페이지 19 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 182W E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고6,048	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	19dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BFP183WE6327BTSA1	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고5,280	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	22dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
2N5031	Microsemi Corporation	TRANS RF NPN 200MW 20MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: 12dB @ 400MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고15,096	10V	400MHz	-	12dB @ 400MHz	200mW	25 @ 1mA, 6V	20mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
NE85634-T1-RE-A	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고5,968	12V	6.5GHz	1.1dB @ 1GHz	9dB	1.2W	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
LZ1418E100R,114	Ampleon USA Inc.	TRANSISTOR NPN POWER SOT443A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 45W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 3V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Flange Package / Case: SOT-443A Supplier Device Package: CDFM2	패키지: SOT-443A	재고2,480	20V	1.6GHz	-	-	45W	15 @ 2A, 3V	4A	200°C (TJ)	Flange	SOT-443A	CDFM2
AT-42070	Broadcom Limited	TRANS NPN BIPO 12V 80MA 70-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10.5dB ~ 14dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (70 mil) Supplier Device Package: 70 mil Package	패키지: 4-SMD (70 mil)	재고2,224	12V	8GHz	1.9dB ~ 3dB @ 2GHz ~ 4GHz	10.5dB ~ 14dB	600mW	30 @ 35mA, 8V	80mA	200°C (TJ)	Surface Mount	4-SMD (70 mil)	70 mil Package
NE662M04-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 18dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고3,568	3.3V	25GHz	1.1dB @ 2GHz	18dB	115mW	50 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
NE85639R-T1	CEL	TRANS NPN 1GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고2,560	12V	9GHz	1.5dB ~ 2.1dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
FMMT918TA	Diodes Incorporated	TRANS RF NPN 15V 100MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,208	15V	600MHz	6dB @ 60MHz	15dB	330mW	20 @ 3mA, 1V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BFS17W,115	NXP	TRANS NPN 15V 1GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고4,176	15V	1.6GHz	4.5dB @ 500MHz	-	300mW	25 @ 2mA, 1V	50mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFP450H6433XTMA1	Infineon Technologies	TRANS RF NPN 4.5V 100MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고2,240	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
0912-45	Microsemi Corporation	TRANS RF BIPO 225W 4.5A 55CT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	패키지: 55CT	재고3,488	60V	960MHz ~ 1.215GHz	-	8dB ~ 9dB	225W	10 @ 300mA, 5V	4.5A	200°C (TJ)	Chassis Mount	55CT	55CT
JANTX2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고3,216	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
BFG520,215	NXP	TRANS RF NPN 9GHZ 15V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고6,320	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFP780H6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN AMP SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.1V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz Gain: 27dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT343-4-2	패키지: SC-82A, SOT-343	재고5,440	6.1V	900MHz	1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz	27dB	600mW	85 @ 90mA, 5V	120mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT343-4-2
2SC5226A-4-TL-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	패키지: SC-70, SOT-323	재고38,400	10V	7GHz	1dB @ 1GHz	12dB	150mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
BLT81,115	NXP	TRANS NPN 9.5V 500MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9.5V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고123,852	9.5V	900MHz	-	8dB	2W	25 @ 300mA, 5V	500mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFU550WX	NXP	TRANS RF NPN 12V 50MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.6dB @ 900MHz Gain: 18dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고88,680	12V	11GHz	0.6dB @ 900MHz	18dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFR380TE6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: -	Request a Quote	9V	14GHz	1.1dB @ 1.8GHz	12.5dB	380mW	60 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
LYE16350XH	Ampleon USA Inc.	LYE16350XH - RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RX1214B280YH	Ampleon USA Inc.	MICROWAVE POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
15C02SS-TL-E	onsemi	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PH1214-110M	MACOM Technology Solutions	TRANSISTOR,110W,1.20-1.40GHZ,40V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 10.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	70V	-	-	7.4dB	350W	-	10.5A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
PH1214-80M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,80W,1.20-1.40 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.9dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 6.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	70V	1.4GHz	-	7.9dB	220W	-	6.4A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MRF8372MR1	Microsemi Corporation	TRANS NPN 16V 200MA Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
3MN03SF-TL-E	onsemi	BIP NPN 30MA 20V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 320MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: 3-SSFP	패키지: -	Request a Quote	20V	320MHz	3dB @ 100MHz	-	150mW	60 @ 1mA, 6V	30mA	-	Surface Mount	3-SMD, Flat Lead	3-SSFP
NTE161	NTE Electronics, Inc	RF TRANS NPN 45V 600MHZ TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	45V	600MHz	6dB @ 60MHz	15dB	200mW	20 @ 3mA, 1V	50mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MSC2295-BT1	onsemi	TRANS NPN RF BIPO 20V SC-59 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: -	Request a Quote	20V	150MHz	-	-	200mW	70 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59

BFR 182W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고6,048

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

19dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BFP183WE6327BTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고5,280

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

22dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

2N5031

Microsemi Corporation

TRANS RF NPN 200MW 20MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB @ 400MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고15,096

10V

400MHz

-

12dB @ 400MHz

200mW

25 @ 1mA, 6V

20mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

NE85634-T1-RE-A

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고5,968

12V

6.5GHz

1.1dB @ 1GHz

9dB

1.2W

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

LZ1418E100R,114

Ampleon USA Inc.

