페이지 9 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF4427	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,760	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AT-64000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: -	패키지: Die	재고3,344	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	Die	-
BF199_D74Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,504	25V	1.1GHz	-	-	350mW	38 @ 7mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBTH10-4LT1	ON Semiconductor	TRANS VHF/UHF NPN 25V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,128	25V	800MHz	-	-	225mW	120 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NE85630-R24-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고5,360	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE851M33-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고4,560	5.5V	4.5GHz	1.9dB ~ 2.5dB @ 2GHz	-	130mW	100 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE687M13-A	CEL	TRANSISTOR NPN 2GHZ M13 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-3 Supplier Device Package: M13	패키지: SOT-3	재고2,080	3V	14GHz	1.4dB ~ 2dB @ 2GHz	-	90mW	70 @ 20mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-3	M13
NE68833-A	CEL	TRANS NPN 2GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,344	6V	4.5GHz	1.7dB ~ 2.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
AT-41532-TR1G	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고168,684	12V	-	1dB ~ 1.9dB @ 900MHz ~ 2.4GHz	9dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
UPA814T-T1	CEL	TRANS NPN HF FT=9GHZ SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	패키지: 6-TSSOP, SC-88, SOT-363	재고6,000	6V	9GHz	1.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
BFG325/XR,215	NXP	TRANS NPN 6V 35MA 14GHZ SOT143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 18.3dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고3,472	6V	14GHz	1.1dB @ 2GHz	18.3dB	210mW	60 @ 15mA, 3V	35mA	175°C (TJ)	Surface Mount	SOT-143R	SOT-143R
S200-50	Microsemi Corporation	TRANS RF BIPO 110V 30A 55HX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 110V Frequency - Transition: 1.5MHz ~ 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB ~ 14.5dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HX Supplier Device Package: 55HX	패키지: 55HX	재고3,280	110V	1.5MHz ~ 30MHz	-	12dB ~ 14.5dB	320W	10 @ 1A, 5V	30A	150°C (TJ)	Chassis Mount	55HX	55HX
2A5	Microsemi Corporation	TRANS BIPO 55ET-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.4GHz ~ 3.7GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 3mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55ET Supplier Device Package: 55ET	패키지: 55ET	재고2,496	22V	3.4GHz ~ 3.7GHz	-	7dB ~ 9dB	5.3W	20 @ 100mA, 5V	3mA	200°C (TJ)	Stud Mount	55ET	55ET
JANTXV2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고2,352	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
1015MP	Microsemi Corporation	TRANS RF BIPO 50W 1A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 11dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW Supplier Device Package: 55FW	패키지: 55FW	재고4,832	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 11dB	50W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	55FW	55FW
MS1336	Microsemi Corporation	TRANS RF BIPO 70W 8A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고6,688	18V	175MHz	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MS1649	Microsemi Corporation	TRANS RF BIPO 7.8W 470MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 7.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고3,456	16V	470MHz	-	9.5dB	7.8W	20 @ 100mA, 5V	1A	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFT93W,115	NXP	TRANS PNP 12V 50MA SOT323 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고6,784	12V	4GHz	2.4dB ~ 3dB @ 500MHz ~ 1GHz	-	300mW	20 @ 30mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
NSVF4009SG4T1G	ON Semiconductor	TRANS NPN 3.5V 40MA 4MCPH Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 17dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고3,136	3.5V	25GHz	1.1dB @ 2GHz	17dB	120mW	50 @ 5mA, 1V	40mA	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
CPH6021-TL-H	ON Semiconductor	TRANS PNP BIPO 100MA 12V CPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 14dB @ 1GHz Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH	패키지: SC-74, SOT-457	재고6,128	12V	10GHz	1.2dB @ 1GHz	14dB @ 1GHz	700mW	60 @ 50mA, 5V	100mA	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-CPH
BFU550XRVL	NXP	TRANS RF NPN 12V 50MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고5,216	12V	11GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
BFP405H6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 25MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고6,336	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFR 460L3 E6327	Infineon Technologies	TRANS RF NPN 5.8V 50MA 3TSLP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz Gain: 16dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고2,304	5.8V	22GHz	1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz	16dB	200mW	90 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFU730LXZ	NXP	TRANS RF NPN 3V 30MA XQFN3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 53GHz Noise Figure (dB Typ @ f): 0.75dB @ 6GHz Gain: 15.8dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006 (1.0x0.6)	패키지: 3-XFDFN	재고45,900	3V	53GHz	0.75dB @ 6GHz	15.8dB	160mW	205 @ 2mA, 3V	30mA	-	Surface Mount	3-XFDFN	3-DFN1006 (1.0x0.6)
MMBTH24-7-F	Diodes Incorporated	TRANS NPN 40V 50MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,188,000	40V	400MHz	-	-	300mW	30 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
HFA3128B96	Harris Corporation	ULTRA HIGH FREQUENCY TRANSISTOR Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	8V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
12A01M-TL-E	Sanyo	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP302-MPSH10-CT	Central Semiconductor Corp	RF TRANS NPNUHF/VHF Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die

