NPN 5V 5GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Gain: - Power - Max: 32mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고84,888	5V	5GHz	1.8dB ~ 2dB @ 1GHz	-	32mW	50 @ 500µA, 1V	6.5mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
2SC4260TI-03TR-E	Renesas Electronics Corporation	FREQUENCY AMPLIFIER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RF3356-TP	Micro Commercial Co	Interface Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	12V	7GHz	1.1dB @ 1GHz	12.5dB	150mW	130 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N3866A-PBFREE	Central Semiconductor Corp	RF TRANS NPN 30V 400MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	800MHz	-	10dB	5W	25 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
64042	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1483-Y-TE12L-F	Toshiba Semiconductor and Storage	2SA1483-Y(TE12L,F) Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	패키지: -	Request a Quote	45V	200MHz	-	-	-	120 @ 10mA, 1V	200mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
MRF5812MR2	Microsemi Corporation	TRANS NPN 15V 200MA Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE160	NTE Electronics, Inc	RF TRANS PNP 20V 700MHZ TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 5dB @ 800MHz Gain: 14dB Power - Max: 60mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V Current - Collector (Ic) (Max): 10mA Operating Temperature: 90°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	20V	700MHz	5dB @ 800MHz	14dB	60mW	50 @ 2mA, 10V	10mA	90°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
NTE229	NTE Electronics, Inc	RF TRANS NPN 30V 500MHZ TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 6dB @ 45MHz Gain: 28dB Power - Max: 425mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	30V	500MHz	6dB @ 45MHz	28dB	425mW	30 @ 5mA, 10V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

NE85634-T1-RF-A

CEL

SAME AS 2SC3357 SAME AS 2SC3357

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고7,488

12V

6.5GHz

1.1dB @ 1GHz

9dB

1.2W

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NE462M02-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: 10dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: -

패키지: TO-243AA

재고2,368

12V

6GHz

3.5dB @ 1GHz

10dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

-

NSVF2250WT1

ON Semiconductor

TRANSISTOR NPN BIPO UHF SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고2,544

15V

-

50mA

-

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

BLS2731-110,114

Ampleon USA Inc.

TRANSISTOR RF POWER SOT423A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-423A
Supplier Device Package: CDFM2

패키지: SOT-423A

재고5,776

75V

3.1GHz

-

7dB

500W

40 @ 3A, 5V

12A

200°C (TJ)

Surface Mount

SOT-423A

CDFM2

UPA810T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,584

12V

4.5GHz

1.2dB @ 1GHz

9dB

200mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SD1433

STMicroelectronics

TRANSISTOR NPN RF UHF 4LEAD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 58W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M122
Supplier Device Package: M122

패키지: M122

재고4,496

16V

-

7dB

58W

10 @ 1A, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

M122

SD1275-01

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고6,704

16V

-

9dB

70W

20 @ 250mA, 5V

8A

-

Surface Mount

M113

BF494_D27Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,792

20V

-

350mW

67 @ 1mA, 10V

30mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-32032-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 13.5dB ~ 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고806,088

5.5V

-

1dB ~ 1.3dB @ 900MHz

13.5dB ~ 15dB

200mW

70 @ 5mA, 2.7V

40mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

HFA3096B

Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 12V, 15V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고163,080

12V, 15V

8GHz, 5.5GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V / 20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

TCS800

Microsemi Corporation

TRANS RF BIPO 1944W 50A 55SM1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 1944W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SM
Supplier Device Package: 55SM

패키지: 55SM

재고2,544

65V

1.03GHz

-

8dB ~ 9dB

1944W

20 @ 5A, 5V

50A

230°C (TJ)

Chassis Mount

55SM

UMIL80

Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 200MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

패키지: 55HV

재고6,672

31V

200MHz ~ 500MHz

-

9dB ~ 9.5dB

220W

10 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55HV

1075MP

Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 8.5dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

패키지: 55FW-1

재고5,904

65V

1.025GHz ~ 1.15GHz

-

7.6dB ~ 8.5dB

250W

20 @ 100mA, 5V

6.5A

200°C (TJ)

Chassis Mount

55FW-1

NE68119-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 10dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고756,000

10V

7GHz

1.4dB @ 1GHz

10dB

100mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-523

MCH4013-TL-E

ON Semiconductor

TRANS NPN 15MA 3.5V MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 22.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 16dB
Power - Max: 50mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-MCPH

패키지: SC-82A, SOT-343

재고3,936

3.5V

22.5GHz

1.5dB @ 2GHz

16dB

50mW

70 @ 5mA, 1V

15mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

4-MCPH

BFU520XVL

NXP

TRANS RF NPN 12V 30MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 18dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고3,456

12V

10.5GHz

1.1dB @ 1.8GHz

18dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

2SC5086-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고5,008

12V

7GHz

1dB @ 500MHz

-

100mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

BFP540ESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 80MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고90,954

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

21.5dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR 182 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 12dB ~ 18dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고55,626

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

12dB ~ 18dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFT25A,215

NXP

TRANS NPN 5V 5GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 32mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Current - Collector (Ic) (Max): 6.5mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고84,888

5V

5GHz

1.8dB ~ 2dB @ 1GHz

-

32mW

50 @ 500µA, 1V

6.5mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

2SC4260TI-03TR-E

Renesas Electronics Corporation

FREQUENCY AMPLIFIER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RF3356-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 12.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

12V

7GHz

1.1dB @ 1GHz

12.5dB

150mW

130 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N3866A-PBFREE

Central Semiconductor Corp

RF TRANS NPN 30V 400MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

800MHz

-

10dB

5W

25 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

64042

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SA1483-Y-TE12L-F

Toshiba Semiconductor and Storage

2SA1483-Y(TE12L,F)

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 200MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

패키지: -

Request a Quote

45V

200MHz

-

120 @ 10mA, 1V

200mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

MRF5812MR2

Microsemi Corporation

TRANS NPN 15V 200MA

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE160

NTE Electronics, Inc

RF TRANS PNP 20V 700MHZ TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 5dB @ 800MHz
Gain: 14dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 90°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

20V

700MHz

5dB @ 800MHz

14dB

60mW

50 @ 2mA, 10V

10mA

90°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

NTE229

NTE Electronics, Inc

RF TRANS NPN 30V 500MHZ TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 6dB @ 45MHz
Gain: 28dB
Power - Max: 425mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

30V

500MHz

6dB @ 45MHz

28dB

425mW

30 @ 5mA, 10V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92