TRANSISTOR NPN POWER SOT443A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 45W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 3V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Flange
Package / Case: SOT-443A
Supplier Device Package: CDFM2

패키지: SOT-443A

재고2,480

20V

1.6GHz

-

45W

15 @ 2A, 3V

4A

200°C (TJ)

Flange

SOT-443A

CDFM2

AT-42070

Broadcom Limited

TRANS NPN BIPO 12V 80MA 70-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10.5dB ~ 14dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (70 mil)
Supplier Device Package: 70 mil Package

패키지: 4-SMD (70 mil)

재고2,224

12V

8GHz

1.9dB ~ 3dB @ 2GHz ~ 4GHz

10.5dB ~ 14dB

600mW

30 @ 35mA, 8V

80mA

200°C (TJ)

Surface Mount

4-SMD (70 mil)

70 mil Package

NE662M04-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 18dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고3,568

3.3V

25GHz

1.1dB @ 2GHz

18dB

115mW

50 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

NE85639R-T1

CEL

TRANS NPN 1GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고2,560

12V

9GHz

1.5dB ~ 2.1dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SOT-143R

FMMT918TA

Diodes Incorporated

TRANS RF NPN 15V 100MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,208

15V

600MHz

6dB @ 60MHz

15dB

330mW

20 @ 3mA, 1V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BFS17W,115

NXP

TRANS NPN 15V 1GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고4,176

15V

1.6GHz

4.5dB @ 500MHz

-

300mW

25 @ 2mA, 1V

50mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFP450H6433XTMA1

Infineon Technologies

TRANS RF NPN 4.5V 100MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고2,240

5V

24GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 50mA, 4V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

0912-45

Microsemi Corporation

TRANS RF BIPO 225W 4.5A 55CT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT

패키지: 55CT

재고3,488

60V

960MHz ~ 1.215GHz

-

8dB ~ 9dB

225W

10 @ 300mA, 5V

4.5A

200°C (TJ)

Chassis Mount

55CT

JANTX2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고3,216

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

BFG520,215

NXP

TRANS RF NPN 9GHZ 15V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고6,320

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFP780H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.1V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Gain: 27dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT343-4-2

패키지: SC-82A, SOT-343

재고5,440

6.1V

900MHz

1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz

27dB

600mW

85 @ 90mA, 5V

120mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT343-4-2

2SC5226A-4-TL-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

패키지: SC-70, SOT-323

재고38,400

10V

7GHz

1dB @ 1GHz

12dB

150mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

BLT81,115

NXP

TRANS NPN 9.5V 500MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고123,852

9.5V

900MHz

-

8dB

2W

25 @ 300mA, 5V

500mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFU550WX

NXP

TRANS RF NPN 12V 50MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고88,680

12V

11GHz

0.6dB @ 900MHz

18dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFR380TE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: -

Request a Quote

9V

14GHz

1.1dB @ 1.8GHz

12.5dB

380mW

60 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

LYE16350XH

Ampleon USA Inc.

LYE16350XH - RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RX1214B280YH

Ampleon USA Inc.

MICROWAVE POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

15C02SS-TL-E

onsemi

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PH1214-110M

MACOM Technology Solutions

TRANSISTOR,110W,1.20-1.40GHZ,40V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 10.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

70V

-

7.4dB

350W

-

10.5A

200°C (TJ)

Chassis Mount

2L-FLG

PH1214-80M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,80W,1.20-1.40

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.9dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 6.4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

70V

1.4GHz

-

7.9dB

220W

-

6.4A

200°C (TJ)

Chassis Mount

2L-FLG

MRF8372MR1

Microsemi Corporation

TRANS NPN 16V 200MA

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

3MN03SF-TL-E

onsemi

BIP NPN 30MA 20V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-SSFP

패키지: -

Request a Quote

20V

320MHz

3dB @ 100MHz

-

150mW

60 @ 1mA, 6V

30mA

-

Surface Mount

3-SMD, Flat Lead

3-SSFP

NTE161

NTE Electronics, Inc

RF TRANS NPN 45V 600MHZ TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

45V

600MHz

6dB @ 60MHz

15dB

200mW

20 @ 3mA, 1V

50mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MSC2295-BT1

onsemi

TRANS NPN RF BIPO 20V SC-59

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: -

Request a Quote

20V

150MHz

-

200mW

70 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59