MRF4427

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,760

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AT-64000-GP4

Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: -

패키지: Die

재고3,344

20V

-

3W

20 @ 110mA, 8V

200mA

200°C (TJ)

Surface Mount

Die

-

BF199_D74Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,504

25V

1.1GHz

-

350mW

38 @ 7mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBTH10-4LT1

ON Semiconductor

TRANS VHF/UHF NPN 25V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,128

25V

800MHz

-

225mW

120 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NE85630-R24-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고5,360

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE851M33-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고4,560

5.5V

4.5GHz

1.9dB ~ 2.5dB @ 2GHz

-

130mW

100 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE687M13-A

CEL

TRANSISTOR NPN 2GHZ M13

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13

패키지: SOT-3

재고2,080

3V

14GHz

1.4dB ~ 2dB @ 2GHz

-

90mW

70 @ 20mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-3

M13

NE68833-A

CEL

TRANS NPN 2GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,344

6V

4.5GHz

1.7dB ~ 2.5dB @ 2GHz

-

200mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

AT-41532-TR1G

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고168,684

12V

-

1dB ~ 1.9dB @ 900MHz ~ 2.4GHz

9dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

UPA814T-T1

CEL

TRANS NPN HF FT=9GHZ SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

패키지: 6-TSSOP, SC-88, SOT-363

재고6,000

6V

9GHz

1.5dB @ 2GHz

-

200mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

BFG325/XR,215

NXP

TRANS NPN 6V 35MA 14GHZ SOT143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 18.3dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고3,472

6V

14GHz

1.1dB @ 2GHz

18.3dB

210mW

60 @ 15mA, 3V

35mA

175°C (TJ)

Surface Mount

SOT-143R

S200-50

Microsemi Corporation

TRANS RF BIPO 110V 30A 55HX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 110V
Frequency - Transition: 1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB ~ 14.5dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HX
Supplier Device Package: 55HX

패키지: 55HX

재고3,280

110V

1.5MHz ~ 30MHz

-

12dB ~ 14.5dB

320W

10 @ 1A, 5V

30A

150°C (TJ)

Chassis Mount

55HX

2A5

Microsemi Corporation

TRANS BIPO 55ET-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.4GHz ~ 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 3mA
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55ET
Supplier Device Package: 55ET

패키지: 55ET

재고2,496

22V

3.4GHz ~ 3.7GHz

-

7dB ~ 9dB

5.3W

20 @ 100mA, 5V

3mA

200°C (TJ)

Stud Mount

55ET

JANTXV2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고2,352

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

1015MP

Microsemi Corporation

TRANS RF BIPO 50W 1A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 11dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW
Supplier Device Package: 55FW

패키지: 55FW

재고4,832

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 11dB

50W

20 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

55FW

MS1336

Microsemi Corporation

TRANS RF BIPO 70W 8A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

패키지: M135

재고6,688

18V

175MHz

-

10dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Chassis, Stud Mount

M135

MS1649

Microsemi Corporation

TRANS RF BIPO 7.8W 470MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 7.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고3,456

16V

470MHz

-

9.5dB

7.8W

20 @ 100mA, 5V

1A

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFT93W,115

NXP

TRANS PNP 12V 50MA SOT323

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고6,784

12V

4GHz

2.4dB ~ 3dB @ 500MHz ~ 1GHz

-

300mW

20 @ 30mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

NSVF4009SG4T1G

ON Semiconductor

TRANS NPN 3.5V 40MA 4MCPH

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 17dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고3,136

3.5V

25GHz

1.1dB @ 2GHz

17dB

120mW

50 @ 5mA, 1V

40mA

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

CPH6021-TL-H

ON Semiconductor

TRANS PNP BIPO 100MA 12V CPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 14dB @ 1GHz
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH

패키지: SC-74, SOT-457

재고6,128

12V

10GHz

1.2dB @ 1GHz

14dB @ 1GHz

700mW

60 @ 50mA, 5V

100mA

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-CPH

BFU550XRVL

NXP

TRANS RF NPN 12V 50MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고5,216

12V

11GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

BFP405H6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 25MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고6,336

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFR 460L3 E6327

Infineon Technologies

TRANS RF NPN 5.8V 50MA 3TSLP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
Gain: 16dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고2,304

5.8V

22GHz

1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz

16dB

200mW

90 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFU730LXZ

NXP

TRANS RF NPN 3V 30MA XQFN3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 53GHz
Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
Gain: 15.8dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006 (1.0x0.6)

패키지: 3-XFDFN

재고45,900

3V

53GHz

0.75dB @ 6GHz

15.8dB

160mW

205 @ 2mA, 3V

30mA

-

Surface Mount

3-XFDFN

3-DFN1006 (1.0x0.6)

MMBTH24-7-F

Diodes Incorporated

TRANS NPN 40V 50MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,188,000

40V

400MHz

-

300mW

30 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

HFA3128B96

Harris Corporation

ULTRA HIGH FREQUENCY TRANSISTOR

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

8V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

12A01M-TL-E

Sanyo

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CP302-MPSH10-CT

Central Semiconductor Corp

RF TRANS NPNUHF/VHF

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die